Katharina Lorenz (E910-E432-2AB6)

Curriculum Vitae

Katharina Lorenz

Katharina Lorenz (PhD in Physics 2002, University of Bonn, Germany) is Coordinating Researcher at Instituto Superior Tecnico (IST), University of Lisbon and since 2023 she is the President of the Department of Nuclear Sciences and Engineering. She is Director of the Laboratory of Accelerators of IST. She leads the group of Wide Bandgap Semiconductors of INESC Microsystems and Nanotechnologies (INESC MN). She teaches at the Physics Department of IST and is collaborator of the Institute for Plasmas and Fusion (IPFN) of IST. Published >250 journal articles and 3 book chapters. Organized 13 conferences or workshops. Delivered >60 invited talks at scientific events. Supervised or co-supervised 7 PhD theses and 18 MSc dissertations. Has received 4 awards and/or honors. Participates and/or participated as Principal Investigator in 17 projects and as Researcher in 18 projects. Works in the areas of Exact Sciences / Physical Sciences with emphasis on wide bandgap semiconductors and devices, nanotechnology, ion beam analysis and ion beam modification as well as radiation effects in materials and devices. She has been member of the Board of the European Nuclear Education Network (since 2023), member of the Executive Committee of the European Physical Society (since 2023), member of the Directive Board of the Portuguese Physical Society (SPF) as treasurer (2019-2022), member of the coordination committee of the Nuclear Physics section (since 2017) and she is Mentor of the EPS Young Minds Section Lisbon. She is Editor of the Elsevier journal Nuclear Instruments and Methods in Physics research, Section B: Beam Interactions with materials and Atoms (since 2024).

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Identificação

Identificação pessoal

Nome completo: Katharina Lorenz

Nomes de citação

Lorenz, Katharina
K. Lorenz

Identificadores de autor

Ciência ID: E910-E432-2AB6
ORCID iD: 0000-0001-5546-6922
Researcher Id: F-3513-2010

Domínios de atuação

Ciências Exatas - Física

Idiomas

Idioma	Conversação	Leitura	Escrita	Compreensão
Alemão (Idioma materno)
Inglês	Utilizador proficiente (C1)	Utilizador proficiente (C1)	Utilizador proficiente (C1)	Utilizador proficiente (C1)
Francês	Utilizador independente (B1)	Utilizador independente (B1)	Utilizador independente (B1)	Utilizador independente (B1)
Português	Utilizador proficiente (C1)	Utilizador proficiente (C1)	Utilizador proficiente (C1)	Utilizador proficiente (C1)
Russo	Utilizador elementar (A1)	Utilizador elementar (A1)	Utilizador elementar (A1)	Utilizador elementar (A1)

Formação

	Grau	Classificação
2020 Concluído	Engenharia Física Tecnológica (Título de Agregado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2002 Concluído	Physics (Doutoramento) Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha "Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)" (TESE/DISSERTAÇÃO)	Very Good
1998 Concluído	Physics (Mestrado) Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha "Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)" (TESE/DISSERTAÇÃO)	Very Good

Percurso profissional

Ciência

	Categoria Profissional Instituição de acolhimento	Empregador
2021/10/01 - Atual	Investigador Coordenador (carreira) (Investigação)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2018/09/01 - 2021/09/30	Investigador principal (carreira) (Investigação)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2015/07/01 - 2018/08/31	Investigador Auxiliar (carreira) (Investigação)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2013/09/01 - 2015/06/30	Investigador Contratado (Investigação)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2008/03/01 - 2013/02/28	Investigador Contratado (Investigação)	Instituto Tecnológico e Nuclear, Portugal

2002/10/01 - 2008/02/28	Pós-doutorado (Investigação)	Instituto Tecnológico e Nuclear, Portugal

Docência no Ensino Superior

	Categoria Profissional Instituição de acolhimento	Empregador
2013/03/01 - Atual	Leitor (Docente Universitário)	Instituto Superior Técnico Departamento de Física, Portugal
	Instituto Superior Técnico Departamento de Física, Portugal
2014/01/01 - 2017/12/31	Professor Visitante (Docente Universitário)	University of Strathclyde, Reino Unido

Cargos e Funções

	Categoria Profissional Instituição de acolhimento	Empregador
2023/01/04 - Atual	Presidente de Unidade Orgânica	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
2022/01/01 - Atual	Director of the Laboratory of Accelerators and Radiation Technologies (Responsible for the Laboratory of Accelerators) of Campus Tecnológico e Nuclear IST	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2023/01/04 - 2024/12/31	Presidente de Unidade Orgânica	Universidade de Lisboa Instituto Superior Técnico, Portugal
	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal

Outros

	Categoria Profissional Instituição de acolhimento	Empregador
2019/01/01 - Atual	Member of INESC Microsistemas e Nanotecnologias	Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Portugal

2018/01/01 - Atual	Collaborator of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal	Universidade de Lisboa Instituto Superior Técnico, Portugal

2013/01/01 - 2018/12/31	Member of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal	Universidade de Lisboa Instituto Superior Técnico, Portugal

2002/01/01 - 2012/12/31	Member of the Centre for Nuclear Physics of the University of Lisbon (CFNUL), Portugal	Universidade de Lisboa, Portugal

1999/02/01 - 2002/07/31	PhD Student	Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha

1998/07/01 - 1998/12/30	Diploma Student	Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha

1998/01/02 - 1998/06/30	ERASMUS student	Université Claude Bernard Lyon 1 Faculté des Sciences et Technologies, França

