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André Vantomme. Published 358 articles in journals. Has 1 section(s) of books and 1 book(s).
Identificação

Identificação pessoal

Nome completo
André Vantomme

Nomes de citação

  • Vantomme, André

Identificadores de autor

Ciência ID
3515-DF27-6DC8
ORCID iD
0000-0001-9158-6534

Telefones

Telefone
  • (+32) 16 Ext.: 327514 (Profissional)

Moradas

  • Celestijnenlaan 200 D, B-3001, Leuven, Vlaams-Brabant, Bélgica (Profissional)

Websites

Formação
Grau Classificação
1986/01/09 - 1991/03/13
Concluído
 PhD in Physics (Postgraduate Certificate)
Katholieke Universiteit Leuven, Bélgica
""Formation and characterization of thin Co-silicide layers" (in Dutch)" (TESE/DISSERTAÇÃO)
1982/10/01 - 1986/07/04
Concluído
 Licentiaat Fyisca (Licence)
Especialização em Physics
Katholieke Universiteit Leuven, Bélgica
""Mössbauer study of epitaxial Co-silicides" (in Dutch)" (TESE/DISSERTAÇÃO)
Percurso profissional

Ciência

Categoria Profissional
Instituição de acolhimento 		Empregador
2000/10/01 - Atual Investigador principal (carreira) (Investigação) Katholieke Universiteit Leuven, Bélgica
1997/10/01 - 2000/09/30 Investigador principal (carreira) (Investigação) Katholieke Universiteit Leuven, Bélgica
1993/11/01 - 1997/09/30 Pós-doutorado (Investigação) Katholieke Universiteit Leuven, Bélgica
1991/01/10 - 1993/10/31 Pós-doutorado (Investigação) California Institute of Technology, Estados Unidos
1986/09/30 - 1991/09 Assistente de Investigação (carreira) (Investigação) Katholieke Universiteit Leuven, Bélgica
Produções

