| Outra produção |
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers. In this work,
we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350
°C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry
measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2
thin layers with. 2017. Vieira, E. M. F.; Toudert, J.; Rolo, Anabela G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco,
N.; et al. http://hdl.handle.net/1822/49067.
10.1088/1361-6528/aa7a50
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers. In this work,
we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350
°C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry
measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2
thin layers with. 2017. Vieira, E. M. F.; Toudert, J.; Rolo, Anabela G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco,
N.; et al. http://hdl.handle.net/1822/49067.
10.1088/1361-6528/aa7a50
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers. In this work,
we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350
°C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry
measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2
thin layers with. 2017. Vieira, E. M. F.; Toudert, J.; Rolo, Anabela G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco,
N.; et al. http://hdl.handle.net/1822/49067.
10.1088/1361-6528/aa7a50
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers. In this work,
we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350
°C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry
measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2
thin layers with. 2017. Vieira, E. M. F.; Toudert, J.; Rolo, Anabela G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco,
N.; et al. http://hdl.handle.net/1822/49067.
10.1088/1361-6528/aa7a50
- Structural, optical and magnetic properties of pulsed laser deposited Co-doped ZnO films. Zn1-xCoxO films with different Co
concentrations (with x=0.00, 0.10, 0.15, and 0.30) were grown by pulsed laser deposition (PLD) technique. The structural and
optical properties of the films were investigated by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and photoluminescence
(PL). The magnetic properties were measured by conventional magnetometry using a SQUID and simulated b. 2015. Karzazi, O.;
Sekhar, K. C.; El Amiri, A.; Hlil, E. K.; Conde, O.; Levichev, S.; Moreira, J. A.; et al. http://hdl.handle.net/1822/38858.
Karzazi, O., Sekhar, K. C., El Amiri, A., Hlil, E. K., Conde, O., Levichev, S., . . . Gomes, M. J. M. (2015). Structural,
optical and magnetic properties of pulsed laser deposited Co-doped ZnO films. Journal of Magnetism and Magnetic Materials,
395, 28-33
- Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded
in Al2O3 matrix. Zinc oxide (ZnO) nanocrystals (NCs) embedded in alumina (Al2O3) matrix were produced via rapid thermal annealing
(RTA) of pulsed laser deposited ZnO/Al2O3 multilayered nanostructures. The effect of the thickness ratio (R) between Al2O3
and ZnO in one bi-layer on the microstructure and functional properties of NCs has been investigated. Grazing incidence small
angle X-ray scattering confirmed the f. 2014. Sekhar, K. C.; Levichev, S.; Buljan, M.; Bernstorff, S.; Kamakshi, Koppole;
Chahboun, Adil; Almeida, A.; et al. http://hdl.handle.net/1822/33638.
Sekhar, K. C., Levichev, S., Buljan, M., Bernstorff, S., Kamakshi, K., Chahboun, A., . . . Gomes, M. J. M. (2014). Effect
of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3
matrix.
- Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded
in Al2O3 matrix. Zinc oxide (ZnO) nanocrystals (NCs) embedded in alumina (Al2O3) matrix were produced via rapid thermal annealing
(RTA) of pulsed laser deposited ZnO/Al2O3 multilayered nanostructures. The effect of the thickness ratio (R) between Al2O3
and ZnO in one bi-layer on the microstructure and functional properties of NCs has been investigated. Grazing incidence small
angle X-ray scattering confirmed the f. 2014. Sekhar, K. C.; Levichev, S.; Buljan, M.; Bernstorff, S.; Kamakshi, Koppole;
Chahboun, Adil; Almeida, A.; et al. http://hdl.handle.net/1822/33638.
Sekhar, K. C., Levichev, S., Buljan, M., Bernstorff, S., Kamakshi, K., Chahboun, A., . . . Gomes, M. J. M. (2014). Effect
of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3
matrix.
- Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded
in Al2O3 matrix. Zinc oxide (ZnO) nanocrystals (NCs) embedded in alumina (Al2O3) matrix were produced via rapid thermal annealing
(RTA) of pulsed laser deposited ZnO/Al2O3 multilayered nanostructures. The effect of the thickness ratio (R) between Al2O3
and ZnO in one bi-layer on the microstructure and functional properties of NCs has been investigated. Grazing incidence small
angle X-ray scattering confirmed the f. 2014. Sekhar, K. C.; Levichev, S.; Buljan, M.; Bernstorff, S.; Kamakshi, Koppole;
Chahboun, Adil; Almeida, A.; et al. http://hdl.handle.net/1822/33638.
Sekhar, K. C., Levichev, S., Buljan, M., Bernstorff, S., Kamakshi, K., Chahboun, A., . . . Gomes, M. J. M. (2014). Effect
of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3
matrix.
- IBA study of SiGe/SiO2 nanostructured multilayers. SiGe/SiO2 multilayers with layer thickness of 5 nm were deposited with
RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were
made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering
and elastic recoil analysis detection techniques, in order to determine the thi. 2014. Barradas, N. P.; Alves, E.; Vieira,
E. M. F.; Parisini, A.; Conde, O.; Martín-Sánchez, J.; Rolo, Anabela G.; Chahboun, A.; Gomes, M. J. M.. http://hdl.handle.net/1822/33632.
10.1016/j.nimb.2013.11.025
- Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded
in Al2O3 matrix. Zinc oxide (ZnO) nanocrystals (NCs) embedded in alumina (Al2O3) matrix were produced via rapid thermal annealing
(RTA) of pulsed laser deposited ZnO/Al2O3 multilayered nanostructures. The effect of the thickness ratio (R) between Al2O3
and ZnO in one bi-layer on the microstructure and functional properties of NCs has been investigated. Grazing incidence small
angle X-ray scattering confirmed the f. 2014. Sekhar, K. C.; Levichev, S.; Buljan, M.; Bernstorff, S.; Kamakshi, Koppole;
Chahboun, Adil; Almeida, A.; et al. http://hdl.handle.net/1822/33638.
Sekhar, K. C., Levichev, S., Buljan, M., Bernstorff, S., Kamakshi, K., Chahboun, A., . . . Gomes, M. J. M. (2014). Effect
of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3
matrix.
- Influence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3
layers: structural and photoluminescence properties. In this work, we investigate the structural and photoluminescence (PL)
properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were
prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation
of small SiGe nanocrystals (NCs) (~3 to 5 nm) embedded between ultra-thin (~6 nm thi. 2013. Vieira, E. M. F.; Martín-Sánchez,
J.; Roldan, M. A.; Varela, M.; Buljan, M.; Bernstorff, S.; Barradas, N. P.; et al. http://hdl.handle.net/1822/33981.
10.1088/0022-3727/46/38/385301
- Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers. In this paper, we report on the electrical
properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe)
embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ºC). Capacitance–voltage measurements
show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping capabi. 2013. Vieira,
E. M. F.; Diaz, Regis; Grisolia, Jeremie; Parisini, Andrea; Martín-Sánchez, J.; Levichev, S.; Rolo, Anabela G.; Chahboun,
A.; Gomes, M. J. M.. http://hdl.handle.net/1822/23575.
10.1088/0022-3727/46/9/095306
- Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix. The charge storage behavior
of nanostructures based on Si1-xGex (0 = x = 1) nanocrystals (NCs) in an Al2O3 matrix was investigated. The structures have
been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 ºC to 1000 ºC for 30 min
in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly
de. 2013. Vieira, E. M. F.; Levichev, S.; Dias, Carlos J.; Igreja, Rui; Buljan, M.; Bernstorff, S.; Conde, Olinda; et al.
http://hdl.handle.net/1822/25063.
10.1140/epjb/e2013-40124-2
- Effect of rapid thermal annealing on texture and properties of pulsed laser deposited zinc oxide thin films. A comparative
study on the properties of pulsed laser deposited ZnO thin films as a function of rapid thermal annealing temperature (Ta)
is presented. Grazing incidence x-ray diffraction pattern reveals that preferred orientation of the films changes from (002)
to (103) as Ta varies from 500 to 800 1C. A clear correlation between grain morphology and texture formation is noticed. Photoluminescence.