Projetos

Bolsa

	Designação	Financiadores
2024/03/01 - 2028/02/29	Research Infrastructure Access in Nanoscience & Nanotechnology (RIANA) Horizon Europe grant agreement nº 101130652 Co-Investigador Responsável (Co-IR)
2022 - 2026	RECYCLABLE MATERIALS DEVELOPMENT at ANALYTICAL RESEARCH INFRASTRUCTURES 101058414 Co-Investigador Responsável (Co-IR)	EU Framework Programme for Research and Innovation Secure Societies
2023/01/02 - 2025/12/31	Ion beam processing of Ga2O3 2022.05329.PTDC Investigador responsável	Fundação para a Ciência e a Tecnologia Em curso
2022/01 - 2024/04	FUll colour Nitride Nanowire light emitting diodes (FUNN-LED) 2021.09198.CBM Investigador responsável
2021/02/01 - 2024/01/31	Defect Engineered 2D Oxide Field Effect Transistors for efficient biosensing PTDC/CTM-CTM/3553/2020 Investigador responsável INESC Microsistemas e Nanotecnologias, Portugal Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2021/01/01 - 2022/12/31	Material’s Research with Radioactive Isotopes and Nuclear Techniques at ISOLDE-CERN CERN/FIS-TEC/0003/2019 Investigador Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Centro de Ciências e Tecnologias Nucleares, Portugal Universidade de Aveiro, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade do Porto Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2019 - 2022	Research And Development with Ion Beams – Advancing Technology in Europe 824096 Investigador	EU Framework Programme for Research and Innovation Science with and for Society Em curso
2020/06/01 - 2021/11/30	Nano-engineering of wide bandgap Semiconductors using Ion Beams (NASIB) LISBOA-01-0145-FEDER-028011 Investigador responsável Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal INESC Microsistemas e Nanotecnologias, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2018/06 - 2021/06	NAno-engineering of wide bandgap Semiconductors using Ion Beams PTDC/CTM-CTM/28011/2017 Investigador responsável	Fundação para a Ciência e a Tecnologia Em curso
2018/07/01 - 2020/12/31	PORTUGAL AT ISOLDE : Materials and Nuclear Physics Research with Radioactive Isotopes and Techniques CERN/FIS-PAR/0005/2017 Investigador	Fundação para a Ciência e a Tecnologia
2015 - 2018	Ion beam modification of advanced wide bandgap semiconductor hetero- and nanostructures IST Start-Up Funds Investigador responsável Universidade de Lisboa Instituto Superior Técnico, Portugal	Universidade de Lisboa Instituto Superior Técnico Concluído
2013/05 - 2015/10	Functionalising wide bandgap semiconductor nanowires using ion beams: Novel materials for nano-light emitters and nano-sensors Provided by PTCRIS: 127772 Investigador responsável	Fundação para a Ciência e a Tecnologia
2013/05 - 2015/09	Bandgap engineering of III-nitride quantum wells for efficient green light emitting diodes Provided by PTCRIS: 125747 Investigador responsável	Fundação para a Ciência e a Tecnologia
2013/01/01 - 2014/12/31	Doping studies of GaN nanowires FCT PESSOA Investigador responsável	Fundação para a Ciência e a Tecnologia Concluído
2012/06 - 2014/12	Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development. Provided by PTCRIS: 123585 Investigador	Fundação para a Ciência e a Tecnologia
2010/02 - 2013/07	Free-charge carrier properties and doping mechanisms of InN-based materials Provided by PTCRIS: 100448 Investigador	Fundação para a Ciência e a Tecnologia
2010/04 - 2013/03	Ion beam modification and neutron irradiation studies of wide bandgap semiconductor hetero- and nanostructures Provided by PTCRIS: 100756 Investigador responsável	Fundação para a Ciência e a Tecnologia
2011/02 - 2012/05	Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development. Provided by PTCRIS: 116320 Investigador	Fundação para a Ciência e a Tecnologia
2011 - 2012	Ion beam modification of novel III-nitride hetero- and nano-structures FCT/DAAD Investigador responsável	Fundação para a Ciência e a Tecnologia
2010/01 - 2010/12	Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE Provided by PTCRIS: 109272 Investigador	Fundação para a Ciência e a Tecnologia
2007/07 - 2010/12	Ternary and quaternary nitride alloys for lattice matched heterostructures: Novel materials for high efficiency field effect transistors and optoelectronic devices Provided by PTCRIS: 65233 Investigador responsável	Fundação para a Ciência e a Tecnologia
2007/01 - 2009/02	Optical doping of AlN and GaN/AlN nanostructures by ion implantation Provided by PTCRIS: 82382 Investigador responsável	Fundação para a Ciência e a Tecnologia
2008 - 2009	Rare Earth doped GaN quantum dots for efficient light emitters FCT PESSOA Investigador responsável	Fundação para a Ciência e a Tecnologia
2007/11 - 2008/10	Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE Provided by PTCRIS: 81921 Investigador	Fundação para a Ciência e a Tecnologia
2005/09 - 2007/12	Perturbed Angular Correlations experiments at the Portuguese Research Reactor Provided by PTCRIS: 58498 Investigador	Fundação para a Ciência e a Tecnologia
2005/07 - 2007/07	Optical doping of AlN and GaN/AlN nanostructures by ion implantation Provided by PTCRIS: 57550 Investigador responsável	Fundação para a Ciência e a Tecnologia
2005 - 2007	Doping of GaN-based nanostructures by ion-implantation FCT/DAAD Investigador responsável	Fundação para a Ciência e a Tecnologia

Projeto

	Designação	Financiadores
2021/01/01 - 2025/12/31	Instituto de Plasmas e Fusão Nuclear LA/P/0061/2020 10.54499/LA/P/0061/2020 UID/FIS/50010/2019 Universidade da Madeira, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Instituto de Plasmas e Fusão Nuclear, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2021/01/01 - 2025/12/31	Institute for Health and Bioeconomy LA/P/0140/2020 10.54499/LA/P/0140/2020 Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal Universidade Nova de Lisboa, Portugal Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal Unidade de Ciências Biomoleculares Aplicadas, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal INESC Microsistemas e Nanotecnologias, Portugal Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2023/01/01 - 2024/12/31	Investigação em Materiais com Isótopos e Técnicas Nucleares Radioativas no ISOLDE-CERN 2021 CERN/FIS-TEC/0003/2021 10.54499/CERN/FIS-TEC/0003/2021 Universidade de Aveiro CICECO, Portugal Universidade do Porto Faculdade de Ciências, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Universidade de Trás-os-Montes e Alto Douro Centro de Química Vila Real, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal	Fundação para a Ciência e a Tecnologia Em curso
2019/01/01 - 2023/12/31	Applied Molecular Biosciences Unit UIDP/04378/2020 10.54499/UIDP/04378/2020 UIDB/04378/2020 10.54499/UIDB/04378/2020 Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal Universidade do Porto, Portugal Universidade Nova de Lisboa, Portugal Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal Unidade de Ciências Biomoleculares Aplicadas, Portugal Universidade do Porto Instituto de Ciências Tecnologias e Agroambiente, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal INESC Microsistemas e Nanotecnologias, Portugal Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2015/10/10 - 2017/12/31	Material´s Characterization with Nuclear Radioactive Techniques - synergy and complementarity applied to training and development. (old project: Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE-CERN) CERN/FIS-NUC/0004/2015 Provided by PTCRIS: 142410 Universidade de Aveiro CICECO, Portugal Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal FCiênciasID Associação para a Investigação e Desenvolvimento de Ciências, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2013/05/01 - 2015/10/31	Funcionalização de nanofios baseados em semicondutores de largo hiato energético utilizando feixes de iões: Materiais inovadores para nano-emissores de luz e nanosensores PTDC/CTM-NAN/2156/2012 Investigador responsável Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2013/05/04 - 2015/09/03	Tuning the energy gap of quantum wells based on III-N semiconductors for efficient green light-emitting diodes PTDC/FIS-NAN/0973/2012 Investigador responsável Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2012/06/01 - 2014/12/31	Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN - investigação aplicada a materiais com técnicas nucleares, formação e desenvolvimento. CERN/FP/123585/2011 Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2011/01/01 - 2013/12/31	Projecto Estratégico - UI 275 - 2011-2012 PEst-OE/FIS/UI0275/2011 Universidade de Lisboa Instituto Superior Técnico, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Lisboa Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2010/02/01 - 2013/07/31	Properties of free charge carriers and doping mechanisms in InN-based materials PTDC/FIS/100448/2008 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2010/04/01 - 2013/03/31	Modification studies of nano- and heterostructures of high gap semiconductors by ion implantation and neutron irradiation PTDC/CTM/100756/2008 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2011/02/01 - 2012/05/31	Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN - research applied to materials with nuclear techniques, training and development CERN/FP/116320/2010 Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2010/01/01 - 2010/12/31	Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN CERN/FP/109272/2009 Universidade de Lisboa Instituto Superior Técnico, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2007/07/01 - 2010/12/31	Ternary and quaternary nitride alloys for heterostructures with compatibility in network parameters: new materials for field effect transistors and high efficiency optoelectronic devices PTDC/FIS/65233/2006 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2007/05/01 - 2010/10/31	Implantação de nanocamadas magneticas de semicondutores de hiato largo para aplicações à spintrónica PTDC/FIS/66262/2006 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Universidade do Porto Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Concluído
2007/11/01 - 2008/10/31	Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN POCI/FP/81921/2007 PDCT/FP/63911/2005	Fundação para a Ciência e a Tecnologia Concluído
2005/09/01 - 2007/12/31	Experiências de Correlações Angulares Perturbadas no Reactor Português de Investigação POCI/FIS/58498/2004	Fundação para a Ciência e a Tecnologia Concluído
2005/07/04 - 2007/07/31	Dopagem óptica de AlN e nano-estruturas de GaN/AlN por implantação iónica POCI/FIS/57550/2004 Universidade de Aveiro, Portugal	Fundação para a Ciência e a Tecnologia Concluído