Publicações

Artigo em conferência
  1. Isao Harayama; Daichiro Sekiba; Qiang Zhao; André Vantomme; wilfried vandervorst; Johan Meersschaut. "Calibration of PIXE yields using Cu as a reference". 2017.
    10.1016/j.nimb.2017.02.053
  2. U Wahl; J G Correia; A Costa; E David-Bosne; Lino Pereira; lmarina Pinto de Almeida Amorim; Valérie Augustyns; et al. "Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE Facility". 2015.
  3. Tatsuro Maeda; Wipakorn Jevasuwan; Hiroyuki Hattori; Noriyuki Uchida; Shu Miura; Masatoshi Tanaka; Nuno N.M. Santos; et al. "Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy". 2015.
    10.7567/JJAP.54.04DA07
  4. F A Geenen; K Van Stiphout; J Jordan-Sweet; André Vantomme; C Lavoie; C Detavernier. "Influence of alloying elements on the phase formation of ultrathin Ni (< 10nm) on Si(001) substrates". 2015.
    10.1109/IITC-MAM.2015.7325615
  5. J Meersschaut; J Carbonel; M Popovici; Qiang Zhao; André Vantomme; wilfried vandervorst. "Calibration of PIXE yields using binary thin films on Si". 2014.
    10.1016/j.nimb.2014.03.023
  6. Hara Lenka; Johan Meersschaut; Prem Kumar Kandaswamy; Hiwa Modarresi; Hugo Bender; André Vantomme; wilfried vandervorst. "Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study". 2014.
    10.1016/j.nimb.2014.02.014
  7. Sérgio S.M.C. Miranda; P R Edwards; K P O'Donnell; M Bockowski; E Alves; I S Roqan; André Vantomme; K Lorenz. "Sequential multiple-step europium ion implantation and annealing of GaN". 2014.
    10.1002/pssc.201300210
  8. Yosuke Shimura; Wei Wang; wilfried vandervorst; Federica Gencarelli; Alban Gassenq; Gunther Roelkens; André Vantomme; Matty Caymax; Roger Loo. "Ge1-xSnx optical devices: growth and applications". 2014.
    10.1149/06406.0677ecst
  9. Ruben Lieten; Tatsuro Maeda; Jin Won Seo; Wipakorn Jevasuwan; Hiroyuki Hattori; Noriyuki Uchida; Shu Miura; et al. "Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices". 2014.
    10.1149/06411.0149ecst
  10. J Meersschaut; M Kayhko; H P Lenka; T Witters; Qiang Zhao; André Vantomme; wilfried vandervorst. "RBS And PIXE Analysis Of Chlorine Contamination In ALD-Grown Tin Films On Silicon". 2013.
    10.1063/1.4802317
  11. Ruben Lieten; Stefan Decoster; Mariela Menghini; Jin Won Seo; André Vantomme; Jean-Pierre Locquet. "Single Crystalline GeSn On Silicon By Solid Phase Crystallization". 2012.
    10.1149/05009.0915ecst
  12. Claudia Fleischmann; Koen Schouteden; michel houssa; Sonja Sioncke; C Merckling; M Meuris; P Hönicke; et al. "Oxidation and sulfidation of germanium surfaces: A comparative atomic level study of different passivation schemes". 2012.
    10.1149/05009.0569ecst
  13. Sonja Sioncke; Claudia Fleischmann; Dennis Lin; Evi Vrancken; Matty Caymax; Marc Meuris; Kristiaan Temst; et al. "S-passivation of the Ge gate stack using (NH4)(2)S". 2012.
    10.4028/www.scientific.net/SSP.187.23
  14. Benjamin Vincent; Federica Gencarelli; Arul Kumar; André Vantomme; Clement Merckling; Dennis Lin; Valery Afanas'ev; et al. "CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices". 2012.
    10.1109/ISTDM.2012.6222486
  15. Federica Gencarelli; Benjamin Vincent; Jelle Demeulemeester; André Vantomme; Alain Moussa; Alexis Franquet; Arul Kumar; et al. "Crystalline properties and strain relaxation mechanism of CVD grown GeSn". 2012.
    10.1149/05009.0875ecst
  16. F D Auret; W E Meyer; M Diale; P J J van Rensburg; SF Song; Kristiaan Temst; André Vantomme. "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation". 2011.
    10.4028/www.scientific.net/MSF.679-680.804
  17. S Zaima; O Nakatsuka; Y Shimura; M Adachi; M Nakamura; S Takeuchi; Benjamin Vincent; et al. "GeSn Technology: Impact of Sn on Ge CMOS Applications". 2011.
    10.1149/1.3633303
  18. S Sioncke; D Lin; C Adelmann; G Brammertz; Annelies Delabie; T Conard; A Franquet; et al. "ALD on high mobility channels: engineering the proper gate stack passivation". 2010.
    10.1149/1.3485237
  19. S Takeuchi; Y Shimura; T Nishimura; B Vincent; G Eneman; T Clarysse; J Demeulemeester; et al. "Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices". 2010.
    10.1149/1.3487583
  20. Dennis Lin; Niamh Waldron; Guy Brammertz; Koen Martens; Wei-E Wang; Sonja Sioncke; Annelies Delabie; et al. "Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS". 2010.
    10.1149/1.3367949
  21. Dennis Lin; Guy Brammertz; Sonja Sioncke; Claudia Fleischmann; Annelies Delabie; Koen Martens; Hugo Bender; et al. "Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution". 2009.
    10.1109/IEDM.2009.5424359
  22. Claudia Fleischmann; Sonja Sioncke; K Schouteden; K Paredis; B Beckhoff; M Mvºller; M Kolbe; et al. "Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100)". 2009.
    10.1149/1.3204433
  23. michel houssa; G Pourtois; B Kaczer; B De Jaeger; F E Leys; D Nelis; K Paredis; et al. "Experimental and theoretical study of Ge surface passivation". 2007.
    10.1016/j.mee.2007.04.114
  24. S Giangrandi; B Brijs; T Sajavaara; K Arstila; André Vantomme; wilfried vandervorst. "Time-of-flight telescope for heavy-ion RBS". 2007.
    10.1016/j.nimb.2007.03.094
  25. S Giangrandi; K Arstila; B Brijs; T Sajavaara; André Vantomme; wilfried vandervorst. "Depth resolution optimization for low-energy ERDA". 2007.
    10.1016/j.nimb.2007.03.093
  26. F D Auret; P J Janse van Rensburg; A Hayes; J M Nel; S Coelho; W E Meyer; Stefan Decoster; et al. "Electrical characterization of defects in heavy-ion implanted n-type Ge". 2007.
    10.1016/j.nimb.2007.01.107
  27. Simone Giangrandi; B Brijs; T Sajavaara; H Bender; F Iacopi; André Vantomme; wilfried vandervorst. "Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis". 2006.
    10.1016/j.nimb.2006.03.111
  28. T Sajavaara; B Brijs; Simone Giangrandi; Kai Arstila; André Vantomme; wilfried vandervorst. "Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry". 2006.
    10.1016/j.nimb.2006.04.049
  29. B Brijs; T Sajavaara; Simone Giangrandi; T Janssens; T Conard; Kai Arstila; K Nakajima; et al. "The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering, and secondary ion mass spectrometry". 2006.
    10.1016/j.nimb.2006.03.191
  30. R W Martin; D Rading; R Kersting; E Tallarek; E Nogales; D Amabile; K Wang; et al. "Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence". 2006.
    10.1002/pssc.200565411
  31. M A Pawlak; J A Kittl; T Janssens; A Lauwers; wilfried vandervorst; K G Anil; T Schram; et al. "Influence of activation annealing and silicidation process on as redistribution and pile-up at the Ni xSi y/SiO 2 interface". 2005.
  32. B Brijs; Timo Pekka Sajavaara; Simone Giangrandi; K Arstila; André Vantomme; wilfried vandervorst. "Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection". 2005.
    10.1016/j.mee.2005.04.051
  33. A Colder; T Wojtowicz; P Marie; P Ruterana; V Matias; M Mamor; André Vantomme; et al. "Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN". 2005.
    10.1002/pssc.200461504
  34. M A Pawlak; J A Kittl; O Chamirian; A Veloso; A Lauwers; T Schram; K Maex; André Vantomme. "Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies". 2004.
    10.1016/j.mee.2004.07.037
  35. M Wojdak; A Braud; J L Doualan; R Moncorge; B Pipeleers; André Vantomme; O Briot. "Mutual quenching of Er3+ photolurninescence under two laser excitation in GaN : Er". 2004.
    10.1016/j.spmi.2004.09.032
  36. U. Wahl; J G Correia; E Rita; E Alves; J C Soares; B De Vries; V Matias; André Vantomme. "Recent emission channeling studies in wide band gap semiconductors". 2004.
    10.1007/s10751-005-9125-0
  37. Koen Vanormelingen; B Degroote; André Vantomme. "The influence of the deposition energy on thin film formation: Co on Si(111)". 2004.
  38. A Braud; J L Doualan; R Moncorge; B Pipeleers; André Vantomme. "Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN". 2003.
    10.1016/j.mseb.2003.08.024
  39. T Wojtowicz; V Matias; P Marie; M Mamor; B Pipeleers; P Ruterana; André Vantomme. "Microstructural and electrical characterization of Er and Eu implanted gallium nitride". 2003.
    10.1016/j.mseb.2003.08.029
  40. B De Vries; U. Wahl; André Vantomme; J G Correia. "Emission channeling experiments from the decay of Gd-149 to Eu-149 in GaN". 2003.
    10.1016/j.mseb.2003.08.025
  41. J Nord; K Nordlund; B Pipeleers; André Vantomme. "Implantation angle dependence of ion irradiation damage in GaN". 2003.
    10.1016/j.mseb.2003.08.026
  42. U. Wahl; E Alves; K Lorenz; J G Correia; T Monteiro; B De Vries; André Vantomme; R Vianden. "Lattice location and optical activation of rare earth implanted GaN". 2003.
    10.1016/j.mseb.2003.08.031
  43. M Mamor; B Pipeleers; F D Auret; J Maes; M Hayne; V V Moshchalkov; André Vantomme. "Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation". 2003.
    10.1016/j.mseb.2003.08.041
  44. M A Pawlak; T Schram; K Maex; André Vantomme. "Investigation of iridium as a gate electrode for deep sub-micron CMOS technology". 2003.
    10.1016/S0167-9317(03)00382-4
  45. R Labbani; R Halimi; T Laoui; André Vantomme; B Pipeleers; G Roebben. "Characterization of Si(1 1 1) crystals implanted with Sb+ ions and annealed by rapid thermal processing". 2003.
    10.1016/S0921-5107(02)00630-X
  46. Bert Pipeleers; S M Hogg; André Vantomme. "Influence of the implantation angle on the generation of defects for Er implanted GaN". 2003.
    10.1016/S0168-583X(03)00689-X
  47. E Alves; U. Wahl; M R Correia; S Pereira; Bart De Vries; André Vantomme. "Annealing behavior and lattice site location of Er implanted InGaN". 2003.
    10.1016/S0168-583X(03)00930-3
  48. A Braud; M Abouzaid; M Wojdak; J L Doualan; R Moncorge; B Pipeleers; André Vantomme; et al. "Above and below bandgap excitation of Er-defect complexes and isolated Er in Er-implanted GaN". 2003.
  49. S Dalmasso; RW Martin; PR Edwards; V Katchkanov; KP O'Donnell; K Lorenz; E Alves; et al. "Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - implanted GaN". 2003.
  50. K Lorenz; U. Wahl; E Alves; T Wojtowicz; P Ruterana; S Dalmasso; RW Martin; et al. "Processing of rare earth doped GaN with ion beams". 2003.
  51. S Dalmasso; R W Martin; P R Edwards; K P O'Donnell; Bert Pipeleers; André Vantomme; Y Nakanishi; et al. "Electron probe microanalysis of rare earth doped gallium nitride light emitters". 2003.
  52. B De Vries; U. Wahl; André Vantomme; J G Correia. "Lattice location of implanted 147Nd and 147* Pm in GaN using emission channeling". 2002.
    10.1002/pssc.200390086
  53. O Chamirian; A Lauwers; C Demeurisse; H Guerault; André Vantomme; K Maex. "CoSi2 formation from CoxNi1-x/Ti system". 2002.
    10.1016/S0167-9317(02)00782-7
  54. U. Wahl; J G Correia; André Vantomme; ISOLDE Collaboration. "Lattice location of implanted Ag in Si". 2002.
    10.1016/S0168-583X(01)01191-0
  55. B Brijs; Cedric Huyghebaert; S Nauwelaerts; M Caymax; wilfried vandervorst; K Nakajima; K Kimura; et al. "Advanced characterization of high-k materials: A nuclear approach". 2002.
    10.1016/S0168-583X(02)00468-8
  56. André Vantomme; Bart Degroote; S Degroote; Koen Vanormelingen; Johannes Meersschaut; Bart Croonenborghs; Stella Maris Van Eek; et al. "Hyperfine interaction studies with monolayer depth resolution using ultra-low energy radioactive ion beams". 2002.
    10.1016/S0168-583X(01)01208-3
  57. André Vantomme; E Alves; J G Correia; I Bryntse; L G Johansson; S M Loureiro; S Lefloch; et al. "Surface quality studies of high-T-c superconductors of the Hg-, Tl- and HgxTl1-x-families: RBS and resonant C and O backscattering studies". 2002.
    10.1016/S0168-583X(01)01298-8
  58. A Falepin; C M Comrie; S Cottenier; André Vantomme. "Study of concentration variations in the metastable [CsCl]Fe1-xSi phase". 2002.
    10.1016/S0921-5107(01)00837-6
  59. D L Nagy; Laszlo Bottyan; Laszlo Deak; Bart Degroote; O Leupold; M Major; Johannes Meersschaut; et al. "Specular and off-specular Synchrotron Mossbauer Reflectometry: Applications to thin film magnetism". 2002.
    10.1002/1521-396X(200202)189:2<591::AID-PSSA591>3.0.CO;2-8
  60. D L Nagy; L Bottyan; L Deak; B Degroote; J Dekoster; O Leupold; M Major; et al. "Off-specular synchrotron Mossbauer reflectometry: A novel tool for studying the domain structure in antiferromagnetic multilayers". 2002.
    10.1023/A:1021225530886
  61. B De Vries; U. Wahl; André Vantomme; J G Correia. "Lattice location of implanted 147Nd and 147*Pm in GaN using emission channeling". 2002.
  62. Alessandra Satta; Sywert Brongersma; Jörg Schuhmacher; Thierry Conard; Gerald Beyer; Karen Maex; M M Viitanen; et al. "Nucleation and growth of TiN films deposited by atomic layer deposition". 2002.
  63. G E J Koops; Sophie Nauwelaerts; R Venegas; André Vantomme; Hugo Pattyn. "Sn nanoclusters formed in thermally grown SiO2 studied by Mossbauer spectroscopy". 2001.
    10.1016/S0168-583X(01)00499-2
  64. André Vantomme; S M Hogg; M F Wu; Bert Pipeleers; M Swart; S Goodman; D Auret; et al. "Suppression of rare-earth implantation-induced damage in GaN". 2001.
    10.1016/S0168-583X(00)00550-4
  65. U. Wahl; André Vantomme; Guido Langouche; J P Araujo; ISOLDE Collaboration. "Emission channeling studies of implanted Er-167m in InP". 2001.
    10.1016/S0168-583X(00)00531-0
  66. S M Hogg; André Vantomme; M F Wu; Bert Pipeleers; M Swart. "Temperature and angular effects on the channelled implantation of Er into Si < 111 >". 2001.
    10.1016/S0168-583X(00)00647-9
  67. A Falepin; C M Comrie; André Vantomme; Guido Langouche. "Study of phase formations in epsilon-FeSi layers by pulsed laser annealing". 2001.
    10.1023/A:1013893311077
  68. Alessandra Satta; Gerald Beyer; Karen Maex; K Elers; S Haukka; André Vantomme. "Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization". 2001.
  69. Alessandra Satta; Mikhaïl Baklanov; Olivier Richard; André Vantomme; Hugo Bender; Thierry Conard; Karen Maex; et al. "Enhancement of AlCVD TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments". 2001.
    10.1016/S0167-9317(01)00581-0
  70. B Degroote; H Pattyn; S Degroote; André Vantomme; J Dekoster; Guido Langouche. "Diffusion-induced step decoration of Co on Ag(001)". 2000.
    10.1016/S0040-6090(00)01481-4
  71. Eddy Kunnen; Kristiaan Temst; Victor Moshchalkov; Yvan Bruynseraede; S Mangin; André Vantomme; A Hoser. "The magnetic structure of epitaxial Cr films on MgO". 2000.
    10.1016/S0921-4526(99)01796-2
  72. André Vantomme; Guido Langouche; J E Mahan; J P Becker. "Growth mechanism and optical properties of semiconducting Mg2Si thin films". 2000.
    10.1016/S0167-9317(99)00287-7
  73. S M Hogg; André Vantomme; M F Wu; Guido Langouche. "Electrical properties of rare earth silicides produced by channeled ion beam synthesis". 2000.
    10.1016/S0167-9317(99)00284-1
  74. C C Theron; A Falepin; S Degroote; J Dekoster; André Vantomme; Guido Langouche; H S De Waal; et al. "Controlled phase formation by using a diffusion barrier - The Fe-Si reaction". 2000.
  75. K P O'Donnell; R W Martin; M E White; K Esona; C Trager-Cowan; Koen Jacobs; Wim Van der Stricht; et al. "The dependence of the optical energies on InGaN composition". 2000.
    10.1016/S0921-5107(00)00706-6
  76. André Vantomme; M F Wu; Susan Hogg; Guido Langouche; K Jacobs; I Moerman; M E White; et al. "Comparative study of structural properties and photoluminescence in InGaN layers with a high In content". 2000.
  77. CC Theron; Annelies Falepin; S Degroote; J Dekoster; André Vantomme; Guido Langouche; HS de Waal; et al. "Controlled phase formation by using a diffusion barrier". 2000.
  78. Gerrit Koops; T Barancira; W Deweerd; André Vantomme; Hugo Pattyn; MF Wu; GL Zhang; et al. "Microscopic study of ion implanted Sn in Si". 2000.
  79. J Dekoster; Bart Degroote; Hugo Pattyn; Guido Langouche; André Vantomme; S Degroote; EA Gorlich; AT Pedziwiatr. "Step decoration during depostion of Co on Ag(001) by ultra low energy beams". 2000.
  80. C Trager-Cowan; D McColl; F Sweeney; S T F Grimson; J F Treguer; A Mohammed; P G Middleton; et al. "Probing nitride thin films in 3-dimensions using a variable energy electron beam". 2000.
  81. K P O'Donnell; R W Martin; M E White; K Jacobs; W van der Stricht; P Demeester; André Vantomme; M F Wu; J Mosselmans. "Optical spectroscopy and composition of InGaN". 2000.
  82. Bart Degroote; J Dekoster; S Degroote; Hugo Pattyn; André Vantomme; Guido Langouche; M Hou; et al. "Growth of Co on Ag(100): a comparison of ultra low energy ion beam depostion and thermal deposition". 2000.
  83. U. Wahl; J G Correia; J P Araujo; André Vantomme; Guido Langouche; ISOLDE Collaboration. "Er-O clustering and its influence on the lattice sites of Er in Si". 1999.
    10.1016/S0921-4526(99)00472-X
  84. U. Wahl; J G Correia; André Vantomme; Guido Langouche; ISOLDE Collaboration. "Lattice location of implanted Cu in Si". 1999.
    10.1016/S0921-4526(99)00479-2
  85. J Dekoster; Johannes Meersschaut; Susan Hogg; S Mangin; E Nordstrom; André Vantomme; Guido Langouche. "Temperature dependence of the interlayer exchange coupling in MBE-grown Fe/Cr/Fe sandwiches". 1999.
    10.1016/S0304-8853(98)01110-X
  86. U. Wahl; André Vantomme; Guido Langouche. "Lattice sites and damage annealing of Er in low-dose implanted GaAs". 1999.
    10.1016/S0168-583X(98)00673-9
  87. J Dekoster; S Degroote; J Meersschaut; R Moons; André Vantomme; L Bottyan; L Deak; et al. "Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy". 1999.
    10.1023/A:1017065710220
  88. M Mamor; F D Auret; S A Goodman; J Brink; M Hayes; F Meyer; André Vantomme; Guido Langouche; P N K Deenapanray. "Deep level properties of erbium implanted epitaxially grown SiGe". 1999.
    10.1016/S0168-583X(98)00693-4
  89. André Vantomme; Ming Fang Wu; Susan Hogg; Guido Langouche; Koen Jacobs; Ingrid Moerman; M E White; et al. "Comparative study of structural properties and photoluminescence in InGaN layers". 1999.
  90. Ming Fang Wu; S Yao; André Vantomme; Susan Hogg; Guido Langouche; Wim Van der Stricht; Koen Jacobs; et al. "Elastic strain in InGaN and AlGaN layers". 1999.
    10.1016/S0921-5107(00)00371-8
  91. C Trager-Cowan; J F Treguer; S T F Grimson; I Osborne; M Barisonzi; P G Middleton; S K Manson-Smith; et al. "Probing nitride thin films in 3-dimensions using a variable energy electron beam". 1999.
  92. U. Wahl; André Vantomme; Guido Langouche; JG Correia. "The influence of oxygen on the lattice sites of rare earths in silicon". 1999.
    10.1016/S0022-2313(98)00116-1
  93. JG Correia; E Alves; VS Amaral; JP Araujo; P Bordet; T Butz; JJ Capponi; et al. "High-T-c superconductors studies with radioactive ion beams at isolde". 1999.
  94. R A Donaton; S Jin; Hugo Bender; Karen Maex; André Vantomme; Guido Langouche. "Influence of SiGe thickness on the Co/SiGe/Si solid state reaction". 1999.
    10.1557/PROC-564-151
  95. U. Wahl; J G Correia; S Cardoso; J G Marques; André Vantomme; Guido Langouche; ISOLDE Collaboration. "Electron emission channeling with position-sensitive detectors". 1998.
    10.1016/S0168-583X(97)00768-4
  96. André Vantomme; U. Wahl; M F Wu; Susan Hogg; Hugo Pattyn; Guido Langouche; H Bender. "Backscattering/channeling study of high-dose rare-earth implants into Si". 1998.
    10.1016/S0168-583X(97)00719-2
  97. R Moons; Stefan Degroote; J Dekoster; André Vantomme; Guido Langouche. "Structural characterization of metastable FeSi films and of Fe/FeSi multilayers". 1998.
    10.1016/S0168-583X(97)00695-2
  98. R A Donaton; S Jin; H Bender; M Zagrebnov; K Baert; K Maex; André Vantomme; et al. "New approaches for formation of ultra-thin PtSi layers for infrared applications". 1998.
    10.1557/PROC-525-307
  99. André Vantomme; Ming Fang Wu; Susan Hogg; U. Wahl; Wim Deweerd; Hugo Pattyn; Guido Langouche; S Jin; Hugo Bender. "Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)". 1998.
    10.1016/S0168-583X(98)00570-9
  100. R Donaton; S Jin; Hugo Bender; Maxim Zagrebnov; Kris Baert; Karen Maex; André Vantomme; Guido Langouche. "New approaches for formation of ultra-thin PtSi layers for infrared applications". 1998.
    10.1557/PROC-514-241
  101. U. Wahl; JG Correia; Guido Langouche; André Vantomme. "Lattice sites and stability of implanted Er in FZ and CZ Si". 1998.
  102. Hugo Bender; S Jin; Ming Fang Wu; André Vantomme; Hugo Pattyn; H Langouche. "Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon". 1998.
  103. Ming Fang Wu; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche; S Jin; Hugo Bender. "Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis". 1998.
    10.1557/PROC-514-191
  104. R A Donaton; Michele Stucchi; S Jin; Hugo Bender; Karen Maex; André Vantomme; Guido Langouche. "Titanium silicidation of submicron poly-SiGe runners". 1998.
  105. S Jin; H Bender; R A Donaton; K Maex; André Vantomme; Guido Langouche; A S Amour; J C Sturm. "Microstructural studies of Co silicide layers formed on SiGe and SiGeC". 1997.