2013. Sekhar, K. C.; Levichev, S.; Kamakshi, Koppole; Doyle, B.; Chahboun, A.; Gomes, M. J. M.. http://hdl.handle.net/1822/33967.
10.1016/j.matlet.2013.02.032
- A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition. In this work, we report
on the production of Ge nanoparticles (NPs) in an inert Ar gas atmo- sphere by pulsed laser deposition (PLD) at room tem-
perature (RT). The direct deposition of energetic par- ticles / droplets resulting from the ablation process of the target
material has been avoided by using an origi- nal and customized o -axis shadow mask (shadowed o - axis) deposition set-up
where the. 2013. Martín-Sánchez, J.; Chahboun, A.; Pinto, S. R. C.; Rolo, Anabela G.; Marques, L.; Serna, R.; Vieira, E. M.
F.; Ramos, Marta M. D.; Gomes, M. J. M.. http://hdl.handle.net/1822/21047.
10.1007/s00339-012-7131-z
- Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition : morphological, structural
and charge trapping properties. In this work, a novel customized shadowed off-axis deposition set-up is used to perform an
original study of Ge nanoparticles (NPs) formation in an inert Ar gas atmosphere by pulsed laser deposition at room temperature
varying systematically the background Ar gas pressure (Pbase(Ar)), target–substrate distance (d) and laser repetition rate
(f). The influence of these parameters on the final NPs si. 2013. Martín-Sánchez, J.; Capan, I.; Chahboun, A.; Pinto, S. R.
C.; Vieira, E. M. F.; Rolo, Anabela G.; Gomes, M. J. M.. http://hdl.handle.net/1822/24681.
10.1016/j.apsusc.2013.04.170
- In¿uence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3
layers: structural and photoluminescence properties. In this work, we investigate the structural and photoluminescence (PL)
properties of (SiGe+Al2O3)/Al2O3 multi-layer ¿lms with layer thicknesses in the range of a few nanometres. The ¿lms were prepared
by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small
SiGe nanocrystals (NCs) (~ 3 to 5 nm) embedded between ultra-thin (~ 6 nm thi. 2013. Vieira, E. M. F.; Martín-Sánchez, J.;
Roldan, M. A.; Varela, M.; Buljan, Maja; Bernstorff, Sigrid; Barradas, Nuno P.; et al. http://hdl.handle.net/1822/27466.
- Structural study of formation of Mn-Doped ZnO nanocrystals embedded in alumina matrix from ZnMnO/Al2O3 multilayer nanostructures.
In this paper, the study of the formation of ZnMnO nanocrystals (NCs) embedded in an alumina matrix starting from ZnMnO/Al2O3
multilayers grown on a Si substrate by pulsed laser deposition with subsequent annealing is presented. The correlation between
the morphology of grown NCs with the ratio R of the thickness of the ZnMnO layer to that of the Al2O3 layer in the as-grown
multilayer structure wa. 2012. Levichev, Sergey Borisovitch; Khodorov, Anatoli Anatolievich; Karzazi, Ouiame; Vorobiev, Alexei;
Chahboun, Adil; Konovalov, Oleg; Gomes, M. J. M.. http://hdl.handle.net/1822/43585.
10.1143/APEX.5.041101
- Effect of oxygen pressure on the structural and magnetic properties of thin Zn0.98Mn0.02O films. Thin Zn0.98Mn0.02O films
were grown by pulsed laser deposition on glass substrates under oxygen pressure. The structural properties were studied by
X-ray diffraction and Raman techniques, while the conductivity was characterized by the Hall effect. The oxygen pressure during
the growth seems to govern the structural and the electrical properties of the thin Zn0.98Mn0.02 films. In fact, the micron.
2012. Khodorov, Anatoli Anatolievich; Rolo, Anabela G.; Hlil, E. K.; Campos, J. Ayres de; Karzazi, O.; Levichev, S.; Correia,
M. R.; Chahboun, A.; Gomes, M. J. M.. http://hdl.handle.net/1822/17178.
10.1051/epjap/2011110380
- Carrier storage in Ge nanoparticles produced by pulsed laser deposition. In this work, we report on the electrical characterization
of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using
a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between
thin alumina films can be obtained on p-type Si(100) substrates following a low temperature. 2012. Martín-Sánchez, J.; Chahboun,
A.; Gomes, M. J. M.; Rolo, Anabela G.; Pivac, B.; Capan, I.. http://hdl.handle.net/1822/18853.