Outro

	Designação	Financiadores
2009 - 2015	The role of In in III-nitride ternary semiconductors ISOLDE/CERN Investigador responsável	Concluído

Produções

Publicações

Artigo em conferência	Verheij, Dirkjan; Peres, Marco; Cardoso, Susana; Alves, Luís Cerqueira; Alves, Eduardo; Durand, Cristophe; Eymery, Joël; Fernandes, Jorge; Lorenz, Katharina. "Ion beam induced current analysis in GaN microwires". 2019. 10.1051/epjconf/202023305001 Lorenz, K.; Redondo-Cubero, A.; Lourenço, M. B.; Sequeira, M. C.; Peres, M.; Freitas, A.; Alves, L. C.; et al. "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells, Proc. of SPIE Vol. 9748 (2016) 97480L". 2016. 10.1117/12.2211429 Yamaga, M.; Watanabe, H.; Kurahashi, M.; O'Donnell, K. P.; Lorenz, K.; Bockowski, M.; IOP. "Indirect excitation of Eu3+ in GaN codoped with Mg and Eu, Journal of Physics: Conference Series 619 (2015) 012025". 2015. 10.1088/1742-6596/619/1/012025 O'Donnell, K. P.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; Bockowski, M.. "Europium-doped GaN(Mg): beyond the limits of the light-emitting diode, Phys. Status Solidi C 11 (2014) 662–665". 2014. 10.1002/pssc.201300519 Kachkanov, Vyacheslav; Dolbnya, Igor; O'Donnell, Kevin; Lorenz, Katharina; Pereira, Sergio; Watson, Ian; Sadler, Thomas; et al. "Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2013. 10.1002/pssc.201200596 O'Donnell, K.P.; Martin, R.W.; Edwards, P.R.; Lorenz, K.; Alves, E.; Bockowski, M.. "Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN, AIP Conference Proceedings 1566, (2013) 63-64". 2013. 10.1063/1.4848286 Nogales, E.; Lopez, I.; Mendez, B.; Piqueras, J.; Lorenz, K.; Alves, E.; Garcia, J. A.. "Doped gallium oxide nanowires for photonics, Proc. of SPIE Vol. 8263 (2012) 82630B". 2012. 10.1117/12.907766 Kachkanov, V.; Dolbnya, I.P.; O'Donnell, K.P.; Lorenz, K.; Pereira, S.; Martin, R.W.; Edwards, P.R.; Watson, I.M.. "Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2012. 10.1557/opl.2012.216 Lacroix, B.; Leclerc, S.; Ruterana, P.; Declémy, A.; Miranda, S.M.C.; Lorenz, K.; Alves, E.. "Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation". 2012. 10.1557/opl.2011.995 Kachkanov, V.; O'Donnell, K.P.; Rice, C.; Wolverson, D.; Martin, R.W.; Lorenz, K.; Alves, E.; Bockowski, M.. "Zeeman splittings of the ⁵D 0- ⁷F 2 transitions of Eu ³⁺ ions implanted into GaN, Mater. Res. Soc. Symp. Proc. Vol. 1290 (2011)". 2011. 10.1557/opl.2011.241 Bola, AM; Correia, MR; Pereira, S; Gonzalez, JC; Lorenz, K; Alves, E; Barradas, N; Briot, O. "Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers, Phys. Status Solidi C 7 (2010) 56–59". 2010. 10.1002/pssc.200982632 Lorenz, K; Alves, E; Magalhães, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, M E G. "Defect studies and optical activation of Yb doped GaN, Journal of Physics: Conference Series 249 (2010) 012053". 2010. 10.1088/1742-6596/249/1/012053 Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K; Alves, E; Palacios, T; Jena, D. "Mechanisms of AlInN growth by MOVPE: modeling and experimental study, Phys. Status Solidi C, 5 (2008) 1688-1690". 2007. 10.1002/pssc.200778588 Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; et al. "Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence, Phys. Status Solidi C 3 (2006) 1927-1930". 2006. 10.1002/pssc.200565411 Lorenz, K; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E; Martin, RW; et al. "Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN, MRS Symp. Proc. 892 (2005) FF23.15". 2006. Roqan, I.S.; Trager-Cowan, C.; Hourahine, B.; Lorenz, K.; Nogales, E.; O'Donnell, K.P.; Martin, R.W.; et al. "Characterization of the blue emission of Tm/Er co-implanted GaN, MRS Symp. Proc. 892 (2005) FF23.13". 2006. Nogales, E.; Lorenz, K.; Wang, K.; Roqan, I.S.; Martin, R.W.; O'Donnell, K.P.; Alves, E.; Ruffenach, S.; Briot, O.. "A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN, MRS Symp. Proc. 892 (2005) FF24.3". 2006. Wojtowicz, T; Ruterana, P; Lorenz, K; Wahl, U; Alves, E; Ruffenach, S; Halambalakis, G; et al. "The atomic structure of defects formed during doping of GaN with rare earth ions, Phys. Status Solidi C 2 (2005) 1081-1084". 2005. 10.1002/pssc.200460625 Lorenz, K.; Wahl, U.; Alves, E.; Wojtowicz, T.; Ruterana, P.; Dalmasso, S.; Martin, R.W.; et al. "Processing of rare earth doped GaN with ion beams, MRS Symp. Proc. 798 (2003) 453-458". 2003. Lorenz, K.; Wahl, U.; Alves, E.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.. "High temperature implantation of Tm in GaN, MRS Symp. Proc. 798 (2004) 447-452". 2003. Dalmasso, S.; Martin, R.W.; Edwards, P.R.; Katchkanov, V.; O'Donnell, K.P.; Lorenz, K.; Alves, E.; et al. "Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN, MRS Symp. Proc. 798 (2004) Y 5.2". 2003. Lorenz, K; Wahl, U; Alves, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Ng, HM; et al. "High temperature implantation of Tm in GaN". Trabalho apresentado em MRS Fall Meeting, 2003. masso (a2) ... DOI: https://doi.org/10.1557/PROC-798-Y5.4 Lorenz, K; Vianden, R; Hoffmann, A; Rizzi, A; Lorenz, K.; Vianden, R.. "Defect recovery in AIN and InN after heavy ion implantation". 2002. https://doi.org/10.1002/pssc.200390076