  106. R A Donaton; S Jin; H Bender; M Zagrebnov; K Baert; K Maex; André Vantomme; Guido Langouche. "Formation of ultra-thin PtSi layers with a 2-step silicidation process". 1997.
    10.1016/S0167-9317(97)00153-6
  107. R Moons; W Deweerd; Hugo Pattyn; André Vantomme; Guido Langouche. "Ion channeling study of cavities in silicon formed by He implantation". 1997.
    10.1016/S0168-583X(96)00961-5
  108. U. Wahl; André Vantomme; M F Wu; Hugo Pattyn; Guido Langouche. "Channeled ion beam synthesis of erbium silicide: Comparison of experimental studies and binary collision simulations". 1997.
    10.1016/S0168-583X(96)00946-9
  109. G Weyer; Stefan Degroote; M Fanciulli; V N Fedoseyev; Guido Langouche; V I Mishin; A M Van Bavel; André Vantomme; ISOLDE Collaboration. "Mossbauer spectroscopy of Fe in silicon with the novel laser-ionized Mn-57(+) ion beam at ISOLDE". 1997.
    10.4028/www.scientific.net/MSF.258-263.437
  110. S Jin; Hugo Bender; R A Donaton; Karen Maex; André Vantomme; Guido Langouche; A St. Amour; J C Sturm. "Microstructural studies ofCo silicide layers formed on SiGe and SiGeC". 1997.
  111. U. Wahl; JG Correia; J De Wachter; Guido Langouche; JG Marques; R Moons; André Vantomme. "Lattice sites and damage annealing of implanted Tm and Er in Si". 1997.
    10.1557/PROC-469-407
  112. U. Wahl; J G Correia; Guido Langouche; J G Marques; André Vantomme. "Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C". 1997.
    10.4028/www.scientific.net/MSF.258-263.1503
  113. André Vantomme; M F Wu; U. Wahl; J DeWachter; S Degroote; H Pattyn; Guido Langouche; H Bender. "Channeled ion beam synthesis: A new technique for forming high-quality rare-earth silicides". 1996.
    10.1016/S0168-583X(96)00507-1
  114. M F Wu; André Vantomme; Hugo Pattyn; Guido Langouche; H Bender. "Ion beam synthesis of heteroepitaxial erbium silicide layers". 1996.
    10.1016/0169-4332(96)00044-X
  115. Patrick Wagner; V Metlushko; M VanBael; R J M Vullers; L Trappeniers; André Vantomme; J Vanacken; et al. "Magnetic transitions and magneto-transport in epitaxial Pr0.5Sr0.5MnO3 thin films". 1996.
    10.1051/jp4:1996347
  116. A M VanBavel; S Degroote; André Vantomme; Guido Langouche. "Mossbauer spectroscopy on bent Si crystals". 1996.
    10.1007/BF02458907
  117. Ming Fang Wu; André Vantomme; Hugo Pattyn; Guido Langouche; Hugo Bender. "High quality GdSi1.7 layers formed by high dose channeled implantation". 1996.
    10.1557/PROC-427-535
  118. S Degroote; André Vantomme; J Dekoster; R Moons; Guido Langouche. "Conversion electron Mossbauer study of epitaxial cubic metastable iron silicides". 1996.
  119. Hugo Bender; Ming Fang Wu; André Vantomme; Hugo Pattyn; Guido Langouche. "Structural characterization of ion beam synthesized epitaxial ErSi2-x layers". 1996.
    10.1557/PROC-402-499
  120. J DeWachter; S Blasser; H Hofsass; S Jahn; M Lindroos; R Moons; Hugo Pattyn; et al. "alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 23-27, 1995)". 1996.
    10.1016/0168-583X(95)00671-0
  121. André Vantomme; Stefan Degroote; J Dekoster; Hugo Bender; Guido Langouche. "Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy". 1996.
  122. MR DaSilva; AA Melo; JC Soares; MF DaSilva; R Moons; Guido Langouche; André Vantomme; et al. "Temperature dependence and annealing behaviour of Hf implanted (100)Si: HfSi2 synthesis". 1996.
  123. André Vantomme; M F Wu; Guido Langouche; J Tavares; H Bender. "The formation and thermal stability of ion-beam-synthesized ternary Me(x)Fe(1-x)Si(2) (Me=Co, Ni) in Si(111)". 1995.
    10.1016/0168-583X(95)00740-7
  124. S DEGROOTE; André Vantomme; J DEKOSTER; Guido Langouche. "CUBIC METASTABLE FESI1-X EPITAXIALLY GROWN ON SI AND MGO SUBSTRATES". 1995.
    10.1016/0169-4332(95)00097-6
  125. André Vantomme; S DEGROOTE; J DEKOSTER; Guido Langouche. "EPITAXY OF COSI2/SI(100) - FROM CO/TI/SI(100) TO REACTIVE DEPOSITION EPITAXY". 1995.
    10.1016/0169-4332(95)00089-5
  126. J DEKOSTER; H BEMELMANS; S DEGROOTE; J DEWACHTER; E JEDRYKA; R MOONS; André Vantomme; Guido Langouche. "MOSSBAUER-SPECTROSCOPY INVESTIGATION OF BODY-CENTERED-CUBIC CO IN CO/FE SUPERLATTICES PREPARED WITH MBE". 1995.
    10.1007/BF02146314
  127. J Dekoster; André Vantomme; S Degroote; R Moons; Guido Langouche. "Magnetic phase transition in the CsCl FeSi spacer in Fe/FeSi multilayers". 1995.
    10.1557/PROC-382-253
  128. André Vantomme; Ming Fang Wu; Stefan Degroote; J Dekoster; Guido Langouche; J Tavares; Hugo Bender. "Synthesis of CoxFe1-xSi2 with high dose ion implantation and reactive codeposition epitaxy". 1995.
  129. Milan Libezny; Jef Poortmans; J Dekoster; Stefan Degroote; André Vantomme; Guido Langouche; B G M de Lange; Johan Nijs. "RTA-preparation of b-FeSi2 layers from MBE-grown FeSi films deposited on SiGe(100) substrates". 1995.
    10.1557/PROC-387-407
  130. A M VanBavel; Stefan Degroote; André Vantomme; Andre Stesmans; Guido Langouche. "The bending of Si crystals as a means to determine the orientation of defects in Si". 1995.
    10.4028/www.scientific.net/MSF.196-201.1515
  131. M C RIDGWAY; André Vantomme; A M VANBAVEL; Guido Langouche; R W Fathauer; S Mantl; L J Schowalter; K N Tu. "THE INFLUENCE OF IMPLANTATION-INDUCED NONSTOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF COSI2". 1994.
  132. S DEGROOTE; T KOBAYASHI; J DEKOSTER; André Vantomme; Guido Langouche. "DEPTH-SELECTIVE INVESTIGATION OF FE-SILICIDES FORMED AFTER MOLECULAR-BEAM EPITAXY, USING CONVERSION ELECTRON MOSSBAUER SPECTROMETRY". 1994.
    10.1557/PROC-337-685
  133. André Vantomme; Ma Nicolet; G Bai; Db Fraser. "Growth of epitaxial cosi2, on si(100) using si(100)/ti/co bilayers". 1993.
    10.1016/0169-4332(93)90154-4
  134. André Vantomme; Ma Nicolet; Rg Long; Je Mahan; Fs Pool. "Reactive deposition epitaxy of crsi2". 1993.
    10.1016/0169-4332(93)90159-9
  135. André Vantomme; JH Song; DYE Lie; F Eisen; MA Nicolet; TK Carns; KL Wang. "Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C". 1993.
  136. J E Mahan; R G Long; André Vantomme; M A Nicole. "The Template Technique Applied to Epitaxial Growth of CrSi2 on Silicon (111)". 1993.
  137. Dyc LIE; André Vantomme; F Eisen; MA Nicole; V Arbetengels; KL Wang. "Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)". 1992.
  138. André Vantomme; Guido Langouche. "LOW-TEMPERATURE ION-BEAM MIXING OF CO/SI SYSTEMS". 1992.
    10.1007/BF02397476
  139. André Vantomme; M F WU; Guido Langouche. "SINGLE AND DOUBLE BURIED EPITAXIAL METALLIC LAYERS IN SI PREPARED BY ION-IMPLANTATION". 1992.
    10.1016/0168-583X(92)95182-Q
  140. André Vantomme; Mf Wu; Guido Langouche; Hélène Vanderstraeten; Yvan Bruynseraede. "Structural-properties of thin silicide layers formed by high-dose metal implantation". 1991.
    10.1016/0169-4332(91)90277-Q
  141. André Vantomme; Mf Wu; Guido Langouche; Karen Maex; Hélène Vanderstraeten; Yvan Bruynseraede. "Orientation and strain of single and double cosi2 epitaxial layers formed by ion-implantation". 1991.
    10.1016/0168-583X(91)95302-T
  142. MF WU; André Vantomme; Guido Langouche; Karen Maex; J VANHELLEMONT. "HETEROEPITAXIAL GROWTH OF COSI2/SI MULTILAYERS AND BURIED COXNI1-XSI2 LAYERS BY ION-BEAM SYNTHESIS". 1991.
  143. H BEMELMANS; M VANDERHEYDEN; André Vantomme; Guido Langouche; I BERKES; M FAHAD; O E HAJJAJI; R HASSANI; M MASSAQ. "LOCAL NUCLEAR ORIENTATION OF I-125 IN TIN AND GRAPHITE USING DEFECT INDUCED ELECTRIC-FIELD GRADIENTS". 1990.
    10.1007/BF02399900
  144. P Q ZHANG; L URHAHN; I DEZSI; André Vantomme; Guido Langouche. "SILICON AND TRANSITION METAL-SILICIDES IMPLANTED WITH FE-57". 1990.
    10.1007/BF02405492
  145. André Vantomme; I DEZSI; Guido Langouche. "COMPARATIVE-STUDY OF FE-57 IN COSI2 AFTER DIRECT ION-IMPLANTATION AND AFTER ION-IMPLANTATION OF A RADIOACTIVE PARENT". 1990.
    10.1016/0168-583X(90)90161-M
  146. M F WU; André Vantomme; H PATTYN; Guido Langouche; K MAEX; J VANHELLEMONT; J VANACKEN; H VLOEBERGHS; Y BRUYNSERAEDE. "FORMATION OF BURIED AND SURFACE COSI2 LAYERS BY ION-IMPLANTATION". 1990.
    10.1016/0168-583X(90)90920-P
  147. André Vantomme; M F WU; I DEZSI; Guido Langouche; K MAEX; J VANHELLEMONT. "FORMATION OF BURIED COSI2 LAYERS BY ION-IMPLANTATION, STUDIED BY MOSSBAUER-SPECTROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY". 1989.
    10.1016/0921-5107(89)90234-1
Artigo em revista
  1. Dapeng Ding; David van Driel; Lino Pereira; Jared F Bauters; Martijn J R Heck; Gesa Welker; Michiel J A de Dood; et al. "Probing interacting two-level systems with rare-earth ions". Physical Review B 101 1 (2020): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000510144200001\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1103/PhysRevB.101.014209
  2. Rico Rupp; Bart Caerts; André Vantomme; Jan Fransaer; Alexandru Vlad. "Lithium Diffusion in Copper". Journal Of Physical Chemistry Letters 10 17 (2019): 5206-5210. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000484884300067\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1021/acs.jpclett.9b02014
  3. Matthias Verlinde; Sandro Kraemer; J Moens; K Chrysalidis; J G Correia; S Cottenier; H De Witte; et al. "Alternative approach to populate and study the 229Th nuclear clock isomer". Physical Review C 100 2 (2019): 024315-024315. https://link.aps.org/doi/10.1103/PhysRevC.100.024315.
    10.1103/PhysRevC.100.024315
  4. Kelly Houben; Johanna K. Jochum; Daniel P Lozano; Manisha Bisht; Enric Menendez; Daniel G Merkel; Rudolf Ruffer; et al. "In situ study of the alpha-Sn to beta-Sn phase transition in low-dimensional systems: Phonon behavior and thermodynamic properties". Physical Review B 100 7 (2019): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000478992800005\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1103/PhysRevB.100.075408
  5. Johanna K. Jochum; Thomas Saerbeck; Vera Lazenka; Vincent Joly; Lianchen Shan; Hans-Gerd Boyen; Kristiaan Temst; André Vantomme; Margriet J. Van Bael. "Magnetic characterization of oblique angle deposited Co/CoO on gold nanoparticles". Journal of Magnetism and Magnetic Materials 483 (2019): 76-82. https://doi.org/10.1016/j.jmmm.2019.03.098.
    10.1016/j.jmmm.2019.03.098
  6. K van Stiphout; F A Geenen; N M Santos; S M C Miranda; Vincent Joly; J Demeulemeester; C Detavernier; et al. "Impurity-enhanced solid-state amorphization: the Ni-Si thin film reaction altered by nitrogen". Journal Of Physics D-Applied Physics 52 14 (2019): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000457844800001\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1088/1361-6463/ab00d2
  7. D P Lozano; S Couet; C Petermann; G Hamoir; Johanna K. Jochum; T Picot; E Menendez; et al. "Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects". Physical Review B 99 6 (2019): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000459322400005\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1103/PhysRevB.99.064512
  8. Giulio Benetti; Emanuele Cavaliere; Rosaria Brescia; Sebastian Salassi; Riccardo Ferrando; André Vantomme; Lucia Pallecchi; et al. "Tailored Ag-Cu-Mg multielemental nanoparticles for wide-spectrum antibacterial coating". Nanoscale 11 4 (2019): 1626-1635. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000459910900012\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1039/c8nr08375d
  9. Valeriia Grigel; Laxmi Kishore Sagar; Kim De Nolf; Qiang Zhao; André Vantomme; Jonathan De Roo; Ivan Infante; Zeger Hens. "The Surface Chemistry of Colloidal HgSe Nanocrystals, toward Stoichiometric Quantum Dots by Design". Chemistry Of Materials 30 21 (2018): 7637-7647. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000450696100030\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1021/acs.chemmater.8b02908
  10. H Modarresi; E Menendez; V V Lazenka; N Pavlovic; M Bisht; M Lorenz; C Petermann; et al. "Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift". Applied Physics Letters 113 14 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000446820600010\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1063/1.5045617
  11. A. L. La Rooij; S. Couet; M. C. van der Krogt; A. Vantomme; K. Temst; R. J. C. Spreeuw. "Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200 nm". Journal of Applied Physics (2018): https://doi.org/10.1063/1.5038165.
    10.1063/1.5038165
  12. Jorick Maes; Lieve Balcaen; Emile Drijvers; Qjang Zhao; Jonathan De Roo; André Vantomme; Frank Vanhaecke; Pieter Geiregat; Zeger Hens. "Light Absorption Coefficient of CsPbBr3 Perovskite Nanocrystals". Journal Of Physical Chemistry Letters 9 11 (2018): 3093-3097. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000435026100059\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1021/acs.jpclett.8b01065
  13. Z M Khumalo; M Blumenthal; M Topic; C Funke; J Bollmann; André Vantomme; C Ndlangamandla. "Oxide reduced silicon nanowires". Current Applied Physics 18 5 (2018): 576-582.
    10.1016/j.cap.2018.02.010
  14. Johanna K. Jochum; Michael Lorenz; Haraldur P Gunnlaugsson; Christian Patzig; Thomas Hoeche; Marius Grundmann; André Vantomme; et al. "Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers". Nanoscale 10 12 (2018): 5574-5580. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000428787600021\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1039/c8nr00430g
  15. F. A. Geenen; K. van Stiphout; A. Nanakoudis; S. Bals; A. Vantomme; J. Jordan-Sweet; C. Lavoie; C. Detavernier. "Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration". Journal of Applied Physics (2018): https://doi.org/10.1063/1.5009641.
    10.1063/1.5009641
  16. Johanna K. Jochum; Michael Lorenz; Haraldur P. Gunnlaugsson; Christian Patzig; Thomas Höche; Marius Grundmann; André Vantomme; et al. "Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3–BiFeO3 multilayers". Nanoscale (2018): https://doi.org/10.1039/C8NR00430G.
    10.1039/C8NR00430G
  17. Thomas Elias Cocolios; Mark Huyse; André Vantomme. "The Institute for Nuclear and Radiation Physics at the University of Leuven". Nuclear Physics News 27 4 (2017): 18-22.
    10.1080/10619127.2017.1317178
  18. K van Stiphout; F A Geenen; B De Schutter; N M Santos; S M C Miranda; V Joly; C Detavernier; et al. "Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture". Journal of Physics D: Applied Physics (2017): https://doi.org/10.1088/1361-6463/aa8cad.
    10.1088/1361-6463/aa8cad
  19. Jolien Dendooven; Ranjith K Ramachandran; Eduardo Solano; Mert Kurttepeli; Lisa Geerts; Gino Heremans; Jan Rongé; et al. "Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition". Nature Communications 8 1 (2017):
    10.1038/s41467-017-01140-z
  20. Valérie Augustyns; Koen van Stiphout; Vincent Joly; Tiago Lima; Gertjan Lippertz; Maarten Trekels; Enric Menéndez Dalmau; et al. "Evidence of tetragonal distortion as the origin of the ferromagnetic ground state in ¿ -Fe nanoparticles". Physical Review B 96 174410 (2017):
    10.1103/PhysRevB.96.174410
  21. V. Augustyns; M. Trekels; H. P. Gunnlaugsson; H. Masenda; K. Temst; A. Vantomme; L. M. C. Pereira. "Multipurpose setup for low-temperature conversion electron Mössbauer spectroscopy". Review of Scientific Instruments 88 5 (2017): 053901-053901. https://doi.org/10.1063/1.4982954.
    10.1063/1.4982954
  22. Kelly Houben; Sebastien Couet; Maarten Trekels; Enric Menéndez Dalmau; Tobias Peissker; Jin Won Seo; M Y Hu; et al. "Lattice dynamics in Sn nano islands and cluster-assembled films". Physical Review B 95 15 (2017):
    10.1103/PhysRevB.95.155413
  23. U. Wahl; lmarina Pinto de Almeida Amorim; Valérie Augustyns; A Costa; E David-Bosne; Tiago Lima; Gertjan Lippertz; et al. "Lattice location of Mg in GaN: a fresh look at doping limitations". Physical Review Letters 118 095501 (2017): 1-6.
    10.1103/PhysRevLett.118.095501
  24. Annelore Schrauwen; Jelle Demeulemeester; D Deduytsche; W Devulder; Kristiaan Temst; C Detavernier; C M Comrie; André Vantomme. "Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): nucleation and solid solubility of the monosilicides". Acta Materialia 130 (2017): 19-27.
    10.1016/j.actamat.2017.03.022
  25. Vera Lazenka; Johanna K. Jochum; Michael Lorenz; Hiwa Modarresi; Haraldur P. Gunnlaugsson; Marius Grundmann; Margriet J. Van Bael; Kristiaan Temst; André Vantomme. "Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices". Applied Physics Letters 110 9 (2017): 092902-092902. https://doi.org/10.1063/1.4977434.
    10.1063/1.4977434
  26. Annelore Schrauwen; Koen van Stiphout; Jelle Demeulemeester; B De Schutter; W Devulder; C Comrie; C Detavernier; Kristiaan Temst; André Vantomme. "The role of composition and microstructure in Ni–W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si". Journal Of Physics D-Applied Physics 50 065303 (2017): 1-12.
    10.1088/1361-6463/aa4ed7
  27. Enric Menendez; Hiwa Modarresi; Claire Petermann; Josep Nogues; Neus Domingo; Haoliang Liu; Brian J Kirby; et al. "Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography". Small 13 11 (2017): 1-10.
    10.1002/smll.201603465
  28. C. M. Comrie; C. B. Mtshali; P. T. Sechogela; N. M. Santos; K. van Stiphout; R. Loo; W. Vandervorst; A. Vantomme. "Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers". Journal of Applied Physics 120 14 (2016): 145303-145303. https://doi.org/10.1063/1.4964692.
    10.1063/1.4964692
  29. Laxmi Kishore Sagar; Willem Walravens; Qiang Zhao; André Vantomme; Pieter Geiregat; Zeger Hens. "PbS/CdS Core/Shell Quantum Dots by Additive, Layer-by-Layer Shell Growth". Chemistry Of Materials 28 19 (2016): 6953-6959.
    10.1021/acs.chemmater.6b02638
  30. Claudia Fleischmann; Ruben Lieten; Peter Hermann; Philipp Hoenicke; Burkhard Beckhoff; Felix Seidel; Bastien Douhard; et al. "Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy". Journal Of Applied Physics 120 8 (2016): 1-11.
    10.1063/1.4961396
  31. Kilian Devloo-Casier; Pieter Geiregat; Karl F Ludwig; Koen van Stiphout; André Vantomme; Zeger Hens; Christophe Detavernier; Jolien Dendooven. "A Case Study of ALD Encapsulation of Quantum Dots: Embedding Supported CdSe/CdS/ZnS Quantum Dots in a ZnO Matrix". Journal Of Physical Chemistry C 120 32 (2016): 18039-18045.
    10.1021/acs.jpcc.6b04398
  32. Dapeng Ding; Lino Pereira; Jared F Bauters; Martijn J R Heck; Gesa Welker; André Vantomme; John E Bowers; Michiel J A de Dood; Dirk Bouwmeester. "Multidimensional Purcell effect in an ytterbium-doped ring resonator". Nature Photonics 10 6 (2016): 385-389.
    10.1038/NPHOTON.2016.72
  33. Bob De Schutter; Koen van Stiphout; Nuno N.M. Santos; E Bladt; J L. Jordan-Sweet; S Bals; L Christian; et al. "Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)". Journal Of Applied Physics 119 13 (2016):
    10.1063/1.4945317
  34. Haoliang Liu; Steven Brems; Yujia Zeng; Kristiaan Temst; André Vantomme; Chris Van Haesendonck. "Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films". Journal Of Physics-Condensed Matter 28 19 (2016): 1-9.
    10.1088/0953-8984/28/19/196002
  35. André Vantomme. "50 years of ion channeling in materials science". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 371 (2016): 12-26.
    10.1016/j.nimb.2015.11.035
  36. M Lorenz; Vera Lazenka; P Schwinkendorf; Margriet J. Van Bael; André Vantomme; Kristiaan Temst; M Grundmann; T Höche. "Epitaxial Coherence at Interfaces as Origin of High Magnetoelectric Coupling in Multiferroic BaTiO3–BiFeO3 Superlattices". Advanced Materials Interfaces 1500822 (2016): 1-7.
    10.1002/admi.201500822
  37. Manisha M. Bisht; Sebastien Couet; Vera Lazenka; Hiwa Modarresi; Rudolf Rueffer; Jean-Pierre Locquet; Margriet J. Van Bael; André Vantomme; Kristiaan Temst. "Electric Polarity-Dependent Modification of the Fe/BaTiO3 Interface". Advanced Materials Interfaces 3 4 (2016): 1-6.
    10.1002/admi.201500433
  38. M Lorenz; G Wagner; Vera Lazenka; P Schwinkendorf; M Bonholzer; Margriet J. Van Bael; André Vantomme; et al. "Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO3-BiFeO3 Composite Thin Films". Materials 9 44 (2016): 1-13.
    10.3390/ma9010044
  39. Jan Dijkmans; Michiel Dusselier; Wout Janssens; Maarten Trekels; André Vantomme; Eric Breynaert; Christine Eva Antonia Kirschhock; Bert Sels. "An inner/outer-sphere stabilized Sn active site in Beta zeolite: spectroscopic evidence and kinetic consequences". Acs Catalysis 6 1 (2016): 31-46.
    10.1021/acscatal.5b01822
  40. Hiwa Modarresi; Vera Lazenka; E Menendez; M Lorenz; Manisha M. Bisht; Alexander Volodine; Chris Van Haesendonck; et al. "Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3-CoFe2O4 nanocomposite thin films". Journal Of Physics D-Applied Physics 49 32 (2016): 1-6.
    10.1088/0022-3727/49/32/325302
  41. André Vantomme; Kristiaan Temst. "Proceedings of the 19th International Conference on Ion Beam Modification of Materials (IBMM 2014)". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 365 (2015): 1-2. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000366786900001\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/j.nimb.2015.11.011