10.1002/pssr.201206104
- Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions. In this work,
we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature
magnetron sputtering deposition of (GeþSiO2)/SiO2 multilayers. The dependence of quantum dot shape, size, separation, and
arrangement type on the Ge-rich (GeþSiO2) layer thickness is studied. We show that the quantum dots are elongated along the
growth direction. 2012. Pinto, S. R. C.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Bernstorff, S.; Varela, M.; Pennycook, S.
J.; et al. http://hdl.handle.net/1822/19316.
10.1063/1.3702776
- Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice. In
this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated
by conventional RF-magnetron sputtering at 350ºC. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation
and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing
temperature of 80. 2012. Vieira, E. M. F.; Martín-Sánchez, J.; Rolo, Anabela G.; Parisini, Andrea; Buljan, Maja; Capan, I.;
Alves, Eduardo; et al. http://hdl.handle.net/1822/19784.
10.1063/1.4722278
- Influence of annealing conditions on formation of regular lattices of voids and Ge quantum dots in amorphous alumina matrix.
In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous
Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly
ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption
from the film and the regu. 2012. Pinto, S. R. C.; Buljan, Maja; Marques, L.; Martín-Sánchez, J.; Chahboun, A.; Barradas,
N. P.; Alves, E.; et al. http://hdl.handle.net/1822/21042.
10.1088/0957-4484/23/40/405605
- Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition:
structural, morphological, and charge trapping properties. In this work, we report on the synthesis of Ge nanocrystals (NCs)
by pulsed laser deposition (PLD) at room temperature (RT) in an argon atmosphere without any further annealing process. Our
results show that functional thin films of crystalline Ge nanoparticles with spherical shapes can be obtained by PLD directly
on alumina layers deposited on n-doped Si (100) substrates. In addition, we also dem. 2012. Martín-Sánchez, J.; Marques, L.;
Vieira, E. M. F.; Doan, Q. T.; Marchand, A.; El Hdiy, A.; Rolo, Anabela G.; et al. http://hdl.handle.net/1822/18854.
10.1007/s11051-012-0843-3
- Low-temperature fabrication of layered self organized ge clusters by RF-sputtering. In this article, we present an investigation
of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The
structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering,
Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation. 2011. Pinto, S.
R. C.; Rolo, Anabela G.; Buljan, M.; Chahboun, A.; Bernstorff, S.; Barradas, N. P.; Alves, E.; et al. http://hdl.handle.net/1822/15689.
10.1186/1556-276X-6-341
- Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix. Si1-xGex nanocrystals
(NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following
annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray
diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the
growth c. 2011. Vieira, E. M. F.; Pinto, S. R. C.; Levichev, S.; Rolo, Anabela G.; Chahboun, A.; Buljan, M.; Barradas, N.
P.; et al. http://hdl.handle.net/1822/14310.
10.1016/j.mee.2010.10.016
- Study of the substitution effect of Mn doped in ZnO matrix. Zn(1-x)Mn(x)O (x = 0.01, 0.02, 0.05, 0.1, and 0.15) powders were
prepared by solid-state reaction processes. The structural and magnetic properties of the powders were investigated. X-ray
diffraction (XRD) analysis of the samples indicates the presence of wurtzite crystal structure similar to pure ZnO and absence
of any other secondary phase till 5% Mn doping. This suggests that doped Mn(2+) ions. 2010. Karzazi, O.; Chahboun, A.; Rolo,
Anabela G.; Hlil, E. K.; Benzakour, N.; Bouslykhane, K.; Hourmatallah, A.; et al. http://hdl.handle.net/1822/18490.