Artigo em revista	Sall, M.; Sow, G.; Baillard, A.; Dujarrier, A.; Goodwin, L.; Mattei, J.G.; Sequeira, M.; et al. "Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission". Nano Trends 9 (2025): 100078. https://doi.org/10.1016/j.nwnano.2025.100078. 10.1016/j.nwnano.2025.100078 Tiago V. Fernandes; Pedro T. Patrício; António F. da Cunha; João Gaspar; Norberto Catarino; Marco Peres; Katharina Lorenz; et al. "Remarkable Recovery of Proton-Irradiated Cu(In,Ga)Se2-Based Solar Cells for Space Applications: Thermal and Light Annealing Treatment". ACS Applied Energy Materials (2025): https://doi.org/10.1021/acsaem.4c02703. 10.1021/acsaem.4c02703 Hussain, Mukhtar; Antunes, André Mesquita; Vaz, Gonçalo; Alves, Joana; Pires, Hugo; Imran, Tayyab; Peres, Marco; et al. "Anisotropic below bandgap harmonic generation in ß-gallium oxide". Optics Express 32 26 (2024): 47296. https://doi.org/10.1364/oe.525696. 10.1364/oe.525696 Mieszczynski, C.; Wyszkowska, E.; Jozwik, P.; Skrobas, K.; K.Stefanska-Skrobas; Barlak, M.; Ratajczak, R.; et al. "Damage kinetics in high-temperature irradiated Ni crystals". Applied Surface Science 676 (2024): 160991. https://doi.org/10.1016/j.apsusc.2024.160991. 10.1016/j.apsusc.2024.160991 António Fróis; João Ricardo Marques; Luís Santos; Marco Peres; Katharina Lorenz; Cristina Santos Louro; Ana Cristina Santos; et al. "Metal Release and Cell Viability of 316L Stainless Steel Sputter-Coated with N-Doped a-C:H Coatings". Applied Sciences 14 22 (2024): 10500. https://doi.org/10.3390/app142210500. 10.3390/app142210500 Verheij, Dirkjan; Peres, Marco; Alves, Luís Cerqueira; Cardoso, Susana; Alves, Eduardo; Durand, Christophe; Eymery, Joël; Lorenz, Katharina. "Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires". Radiation Physics and Chemistry 224 (2024): 111945. https://doi.org/10.1016/j.radphyschem.2024.111945. 10.1016/j.radphyschem.2024.111945 Marciel, Alice; Bastos, Alexandre; Pereira, Luiz; Jakka, Suresh Kumar; Borges, Joel; Vaz, Filipe; Peres, Marco; et al. "Niobium Oxide Thin Films Grown on Flexible ITO-Coated PET Substrates". Coatings 14 9 (2024): 1127. https://doi.org/10.3390/coatings14091127. 10.3390/coatings14091127 Fróis, António; Francisco, Romeu; Morais, Paula V.; Santos, Luís F.; Peres, Marco; Lorenz, Katharina; Santos, Ana C.; Louro, Cristina S.. "The influence of low nitrogen doping on bacterial adhesion of sputtered a-C:H coatings". Diamond and Related Materials 147 (2024): 111309. https://doi.org/10.1016/j.diamond.2024.111309. 10.1016/j.diamond.2024.111309 Yamaga, Mitsuo; Singh, Akhilesh K.; Cameron, Douglas; Edwards, Paul R.; Lorenz, Katharina; Kappers, Menno J.; Bockowski, Michal. "Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu". Journal of Luminescence 270 (2024): 120557. http://dx.doi.org/10.1016/j.jlumin.2024.120557. 10.1016/j.jlumin.2024.120557 Sierakowski, Kacper; Jaroszynski, Piotr; Jakiela, Rafal; Fijalkowski, Michal; Sochacki, Tomasz; Iwinska, Malgorzata; Turek, Marcin; Lorenz, Katharina; Bockowski, Michal. "Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride". Materials Science in Semiconductor Processing 171 (2024): 108022. http://dx.doi.org/10.1016/j.mssp.2023.108022. 10.1016/j.mssp.2023.108022 Verheij, Dirkjan; Vicentijevic, Milan; Jakšic, Milko; Peres, Marco; Alves, Luís Cerqueira; Cardoso, Susana; Alves, Eduardo; et al. "Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements". ACS Applied Electronic Materials (2024): http://dx.doi.org/10.1021/acsaelm.3c01584. 10.1021/acsaelm.3c01584 Duarte M. Esteves; Maria S. Batista; Joana Rodrigues; Ana V. Girão; Luís C. Alves; Ana L. Rodrigues; M. Isabel Dias; et al. "Photoluminescence, persistent luminescence and thermoluminescence studies of Cr-doped zinc gallogermanate (ZGGO:Cr)". Journal of Materials Chemistry C (2024): https://doi.org/10.1039/D4TC03924F. 10.1039/D4TC03924F Magalhães Esteves, Duarte; Rodrigues, Ana Luísa; Dias, Maria Isabel; Alves, Luís Cerqueira; Jia, Zhitai; Mu, Wenxiang; Lorenz, Katharina; Peres, Marco. "Thermoluminescence Studies of Proton-Irradiated Cr-, Mg-Codoped ß-Ga₂O₃". ACS Omega 8 50 (2023): 47874-47882. http://dx.doi.org/10.1021/acsomega.3c06429. 10.1021/acsomega.3c06429 Candeias, Maria B.; Fernandes, Tiago V.; Falcão, Bruno P.; Cunha, António F.; Cunha, José M. V.; Barbosa, João; Teixeira, Jennifer P.; et al. "Cu(In,Ga)Se$$_2$$-based solar cells for space applications: proton irradiation and annealing recovery". Journal of Materials Science 58 42 (2023): 16385-16401. http://dx.doi.org/10.1007/s10853-023-09033-x. 10.1007/s10853-023-09033-x Caçador, A.; Józwik, P.; Magalhães, S.; Marques, J.G.; Wendler, E.; Lorenz, K.. "Extracting defect profiles in ion-implanted GaN from ion channeling". Materials Science in Semiconductor Processing 166 (2023): 107702. http://dx.doi.org/10.1016/j.mssp.2023.107702. 10.1016/j.mssp.2023.107702 Mieszczynski, Cyprian; Jozwik, Przemyslaw; Skrobas, Kazimierz; Stefanska-Skrobas, Kamila; Ratajczak, Renata; Jagielski, Jacek; Garrido, Frederico; et al. "Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 540 (2023): 38-44. http://dx.doi.org/10.1016/j.nimb.2023.04.010. 10.1016/j.nimb.2023.04.010 Józwik, Przemyslaw; Caçador, Afonso; Lorenz, Katharina; Ratajczak, Renata; Mieszczynski, Cyprian. "Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 538 (2023): 198-204. http://dx.doi.org/10.1016/j.nimb.2023.03.002. 10.1016/j.nimb.2023.03.002 Magalhães, S; Cabaço, J S; Concepción, O; Buca, D; Stachowicz, M; Oliveira, F; Cerqueira, M F; Lorenz, K; Alves, E. "Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors". Journal of Physics D: Applied Physics 56 24 (2023): 245102. http://dx.doi.org/10.1088/1361-6463/acc597. 10.1088/1361-6463/acc597 Esteves, D. M.; Rodrigues, A. L.; Alves, L. C.; Alves, E.; Dias, M. I.; Jia, Z.; Mu, W.; Lorenz, K.; Peres, M.. "Probing the Cr3+ luminescence sensitization in ß-Ga2O3 with ion-beam-induced luminescence and thermoluminescence". Scientific Reports 13 1 (2023): http://dx.doi.org/10.1038/s41598-023-31824-0. 