  42. M Sternik; Sebastien Couet; J Lazewski; P T Jochym; K Parlinski; André Vantomme; Kristiaan Temst; P Piekarz. "Dynamical properties of ordered Fe-Pt alloys". Journal Of Alloys And Compounds 651 (2015): 528-536.
    10.1016/j.jallcom.2015.08.097
  43. Z Y Nuru; Daniel Perez Lozano; K Kaviyarasu; André Vantomme; M Maaza. "Annealing effect on the optical properties and interdiffusion of MgO/Zr/MgO multilayered selective solar absorber coatings". Solar Energy 120 (2015): 123-130.
    10.1016/j.solener.2015.07.022
  44. Kelly Houben; Enric Menéndez Dalmau; Christian P Romero; Maarten Trekels; André Vantomme; Kristiaan Temst; Margriet J. Van Bael. "Coexistence of superconductivity and ferromagnetism in cluster-assembled Sn-Co nanocomposites". Journal Of Alloys And Compounds 637 (2015): 509-516.
    10.1016/j.jallcom.2015.03.007
  45. Tomas Skeren; Dries Doornaert; Christ Glorieux; Hiwa Modarresi; Tiannan Guan; Kristiaan Temst; wilfried vandervorst; André Vantomme. "Ion-induced pattern formation on indium tin oxide for alignment of liquid crystals". Thin Solid Films 589 (2015): 315-321.
    10.1016/j.tsf.2015.05.048
  46. Federica Gencarelli; Didier Grandjean; Yosuke Shimura; Benjamin Vincent; Dipanjan Banerjee; André Vantomme; wilfried vandervorst; et al. "Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films". Journal Of Applied Physics 117 9 (2015): 1-11.
    10.1063/1.4913856
  47. Jan Dijkmans; Michiel Dusselier; Dries Gabriels; Kristof Houthoofd; Pieter C M M Magusin; shuigen huang; Yiannis Pontikes; et al. "Cooperative Catalysis for Multistep Biomass Conversion with Sn/Al Beta Zeolite". Acs Catalysis 5 2 (2015): 928-940. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000349275300050\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1021/cs501388e
  48. Tiago Lima; U. Wahl; Valérie Augustyns; Daniel José da Silva; A Costa; Kelly Houben; K W Edmonds; et al. "Identification of the interstitial Mn site on ferromagnetic (Ga,Mn)As". Applied Physics Letters 106 1 (2015): 1-5.
    10.1063/1.4905556
  49. Michael Lorenz; Gerald Wagner; Vera Lazenka; Peter Schwinkendorf; Hiwa Modarresi; Margriet J. Van Bael; André Vantomme; et al. "Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations". Applied Physics Letters 106 1 (2015): 0129051-0129055.
    10.1063/1.4905343
  50. Vera Lazenka; Michael Lorenz; Hiwa Modarresi; Manisha M. Bisht; Rudolf Rueffer; Michael Bonholzer; Marius Grundmann; et al. "Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer". Applied Physics Letters 106 8 (2015): 1-4.
    10.1063/1.4913444
  51. Haoliang Liu; Tomas Skeren; Alexander Volodine; Kristiaan Temst; André Vantomme; Chris Van Haesendonck. "Tailoring the magnetic anisotropy, magnetization reversal, and anisotropic magnetoresistance of Ni films by ion sputtering". Physical Review B 91 10 (2015): 1-7.
    10.1103/PhysRevB.91.104403
  52. Haoliang Liu; Steven Brems; Yujia Zeng; Kristiaan Temst; André Vantomme; Chris Van Haesendonck. "Manipulating the asymmetry of magnetization reversal in epitaxial CoO/Co films". Physical Review B 90 21 (2014): 1-5.
    10.1103/PhysRevB.90.214402
  53. Enric Menéndez Dalmau; T Dias; J Geshev; J F Lopez-Barbera; J Nogues; R Steitz; B J Kirby; et al. "Interdependence between training and magnetization reversal in granular Co-CoO exchange bias systems". Physical Review B 89 14 (2014):
    10.1103/PhysRevB.89.144407
  54. Enric Menéndez Dalmau; Hiwa Modarresi; Tiago Dias; J Geshev; Lino Pereira; Kristiaan Temst; André Vantomme. "Tuning the ferromagnetic-antiferromagnetic interfaces of granular Co-CoO exchange bias systems by annealing". Journal Of Applied Physics 115 133915 (2014): 133915-1.
    10.1063/1.4870713
  55. Danying Li; Yujia Zeng; D Batuk; Lino Pereira; Z Z Ye; Claudia Fleischmann; Mariela Menghini; et al. "Relaxor Ferroelectricity and Magnetoelectric Coupling in ZnO-Co Nanocomposite Thin Films: Beyond Multiferroic Composites". Acs Applied Materials & Interfaces 6 7 (2014): 4737-4742.
    10.1021/am4053877
  56. Lino Pereira; U. Wahl; J G Correia; lmarina Pinto de Almeida Amorim; D J Silva; S Decoster; M R da Silva; Kristiaan Temst; André Vantomme. "Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 332 (2014): 143-147.
    10.1016/j.nimb.2014.02.048
  57. Michael Lorenz; Vera Lazenka; Peter Schwinkendorf; Francis Bern; Michael Ziese; Hiwa Modarresi; Alexander Volodine; et al. "Multiferroic BaTiO3-BiFeO3 composite thin films and multilayers: strain engineering and magnetoelectric coupling". Journal Of Physics D-Applied Physics 47 13 (2014):
    10.1088/0022-3727/47/13/135303
  58. Ruben Dierick; Freya Van den Broeck; Kim De Nolf; Qiang Zhao; André Vantomme; Jose C Martins; Zeger Hens. "Surface Chemistry of CuInS2 Colloidal Nanocrystals, Tight Binding of L-Type Ligands". Chemistry Of Materials 26 20 (2014): 5950-5957.
    10.1021/cm502687p
  59. Sebastien Couet; Manisha Bisht; Maarten Trekels; Mariela Menghini; Claire Petermann; Margriet J. Van Bael; Jean-Pierre Locquet; et al. "Electric Field-Induced Oxidation of Ferromagnetic/Ferroelectric Interfaces". Advanced Functional Materials 24 1 (2014): 71-76. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000330589300007\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1002/adfm.201301160
  60. Yolanda Justo; Laxmi Kishore Sagar; Stijn Flamee; Qiang Zhao; André Vantomme; Zeger Hens. "Less Is More. Cation Exchange and the Chemistry of the Nanocrystal Surface". Acs Nano 8 8 (2014): 7948-7957.
    10.1021/nn5037812
  61. Bert De Schutter; W Devulder; Annelore Schrauwen; Koen van Stiphout; T Perkisas; S Bals; André Vantomme; C Detavernier. "Phase formation in intermixed Ni-Ge thin films: Influence of Ge content and low-temperature nucleation of hexagonal nickel germanides". Microelectronic Engineering 120 (2014): 168-173.
    10.1016/j.mee.2013.09.004
  62. T Dias; Enric Menéndez Dalmau; H Liu; Chris Van Haesendonck; André Vantomme; Kristiaan Temst; J E Schmidt; R Giulian; J Geshev. "Rotatable anisotropy driven training effects in exchange biased Co/CoO films". Journal Of Applied Physics 115 24 (2014): 1-6.
    10.1063/1.4885157
  63. F A Geenen; W Knaepen; Jelle Demeulemeester; K De Keyser; J L Jordan-Sweet; C Lavoie; André Vantomme; C Detavernier. "On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films". Journal Of Alloys And Compounds 611 (2014): 149-156.
    10.1016/j.jallcom.2014.04.142
  64. Enric Menéndez Dalmau; A Hynowska; J Fornell; S Surinach; J Montserrat; Kristiaan Temst; André Vantomme; et al. "Influence of the irradiation temperature on the surface structure and physical/chemical properties of Ar ion-irradiated bulk metallic glasses". Journal Of Alloys And Compounds 610 (2014): 118-125.
    10.1016/j.jallcom.2014.04.219
  65. Huan Wang; Thomas Picot; Kelly Houben; Tom Moorkens; J Grigg; Chris Van Haesendonck; E Biermans; et al. "The superconducting proximity effect in epitaxial Al/Pb nanocomposites". Superconductor Science & Technology 27 1 (2014): 1-8.
    10.1088/0953-2048/27/1/015008
  66. Ruben Lieten; Claudia Fleischmann; Sven Peters; Nuno N.M. Santos; Ligia Marina Amorim; Yosuke Shimura; Noriyuki Uchida; et al. "Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si". Ecs Journal Of Solid State Science And Technology 3 12 (2014):
    10.1149/2.0091412jss
  67. lmarina Pinto de Almeida Amorim; U. Wahl; Lino Pereira; Stefan S. Decoster; D J Silva; A Gottberg; J G Correia; Kristiaan Temst; André Vantomme. "Precise lattice location of substitutional and interstitial Mg in AlN". Applied Physics Letters 103 26 (2013):
    10.1063/1.4858389
  68. Enric Menéndez Dalmau; C Templier; P Garcia-Ramirez; J Santiso; André Vantomme; Kristiaan Temst; J Nogue´s. "Magnetic Properties of Single Crystalline Expanded Austenite". Acs Applied Materials & Interfaces 5 20 (2013): 10118-10126.
    10.1021/am402773w
  69. Tomas Skeren; Kristiaan Temst; wilfried vandervorst; André Vantomme. "Ion-induced roughening and ripple formation on polycrystalline metallic ¿lms". New Journal Of Physics 15 9 (2013): 93047-93047.
    10.1088/1367-2630/15/9/093047
  70. Lino Pereira; U. Wahl; J G Correia; lmarina Pinto de Almeida Amorim; D J Silva; E Bosne; S Decoster; et al. "Minority anion substitution by Ni in ZnO". Applied Physics Letters 103 4 (2013):
    10.1063/1.4820254
  71. D Y Li; Yujia Zeng; Lino Pereira; D Batuk; Jan Hadermann; Y Z Zhang; Z Z Ye; et al. "Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films". Journal Of Applied Physics 114 3 (2013): 1-6.
    10.1063/1.4815877
  72. Ruben Lieten; Jin Won Seo; Stefan S. Decoster; André Vantomme; Sven Peters; Karen Bustillo; Eugene Haller; Mariela Menghini; Jean-Pierre Locquet. "Tensile strained GeSn on Si by solid phase epitaxy". Applied Physics Letters 102 5 (2013):
    10.1063/1.4790302
  73. Lino Pereira; J P Araujo; U. Wahl; S Decoster; Margriet J. Van Bael; Kristiaan Temst; André Vantomme. "Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN". Journal Of Applied Physics 113 2 (2013):
    10.1063/1.4774102
  74. Alexander Riskin; Andrew M Beale; Hans-Gerhard Boyen; André Vantomme; An Hardy; Marlies K Van Bael. "The use of XAFS to determine the nature of interaction of iron and molybdenum metal salts within PS-b-P2VP micelles". Physical Chemistry Chemical Physics 15 5 (2013): 1675-1681.
    10.1039/c2cp43046k
  75. Antti Hassinen; Raquel Gomes; Kim De Nolf; Qiang Zhao; André Vantomme; Jose C Martins; Zeger Hens. "Surface Chemistry of CdTe Quantum Dots Synthesized in Mixtures of Phosphonic Acids and Amines: Formation of a Mixed Ligand Shell". Journal Of Physical Chemistry C 117 13936 (8pp (2013):
    10.1021/jp4008575
  76. Lino Pereira; U. Wahl; J G Correia; Margriet J. Van Bael; Kristiaan Temst; André Vantomme; J P Araujo. "Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO". Journal Of Physics-Condensed Matter 25 41 (2013):
    10.1088/0953-8984/25/41/416001
  77. Sebastien Couet; Joost Demeter; Enric Menéndez Dalmau; R Rueffer; C J Kinane; Bart Laenens; A Teichert; et al. "The magnetic structure of exchange coupled FePt/FePt3 thin films". Journal Of Applied Physics 113 1 (2013): 013909-013916.
    10.1063/1.4772971
  78. Sebastien Couet; H Peelaers; Maarten Trekels; Kelly Houben; M Y Hu; J Y Zhao; W Bi; et al. "Interplay between lattice dynamics and superconductivity in Nb3Sn thin films". Physical Review B 88 4 (2013):
    10.1103/PhysRevB.88.045437
  79. C M Comrie; H Ahmed; Dries Smeets; Jelle Demeulemeester; S Turner; G Van Tendeloo; C Detavernier; André Vantomme. "Effect of high temperature deposition on CoSi2 phase formation". Journal Of Applied Physics 113 23 (2013):
    10.1063/1.4811352
  80. Ben de Vries; U. Wahl; S Ruffenach; O Briot; André Vantomme. "Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities". Applied Physics Letters 103 17 (2013): 172108-172108.
    10.1063/1.4826705
  81. Eva Pellicer; Enric Menéndez Dalmau; Jordina Fornell; Josep Nogués; André Vantomme; Kristiaan Temst; Jordi Sort. "Mesoporous Oxide-Diluted Magnetic Semiconductors Prepared by Co Implantation in Nanocast 3D-Ordered In2O3-y Materials". Journal Of Physical Chemistry C 117 33 (2013): 17084-17091.
    10.1021/jp405376k
  82. Marcio Solino Pessoa; Fernando Pelegrini; Tales Costa de Freitas; Edson Caetano Passamani; Sebastien Couet; Kristiaan Temst; André Vantomme. "Magnetic Anisotropy of Epitaxially Grown Fe/Mn/Co Trilayers". Ieee Transactions On Magnetics 49 8 (2013):
    10.1109/TMAG.2013.2259806
  83. Annelore Schrauwen; Jelle Demeulemeester; Arul Arul; wilfried vandervorst; C M Comrie; C Detavernier; Kristiaan Temst; André Vantomme. "On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction". Journal Of Applied Physics 114 6 (2013):
    10.1063/1.4818333
  84. Federica Gencarelli; B Vincent; Jelle Demeulemeester; André Vantomme; A Moussa; A Franquet; Arul Arul; et al. "Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn". Ecs Journal Of Solid State Science And Technology 2 4 (2013):
    10.1149/2.011304jss
  85. Jelle Demeulemeester; Dries Smeets; C M Comrie; N P Barradas; A Vieira; C Van Bockstael; C Detavernier; Kristiaan Temst; André Vantomme. "On the growth kinetics of Ni(Pt) silicide thin films". Journal Of Applied Physics 113 16 (2013):
    10.1063/1.4802738
  86. Enric Menéndez Dalmau; Joost Demeter; Jelle Van Eyken; Przemyslaw Nawrocki; Ewa Jedryka; Marek Wojcik; Jose Francisco Lopez-Barbera; et al. "Improving the Magnetic Properties of Co-CoO Systems by Designed Oxygen Implantation Profiles". Acs Applied Materials & Interfaces 5 10 (2013): 4320-4327.
    10.1021/am400529r
  87. Claudia Fleischmann; michel houssa; Matthias Mueller; Burkhard Beckhoff; Hans-Gerd Boyen; Marc Meuris; Kristiaan Temst; André Vantomme. "Liquid-Phase Adsorption of Sulfur on Germanium: Reaction Mechanism and Atomic Geometry". Journal Of Physical Chemistry C 117 15 (2013):
    10.1021/jp306536n
  88. Claudia Fleischmann; Koen Schouteden; Matthias Mueller; Philipp Hoenicke; Burkhard Beckhoff; Sonja Sioncke; Hans-Gerd Boyen; et al. "Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices". Journal Of Materials Chemistry C 1 26 (2013): 4105-4113.
    10.1039/c3tc30424h
  89. S Decoster; C J Glover; B Johannessen; R Giulian; D J Sprouster; P Kluth; L L Araujo; et al. "Lift-off protocols for thin films for use in EXAFS experiments". Journal Of Synchrotron Radiation 20 3 (6 pages (2013):
    10.1107/S0909049513005049
  90. Lino Pereira; U. Wahl; J G Correia; S Decoster; L M Amorim; M R da Silva; J P Araujo; André Vantomme. "Evidence of N substitution by Mn in GaN". Physical Review B 86 19 (2012):
    10.1103/PhysRevB.86.195202
  91. Lino Pereira; U. Wahl; S Decoster; J G Correia; L M Amorim; M R da Silva; J P Araujo; André Vantomme. "Stability and diffusion of interstitial and substitutional Mn in GaAs of different doping types". Physical Review B 86 12 (2012):
    10.1103/PhysRevB.86.125206
  92. C P Romero; Alexander Volodine; M Di Vece; Hanna Paddubrouskaya; Huan Wang; André Vantomme; Chris Van Haesendonck; Peter Lievens. "Passivation of cobalt nanocluster assembled thin films with hydrogen". Thin Solid Films 520 17 (2012): 5584-5588.
    10.1016/j.tsf.2012.04.041
  93. Claudia Fleischmann; Koen Schouteden; Clement Merckling; Sonja Sioncke; Marc Meuris; Chris Van Haesendonck; Kristiaan Temst; André Vantomme. "Adsorption of O-2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure". Journal Of Physical Chemistry C 116 18 (2012): 9925-9929.
    10.1021/jp2101144
  94. F Groestlinger; M Rennhofer; M Leitner; E Partyka-Jankowska; B Sepiol; Bart Laenens; Nikie Planckaert; André Vantomme. "Anisotropic diffusion in FePt thin films". Physical Review B 85 13 (2012):
    10.1103/PhysRevB.85.134302
  95. John Sundar Kamal; Abdoulghafar Omari; Karen Van Hoecke; Qiang Zhao; André Vantomme; Frank Vanhaecke; Richard Karel Capek; Zeger Hens. "Size-Dependent Optical Properties of Zinc Blende Cadmium Telluride Quantum Dots". Journal Of Physical Chemistry C 116 8 (2012): 5049-5054.
    10.1021/jp212281m
  96. Stefan S. Decoster; U. Wahl; Stefaan Cottenier; J G Correia; T Mendonca; lmarina Pinto de Almeida Amorim; Lino Pereira; André Vantomme. "Lattice position and thermal stability of diluted As in Ge". Journal Of Applied Physics 111 5 (2012):
    10.1063/1.3692761
  97. Yujia Zeng; Lino Pereira; Mariela Menghini; Kristiaan Temst; André Vantomme; Jean-Pierre Locquet; Chris Van Haesendonck. "Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation". Nano Letters 12 2 (2012): 666-672.
    10.1021/nl2034656
  98. Jelle Demeulemeester; W Knaepen; Dries Smeets; Annelore Schrauwen; C M Comrie; N P Barradas; A Vieira; et al. "In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)". Journal Of Applied Physics 111 4 (2012):
    10.1063/1.3681331
  99. Huan Wang; Jo Cuppens; E Biermans; S Bals; L Fernandez-Ballester; K O Kvashnina; W Bras; et al. "Tuning of the size and the lattice parameter of ion-beam synthesized Pb nanoparticles embedded in Si". Journal Of Physics D-Applied Physics 45 3 (2012):
    10.1088/0022-3727/45/3/035301
  100. Stijn Schaltin; Lucia D'Urzo; Qiang Zhao; André Vantomme; Harald Plank; Gerald Kothleitner; Christian Gspan; Koen Binnemans; Jan Fransaer. "Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer". Physical Chemistry Chemical Physics 14 39 (2012): 13624-13629.
    10.1039/c2cp41786c
  101. C M Comrie; Dries Smeets; K J Pondo; C van der Walt; Jelle Demeulemeester; W Knaepen; C Detavernier; A Habanyama; André Vantomme. "Determination of the dominant diffusing species during nickel and palladium germanide formation". Thin Solid Films 526 (2012): 261-268.
    10.1016/j.tsf.2012.10.113
  102. Joost Demeter; Enric Menéndez Dalmau; A Teichert; R Steitz; Dipak Paramanik; Chris Van Haesendonck; André Vantomme; Kristiaan Temst. "Influence of magnetocrystalline anisotropy on the magnetization reversal mechanism in exchange bias Co/CoO bilayers". Solid State Communications 152 4 (2012): 292-295.
    10.1016/j.ssc.2011.11.026
  103. Joost Demeter; Enric Menéndez Dalmau; Annelore Schrauwen; A Teichert; R Steitz; Stijn Vandezande; A R Wildes; et al. "Exchange bias induced by O ion implantation in ferromagnetic thin films". Journal Of Physics D-Applied Physics 45 40 (2012):
    10.1088/0022-3727/45/40/405004
  104. Stefan S. Decoster; B Johannessen; C J Glover; Stefaan Cottenier; T Bierschenk; H Salama; Florence Kremer; et al. "Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure". Applied Physics Letters 101 26 (2012): 261904-261904.
    10.1063/1.4773185
  105. Joost Demeter; Enric Menéndez Dalmau; Kristiaan Temst; André Vantomme. "Fluence dependence of ion implantation-induced exchange bias in face centered cubic Co thin films". Journal Of Applied Physics 110 12 (2011):
    10.1063/1.3669445
  106. Jelle Demeulemeester; Annelore Schrauwen; O Nakatsuka; S Zaima; M Adachi; Y Shimura; C M Comrie; et al. "Sn diffusion during Ni germanide growth on Ge1-xSnx". Applied Physics Letters 99 21 (2011):
    10.1063/1.3662925
  107. Lino Pereira; T Som; J Demeulemeester; Margriet J. Van Bael; Kristiaan Temst; André Vantomme. "Paramagnetism and antiferromagnetic interactions in Cr-doped GaN". Journal Of Physics-Condensed Matter 23 346004 (2011): 346004-346004.
    10.1088/0953-8984/23/34/346004
  108. Sebastien Couet; Maarten Trekels; R Rueffer; Jo Cuppens; Claire Petermann; André Vantomme; Margriet J. Van Bael; Kristiaan Temst. "Probing the magnetization inside a superconducting Nb film by nuclear resonant scattering". Applied Physics Letters 99 9 (2011):
    10.1063/1.3625941
  109. Claudia Fleischmann; michel houssa; S Sioncke; B Beckhoff; M Mueller; P Hoenicke; M Meuris; Kristiaan Temst; André Vantomme. "Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces". Journal Of The Electrochemical Society 158 10 (2011):
    10.1149/1.3624762
  110. S Takeuchi; Y Shimura; T Nishimura; B Vincent; Geert Eneman; T Clarysse; Jelle Demeulemeester; et al. "Ge1-xSnx stressors for strained-Ge CMOS". Solid-State Electronics 60 1 (2011): 53-57.
    10.1016/j.sse.2011.01.022
  111. Lino Pereira; J P Araujo; Margriet J. Van Bael; Kristiaan Temst; André Vantomme. "Practical limits for detection of ferromagnetism using highly sensitive magnetometry techniques". Journal Of Physics D-Applied Physics 44 21 (2011):
    10.1088/0022-3727/44/21/215001
  112. Tsuyoshi Nishimura; Osamu Nakatsuka; Yosuke Shimura; Shotaro Takeuchi; Benjamin Vincent; André Vantomme; Johan Dekoster; et al. "Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems". Solid-State Electronics 60 1 (2011): 46-52.
    10.1016/j.sse.2011.01.025
  113. S Sioncke; H C Lin; G Brammertz; Annelies Delabie; T Conard; A Franquet; M Meuris; et al. "Atomic layer deposition of high-kappa dielectrics on sulphur-passivated germanium". Journal Of The Electrochemical Society 158 7 (2011):
    10.1149/1.3582524
  114. Lino Pereira; U. Wahl; Stefan S. Decoster; J G Correia; M R da Silva; André Vantomme; J P Araujo. "Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability". Applied Physics Letters 98 20 (2011):
    10.1063/1.3592568
  115. Benjamin Vincent; Y Shimura; Shotaro Takeuchi; T Nishimura; Geert Eneman; Andrea Firrincieli; Jelle Demeulemeester; et al. "Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors". Microelectronic Engineering 88 4 (2011): 342-346.
    10.1016/j.mee.2010.10.025
  116. Joost Demeter; A Teichert; K Kiefer; D Wallacher; H Ryll; Enric Menéndez Dalmau; Dipak Paramanik; et al. "Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements". Review Of Scientific Instruments 82 3 (2011): 1-7.
    10.1063/1.3541839
  117. Raquel Gomes; Antti Hassinen; Agnieszka Szczygiel; Qiang Zhao; André Vantomme; Jose C Martins; Zeger Hens. "Binding of Phosphonic Acids to CdSe Quantum Dots: A Solution NMR Study". Journal Of Physical Chemistry Letters 2 3 (2011): 145-152.