10.1051/epjap/2010056
- Mn-doped ZnO nanocrystals embedded in Al2O3: structural and electrical properties. We report on the structural and electrical
properties of Mn-doped ZnO/Al2O3 nanostructures produced by the pulsed laser deposition technique. Grazing incidence small
angle x-ray scattering (GISAXS) and Rutherford backscattering spectrometry revealed the multilayered structure in as-deposited
samples. Annealing of the nanostructures was shown to promote the formation of nanocrystals embedded in the. 2010. Khodorov,
Anatoli Anatolievich; Levichev, S.; Rolo, Anabela G.; Karzazi, O.; Chahboun, A.; Novak, J.; Vorobiev, A.; et al. http://hdl.handle.net/1822/17082.
10.1088/0957-4484/21/50/505705
- Structural study of Si1-xGex nanocrystals embedded in SiO2 films. We have investigated the structural properties of Si1-xGex
nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters
on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing
incidence small angle X-ray scattering, and high resolution transmission electron microscopy. 2010. Pinto, S. R. C.; Kashtiban,
R. J.; Rolo, Anabela G.; Buljan, M.; Chahboun, A.; Bangert, U.; Barradas, N. P.; Alves, E.; Gomes, M. J. M.. http://hdl.handle.net/1822/13730.
10.1016/j.tsf.2009.09.148
- Post growing annealing effect on the optical, electrical and structural properties of CdSe nanocrystals embedded in silica
thin films. In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique
was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature
photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400
degrees C Evaporation of Se at h. 2009. Levichev, S.; Chahboun, A.; Rolo, Anabela G.; Conde, O.; Gomes, M. J. M.. http://hdl.handle.net/1822/17084.
10.1016/j.tsf.2008.11.063
- Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix. In this work, CdSe nanocrystals
(NCs) embedded in SiO(2) matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise
the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature
dependence of the photoluminescence from the CdSe/SiO(2) System showed carriers thermal exchange between the NCs and. 2009.
Chahboun, A.; Levichev, S.; Rolo, Anabela G.; Conde, O.; Gomes, M. J. M.. http://hdl.handle.net/1822/17184.
10.1016/j.jlumin.2009.06.007
- Annealing effect on the photoluminescence of ge-doped silica films. SiO2 thin films doped with Ge nanocrystals (NCs) were
grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of
Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed
an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix in. 2008. Rolo, Anabela G.;
Chahboun, A.; Conde, O.; Vasilevskiy, Mikhail; Gomes, M. J. M.. http://hdl.handle.net/1822/16959.
10.1016/j.physe.2007.09.144
- Structural and optical properties of Ge nanocrystals embedded in Al2O3. Ge nanocrystals (NCs) embedded in aluminum oxide were
grown by RF-magnetron sputtering. Raman, high resolution transmission electron microscopy (HRTEM), selected area diffraction
(SAD), and X-ray diffraction (XRD) techniques confirmed good cristallinity of the NCs from samples annealed at 800 °C. The
average NC size was estimated to be around 7 nm. Photoluminescence (PL) measurements show an emiss. 2008. Caldelas, P.; Rolo,
Anabela G.; Chahboun, A.; Foss, S.; Levichev, S.; Finstad, T. G.; Gomes, M. J. M.; Conde, O.. http://hdl.handle.net/1822/18491.
10.1166/jnn.2008.A186
- Confinement effect in CdTe nanocrystals embedded in silica thin films. In this paper we report on the optical and structural
properties of CdTe nanoparticles embedded in silica matrix grown by the radio-frequency (RF) magnetron sputtering technique
with subsequent annealing in vacuum. Optical transmittance, Raman scattering, X-ray photoelectron spectroscopy (XPS), grazing
incidence X-ray diffraction (GIXRD) and photoluminescence (PL) were used to study the grown samp. 2008. Levichev, S.; Rolo,
Anabela G.; Chahboun, A.; Conde, O.; Kovalev, A. I.; Wainstein, D. L.; Gomes, M. J. M.. http://hdl.handle.net/1822/18489.
10.1002/pssa.200778134
- Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering. Charging effects in CdSe
nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by
means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated
by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport
in th. 2008. Levichev, S.; Chahboun, A.; Basa, P.; Rolo, Anabela G.; Barradas, N. P.; Alves, E.; Horvath, Zs. J.; Conde, O.;
Gomes, M. J. M.. http://hdl.handle.net/1822/16468.
10.1016/j.mee.2008.09.003
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