10.1038/s41598-023-31824-0 Mokhles Gerami, Adeleh; Heiniger-Schell, Juliana; da Silva, E. Lora; Costa, Messias S.; Costa, Cleidilane S.; Monteiro, João G.; Pires, José J.; et al. "Cd implantation in a-MoO3: An atomic scale study". Physical Review Materials 7 3 (2023): http://dx.doi.org/10.1103/physrevmaterials.7.033603. 10.1103/physrevmaterials.7.033603 Jin, Xin; Djurabekova, Flyura; Sequeira, Miguel; Lorenz, Katharina; Nordlund, Kai. "Effect of lattice voids on Rutherford backscattering dechanneling in tungsten". Journal of Physics D: Applied Physics 56 6 (2023): 065303. http://dx.doi.org/10.1088/1361-6463/acad12. 10.1088/1361-6463/acad12 A. M. Gerami; J. Heiniger-Schell; E. Lora da Silva; M. S. Costa; C. S. Costa; J. G. Monteiro; J. J. Pires; et al. "Cd implantation in a-MoO3: An atomic scale study". Physical Review Materials 7 (2023): 033060. https://doi.org/10.1103/PhysRevMaterials.7.033603. Sequeira, Miguel C.; Djurabekova, Flyura; Nordlund, Kai; Mattei, Jean-Gabriel; Monnet, Isabelle; Grygiel, Clara; Alves, Eduardo; Lorenz, Katharina. "Examining Different Regimes of Ionization-Induced Damage in GaN Through Atomistic Simulations". Small 18 49 (2022): http://dx.doi.org/10.1002/smll.202102235. 10.1002/smll.202102235 Barbosa, Marcelo B.; Correia, João Guilherme; Lorenz, Katharina; Lopes, Armandina M. L.; Oliveira, Gonçalo N. P.; Fenta, Abel S.; Schell, Juliana; et al. "Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ using acceptor Cd probes". Scientific Reports 12 1 (2022): http://dx.doi.org/10.1038/s41598-022-18121-y. 10.1038/s41598-022-18121-y Peres, M.; M. Esteves, D.; Teixeira, B. M. S.; Zanoni, J.; Alves, L. C.; Alves, E.; Santos, L. F.; et al. "Enhancing the luminescence yield of Cr3+ in ß -Ga2O3 by proton irradiation". Applied Physics Letters 120 26 (2022): http://dx.doi.org/10.1063/5.0089541. 10.1063/5.0089541 Vázquez, L; Redondo-Cubero, A; Lorenz, K; Palomares, F J; Cuerno, R; L Vázquez; A Redondo-Cubero; et al. "Surface nanopatterning by ion beam irradiation: compositional effects". Journal of Physics: Condensed Matter 34 33 (2022): 333002. http://dx.doi.org/10.1088/1361-648x/ac75a1. 10.1088/1361-648x/ac75a1 Lorenz, Katharina. "Ion Implantation into Nonconventional GaN Structures". Physics 4 2 (2022): 548-564. http://dx.doi.org/10.3390/physics4020036. 10.3390/physics4020036 Redondo-Cubero, A.; Palomares, F.J.; Lorenz, K.; Rubio-Zuazo, J.; Hübner, R.; Mompeán, F.J.; García-Hernández, M.; Castro, G.R.; Vázquez, L.. "Role of the metal supply pathway on silicon patterning by oblique ion beam sputtering". Applied Surface Science 580 (2022): 152267. http://dx.doi.org/10.1016/j.apsusc.2021.152267. 10.1016/j.apsusc.2021.152267 Cardoso, José P. S.; Correia, Maria Rosário; Vermeersch, Remy; Verheij, Dirkjan; Jacopin, Gwenole; Pernot, Julien; Monteiro, Teresa; et al. "Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes". ACS Applied Nano Materials 5 1 (2022): 972-984. http://dx.doi.org/10.1021/acsanm.1c03654. 10.1021/acsanm.1c03654 Józwik, Przemyslaw; Cardoso, José P. S.; Carvalho, Diogo F.; Correia, Maria R. P.; Sequeira, Miguel C.; Magalhães, Sérgio; Faye, Djibril Nd.; et al. "Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation". Physical Chemistry Chemical Physics 24 42 (2022): 25773-25787. http://dx.doi.org/10.1039/d2cp02526d. 10.1039/d2cp02526d E. Alves; K. Lorenz; N. Catarino; M. Peres; M. Dias; R. Mateus; L. C. Alves; et al. "An insider view of the Portuguese ion beam laboratory". The European Physical Journal Plus (2021): https://doi.org/10.1140/epjp/s13360-021-01629-z. 10.1140/epjp/s13360-021-01629-z Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Fernandes, J.; Lorenz, K.. "Self-powered proton detectors based on GaN core–shell p–n microwires". Applied Physics Letters 118 19 (2021): 193501. http://dx.doi.org/10.1063/5.0045050. 10.1063/5.0045050 Sequeira, Miguel C.; Mattei, Jean-Gabriel; Vazquez, Henrique; Djurabekova, Flyura; Nordlund, Kai; Monnet, Isabelle; Mota-Santiago, Pablo; et al. "Unravelling the secrets of the resistance of GaN to strongly ionising radiation". Communications Physics 4 1 (2021): 51. http://dx.doi.org/10.1038/s42005-021-00550-2. Publicado • 10.1038/s42005-021-00550-2 Cardoso, J.; Jacopin, G.; Faye, D.Nd.; Siladie, A.M.; Daudin, B.; Alves, E.; Lorenz, K.; et al. "Eu3+ optical activation engineering in AlxGa(1-x)N nanowires for red solid-state nano-emitters". Applied Materials Today 22 (2021): 100893. http://dx.doi.org/10.1016/j.apmt.2020.100893. 10.1016/j.apmt.2020.100893 Marciel, Alice; Graça, Manuel; Bastos, Alexandre; Pereira, Luiz; Suresh Kumar, Jakka; Borges, Joel; Vaz, Filipe; et al. "Molybdenum Oxide Thin Films Grown on Flexible ITO-Coated PET Substrates". Materials 14 4 (2021): 821. http://dx.doi.org/10.3390/ma14040821. 10.3390/ma14040821 Magalhães, S.; Cabaço, J. S.; Mateus, R.; Faye, D. Nd.; Pereira, D. R.; Peres, M.; Lorenz, K.; et al. "Crystal mosaicity determined by a novel layer deconvolution Williamson–Hall method". CrystEngComm 23 10 (2021): 2048-2062. http://dx.doi.org/10.1039/d0ce01669a. 10.1039/d0ce01669a José Cardoso; Nabiha Ben Sedrine; Przemyslaw Józwik; Miguel C. Sequeira; Christian M. Wetzel; Clara Grygiel; Katharina Lorenz; Teresa Monteiro; Maria Rosário P. Correia. "Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties". Journal of Materials Chemistry C (2021): https://doi.org/10.1039/D1TC01603B. 10.1039/D1TC01603B Branco, A.C.; Silva, R.; Jorge, H.; Santos, T.; Lorenz, K.; Polido, M.; Colaço, R.; Serro, A.P.; Figueiredo-Pina, C.G.. "Tribological performance of the pair human teeth vs 3D printed zirconia: An in vitro chewing simulation study". Journal of the Mechanical Behavior of Biomedical Materials 110 (2020): 103900. http://dx.doi.org/10.1016/j.jmbbm.2020.103900. 