    10.1021/jz1016729
  118. M Mamor; B Pipeleers; F D Auret; André Vantomme. "Defect production in strained p-type Si1-xGex by Er implantation". Journal Of Applied Physics 109 1 (2011):
    10.1063/1.3531539
  119. Michaël Maes; Maarten Trekels; Mohammed Boulhout; Stijn Schouteden; Frederik Vermoortele; Luc Alaerts; Daniela Heurtaux; et al. "Selective Removal of N-Heterocyclic Aromatic Contaminants from Fuels by Lewis Acidic Metal-Organic Frameworks". Angewandte Chemie-International Edition 50 18 (2011): 4210-4214.
    10.1002/anie.201100050
  120. Sreeprasanth Pulinthanathu Sree; Jolien Dendooven; Dries Smeets; Davy Deduytsche; Alexander Aerts; Kris Vanstreels; Mikhail R Baklanov; et al. "Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabs". Journal of Materials Chemistry 21 21 (2011): 7692-7699.
    10.1039/c1jm10270b
  121. Lino Pereira; U. Wahl; Stefan S. Decoster; J G Correia; lmarina Pinto de Almeida Amorim; M R da Silva; J P Araujo; André Vantomme. "Mixed Zn and O substitution of Co and Mn in ZnO". Physical Review B 84 12 (2011): 125204-125204.
    10.1103/PhysRevB.84.125204
  122. Claudia Fleischmann; S Sioncke; Sebastien Couet; Koen Schouteden; B Beckhoff; M Mueller; P Hoenicke; et al. "Towards Passivation of Ge(100) Surfaces by Sulfur Adsorption from a (NH4)(2)S Solution: A Combined NEXAFS, STM and LEED Study". Journal Of The Electrochemical Society 158 5 (2011):
    10.1149/1.3566846
  123. M Rennhofer; M Kozlowski; Bart Laenens; B Sepiol; R Kozubski; Dries Smeets; André Vantomme. "Study of reorientation processes in L1(0)-ordered FePt thin films". Intermetallics 18 11 (2010): 2069-2076.
    10.1016/j.intermet.2010.06.011
  124. Stefan Decoster; Stefaan Cottenier; U. Wahl; J G Correia; Lino Pereira; C Lacasta; M R Da Silva; André Vantomme. "Diluted manganese on the bond-centered site in germanium". Applied Physics Letters 97 15 (2010):
    10.1063/1.3501123
  125. Maarten Cannaerts; Alexandre Volodine; Christian Van Haesendonck; Oxana Chamirian; Karen Maex; Dries Smeets; André Vantomme. "Direct observation of preferential heating near grain boundaries in patterned silicide films". Journal Of Applied Physics 108 6 (2010): 1-4.
    10.1063/1.3475506
  126. Sebastien Couet; M Sternik; B Laenens; A Siegel; K Parlinski; N Planckaert; F Groestlinger; et al. "Anisotropic lattice dynamics of FePt L1(0) thin films". Physical Review B 82 9 (2010):
    10.1103/PhysRevB.82.094109
  127. B Laenens; N Planckaert; Joost Demeter; Maarten Trekels; C L'abbe; C Strohm; R Rueffer; et al. "Spin structure in perpendicularly magnetized Fe-FePt bilayers". Physical Review B 82 10 (2010):
    10.1103/PhysRevB.82.104421
  128. Jelle Demeulemeester; Dries Smeets; C M Comrie; C Van Bockstael; W Knaepen; C Detavernier; Kristiaan Temst; André Vantomme. "The influence of Pt redistribution on Ni1-xPtxSi growth properties". Journal Of Applied Physics 108 4 (2010):
    10.1063/1.3455873
  129. Claudia Fleischmann; F Almeida; Joost Demeter; Kristof Paredis; A Teichert; R Steitz; Steven Brems; et al. "The influence of interface roughness on the magnetic properties of exchange biased CoO/Fe thin films". Journal Of Applied Physics 107 11 (2010): 1-7.
    10.1063/1.3391470
  130. Jelle Demeulemeester; Dries Smeets; N P Barradas; A Vieira; C M Comrie; Kristiaan Temst; André Vantomme. "Artificial neural networks for instantaneous analysis of real-time Rutherford backscattering spectra". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 268 10 (2010): 1676-1681.
    10.1016/j.nimb.2010.02.127
  131. Richard Karel Capek; Iwan Moreels; Karel Lambert; David De Muynck; Qiang Zhao; André Vantomme; Frank Vanhaecke; Zeger Hens. "Optical Properties of Zincblende Cadmium Selenide Quantum Dots". Journal Of Physical Chemistry C 114 14 (2010): 6371-6376.
    10.1021/jp1001989
  132. Stefan Decoster; Stefaan Cottenier; U. Wahl; J G Correia; André Vantomme. "Lattice location study of ion implanted Sn and Sn-related defects in Ge". Physical Review B 81 15 (2010): 1-6.
    10.1103/PhysRevB.81.155204
  133. Joost Demeter; J Meersschaut; F Almeida; Steven Brems; Christian Van Haesendonck; A Teichert; R Steitz; Kristiaan Temst; André Vantomme. "Exchange bias by implantation of O ions into Co thin films". Applied Physics Letters 96 13 (2010): 1-3.
    10.1063/1.3377907
  134. C Van Bockstael; Koen De Keyser; Jelle Demeulemeester; André Vantomme; R L Van Meirhaeghe; C Detavernier; J L Jordan-Sweet; C Lavoie. "In situ study of the formation of silicide phases in amorphous Co-Si mixed layers". Microelectronic Engineering 87 3 (2010): 282-285.
    10.1016/j.mee.2009.07.011
  135. W Knaepen; Jelle Demeulemeester; D Deduytsche; J L Jordan-Sweet; André Vantomme; R L Van Meirhaeghe; C Detavernier; C Lavoie. "In situ X-ray diffraction study of thin film Ir/Si solid state reactions". Microelectronic Engineering 87 3 (2010): 258-262.
    10.1016/j.mee.2009.06.002
  136. Christian Romero Vieyra; J I Avila; R A Trabol; Huan Wang; André Vantomme; Margriet J. Van Bael; Peter Lievens; A L Cabrera. "Pd as a promoter to reduce Co cluster films at room temperature". International Journal Of Hydrogen Energy 35 6 (2010): 2262-2267.
    10.1016/j.ijhydene.2010.01.026
  137. I S Roqan; K P O'Donnell; R W Martin; P R Edwards; S F Song; André Vantomme; K Lorenz; E Alves; M Bockowski. "Identification of the prime optical center in GaN:Eu3+". Physical Review B 81 8 (2010): 1-5.
    10.1103/PhysRevB.81.085209
  138. W Knaepen; Jelle Demeulemeester; J Jordan-Sweet; André Vantomme; C Detavernier; R L Van Meirhaeghe; C Lavoie. "In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)". Journal Of Vacuum Science & Technology B 28 1 (2010): 20-26.
    10.1116/1.3259875
  139. N Planckaert; Jelle Demeulemeester; B Laenens; Dirk Smeets; J Meersschaut; C L'abbe; Kristiaan Temst; André Vantomme. "Artificial neural networks applied to the analysis of synchrotron nuclear resonant scattering data". Journal Of Synchrotron Radiation 17 (2010): 86-92.
    10.1107/S0909049509042824
  140. André Vantomme; Bart De Vries; U. Wahl. "Lattice Location of RE Impurities in III-Nitrides". Topics In Applied Physics 124 (2010): 55-98.
    10.1007/978-90-481-2877-8_3
  141. P J Janse van Rensburg; F D Auret; V S Matias; André Vantomme. "Electrical characterization of rare-earth implanted GaN". Physica B-Condensed Matter 404 22 (2009): 4411-4414.
    10.1016/j.physb.2009.09.018
  142. Dries Smeets; G Vanhoyland; J D'Haen; André Vantomme. "On the thermal expansion coefficient of CoSi2 and NiSi2". Journal Of Physics D-Applied Physics 42 23 (2009):
    10.1088/0022-3727/42/23/235402
  143. Kristof Paredis; Dries Smeets; André Vantomme. "The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111)-root 3 x root 3-Au". Nanoscale Research Letters 4 12 (2009): 1447-1451.
    10.1007/s11671-009-9418-3
  144. I S Roqan; K P O'Donnell; R W Martin; C Trager-Cowan; V Matias; André Vantomme; K Lorenz; E Alves; I M Watson. "Optical and structural properties of Eu-implanted InxAl1-xN". Journal Of Applied Physics 106 8 (2009): 1-4.
    10.1063/1.3245386
  145. Iwan Moreels; Karel Lambert; Dries Smeets; David De Muynck; Tom Nollet; Jose C Martins; Frank Vanhaecke; et al. "Size-Dependent Optical Properties of Colloidal PbS Quantum Dots". Acs Nano 3 10 (2009): 3023-3030.
    10.1021/nn900863a
  146. Kristof Paredis; Dries Smeets; André Vantomme. "Diffusion, nucleation and reaction in a three-component system: Fe on Si(111)-'5 x 5'-Cu". New Journal Of Physics 11 093019 (2009):
    10.1088/1367-2630/11/9/093019
  147. M Xu; André Vantomme; Dirk Smeets; Koen Vanormelingen; S D Yao. "Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer". Journal Of Crystal Growth 311 16 (2009): 4007-4010.
    10.1016/j.jcrysgro.2009.06.049
  148. Stefan Decoster; André Vantomme. "Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recovery". Journal Of Physics D-Applied Physics 42 16 (2009):
    10.1088/0022-3727/42/16/165404
  149. S Giangrandi; K Arstila; B Brijs; T Sajavaara; André Vantomme; wilfried vandervorst. "Considerations about multiple and plural scattering in heavy-ion low-energy ERDA". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 267 11 (2009): 1936-1941.
    10.1016/j.nimb.2009.03.105
  150. Ventsislav Valev; M Di Vece; Margriet J. Van Bael; Didier Grandjean; Stefan Decoster; André Vantomme; Thierry Verbiest; Peter Lievens. "Changing the three-dimensional magnetization exchange coupling of mixed Fe and V nanoclusters with hydrogen". Journal Of Applied Physics 105 11 (2009):
    10.1063/1.3133233
  151. Nikie Planckaert; R Callens; Joost Demeter; B Laenens; J Meersschaut; W Sturhahn; S Kharlamova; Kristiaan Temst; André Vantomme. "Mossbauer studies of complex materials: Energy versus time domain". Applied Physics Letters 94 22 (2009):
    10.1063/1.3147185
  152. B Laenens; Nikie Planckaert; M Sternik; P T Jochym; K Parlinski; André Vantomme; J Meersschaut. "Probing the dynamical properties of the metastable bcc FexCo1-x phase". Physical Review B 79 22 (2009):
    10.1103/PhysRevB.79.224303
  153. U. Wahl; B De Vries; S Decoster; André Vantomme; J G Correia. "Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 267 8-9 (2009): 1340-1344. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000266519900033\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/j.nimb.2009.01.043
  154. U. Wahl; Bernard Lammert de Vries; Stefan Decoster; André Vantomme; J G Correia. "Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 267 8 (2009): 1340-1344.
  155. Stefan Decoster; Bernard Lammert de Vries; U. Wahl; J G Correia; André Vantomme. "Lattice location study of implanted In in Ge". Journal Of Applied Physics 105 8 (2009):
    10.1063/1.3110104
  156. B Laenens; F M Almeida; Nikie Planckaert; Kristiaan Temst; J Meersschaut; André Vantomme; C Rentenberger; M Rennhofer; B Sepiol. "Interplay between structural and magnetic properties of L1(0)-FePt(001) thin films directly grown on MgO(001)". Journal Of Applied Physics 105 7 (2009):
    10.1063/1.3093955
  157. Kristof Paredis; Dries Smeets; André Vantomme. "Iron silicide nanostructure formation on Au induced superstructures on Si(111)". Nanotechnology 20 7 (2009):
    10.1088/0957-4484/20/7/075607
  158. Stefan Decoster; Stefaan Cottenier; Bernard Lammert de Vries; H Emmerich; U. Wahl; J G Correia; André Vantomme. "Transition Metal Impurities on the Bond-Centered Site in Germanium". Physical Review Letters 102 6 (2009):
    10.1103/PhysRevLett.102.065502
  159. Jelle Demeulemeester; D Smeets; C Van Bockstael; C Detavernier; C M Comrie; N P Barradas; A Vieira; André Vantomme. "Pt redistribution during Ni(Pt) silicide formation". Applied Physics Letters 93 26 (2008): 1-3.
    10.1063/1.3058719
  160. S Giangrandi; T Sajavaara; B Brijs; K Arstila; André Vantomme; wilfried vandervorst. "Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 266 24 (2008): 5144-5150.
    10.1016/j.nimb.2008.08.018
  161. Dries Smeets; Jelle Demeulemeester; K De Keyser; D Deduytsche; C Detavernier; C M Comrie; C C Theron; C Lavoie; André Vantomme. "Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time". Journal Of Applied Physics 104 9 (2008): 1-11.
    10.1063/1.3013449
  162. Dries Smeets; Jelle Demeulemeester; D Deduytsche; C Detavernier; C M Comrie; C C Theron; C Lavoie; André Vantomme. "Simultaneous real-time x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, and sheet resistance measurements to study thin film growth kinetics by Kissinger plots". Journal Of Applied Physics 104 10 (2008): 1-5.
    10.1063/1.3021110
  163. Nikie Planckaert; C L'abbe; B Croonenborghs; R Callens; Bart Laenens; André Vantomme; J Meersschaut. "Spin dynamics in the spacer of an interlayer-coupled Fe/Fe0.57Si0.43/Fe trilayer probed with nuclear resonant scattering of synchrotron radiation". Physical Review B 78 14 (2008):
    10.1103/PhysRevB.78.144424
  164. G Verschoren; A N Dobrynin; Kristiaan Temst; Roger Silverans; Christian Van Haesendonck; Peter Lievens; B Pipeleers; et al. "Electron scattering in Au films containing Co clusters". Thin Solid Films 516 23 (2008): 8232-8239.
    10.1016/j.tsf.2008.02.055
  165. Stefan Decoster; Bernard Lammert de Vries; U. Wahl; J G Correia; André Vantomme. "Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge". Applied Physics Letters 93 14 (2008):
    10.1063/1.2996280
  166. Qian Sun; Jianteng Wang; Hui Wang; Ruiqin Jin; Desheng Jiang; Jianjun Zhu; Degang Zhao; et al. "High-temperature AlN interlayer for crack-free AlGaN growth on GaN". Journal Of Applied Physics 104 4 (2008): 1-4.
    10.1063/1.2968546
  167. S Mahieu; K Van Aeken; D Depla; Dries Smeets; André Vantomme. "Dependence of the sticking coefficient of sputtered atoms on the target-substrate distance". Journal Of Physics D-Applied Physics 41 15 (2008):
    10.1088/0022-3727/41/15/152005
  168. Marcel Di Vece; Didier Grandjean; Margriet J. Van Bael; C P Romero; X Wang; Stefan Decoster; André Vantomme; Peter Lievens. "Hydrogen-induced ostwald ripening at room temperature in a Pd nanocluster film". Physical Review Letters 100 23 (2008):
    10.1103/PhysRevLett.100.236105
  169. K Wang; R W Martin; D Amabile; P R Edwards; S Hernandez; E Nogales; K P O'Donnell; et al. "Optical energies of AlInN epilayers". Journal Of Applied Physics 103 7 (2008): 1-3.
    10.1063/1.2898533
  170. Dries Smeets; André Vantomme; Katrien De Keyser; C Detavernier; C Lavoie. "The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100)". Journal Of Applied Physics 103 6 (2008):
    10.1063/1.2888554
  171. Kristof Paredis; K Vanormelingen; André Vantomme. "The influence of a Cu buffer layer on the self-assembly of iron silicide nanostructures on Si(111)". Applied Physics Letters 92 4 (2008):
    10.1063/1.2838737
  172. M Xu; André Vantomme; K Vanormelingen; S D Yao. "Growth of oxide-mediated ternary silicide controlled by a Si cap layer by rapid thermal annealing". Physica E-Low-Dimensional Systems & Nanostructures 40 3 (2008): 484-488.
    10.1016/j.physe.2007.07.002
  173. Bart Laenens; F Almeida; André Vantomme; Johan Meersschaut. "Determination of the direction of the c-axis of L1(0) FePt thin films with the Mossbauer spectroscopy". Acta Physica Polonica A 112 6 (2007): 1313-1318.
    10.12693/APhysPolA.112.1313
  174. Simone Giangrandi; B Brijs; T Sajavaara; K Arstila; André Vantomme; wilfried vandervorst. "Time-of-flight telescope for heavy-ion RBS". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 261 1 (2007): 529-533.
  175. Simone Giangrandi; K Arstila; B Brijs; T Sajavaara; André Vantomme; wilfried vandervorst. "Depth resolution optimization for low-energy ERDA". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 261 1 (2007): 512-515.
  176. I Dézsi; Cs Fetzer; I Szücs; B Degroote; André Vantomme; T Kobayashi; A Nakanishi. "Ultrathin Fe layers on Ag (100) surface". Surface Science 601 12 (2007): 2525-2531.
    10.1016/j.susc.2007.04.202
  177. michel houssa; D Nelis; D Hellin; G Pourtois; T Conard; K Paredis; K Vanormelingen; et al. "H2S exposure of a (100)Ge surface: Evidences for a (2x1) electrically passivated surface". Applied Physics Letters 90 22 (2007): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000246909900037\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1063/1.2743385
  178. V F Kozhevnikov; Margriet J. Van Bael; P K Sahoo; Kristiaan Temst; Christian Van Haesendonck; André Vantomme; Joseph Indekeu. "Observation of wetting-like phase transitions in a surface-enhanced type-I superconductor". New Journal Of Physics 9 075 (2007): 1-7.
    10.1088/1367-2630/9/3/075
  179. Annelies Falepin; Stefaan Cottenier; Craig M Comrie; André Vantomme. "Interpreting Mossbauer spectra reflecting an infinite number of sites: An application to Fe1-xSi synthesized by pulsed laser annealing". Physical Review B 74 18 (2006): 1-11.
    10.1103/PhysRevB.74.184108
  180. F D Auret; P J Janse van Rensburg; M Hayes; J M Nel; W E Meyer; Stefan Decoster; V Matias; André Vantomme. "Electrical characterization of defects introduced in n-type Ge during indium implantation". Applied Physics Letters 89 15 (2006):
    10.1063/1.2360922
  181. M Rennhofer; B Sepiol; M Sladecek; D Kmiec; S Stankov; G Vogl; M Kozlowski; et al. "Self-diffusion of iron in L1(0)-ordered FePt thin films". Physical Review B 74 10 (2006): 1-8.
    10.1103/PhysRevB.74.104301
  182. Bart De Vries; André Vantomme; U. Wahl; J G Correia; J P Araujo; W Lojkowski; D Kolesnikov; ISOLDE Collaboration. "Lattice site location and annealing behavior of implanted Ca and Sr in GaN". Journal Of Applied Physics 100 2 (2006): 1-6.
    10.1063/1.2215091
  183. A N Dobrynin; D N Ievlev; Christian Hendrich; Kristiaan Temst; Peter Lievens; U Hörmann; J Verbeeck; G Van Tendeloo; André Vantomme. "Influence of finite size effects on exchange anisotropy in oxidized Co nanocluster assembled films". Physical Review B 73 24 (2006): 1-8.
    10.1103/PhysRevB.73.245416
  184. M F Wu; S Q Zhou; André Vantomme; Y Huang; H Wang; H Yang. "High-precision determination of lattice constants and structural characterization of InN thin films". Journal Of Vacuum Science & Technology A 24 2 (2006): 275-279.
    10.1116/1.2167970
  185. A N Dobrynin; D N Ievlev; G Verschoren; J Swerts; Margriet J. Van Bael; Kristiaan Temst; Peter Lievens; et al. "Atomic-scale modification of hybrid FePt cluster-assembled films". Physical Review B 73 10 (2006): 1-8.
    10.1103/PhysRevB.73.104421
  186. K Vanormelingen; B Degroote; André Vantomme. "Quantitative characterization of the surface morphology using a height difference correlation function". Journal Of Vacuum Science & Technology B 24 2 (2006): 725-729.
    10.1116/1.2180261
  187. A Martin Hoyas; Y Travaly; J Schuhmacher; T Sajavaara; C M Whelan; B Eyckens; O Richard; et al. "The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WN¿Cy films". Journal Of Applied Physics 99 6 (2006): 1-8.
    10.1063/1.2182074
  188. M A Pawlak; A Lauwers; T Janssens; K G Anil; Karl Opsomer; Karen Maex; André Vantomme; Jorge Kittl. "Modulation of the workfunction of Ni fully silicided gates by doping: Dielectric and silicide phase effects". Ieee Electron Device Letters 27 2 (2006): 99-101.
    10.1109/LED.2005.862677
  189. B Pipeleers; S M Hogg; André Vantomme. "Defect accumulation during channeled erbium implantation into GaN". Journal Of Applied Physics 98 12 (2005): 1-6.
    10.1063/1.2143120
  190. I Dezsi; C Fetzer; I Szucs; J Dekoster; André Vantomme; M Caymax. "Stable and metastable iron silicide phases on Si(100)". Surface Science 599 1 (2005): 122-127.
    10.1016/j.susc.2005.09.040
  191. M A Pawlak; T Janssens; A Lauwers; André Vantomme; wilfried vandervorst; Karen Maex; Jorge Kittl. "Mechanisms of arsenic segregation to the Ni2Si/SiO2 interface during Ni2Si formation". Applied Physics Letters 87 18 (2005):
    10.1063/1.2125124
  192. I Dezsi; C Fetzer; M Kiss; S Degroote; André Vantomme. "Site location of Co in beta-FeSi2". Journal Of Applied Physics 98 7 (2005): 1-5.
    10.1063/1.2084309
  193. Koen Vanormelingen; Kristof Paredis; André Vantomme. "Fe-silicide nanostructures on Si(111)-root 3X root 3-Ag". Journal Of Applied Physics 98 2 (2005): 1-5.
    10.1063/1.1968441
  194. A N Dobrynin; D N Ievlev; Kristiaan Temst; Peter Lievens; J Margueritat; J Gonzalo; C N Afonso; et al. "Critical size for exchange bias in ferromagnetic-antiferromagnetic particles". Applied Physics Letters 87 1 (2005): 1-3.
    10.1063/1.1978977
  195. Koen Vanormelingen; Kristof Paredis; André Vantomme. "The influence of surface steps on the formation of Ag-induced reconstructions on Si(111)". Applied Physics Letters 86 16 (2005): 1-3.
    10.1063/1.1906310
  196. S M Hogg; B Pipeleers; André Vantomme; H Bender; O Richard; M Swart. "Dose-dependent precipitate evolution arising during implantation of Er into Si". Journal Of Applied Physics 97 8 (2005): 1-8.
    10.1063/1.1874295
  197. S Q Zhou; André Vantomme; B S Zhang; H Yang; Ming Fang Wu. "Comparison of the properties of GaN grown on complex Si-based structures". Applied Physics Letters 86 8 (2005): 1-3.
    10.1063/1.1868870
  198. Bart Croonenborghs; F M Almeida; C L'abbe; R R Gareev; Michel Rots; André Vantomme; Johannes Meersschaut. "Interlayer coupling across semi-metallic iron monosilicide". Physical Review B 71 2 (2005): 024410-024410.
    10.1103/PhysRevB.71.024410
  199. D Kmiec; B Sepiol; M Sladecek; G Vogl; J Korecki; T Slezak; R Rüffer; K Vanormelingen; André Vantomme. "Diffusion of iron in a near-surface layer of Fe3Si investigated by nuclear resonant scattering of synchrotron radiation". Diffusion and Defect Data A, Defect and Diffusion Forum 237 (2005): 1222-1224.
    10.4028/www.scientific.net/DDF.237-240.1222
  200. G E J Koops; Hugo Pattyn; André Vantomme; S Nauwelaerts; R Venegas. "Extreme lowering of the Debye temperature of Sn nanoclusters embedded in thermally grown SiO2 by low-lying vibrational surface modes". Physical Review B 70 23 (2004): 1-7.
    10.1103/PhysRevB.70.235410
  201. M A Pawlak; Jorge Kittl; O Chamirian; A Veloso; A Lauwers; T Schram; Karen Maex; André Vantomme. "Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies". Microelectronic Engineering 76 1 (2004): 349-353.
  202. M Wojdak; A Braud; J L Doualan; R Moncorge; Bert Pipeleers; André Vantomme; O Briot. "Mutual quenching of Er3+ photolurninescence under two laser excitation in GaN : Er". Superlattices And Microstructures 36 4 (2004): 755-761.
  203. Mohammed Mamor; V Matias; André Vantomme; A Colder; P Marie; P Ruterana. "Defects induced in GaN by europium implantation". Applied Physics Letters 85 12 (2004): 2244-2246.
    10.1063/1.1797563
  204. Bart Croonenborghs; F M Almeida; Stefaan Cottenier; Michel Rots; André Vantomme; Johannes Meersschaut. "Strain analysis in ultrathin silicide layers in Fe/CsCl-(FeSi)-Fe-57/Fe sandwiches". Applied Physics Letters 85 2 (2004): 200-202.
    10.1063/1.1768307
  205. Koen Vanormelingen; B Degroote; Hugo Pattyn; André Vantomme. "Thin film growth using hyperthermal ions: a surface morphology study". Surface Science 561 2 (2004): 147-153.
    10.1016/j.susc.2004.05.117
  206. U. Wahl; J G Correia; A Czermak; S G Jahn; P Jalocha; J G Marques; A Rudge; et al. "Position-sensitive Si pad detectors for electron emission channeling experiments". Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment 524 1-3 (2004): 245-256. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000221679400024\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/j.nima.2003.12.044
  207. A Satta; André Vantomme; J Schuhmacher; C M Whelan; V Sutcliffe; Karen Maex. "Initial growth mechanism of atomic layer deposited TiN". Applied Physics Letters 84 22 (2004): 4571-4573.
    10.1063/1.1760217
  208. U. Wahl; J G Correia; A Czermak; S G Jahn; P Jalocha; J G Marques; A Rudge; et al. "Position-sensitive Si pad detectors for electron emission channeling experiments". Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment 524 1 (2004): 245-256.
  209. Bart De Vries; V Matias; André Vantomme; U. Wahl; E M C Rita; E Alves; A M L Lopes; J G Correia; ISOLDE Collaboration. "Influence of O and C co-implantation on the lattice site of Er in GaN". Applied Physics Letters 84 21 (2004): 4304-4306.
    10.1063/1.1756196
  210. M F Wu; S Q Zhou; S D Yao; Qiang Zhao; André Vantomme; B Van Daele; E Piscopiello; et al. "High precision determination of the elastic strain of InGaN/GaN multiple quantum wells". Journal Of Vacuum Science & Technology B 22 3 (2004): 920-924.
    10.1116/1.1715085
  211. C M Comrie; Annelies Falepin; O Richard; H Bender; André Vantomme. "Metastable iron silicide phase formation by pulsed laser annealing". Journal Of Applied Physics 95 5 (2004): 2365-2370.
    10.1063/1.1644900
  212. E Jedryka; M Wojcik; S Nadolski; Hugo Pattyn; Joris Verheyden; J Dekoster; André Vantomme. "Heat-induced nanocluster formation in codeposited Ag1-xCox thin films: Nuclear magnetic resonance study". Journal Of Applied Physics 95 5 (2004): 2770-2775.
    10.1063/1.1645997
  213. U. Wahl; J G Correia; E Rita; E Alves; J C Soares; Bart De Vries; V Matias; André Vantomme. "Recent emission channeling studies in wide band gap semiconductors". Hyperfine Interactions 159 1 (2004): 363-372.
  214. U. Wahl; E Alves; K Lorenz; J G Correia; T Monteiro; Bart De Vries; André Vantomme; R Vianden. "Lattice location and optical activation of rare earth implanted GaN". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 132-140.
  215. Bart De Vries; U. Wahl; André Vantomme; J G Correia; ISOLDE Collaboration. "Emission channeling experiments from the decay of Gd-149 to Eu-149 in GaN". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 106-110.
  216. Mohammed Mamor; Bert Pipeleers; F D Auret; J Maes; Manus Hayne; Victor Moshchalkov; André Vantomme. "Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 179-183.
  217. T Wojtowicz; V Matias; P Marie; Mohammed Mamor; Bert Pipeleers; P Ruterana; André Vantomme. "Microstructural and electrical characterization of Er and Eu implanted gallium nitride". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 122-125.
  218. J Nord; K Nordlund; Bert Pipeleers; André Vantomme. "Implantation angle dependence of ion irradiation damage in GaN". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 111-113.
  219. A Braud; J L Doualan; R Moncorge; Bert Pipeleers; André Vantomme. "Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN". Materials Science And Engineering B-Advanced Functional Solid-State Materials 105 1 (2003): 101-105.
  220. M A Pawlak; T Schram; Karen Maex; André Vantomme. "Investigation of iridium as a gate electrode for deep sub-micron CMOS technology". Microelectronic Engineering 70 2 (2003): 373-376.
  221. R Labbani; R Halimi; Tahar Laoui; André Vantomme; Bert Pipeleers; Gert Roebben. "Characterization of Si(111) crystals implanted with Sb+ ions and annealed by rapid thermal processing". Materials Science And Engineering B-Advanced Functional Solid-State Materials 102 1 (2003): 390-397.
  222. F R Ding; André Vantomme; W H He; Qiang Zhao; Bert Pipeleers; K Jacobs; I Moerman; Konstantin Iakoubovskii; Guy Adriaenssens. "Zn distribution and location, luminescence measurement after Zn channeled implantation in GaN and RTA annealing". Materials Science In Semiconductor Processing 6 4 (2003): 193-195.
    10.1016/S1369-8001(03)00086-6
  223. E C Passamani; Bart Croonenborghs; Bart Degroote; André Vantomme. "Interface and bulk properties of Fe/Mn sandwich structures". Physical Review B 67 17 (2003): 1-8.
    10.1103/PhysRevB.67.174424
  224. Alessandra Satta; D Shamiryan; M R Baklanov; C M Whelan; Q T Le; G P Beyer; André Vantomme; Karen Maex. "The removal of copper oxides by ethyl alcohol monitored in situ by spectroscopic ellipsometry". Journal Of The Electrochemical Society 150 5 (2003):
    10.1149/1.1564108
  225. F R Ding; W He; André Vantomme; Qiang Zhao; Bert Pipeleers; K Jacobs; I Moerman. "Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS". Materials Science And Engineering B-Advanced Functional Solid-State Materials 98 1 (2003): 70-73.
    10.1016/S0921-5107(02)00600-1
  226. S D Yao; S Q Zhou; Z J Yang; Y H Lu; C C Sun; C Sun; G Y Zhang; et al. "P-type doping of GaN by Mg+ implantation". Chinese Physics Letters 20 1 (2003): 102-104.
    10.1088/0256-307X/20/1/330
  227. Annelies Falepin; Stefaan Cottenier; C M Comrie; O Richard; H Bender; Guido Langouche; André Vantomme. "Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing". Hyperfine Interactions 151 1 (2003): 131-144.
    10.1023/B:HYPE.0000020412.84450.6c
  228. Alessandra Satta; J Schuhmacher; C M Whelan; wilfried vandervorst; S H Brongersma; G P Beyer; Karen Maex; et al. "Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2". Journal Of Applied Physics 92 12 (2002): 7641-7646.
    10.1063/1.1522485
  229. C C Chen; A C Lindgren; S L Zhang; D Z Zhu; André Vantomme. "Different strain relaxation mechanisms in strained Si/Si1-xGex/Si heterostructures by high dose B+ and BF2+ doping". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 198 1 (2002): 57-63.
    10.1016/S0168-583X(02)01491-X
  230. C Fetzer; I Dezsi; André Vantomme; M F Wu; S Jin; H Bender. "Ternary CoxFe(1-x)Si2 and NixFe(1-x)Si2 formed by ion implantation in silicon". Journal Of Applied Physics 92 7 (2002): 3688-3693.
    10.1063/1.1505673
  231. Oxana Chamirian; A Lauwers; C Demeurisse; H Guerault; André Vantomme; Karen Maex. "CoSi2 formation from CoxNi1-x/Ti system". Microelectronic Engineering 64 1 (2002): 173-180.
  232. S D Yao; S Q Zhou; S X Jiao; Z X Meng; Y H Lu; C C Sun; C Sun; et al. "Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam". Surface & Coatings Technology 158 (2002): 412-415.
    10.1016/S0257-8972(02)00263-3
  233. E Kunnen; S Mangin; Victor Moshchalkov; Yvan Bruynseraede; André Vantomme; A Hoser; Kristiaan Temst. "Influence of strain on the anti-ferromagnetic ordering in epitaxial Cr(001) films on MgO". Thin Solid Films 414 2 (2002): 262-269.
    10.1016/S0040-6090(02)00285-7
  234. M F Wu; C C Chen; D Z Zhu; S Q Zhou; André Vantomme; Guido Langouche; B S Zhang; H Yang. "Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling". Applied Physics Letters 80 22 (2002): 4130-4132.
    10.1063/1.1483389
  235. S M Hogg; Bert Pipeleers; André Vantomme; M Swart. "Channeling of low energy heavy ions: Er in Si < 111 >". Applied Physics Letters 80 23 (2002): 4363-4365.
    10.1063/1.1485128
  236. B Degroote; André Vantomme; H Pattyn; K Vanormelingen. "Hyperthermal effects on nucleation and growth during low-energy ion deposition". Physical Review B 65 19 (2002): 1954011-19540111.
  237. B Degroote; André Vantomme; H Pattyn; K Vanormelingen. "Low-energy ion deposition of Co on Ag(001): A molecular dynamics study". Physical Review B 65 19 (2002): 1954021-1954027.
  238. Bart Degroote; André Vantomme; Hugo Pattyn; Koen Vanormelingen. "Hyperthermal effects on nucleation and growth during low-energy ion deposition". Physical Review B 65 19 (2002): 1-11.
    10.1103/PhysRevB.65.195401
  239. Bart Degroote; André Vantomme; Hugo Pattyn; Koen Vanormelingen; M Hou. "Low-energy ion deposition of Co on Ag(001): A molecular dynamics study". Physical Review B 65 19 (2002): 1-7.
    10.1103/PhysRevB.65.195402
  240. S M Hogg; André Vantomme; M F Wu. "Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis". Journal Of Applied Physics 91 6 (2002): 3664-3668.
    10.1063/1.1448408
  241. Annelies Falepin; C M Comrie; Stefaan Cottenier; André Vantomme. "Study of concentration variations in the metastable [CsCl]Fe1-xSi phase". Materials Science And Engineering B-Advanced Functional Solid-State Materials 89 1 (2002): 386-389.
  242. Alessandra Satta; M Baklanov; O Richard; André Vantomme; H Bender; T Conard; Karen Maex; et al. "Enhancement of ALCVD (TM) TiN growth on Si-O-C and alpha-SiC : H films by O-2-based plasma treatments". Microelectronic Engineering 60 1 (2002): 59-69.
  243. F R Ding; W H He; André Vantomme; Qiang Zhao; Bert Pipeleers; K Jacobs; I Moerman. "Lattice expansion induced by Zn channeled implantation in GaN". Materials Science In Semiconductor Processing 5 6 (2002): 511-514.
    10.1016/S1369-8001(02)00070-7
  244. D L Nagy; Laszlo Bottyan; Laszlo Deak; Bart Degroote; J Dekoster; O Leupold; M Major; et al. "Off-specular synchrotron Mossbauer reflectometry: A novel tool for studying the domain structure in antiferromagnetic multilayers". Hyperfine Interactions 141 1 (2002): 459-464.
  245. S D Yao; C Sun; S Q Zhou; C C Sun; Y H Lu; L Huang; André Vantomme; Q Zhao; Guido Langouche. "Modification of surface mechanical properties of polycarbonate by B+ and O+ ions implantation". Acta Metallurgica Sinica 15 (2002): 33-38.
  246. U. Wahl; André Vantomme; Guido Langouche; J G Correia; L Peralta; ISOLDE Collaboration. "Direct evidence for implanted Fe on substitutional Ga sites in GaN". Applied Physics Letters 78 21 (2001): 3217-3219.
    10.1063/1.1372201
  247. K P O'Donnell; R W Martin; C Trager-Cowan; M E White; K Esona; C Deatcher; P G Middleton; et al. "The dependence of the optical energies on InGaN composition". Materials Science And Engineering B-Advanced Functional Solid-State Materials 82 1 (2001): 194-196.
  248. M F Wu; André Vantomme; S Hogg; Guido Langouche; W Van der Stricht; K Jacobs; I Moerman. "Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001)". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 174 1 (2001): 181-186.
    10.1016/S0168-583X(00)00514-0
  249. Annelies Falepin; C M Comrie; André Vantomme; Guido Langouche. "Study of phase formations in epsilon-FeSi layers by pulsed laser annealing". Hyperfine Interactions 134 1 (2001): 153-160.
  250. Bart Degroote; Hugo Pattyn; Stefan Degroote; André Vantomme; J Dekoster; Guido Langouche. "Diffusion-induced step decoration of Co on Ag(001)". Thin Solid Films 380 1 (2000): 111-113.
  251. U. Wahl; André Vantomme; Guido Langouche; J P Araujo; L Peralta; J G Correia; ISOLDE Collaboration. "Lattice location of implanted Cu in highly doped Si". Applied Physics Letters 77 14 (2000): 2142-2144.
    10.1063/1.1314876
  252. U. Wahl; André Vantomme; Guido Langouche; J P Araujo; L Peralta; J G Correia; ISOLDE Collaboration. "Emission channeling studies of Pr in GaN". Journal Of Applied Physics 88 3 (2000): 1319-1324.
    10.1063/1.373820
  253. L Nistor; H Bender; André Vantomme; M F Wu; J Van Landuyt; K P O'Donnell; R Martin; K Jacobs; I Moerman. "Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer". Applied Physics Letters 77 4 (2000): 507-509.
    10.1063/1.127026
  254. M F Wu; S D Yao; André Vantomme; Susan Hogg; Guido Langouche; W Van der Stricht; K Jacobs; et al. "Elastic strain in InGaN and AlGaN layers". Materials Science And Engineering B-Advanced Functional Solid-State Materials 75 2 (2000): 232-235.
  255. G Gladyszewski; Kristiaan Temst; K Mae; R Schad; F Belien; Eddy Kunnen; G Verbanck; et al. "Structure of Ag/Fe superlattices probed at different length scales". Thin Solid Films 366 1 (2000): 51-62.
    10.1016/S0040-6090(00)00888-9
  256. I Dezsi; C Fetzer; M Kiss; Hugo Pattyn; André Vantomme; Guido Langouche. "Metastable phases of cobalt-ironsilicide formed by sequential implantation of Co and Fe in Si (111)". Applied Physics Letters 76 14 (2000): 1917-1919.
    10.1063/1.126211
  257. J E Mahan; André Vantomme. "Trends in sputter yield data in the film deposition regime". Physical Review B 61 12 (2000): 8516-8525.
    10.1103/PhysRevB.61.8516
  258. S Jin; Hugo Bender; Ming Fang Wu; André Vantomme; Guido Langouche. "Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 160 3 (2000): 349-354.
    10.1016/S0168-583X(99)00604-7
  259. U. Wahl; André Vantomme; Guido Langouche; J G Correia; ISOLDE Collaboration. "Lattice location and stability of ion implanted Cu in Si". Physical Review Letters 84 7 (2000): 1495-1498.
    10.1103/PhysRevLett.84.1495
  260. André Vantomme; M F Wu; S Hogg; Guido Langouche; K Jacobs; M E White; K P O'Donneli; et al. "Comparative study of structural properties and photoluminescence in InGaN layers with a high in content". MRS Online Proceedings 595 (2000): w11381-W11386.
    10.1557/PROC-595-F99W11.38
  261. André Vantomme; M de Potter; M Baklanov; K Maex. "Proceedings of the Third European Workshop on Materials for Advanced Metallization - Ostende, Belgium, March 7-10, 1999 - Preface". Microelectronic Engineering 50 1-4 (2000): 5-5. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000085015700001\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
  262. C Trager-Cowan; D McColl; F Sweeney; S T F Grimson; J F Treguer; A Mohammed; P G Middleton; et al. "Probing nitride thin films in 3-dimensions using a variable energy electron beam". MRS Online Proceedings 595 (2000): W5101-W5106.
    10.1557/PROC-595-F99W9.3
  263. André Vantomme; Guido Langouche; J E Mahan; J P Becker. "Growth mechanism and optical properties of semiconducting Mg2Si thin films". Microelectronic Engineering 50 1 (2000): 237-242.
  264. S M Hogg; André Vantomme; M F Wu; Guido Langouche. "Electrical properties of rare earth silicides produced by channeled ion beam synthesis". Microelectronic Engineering 50 1 (2000): 211-215.
  265. André Vantomme; M de Potter; Mikhail Baklanov; Karen Maex. "Proceedings of the Third European Workshop on Materials for Advanced Metallization - Ostende, Belgium, March 7-10, 1999 - Preface". Microelectronic Engineering 50 1 (2000): 5-5.
  266. K P O'Donnell; R W Martin; M E White; Koen Jacobs; Wim Van der Stricht; Piet Demeester; André Vantomme; Ming Fang Wu; J F W Mosselmans. "Optical spectroscopy and composition of GaN". (2000):
  267. Alessandra Satta; Gerald Beyer; Karen Maex; K Elers; S Haukka; André Vantomme. "Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization". (2000):
  268. J Dekoster; S Degroote; J Meersschaut; R Moons; André Vantomme; L Bottyán; L Deák; et al. "Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy". Hyperfine Interactions 120-121 1-8 (1999): 39-48.
  269. J Dekoster; Bart Degroote; Hugo Pattyn; Guido Langouche; André Vantomme; Stefan Degroote. "Step decoration during deposition of Co on Ag(001) by ultralow energy ion beams". Applied Physics Letters 75 7 (1999): 938-940.
    10.1063/1.124560
  270. M F Wu; S D Yao; André Vantomme; S M Hogg; Guido Langouche; J Li; G Y Zhang. "Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction". Journal Of Vacuum Science & Technology B 17 4 (1999): 1502-1506.
    10.1116/1.590780
  271. M F Wu; André Vantomme; S Hogg; H Pattyn; Guido Langouche. "Crystal structure characterization of ion-beam-synthesized CoxY1-xSi1.7 silicide". Journal Of Applied Physics 85 9 (1999): 6929-6931. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000079871200104\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1063/1.370108
  272. André Vantomme; Stefan Degroote; J Dekoster; Guido Langouche; R Pretorius. "Concentration-controlled phase selection of silicide formation during reactive deposition". Applied Physics Letters 74 21 (1999): 3137-3139.
    10.1063/1.124090
  273. M F Wu; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche. "Crystal structure characterization of ion-beam-synthesized CoxY1-xSi1.7 silicide". Journal Of Applied Physics 85 9 (1999): 6929-6931.
  274. R A Donaton; S Jin; H Bender; T Conard; Ingrid De Wolf; K Maex; André Vantomme; Guido Langouche. "New Technique for Forming Continuous, Smooth, and Uniform Ultrathin (3 nm) PtSi Layers". Electrochemical and Solid-State Letters 2 2-4 (1999): 195-197.
  275. R A Donaton; S Jin; H Bender; T Conard; Ingrid De Wolf; Karen Maex; André Vantomme; Guido Langouche. "New technique for forming continuous, smooth, and uniform ultrathin (3 nm) PtSi layers". Electrochemical and Solid-State Letters 2 4 (1999): 195-197.
    10.1149/1.1390781
  276. S M Hogg; André Vantomme; M F Wu; S Yao; H Pattyn; Guido Langouche. "Epitaxial ternary Er0.5Y0.5Si1.7 suicide layers formed by channeled ion beam synthesis". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1-4 (1999): 621-625.
    10.1016/S0168-583X(98)00723-X
  277. J P Araújo; J G Correia; U. Wahl; J G Marques; E Alves; V S Amaral; A A Lourenço; et al. "Stability and diffusion of Hg implanted YBa 2 Cu 3 O 6+x". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1-4 (1999): 807-812.
    10.1016/S0168-583X(98)00836-2
  278. J P Araújo; J G Correia; U. Wahl; J G Marques; E Alves; V S Amaral; A A Lourenço; et al. "Stability studies of Hg implanted YBa2Cu3O6+x". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 147 1-4 (1999): 244-248.
    10.1016/S0168-583X(98)00544-8
  279. André Vantomme; M F Wu; Susan Hogg; U. Wahl; W Deweerd; Hugo Pattyn; Guido Langouche; S Jin; H Bender. "Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 147 1 (1999): 261-266.
  280. J P Araujo; J G Correia; U. Wahl; J G Marques; E Alves; V S Amaral; A A Lourenco; et al. "Stability studies of Hg implanted YBa2Cu3O6+x". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 147 1 (1999): 244-248.
  281. J P Araujo; J G Correia; U. Wahl; J G Marques; E Alves; V S Amaral; A A Lourenco; et al. "Stability and diffusion of Hg implanted YBa2Cu3O6+x". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1 (1999): 807-812.
  282. U. Wahl; André Vantomme; Guido Langouche; ISOLDE Collaboration. "Lattice sites and damage annealing of Er in low-dose implanted GaAs". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1 (1999): 492-496.
  283. M F Wu; André Vantomme; S M Hogg; Guido Langouche; W Van der Stricht; K Jacobs; I Moerman. "Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study". Applied Physics Letters 74 3 (1999): 365-367.
    10.1063/1.123032
  284. S M Hogg; André Vantomme; M F Wu; S D Yao; Hugo Pattyn; Guido Langouche. "Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1 (1999): 621-625.
  285. M Mamor; F D Auret; S A Goodman; J Brink; M Hayes; F Meyer; André Vantomme; Guido Langouche; P N K Deenapanray. "Deep level properties of erbium implanted epitaxially grown SiGe". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 148 1 (1999): 523-527.
  286. U. Wahl; André Vantomme; Guido Langouche; J G Correia. "The influence of oxygen on the lattice sites of rare earths in silicon". Journal Of Luminescence 80 1 (1999): 303-307.
  287. R Pretorius; C C Theron; André Vantomme; J W Mayer. "Compound phase formation in thin film structures". Critical Reviews In Solid State And Materials Sciences 24 1 (1999): 1-62.
    10.1080/10408439991329161
  288. J Dekoster; Stefan Degroote; Johannes Meersschaut; R Moons; André Vantomme; L Bottyan; L Deak; et al. "Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy". Hyperfine Interactions 120 1 (1999): 39-48.