10.1016/j.jmbbm.2020.103900 Pereira, D.R.; Magalhães, S.; Díaz-Guerra, C.; Peres, M.; Correia, J.G.; Marques, J.G.; Silva, A.G.; et al. "Estimating the uncertainties of strain and damage analysis by X-ray diffraction in ion implanted MoO3". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 478 (2020): 290-296. http://dx.doi.org/10.1016/j.nimb.2020.07.016. 10.1016/j.nimb.2020.07.016 D. R. Pereira; S. Magalhães; C. Díaz-Guerra; M. Peres; J. G. Correia; J. G. Marques; A. G. Silva; et al. "Strain and damage profiling in ion implanted MoO3 by X-ray diffraction". Nuclear Instruments and Methods in Physics Research – B (2020): Em revisão Biquard, X.; Víllora, E. G.; Shimamura, K.; Lorenz, K.. "XANES/EXAFS study of the Lu and Y incorporation in the single crystal Tb3Sc2Al3O12 Faraday rotator". Journal of Applied Physics 127 11 (2020): 115106. http://dx.doi.org/10.1063/1.5145188. 10.1063/1.5145188 Cameron, D.; O'Donnell, K. P.; Edwards, P. R.; Peres, M.; Lorenz, K.; Kappers, M. J.; Bockowski, M.. "Acceptor state anchoring in gallium nitride". Applied Physics Letters 116 10 (2020): 102105. http://dx.doi.org/10.1063/1.5142168. 10.1063/1.5142168 Branco, A.C.; Silva, R.; Santos, T.; Jorge, H.; Rodrigues, A.R.; Fernandes, R.; Bandarra, S.; et al. "Suitability of 3D printed pieces of nanocrystalline zirconia for dental applications". Dental Materials 36 3 (2020): 442-455. http://dx.doi.org/10.1016/j.dental.2020.01.006. 10.1016/j.dental.2020.01.006 Filintoglou, K.; Pinakidou, F.; Arvanitidis, J.; Christofilos, D.; Paloura, E. C.; Ves, S.; Kutza, P.; et al. "Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide". Journal of Applied Physics 127 3 (2020): 034302. http://dx.doi.org/10.1063/1.5132604. 10.1063/1.5132604 M. B. Barbosa; J. G. Correia; K. Lorenz; R. Vianden; J. P. Araújo. "Studying electronic properties in GaN without electrical contacts using ¿-¿ vs e--¿ Perturbed Angular Correlations". Scientific Reports (2019): https://doi.org/10.1038/s41598-019-52098-5. 10.1038/s41598-019-52098-5 Przemyslaw Jozwik; Lech Nowicki; Renata Ratajczak; Anna Stonert; Cyprian Mieszczynski; Andrzej Turos; Krzysztof Morawiec; Katharina Lorenz; Eduardo Alves. "Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms". Journal of Applied Physics (2019): https://doi.org/10.1063/1.5111619. 10.1063/1.5111619 Redondo-Cubero; Vázquez; Jalabert; Lorenz; Sedrine. "Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation". Crystals 9 9 (2019): 453. http://dx.doi.org/10.3390/cryst9090453. 10.3390/cryst9090453 Mendes, P.; Lorenz, K.; Alves, E.; Schwaiger, S.; Scholz, F.; Magalhães, S.. "Measuring strain caused by ion implantation in GaN". Materials Science in Semiconductor Processing 98 (2019): 95-99. http://dx.doi.org/10.1016/j.mssp.2019.04.001. 10.1016/j.mssp.2019.04.001 Przemyslaw Jozwik; Sergio Magalhães; Renata Ratajczak; Cyprian Mieszczynski; Miguel Sequeira; Andrzej Turos; Roman Böttger; et al. "RBS/C, XRR, and XRD Studies of Damage Buildup in Er-Implanted ZnO". physica status solidi (b) 256 5 (2019): 1800364-1800364. https://doi.org/10.1002/pssb.201800364. 10.1002/pssb.201800364 Pereira, Daniela R.; Díaz-Guerra, Carlos; Peres, Marco; Magalhães, Sérgio; Correia, João G.; Marques, José G.; Silva, Ana G.; Alves, Eduardo; Lorenz, Katharina. "Engineering strain and conductivity of MoO3 by ion implantation". Acta Materialia 169 (2019): 15-27. http://dx.doi.org/10.1016/j.actamat.2019.02.029. 10.1016/j.actamat.2019.02.029 Faye, D. Nd.; Biquard, X.; Nogales, E.; Felizardo, M.; Peres, M.; Redondo-Cubero, A.; Auzelle, T.; et al. "Incorporation of Europium into GaN Nanowires by Ion Implantation". The Journal of Physical Chemistry C 123 18 (2019): 11874-11887. http://dx.doi.org/10.1021/acs.jpcc.8b12014. 10.1021/acs.jpcc.8b12014 Rodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.. "Luminescence properties of MOCVD grown Al 0.2 Ga 0.8 N layers implanted with Tb". Journal of Luminescence 210 (2019): 413-424. http://www.scopus.com/inward/record.url?eid=2-s2.0-85062464585&partnerID=MN8TOARS. 10.1016/j.jlumin.2019.02.060 Lorenz, Katharina. "Micro-Opto-Electro-Mechanical Device Based on Flexible ß-Ga2O3 Micro-Lamellas". ECS Journal of Solid State Science and Technology (2019): http://dx.doi.org/10.1149/2.0441907jss. 10.1149/2.0441907jss Peres, M.; Nogales, E.; Mendez, B.; Lorenz, K.; Correia, M. R.; Monteiro, T.; Ben Sedrine, N.. "Eu Activation in beta-Ga2O3 MOVPE Thin Films by Ion Implantation". Ecs Journal of Solid State Science and Technology 8 7 (2019): Q3097-Q3102. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000460500300001&KeyUID=WOS:000460500300001. 10.1149/2.0191907jss Ben Sedrine, N.; Rodrigues, J.; Faye, D. Nd.; Neves, A. J.; Alves, E.; Bockowski, M.; Hoffmann, V.; et al. "Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites". ACS Applied Nano Materials 1 8 (2018): 3845-3858. http://dx.doi.org/10.1021/acsanm.8b00612. 10.1021/acsanm.8b00612 Alves, E.; Lorenz, K.; Einsinger, W.; Ila, D.. "Editorial". Surface and Coatings Technology 355 (2018): 1-1. http://www.scopus.com/inward/record.url?eid=2-s2.0-85055511938&partnerID=MN8TOARS. 10.1016/j.surfcoat.2018.10.014 Peres, Marco; Alves, Luis C.; Rocha, Flavia; Catarino, Norberto; Cruz, Carlos; Alves, Eduardo; Silva, Ana G.; et al. "In Situ Characterization and Modification of -Ga2O3 Flakes Using an Ion Micro-Probe". Physica Status Solidi a-Applications and Materials Science 215 19 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000446839100008&KeyUID=WOS:000446839100008. 