  289. S Jin; H Bender; M F Wu; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche. "Growth of high-quality buried Y- and (Y,Nd)-silicide layers prepared by channelled ion implantation". Journal Of Crystal Growth 194 2 (1998): 189-194.
    10.1016/S0022-0248(98)00715-5
  290. Steven Demuynck; Johannes Meersschaut; J Dekoster; B Swinnen; R Moons; André Vantomme; Stefaan Cottenier; Michel Rots. "Structural and magnetic ordering of chromium in Ag/Cr multilayers". Physical Review Letters 81 12 (1998): 2562-2565.
    10.1103/PhysRevLett.81.2562
  291. M F Wu; S D Yao; André Vantomme; S Hogg; H Pattyn; Guido Langouche; X P Ye; J P Celis. "Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 142 3 (1998): 355-360. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000075034400013\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/S0168-583X(98)00291-2
  292. R Moons; S Blasser; J Dekoster; André Vantomme; J De Wachter; Guido Langouche. "Structural characterization of thin epitaxial Fe films". Thin Solid Films 324 1-2 (1998): 129-133. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:000074746200019\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/S0040-6090(98)00354-X
  293. M F Wu; Shude Yao; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche; Xingpu Ye; Jean-Pierre CELIS. "Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 142 3 (1998): 355-360.
  294. R Moons; S Blasser; J Dekoster; André Vantomme; J De Wachter; Guido Langouche. "Structural characterization of thin epitaxial Fe films". Thin Solid Films 324 1 (1998): 129-133.
  295. M F Wu; S D Yao; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche; Q Q Yang; Q M Wang. "Structural study of YSi1.7 layers formed by channeled ion beam synthesis". Journal Of Vacuum Science & Technology B 16 4 (1998): 1901-1906.
    10.1116/1.590105
  296. I Dezsi; C Fetzer; I Szucs; Guido Langouche; André Vantomme. "Phases of cobalt-iron ternary disilicides". Applied Physics Letters 72 22 (1998): 2826-2828.
    10.1063/1.121470
  297. M F Wu; André Vantomme; Susan Hogg; Hugo Pattyn; Guido Langouche. "Channeled ion beam synthesis of heteroepitaxial Nd0.32Y0.68Si1.7 layers". Applied Physics Letters 72 19 (1998): 2412-2414.
    10.1063/1.121370
  298. R Moons; S Blasser; J Dekoster; André Vantomme; J De Wachter; Guido Langouche. "< 1 0 0 > axial ion channeling in Fe single crystals: Flux related phenomena in the near surface region". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 134 2 (1998): 181-190.
    10.1016/S0168-583X(98)00560-6
  299. Patrick Wagner; Ivan Gordon; André Vantomme; D Dierickx; Margriet J. Van Bael; Victor Moshchalkov; Yvan Bruynseraede. "Carrier density variation in films of Nd0.5Sr0.5MnO3". Epl 41 1 (1998): 49-54.
    10.1209/epl/i1998-00114-3
  300. R A Donaton; S Jin; H Bender; M Zagrebnov; K Baert; Karen Maex; André Vantomme; Guido Langouche. "Formation of ultra-thin PtSi layers with a 2-step silicidation process". Microelectronic Engineering 37 1 (1997): 507-514.
  301. U. Wahl; André Vantomme; J DeWachter; R Moons; Guido Langouche; J G Marques; J G Correia; ISOLDE Collaboration. "Direct evidence for tetrahedral interstitial Er in Si". Physical Review Letters 79 11 (1997): 2069-2072.
    10.1103/PhysRevLett.79.2069
  302. J E Mahan; André Vantomme. "A simplified collisional model of sputtering in the linear cascade regime". Journal Of Vacuum Science & Technology A 15 4 (1997): 1976-1989.
    10.1116/1.580668
  303. L T Vinh; M Eddrief; J E Mahan; André Vantomme; J H Song; M A Nicolet. "The van der Waals epitaxial growth of GaSe on Si(111)". Journal Of Applied Physics 81 11 (1997): 7289-7294.
    10.1063/1.365326
  304. J Dekoster; H Bemelmans; S Degroote; R Moons; Joris Verheyden; André Vantomme; Guido Langouche. "Epitaxial growth of and suicide formation in Fe/FeSi multilayers". Journal Of Applied Physics 81 8 PART 2B (1997): 5349-5351.
  305. J Dekoster; Hilde Bemelmans; Stefan Degroote; R Moons; J Verheyden; André Vantomme; Guido Langouche. "Epitaxial growth of and silicide formation in Fe/FeSi multilayers". Journal Of Applied Physics 81 8 (1997): 5349-5351.
    10.1063/1.364542
  306. S Jin; H Bender; M F Wu; André Vantomme; Hugo Pattyn; Guido Langouche. "Epitaxial growth of Gd silicides prepared by channeled ion implantation". Journal Of Applied Physics 81 7 (1997): 3103-3107.
    10.1063/1.364344
  307. R A Donaton; Karen Maex; André Vantomme; Guido Langouche; Y Morciaux; A StAmour; J C Sturm. "Co silicide formation on SiGeC/Si and SiGe/Si layers". Applied Physics Letters 70 10 (1997): 1266-1268.
    10.1063/1.118548
  308. André Vantomme; J E Mahan; Guido Langouche; J P Becker; Margriet J. Van Bael; Kristiaan Temst; Christian Van Haesendonck. "Thin film growth of semiconducting Mg2Si by codeposition". Applied Physics Letters 70 9 (1997): 1086-1088.
    10.1063/1.118492
  309. Patrick Wagner; V Metlushko; Lieven Trappeniers; André Vantomme; Johan Vanacken; G Kido; Victor Moshchalkov; Yvan Bruynseraede. "Magnetotransport in epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5MnO3". Physical Review B 55 6 (1997): 3699-3707.
    10.1103/PhysRevB.55.3699
  310. Joris Verheyden; S Bukshpan; J Dekoster; André Vantomme; W Deweerd; K Milants; T Barancira; G L Zhang; Hugo Pattyn. "Determination of size and interface hyperfine field of Co nanosized precipitates in Ag by Mossbauer spectroscopy". Epl 37 1 (1997): 25-30.
    10.1209/epl/i1997-00112-5
  311. Patrick Wagner; V Metlushko; Margriet J. Van Bael; R J M Vullers; L Trappeniers; André Vantomme; J Vanacken; et al. "Magnetic transitions and magneto-transport in epitaxial Pr 0.5 Sr 0.5 MnO 3 thin films". European Physical Journal-Special Topics 6 3 (1996): 309-314.
  312. André Vantomme; M F Wu; U. Wahl; J DeWachter; Stefan Degroote; Hugo Pattyn; Guido Langouche; H Bender. "Channeled ion beam synthesis: A new technique for forming high-quality rare-earth silicides". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 120 1 (1996): 190-197.
  313. J E Mahan; André Vantomme; Guido Langouche; J P Becker. "Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy". Physical Review B 54 23 (1996): 16965-16971.
    10.1103/physrevb.54.16965
  314. M F Wu; André Vantomme; Hugo Pattyn; Guido Langouche; Q Q Yang; Q M Wang. "X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis". Journal Of Applied Physics 80 10 (1996): 5713-5717.
    10.1063/1.363623
  315. R L Maltez; L Amaral; M Behar; André Vantomme; Guido Langouche; X W Lin. "Mossbauer study of the magnetic character and ordering process of the cubic gamma-FeSi2 phase obtained by Fe implantation into a Si(100) matrix". Physical Review B 54 16 (1996): 11659-11665.
    10.1103/physrevb.54.11659
  316. K Szymanski; L Dobrzynski; A Andrejczuk; R Chrenowicz; André Vantomme; Stefan Degroote; Guido Langouche. "On the preferential location of Co in beta-FeSi2". Journal Of Physics-Condensed Matter 8 29 (1996): 5317-5324.
    10.1088/0953-8984/8/29/008
  317. M F Wu; André Vantomme; Hugo Pattyn; Guido Langouche; Hugo Bender. "Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by channeled ion-beam synthesis". Applied Physics Letters 68 23 (1996): 3260-3262.
    10.1063/1.116567
  318. M F Wu; André Vantomme; J DeWachter; Stefan Degroote; Hugo Pattyn; Guido Langouche; H Bender. "Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers". Journal Of Applied Physics 79 9 (1996): 6920-6925.
    10.1063/1.361516
  319. Joris Verheyden; G L Zhang; J Dekoster; André Vantomme; W Deweerd; K Milants; T Barancira; Hugo Pattyn. "A Mossbauer study of Co cluster nucleation in Ag". Journal Of Physics D-Applied Physics 29 5 (1996): 1316-1320.
    10.1088/0022-3727/29/5/027
  320. P Wagner; V Metlushko; Margriet J. Van Bael; R J M Vullers; Lieven Trappeniers; André Vantomme; Johan Vanacken; et al. "Magnetic transitions and magneto-transport in epitaxial Pr0.5Sr0.5MnO3 thin films". European Physical Journal-Special Topics 6 (1996): 309-314.
  321. A M VanBavel; Stefan Degroote; André Vantomme; Guido Langouche. "Mossbauer spectroscopy on bent Si crystals". Nuovo Cimento D 18 2 (1996): 293-297.
  322. Michel Rots; André Vantomme; J Dekoster; Romain Coussement; Guido Langouche. "Hyperfine interactions detected by nuclear radiations - Preface". Hyperfine Interactions 97 1 (1996):
  323. M F Wu; André Vantomme; Hugo Pattyn; Guido Langouche. "Importance of channeled implantation to the synthesis of erbium silicide layers". Applied Physics Letters 67 26 (1995): 3886-3888.
    10.1063/1.115306
  324. André Vantomme; M F Wu; Guido Langouche; J Tavares; H Bender. "The formation and thermal stability of ion-beam-synthesized ternary Me(x)Fe(1-x)Si(2) (Me=Co, Ni) in Si(111)". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 106 1 (1995): 404-408.
  325. Stefan Degroote; André Vantomme; J Dekoster; Guido Langouche. "Cubic metastable fesi1-x epitaxially grown on si and mgo substrates". Applied Surface Science 91 1 (1995): 72-76.
  326. André Vantomme; Stefan Degroote; J Dekoster; Guido Langouche. "Epitaxy of cosi2/si(100) - from co/ti/si(100) to reactive deposition epitaxy". Applied Surface Science 91 1 (1995): 24-29.
  327. M F Wu; J Dewachter; A M Van Bavel; R Moons; André Vantomme; Hugo Pattyn; Guido Langouche; et al. "Structural characterization of ion-beam synthesized NiSi2 layers". Journal Of Applied Physics 78 3 (1995): 1707-1712.
    10.1063/1.360268
  328. J Tavares; H Bender; Mf Wu; André Vantomme; Guido Langouche; C Lin. "Ion-beam synthesis of ternary phase cofe-silicide in (111)silicon". Applied Physics Letters 67 7 (1995): 986-988.
    10.1063/1.114967
  329. Rg Long; Jp Becker; Je Mahan; André Vantomme; Ma Nicolet. "Heteroepitaxial relationships for crsi2 thin-films on si(111)". Journal Of Applied Physics 77 7 (1995): 3088-3094.
    10.1063/1.359539
  330. Dyc Lie; Jh Song; André Vantomme; F Eisen; Ma Nicolet; Nd Theodore; Tk Carns; Kl Wang. "Dependence of damage and strain on the temperature of si irradiation in epitaxial ge0.10si0.90 films on si(100)". Journal Of Applied Physics 77 6 (1995): 2329-2338.
    10.1063/1.358755
  331. J Dekoster; Hilde Bemelmans; Stefan Degroote; J Dewachter; E Jedryka; R Moons; André Vantomme; Guido Langouche. "Mossbauer-spectroscopy investigation of body-centered-cubic co in co/fe superlattices prepared with mbe". Hyperfine Interactions 95 1 (1995): 191-198.
  332. J Tavares; H Bender; M F Wu; André Vantomme; Guido Langouche; C Lin. "HREM characterization of ion beans synthesized ternary silicides in (111) silicon". Institute of Physics Conference Series 146 (1995): 533-536.
  333. J Tavares; H Bender; M F Wu; André Vantomme; Guido Langouche; C Lin. "Ion beam synthesis of ternary phase CoFe-silicide in (111) silicon <AUTHGRP>". Applied Physics Letters 67 (1994): 97-97.
  334. Dyc Lie; André Vantomme; F Eisen; T Vreeland; Ma Nicolet; Tk Carns; Kl Wang; B Hollander. "Damage and strain in pseudomorphic vs relaxed gexsi1-x layers on si(100) generated by si ion irradiation". Journal Of Electronic Materials 23 4 (1994): 369-373.
    10.1007/BF02671216
  335. André Vantomme; Ma Nicolet; Rg Long; Je Mahan. "Epitaxial ternary rexmo1-xsi2 thin-films on si(100)". Journal Of Applied Physics 75 8 (1994): 3924-3927.
    10.1063/1.356038
  336. André Vantomme; Ma Nicolet; Nd Theodore. "Epitaxial cosi2 films on si(100) by solid-phase reaction". Journal Of Applied Physics 75 8 (1994): 3882-3891.
    10.1063/1.356033
  337. Dyc Lie; André Vantomme; F Eisen; T Vreeland; Ma Nicolet; Tk Carns; V Arbetengels; Kl Wang. "Damage and strain in epitaxial gexsi1-x films irradiated with si". Journal Of Applied Physics 74 10 (1993): 6039-6045.
    10.1063/1.355219
  338. André Vantomme; Ma Nicolet; G Bai; Db Fraser. "Formation of epitaxial cosi2 on si(100) - role of the annealing ambient". Applied Physics Letters 62 3 (1993): 243-245.
    10.1063/1.108978
  339. André Vantomme; Mf Wu; Guido Langouche. "Single and double buried epitaxial metallic layers in si prepared by ion-implantation". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 63 1 (1992): 130-137.
  340. André Vantomme; Guido Langouche. "Low-temperature ion-beam mixing of co/si systems". Hyperfine Interactions 70 1 (1992): 913-916.
  341. Hélène Vanderstraeten; Yvan Bruynseraede; Mf Wu; André Vantomme; Guido Langouche. "Determination of different orientations in epitaxial silicide layers using x-ray-diffraction". Journal Of Physics D-Applied Physics 24 6 (1991): 937-941.
    10.1088/0022-3727/24/6/019
  342. Mf Wu; André Vantomme; Guido Langouche; Hélène Vanderstraeten; Yvan Bruynseraede. "Strain and orientation in epitaxial cosi2(111) layers formed by ion-implantation". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 54 4 (1991): 444-452.
    10.1016/0168-583X(91)95392-Q
  343. Mf Wu; André Vantomme; Guido Langouche; Karen Maex; Hélène Vanderstraeten; Yvan Bruynseraede. "Antiparallel crystal orientation in cosi2 epitaxial bilayers formed by ion-implantation". Applied Physics Letters 57 19 (1990): 1973-1975.
    10.1063/1.104148
  344. Hilde Bemelmans; M Vanderheyden; André Vantomme; Guido Langouche; I Berkes; M Fahad; Oe Hajjaji; R Hassani; M Massaq. "Local nuclear orientation of i-125 in tin and graphite using defect induced electric-field gradients". Hyperfine Interactions 60 1 (1990): 915-918.
  345. André Vantomme; M F WU; I DEZSI; P Q ZHANG; Guido Langouche. "CO-SILICIDE LAYERS STUDIED BY MOSSBAUER-SPECTROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY". Hyperfine Interactions 57 1-4 (1990): 2133-2139. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:A1990DX91600062\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1007/BF02405776
  346. André Vantomme; Mf Wu; I Dezsi; Pq Zhang; Guido Langouche. "Co-silicide layers studied by mossbauer-spectroscopy and rutherford backscattering spectroscopy". Hyperfine Interactions 57 1 (1990): 2133-2139.
  347. Hélène Vanderstraeten; Yvan Bruynseraede; Mf Wu; André Vantomme; Guido Langouche; Jm Phillips. "Aligned and twinned orientations in epitaxial cosi2 layers". Applied Physics Letters 57 2 (1990): 135-137.
    10.1063/1.104212
  348. Pq Zhang; L Urhahn; I Dezsi; André Vantomme; Guido Langouche. "Silicon and transition metal-silicides implanted with fe-57". Hyperfine Interactions 56 1 (1990): 1667-1670.
  349. André Vantomme; I Dezsi; Guido Langouche. "Comparative-study of fe-57 in cosi2 after direct ion-implantation and after ion-implantation of a radioactive parent". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 48 1 (1990): 461-463.
  350. Mf Wu; André Vantomme; Hugo Pattyn; Guido Langouche; Karen Maex; J Vanhellemont; Johan Vanacken; H Vloeberghs; Yvan Bruynseraede. "Formation of buried and surface cosi2 layers by ion-implantation". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 45 1 (1990): 658-663.
  351. André Vantomme; Mf Wu; I Dezsi; Guido Langouche; Karen Maex; J Vanhellemont. "Formation of buried cosi2 layers by ion-implantation, studied by mossbauer-spectroscopy and rutherford backscattering spectroscopy". Materials Science And Engineering B-Advanced Functional Solid-State Materials 4 1 (1989): 157-161.
  352. M F WU; André Vantomme; H PATTYN; Guido Langouche; K MAEX; J VANHELLEMONT. "FORMATION OF BURIED COSI2 LAYERS BY ION-IMPLANTATION AND THEIR STABILITY AT HIGH-TEMPERATURES". Applied Surface Science 38 1-4 (1989): 217-224. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:A1989AQ73800030\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/0169-4332(89)90541-2
  353. Mf Wu; André Vantomme; Hugo Pattyn; Guido Langouche; Karen Maex; J Vanhellemont. "Formation of buried cosi2 layers by ion-implantation and their stability at high-temperatures". Applied Surface Science 38 1 (1989): 217-224.
  354. André Vantomme; I DEZSI; Guido Langouche. "MOSSBAUER-SPECTROSCOPY STUDY OF EPITAXIAL AND BURIED CO-SI LAYERS". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 39 1-4 (1989): 284-287. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:A1989T863200061\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/0168-583X(89)90788-X
  355. André Vantomme; I Dezsi; Guido Langouche. "Mossbauer-spectroscopy study of epitaxial and buried co-si layers". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 39 1 (1989): 284-287.
  356. Guido Langouche; M Depotter; I Dezsi; Mf Wu; André Vantomme. "Mossbauer-spectroscopy study of the thermal annealing behavior of very low and very high-dose co-implanted si". Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 37 (1989): 438-441.
    10.1016/0168-583X(89)90220-6
  357. André Vantomme; I DEZSI; Guido Langouche. "MOSSBAUER-SPECTROSCOPY AND RUTHERFORD BACKSCATTERING STUDY OF CO-SILICIDE SURFACE-LAYERS ON SI". Hyperfine Interactions 41 1-4 (1988): 725-728. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:A1988N104500070\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1007/BF02400493
  358. André Vantomme; I Dezsi; Guido Langouche. "Mossbauer-spectroscopy and rutherford backscattering study of co-silicide surface-layers on si". Hyperfine Interactions 41 1 (1988): 725-728.
Capítulo de livro
  1. M Yeadon; R Nath; C B Boothroyd; D Z Chi. "Direct observations of the nucleation and growth of NiSi2 on Si (001)". 463-466. 2018.
    10.1201/9781351074636
Livro
  1. Veerle Achten; Jos Berghman; Ruben Boon; Luc Brendonck; Arnold Burms; Erik Buyst; Stephan Claes; et al. Hoe word ik Einstein of Da Vinci? Een inleiding tot wetenschappen vandaag voor de homo universalis van morgen. LannooCampus. 2015.
Relatório
  1. Erik Schokkaert; Bart Raymaekers; Stephan Claes; Leen Decin; Dirk De Geest; Luc De Meester; Hilde Heynen; et al. 2013. Studium generale: voorstel voor een interdisciplinair bachelorvak.
Tese / Dissertação
  1. Vantomme, André. "Local structure of Mn-doped ferromagnetic semiconductors". 2019.
  2. Vantomme, André. "The interplay between phonons and superconductivity in nanoscale Sn superconductors". 2019.
  3. Vantomme, André. "Composite Multiferroics Synthesized by Ion Implantation in Thin Films". 2019.
  4. Vantomme, André. "Interface Phenomena in Magnetic Nanostructures". 2018.
  5. Vantomme, André. "Metastability in Nickel Silicide and Nickel Germanide Thin Film Reactions". 2018.
  6. Vantomme, André. "Structure and magnetism of metastable y-Fe nanoparticles in SrTiO 3". 2017.
  7. Vantomme, André. "Lattice site location of electrical dopant impurities in group-III nitrides". 2016.
  8. Vantomme, André. "Investigation of the structural, chemical and magnetic state of the metal/oxide interface in composite multiferroics". 2016.
  9. Vantomme, André. "Nucleation and diffusion during the reaction of ternary silicide systems". 2013.
  10. Vantomme, André. "Ion-induced nanopatterning of metal surfaces". 2013.
  11. Vantomme, André. "Structural, thermal and superconducting properties of Pb nanoparticles in Si, Al and Cu". 2012.
  12. Vantomme, André. "Exchange bias by ion implantation: From the classical bilayer system to a new induction method.". 2012.
  13. Vantomme, André. "Atomic scale investigation of the oxidation and sulfidation processes of Ge(100) surfaces.". 2011.
  14. Vantomme, André. "Structure and magnetism of transition-metal implanted dilute magnetic semiconductors.". 2011.
  15. Vantomme, André. "Exchange springs and exchange bias studied with nuclear methods.". 2011.
  16. Vantomme, André. "Low-energy Elastic Recoil Detection and Ion Beam Analysis for quantitative elemental profiling of thin films.". 2010.
  17. Vantomme, André. "Elemental diffusion in ternary silicide growth unraveled by in situ real-time Rutherford backscattering spectrometry and artificial neural network analysis.". 2010.
  18. Vantomme, André. "Nuclear Resonant Scattering of Synchrotron Radiation applied to magnetic systems under extreme conditions.". 2009.
  19. Vantomme, André. "Ion implantation in Ge: structural and electrical investigation of the induced lattice damage & study of the lattice location of implanted impurities.". 2009.
  20. Vantomme, André. "Thin Films of FePt studied via Nuclear Probe Techniques.". 2009.
  21. Vantomme, André. "The formation of iron silicide nanostructures on noble metal induced superstructures on Si(111) surfaces.". 2008.
  22. Vantomme, André. "Defect characterization of Europium implanted Gallium Nitride.". 2008.
  23. Vantomme, André. "Ni-silicides as gate electrode materials for scaled CMOS technologies". 2008.
  24. Vantomme, André. "Nucleation, diffusion and texture during growth of CoNi-silicides". 2007.
  25. Vantomme, André. "Oxygen beam interactions during sputter profiling of Si, SiGe and Ge substrates". 2006.
  26. Vantomme, André. "Lattice site location of impurities in group III nitrides using emission channeling.". 2006.
  27. Vantomme, André. "Defect accumulation in erbium implanted gallium nitride.". 2005.

Outros

Outra produção
  1. Investigation of GeSn thin films using Real-Time and RBS channeling techniques at iThemba LABS. 2017. Christopher MTSHALI; Craig COMRIE; André Vantomme; Phillip SECHOGELA; Carlos PINEDA-VARGAS.
  2. Exchange bias revisited: correlation between structure and magnetism in Co-CoO systems made by oxygen implantation in Co thin films. 2015. Enric Menéndez Dalmau; J Demeter; R Steitz; A S Mohd; A Koutsioumpas; E Babcock; S Mattauch; André Vantomme; Kristiaan Temst.
  3. Multistep Biomass Conversion Reactions catalyzed with Sn in a Partially Dealuminated Beta Framework. 2014. Jan Dijkmans; Michiel Dusselier; Bert Sels.
  4. 1. Multistep biomass conversion reactions catalyzed with Sn in a partially dealuminated Beta framework. 2014. Bert Sels; Jan Dijkmans; Dries Gabriëls; Pieter Magusin; Wout Janssens; Eric Breynaert; Christine Eva Antonia Kirschhock; Maarten Trekels; André Vantomme.
  5. Probing nano- and interface magnetism in hybrid systems by nuclear resonant scattering (Invited talk). 2014. Margriet J. Van Bael; Sebastien Couet; Maarten Trekels; Manisha Bisht; Claire Petermann; R Rüffer; André Vantomme; Kristiaan Temst.
  6. Probing the phonon density of states and its effect on superconductivity. 2014. Kelly Houben; Sebastien Couet; Johanna K. Jochum; Daniel Perez Lozano; Manisha M. Bisht; Maarten Trekels; Thomas Picot; et al.
  7. Probe, correlate and understand magnetism, superconductivity, and phonons at the nanoscale (invited talk). 2014. Margriet J. Van Bael; Kristiaan Temst; André Vantomme.
  8. Probing the atomic vibrations in nanostructured tin superconductors with synchrotron light (Oral contribution). 2014. Kelly Houben; Sebastien Couet; Tobias Peissker; Ruben Lieten; Maarten Trekels; Manisha Bisht; Johanna K. Jochum; et al.
  9. Multistep biomass conversion reactions catalyzed with Sn in a partially dealuminated Beta framework. 2014. Bert Sels; Jan Dijkmans; Dries Gabriels; Pieter Magusin; Wout Janssens; Eric Breynaert; Christine Eva Antonia Kirschhock; Maarten Trekels; André Vantomme.
  10. Investigation of superconductor/magnet hybrids and superconductor thin films by isotope-specific scattering methods (invited talk). 2013. Margriet J. Van Bael; Sebastien Couet; Maarten Trekels; Kelly Houben; Claire Petermann; Rudolf Rüffer; Michael Hu; André Vantomme; Kristiaan Temst.
  11. Influence of O ion implantation on the magnetic and structural properties of Co thin films studied by 59Co NMR technique. 2013. P Nawrocki; M Wójcik; E Jedryka; Enric Menéndez Dalmau; André Vantomme; Kristiaan Temst.
  12. Mesoporous semiconductor 3D ordered architectures prepared by nanocasting: (i) oxide diluted magnetic semiconductor and (ii) photoluminiscent antidots. 2013. J Sort; M Guerrero; Enric Menéndez Dalmau; J Fornell; E Rossinyol; M Roldan; O Castell; et al.
  13. Interplay between lattice dynamics and superconductivity in Nb3Sn thin films. 2013. Sebastien Couet; H Peelaers; Maarten Trekels; K Houben; Claire Petermann; M Y Hu; J Y Zhao; et al.
    10.1103/PhysRevB.88.159903
  14. Locally probing the magnetization of hybrid magnet-superconductor systems (invited talk). 2012. Margriet J. Van Bael; Sebastien Couet; Maarten Trekels; Rudolf rüffer; Jo Cuppens; Claire Petermann; André Vantomme; Kristiaan Temst.
  15. Magnetization reversal in O-implanted Co thin films. 2012. T Dias; J Geshev; Enric Menéndez Dalmau; J Demeter; André Vantomme; Kristiaan Temst.
  16. Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements on exchange bias bilayers with strong magnetocrystalline anisotropy. 2011. J Demeter; Enric Menéndez Dalmau; A Teichert; K Kiefer; D Wallacher; H Ryll; D Paramanik; et al.
  17. Blocking temperature in implantation-induced exchange bias in CoO/Co. 2011. Enric Menéndez Dalmau; J Van Eyken; J Demeter; André Vantomme; Kristiaan Temst.
  18. Pb nanoparticles produced by ion implantation in Si and Al. 2010. Huan Wang; Kristof Paredis; Jo Cuppens; Ellen Biermans; Sara Bals; Kristina Kvashnina; L Fernandez-Ballester; et al.
  19. A novel approach to induce exchange bias in Co thin films. 2010. J Demeter; Enric Menéndez Dalmau; J Meerschaut; F Almeida; S Brems; Chris Van Haesendonck; A Teichert; et al.
  20. Polarized Neutron Reflectometry on exchange bias systems at the HZB V6 reflectometer. 2010. J Demeter; Enric Menéndez Dalmau; A Schrauwen; A Teichert; K Kiefer; H Ryll; D Wallacher; et al.
  21. Hydrogen detection with TOF-ERDA on 2 MV accelerator. 2006. Kai Arstila; Bert Brijs; Simone Giangrandi; T Sajavaara; wilfried vandervorst; André Vantomme.
  22. Routine analysis of IBA data with Monte Carlo simulations. 2006. Kai Arstila; Simone Giangrandi; Bert Brijs; wilfried vandervorst; André Vantomme.
  23. Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface. 2005. Malgorzata Kmieciak; Jorge Kittl; Tom Janssens; Anne Lauwers; wilfried vandervorst; Anil Kottantharayil; Tom Schram; et al.
  24. Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis. 2005. Simone Giangrandi; Bert Brijs; Timo Pekka Sajavaara; Hugo Bender; Francesca Iacopi; André Vantomme; wilfried vandervorst.
  25. Growth and characterization of atomic layer deposited WCxNy. 2005. Ana Martin Hoyas; Youssef Travaly; Jorg Schuhmacher; Timo Pekka Sajavaara; Caroline Whelan; Brenda Eyckens; Olivier Richard; et al.
  26. The analysis of a thin SiO2/SixN1-x/SiO2 stack, a comparative study of low energy ERD with XPS, low energy SIMS, HRBS, HR-ERD. 2005. Bert Brijs; Simone Giangrandi; K Arstila; A Bergmaier; K Kimura; Thierry Conard; wilfried vandervorst; André Vantomme.
  27. Characterization of the growth of atomic layer deposited WNxCy films on various substrates. 2005. Ana Martin Hoyas; Youssef Travaly; Jorg Schuhmacher; Timo Pekka Sajavaara; Caroline Whelan; Brenda Eyckens; Olivier Richard; et al.
  28. Analysis of thin high-k and silicide films by means of heavy ion forward TOF-RBS. 2005. Timo Pekka Sajavaara; Bert Brijs; Simone Giangrandi; K Arstila; Marleen Van Hove; Youssef Travaly; André Vantomme; wilfried vandervorst.
  29. ARIBA: a combined analysis set-up for high resolution RBS and TOF-ERDA for thin film analysis. 2004. Timo Pekka Sajavaara; Bert Brijs; Simone Giangrandi; Kai Arstila; André Vantomme; wilfried vandervorst.
  30. Grain size and orientation in ternary Co1-xNixSi2 thin films on Si(100): Influence of the Ni content. 2004. Dries Smeets; C Detavernier; Hugo Bender; André Vantomme.
  31. A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates. 2002. Alessandra Satta; Jörg Schuhmacher; Caroline Whelan; wilfried vandervorst; Sywert Brongersma; Gerald Beyer; Bert Brijs; et al.
  32. Quantification and depth profiling of a ZrO2 (2nm)/A1203 (1nm) layer with NRA, RBS, HRBS, HERD. 2001. Bert Brijs; Cedric Huyghebaert; Sophie Nauwelaerts; Matty Caymax; wilfried vandervorst; K Nakajima; K Kimura; et al.
  33. Photoluminescence mapping and Rutherford backscattering of InGaN epilayers. 1999. K P O'Donnell; M E White; S Pereira; Ming Fang Wu; André Vantomme; Wim Van der Stricht; Koen Jacobs.
    10.1002/(SICI)1521-3951(199911)216:1<171::AID-PSSB171>3.0.CO;2-#
  34. Optical spectroscopy and composition of InGaN. 1999. K P O'Donnell; R W Martin; M E White; Koen Jacobs; Wim Van der Stricht; Piet Demeester; André Vantomme; Ming Fang Wu; J F Mosselmans.
  35. Direct determination of the composition and elastic strain in InGaN and AlGaN layers. 1999. André Vantomme; Ming Fang Wu; Susan Hogg; Guido Langouche; S Yao; Koen Jacobs; Ingrid Moerman; J Li; G Y Zhang.
  36. Metastable and stable transistion-metal silicide layer formation in Si and SiGe. 1999. I Dézsi; C Fetzer; E Bill; Matty Caymax; Hugo Pattyn; Sven Degroote; Guido Langouche; André Vantomme.
  37. Formation of continuous and ultra-thin PtSi layers for infrared detector applications. 1998. R A Donaton; S Jin; Hugo Bender; Karen Maex; André Vantomme; Guido Langouche.
  38. Backscattering/channeling study of high dose rare-earth implants in Si. 1997. André Vantomme; Ming Fang Wu; U. Wahl; Hugo Pattyn; Hugo Bender; Guido Langouche.
  39. Channeled ion beam synthesis: a new technique to form epitaxial rare-earth silicides with high quality. 1996. Ming Fang Wu; André Vantomme; Hugo Pattyn; H Langouche; Hugo Bender.
  40. Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon. 1996. Hugo Bender; S Jin; Ming Fang Wu; André Vantomme; Hugo Pattyn; H Langouche.
  41. Comparison of Co silicidation on SiGe and SiGeC alloys. 1996. R A Donaton; Karen Maex; André Vantomme; A St. Amour; J C Sturm.
  42. Synthesis of CoxFe1-xSi2 with High-Dose Ion Implantation and Reactive Codeposition Epitaxy. 1994. André Vantomme; Ming Fang Wu; Stefan Degroote; J Dekoster; Guido Langouche; J Tavares; Hugo Bender.
  43. MOSSBAUER STUDY OF METALLIC LAYERS BY ION-IMPLANTATION OF CO IN SI. 1989. André Vantomme; M F WU; I DEZSI; Guido Langouche. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2\&SrcApp=PARTNER_APP\&SrcAuth=LinksAMR\&KeyUT=WOS:A1989AQ73800031\&DestLinkType=FullRecord\&DestApp=ALL_WOS\&UsrCustomerID=ef845e08c439e550330acc77c7d2d848.
    10.1016/0169-4332(89)90542-4
  44. Mossbauer study of metallic layers by ion-implantation of co in si. 1989. André Vantomme; Mf Wu; I Dezsi; Guido Langouche.