10.1002/pssa.201800190 Cardoso, J.; Ben Sedrine, N.; Alves, A.; Martins, M. A.; Belloeil, M.; Daudin, B.; Faye, D. Nd.; et al. "Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications". Applied Physics Letters 113 20 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000450279900011&KeyUID=WOS:000450279900011. 10.1063/1.5048772 Ajia, I. A.; Yamashita, Y.; Lorenz, K.; Muhammed, M. M.; Spasevski, L.; Almalawi, D.; Xu, J.; et al. "GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented beta-Ga2O3 substrate for UV vertical light emitting devices". Applied Physics Letters 113 8 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000442615500015&KeyUID=WOS:000442615500015. 10.1063/1.5025178 Edwards, Paul R.; O'Donnell, Kevin P.; Singh, Akhilesh K.; Cameron, Douglas; Lorenz, Katharina; Yamaga, Mitsuo; Leach, Jacob H.; et al. "Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):EuA Summary of Recent Results". Materials 11 10 (2018): 1800. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000448658400014&KeyUID=WOS:000448658400014. 10.3390/ma11101800 Almodovar, P.; Diaz-Guerra, C.; Ramirez-Castellanos, J.; Gonzalez-Calbet, J. M.; Peres, M.; Lorenz, K.. "Spatially resolved optical activation of Eu ions by laser irradiation implanted hexagonal MoO3 microrods". Applied Physics Letters 113 3 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000439429700017&KeyUID=WOS:000439429700017. 10.1063/1.5039559 Redondo-Cubero, A.; David-Bosne, E.; Wahl, U.; Miranda, P.; da Silva, M. R.; Correia, J. G.; Lorenz, K.. "Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles". Journal of Physics D-Applied Physics 51 11 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000425978200003&KeyUID=WOS:000425978200003. 10.1088/1361-6463/aaad8b Ben Sedrine, N.; Rodrigues, J.; Cardoso, J.; Nd. Faye, D.; Fialho, M.; Magalhaes, S.; Martins, A. F.; et al. "Optical investigations of europium ion implanted in nitride-based diode structures". Surface & Coatings Technology 355 (2018): 40-44. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000449896800008&KeyUID=WOS:000449896800008. 10.1016/j.surfcoat.2018.02.004 Verheij, D.; Peres, M.; Cardoso, S.; Alves, L. C.; Alves, E.; Durand, C.; Eymery, J.; Lorenz, K.. "Radiation sensors based on GaN microwires". Journal of Physics D-Applied Physics 51 17 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000429730200001&KeyUID=WOS:000429730200001. 10.1088/1361-6463/aab636 Redondo-Cubero, A.; Lorenz, K.; Palomares, F. J.; Munoz, A.; Castro, M.; Munoz-Garcia, J.; Cuerno, R.; Vazquez, L.. "Concurrent segregation and erosion effects in medium-energy iron beam patterning of silicon surfaces". Journal of Physics-Condensed Matter 30 27 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000435117700001&KeyUID=WOS:000435117700001. 10.1088/1361-648X/aac79a Pereira, D. R.; Peres, M.; Alves, L. C.; Correia, J. G.; Diaz-Guerra, C.; Silva, A. G.; Alves, E.; Lorenz, K.. "Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams". Surface & Coatings Technology 355 (2018): 50-54. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000449896800010&KeyUID=WOS:000449896800010. 10.1016/j.surfcoat.2018.01.034 Singh, A. K.; O'Donnell, K. P.; Edwards, P. R.; Lorenz, K.; Leach, J. H.; Bockowski, M.. "Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem". Journal of Physics D-Applied Physics 51 6 (2018): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000423210500002&KeyUID=WOS:000423210500002. 10.1088/1361-6463/aaa1cc Faye, D. Nd.; Dobeli, M.; Wendler, E.; Brunner, F.; Weyers, M.; Magalhaes, S.; Alves, E.; Lorenz, K.. "Crystal damage analysis of implanted AlxGa1-xN (0 <= x <= 1) by ion beam techniques". Surface & Coatings Technology 355 (2018): 55-60. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000449896800011&KeyUID=WOS:000449896800011. 10.1016/j.surfcoat.2018.01.020 Fialho, M.; Magalhaes, S.; Rodrigues, J.; Chauvat, M. P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.. "Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures". Surface & Coatings Technology 355 (2018): 29-39. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000449896800007&KeyUID=WOS:000449896800007. 10.1016/j.surfcoat.2018.02.008 Vila, M.; Diaz-Guerra, C.; Lorenz, K.; Piqueras, J.; Pis, I.; Magnano, E.; Munuera, C.; Alves, E.; Garcia-Hernandez, M.. "Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates". Crystengcomm 19 17 (2017): 2339-2348. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000400423400009&KeyUID=WOS:000400423400009. 10.1039/c7ce00242d Singh, A. K.; O'Donnell, K. P.; Edwards, P. R.; Lorenz, K.; Kappers, M. J.; Bockowski, M.. "Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor". Scientific Reports 7 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000393424200001&KeyUID=WOS:000393424200001. 10.1038/srep41982 Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Mendez, B.; Biquard, X.; Daudin, B.; Villora, E. G.; Shimamura, K.. "Doping beta-Ga2O3 with europium: influence of the implantation and annealing temperature". Journal of Physics D-Applied Physics 50 32 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000405823000001&KeyUID=WOS:000405823000001. 10.1088/1361-6463/aa79dc Azarov, Alexander; Wendler, Elke; Lorenz, Katharina; Monakhov, Edouard; Svensson, Bengt G.. "Effect of buried extended defects on the radiation tolerance of ZnO". Applied Physics Letters 110 17 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000400380200022&KeyUID=WOS:000400380200022. 10.1063/1.4981808 Singh, A. K.; O'Donnell, K. P.; Edwards, P. R.; Cameron, D.; Lorenz, K.; Kapper, M. J.; Bockowski, M.; Yamaga, M.; Prakash, R.. "Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the D-5(1) level". Applied Physics Letters 111 24 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000418098900005&KeyUID=WOS:000418098900005. 10.1063/1.5001143 Gonzalo, A.; Nogales, E.; Lorenz, K.; Villora, E. G.; Shimamura, K.; Piqueras, J.; Mendez, B.. "Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires". Journal of Luminescence 191 (2017): 56-60. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000408789700011&KeyUID=WOS:000408789700011. 10.1016/j.jlumin.2017.01.042 Lorenz, K.; Wendler, E.; Redondo-Cubero, A.; Catarino, N.; Chauvat, M. -P.; Schwaiger, S.; Scholz, F.; Alves, E.; Ruterana, P.. "Implantation damage formation in a-, c- and m-plane GaN". Acta Materialia 123 (2017): 177-187. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000389556500017&KeyUID=WOS:000389556500017. 10.1016/j.actamat.2016.10.020 Schoche, S.; Hofmann, T.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzen, E.; Kuhne, P.; Lorenz, K.; Schubert, M.; Darakchieva, V.. "Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1-xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect". Journal of Applied Physics 121 20 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000404164200006&KeyUID=WOS:000404164200006. 10.1063/1.4983765 Magalhaes, S.; Franco, N.; Watson, I. M.; Martin, R. W.; O'Donnell, K. P.; Schenk, H. P. D.; Tang, F.; et al. "Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates". Journal of Physics D-Applied Physics 50 20 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000400407300002&KeyUID=WOS:000400407300002. 10.1088/1361-6463/aa69dc Rodrigues, J.; Leitão, M.F.; Carreira, J.F.C.; Ben Sedrine, N.; Santos, N.F.; Felizardo, M.; Auzelle, T.; et al. "Correction to "Spectroscopic Analysis of Eu ³⁺ Implanted and Annealed GaN Layers and Nanowires"". Journal of Physical Chemistry C 120 12 (2016): 6907-6908. http://www.scopus.com/inward/record.url?eid=2-s2.0-84963788073&partnerID=MN8TOARS. 10.1021/acs.jpcc.6b02591 Carvalho, D.; Müller-Caspary, K.; Schowalter, M.; Grieb, T.; Mehrtens, T.; Rosenauer, A.; Ben, T.; et al. "Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction". Scientific Reports 6 (2016): 28459-28459. http://www.scopus.com/inward/record.url?eid=2-s2.0-84976574135&partnerID=MN8TOARS. 10.1038/srep28459 O'Donnell, K. P.; Edwards, P. R.; Yamaga, M.; Lorenz, K.; Kappers, M. J.; Bockowski, M.. "Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the D-5(0) to F-7(1) transition". Applied Physics Letters 108 2 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000370258400022&KeyUID=WOS:000370258400022. 10.1063/1.4939631 Rodrigues, J.; Fialho, M.; Magalhaes, S.; Correia, M. R.; Rino, L.; Alves, E.; Neves, A. J.; Lorenz, K.; Monteiro, T.. "Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers". Journal of Luminescence 178 (2016): 249-258. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000381643300035&KeyUID=WOS:000381643300035. 10.1016/j.jlumin.2016.05.018 Fialho, M.; Magalhaes, S.; Chauvat, M. P.; Ruterana, P.; Lorenz, K.; Alves, E.. "Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium". Journal of Applied Physics 120 16 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000387580600066&KeyUID=WOS:000387580600066. 10.1063/1.4966120 Wendler, Elke; Sobolev, Nikolai A.; Redondo-Cubero, Andres; Lorenz, Katharina. "Ion-beam induced effects in multi-layered semiconductor systems". Physica Status Solidi B-Basic Solid State Physics 253 11 (2016): 2099-2109. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000387453800002&KeyUID=WOS:000387453800002. 10.1002/pssb.201600405 Fialho, M.; Rodrigues, J.; Magalhaes, S.; Correia, M. R.; Monteiro, T.; Lorenz, K.; Alves, E.. "Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds". Semiconductor Science and Technology 31 3 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000372423200030&KeyUID=WOS:000372423200030. 10.1088/0268-1242/31/3/035026 Flemban, T. H.; Sequeira, M. C.; Zhang, Z.; Venkatesh, S.; Alves, E.; Lorenz, K.; Roqan, I. S.. "Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films". Journal of Applied Physics 119 6 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000370974200030&KeyUID=WOS:000370974200030. 10.1063/1.4941434 Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, F. J.; Bahena, D.; Ballesteros, C.; Hernandez-Calderon, I.; Vazquez, L.. "Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si (100): local correlation between the morphology and metal content". Nanotechnology 27 44 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000385487100001&KeyUID=WOS:000385487100001. 10.1088/0957-4484/27/44/444001 Faye, D. Nd.; Wendler, E.; Felizardo, M.; Magalhaes, S.; Alves, E.; Brunner, F.; Weyers, M.; Lorenz, K.. "Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds". Journal of Physical Chemistry C 120 13 (2016): 7277-7283. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000373862700040&KeyUID=WOS:000373862700040. 10.1021/acs.jpcc.6b00133 Magalhaes, S.; Fialho, M.; Peres, M.; Lorenz, K.; Alves, E.. "Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N". Journal of Physics D-Applied Physics 49 13 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000371908800022&KeyUID=WOS:000371908800022. 10.1088/0022-3727/49/13/135308 Mitchell, B.; Timmerman, D.; Poplawsky, J.; Zhu, W.; Lee, D.; Wakamatsu, R.; Takatsu, J.; et al. "Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications". Scientific Reports 6 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000391973000001&KeyUID=WOS:000391973000001. 10.1038/srep18808 Rodrigues, J.; Fialho, M.; Esteves, T. C.; Santos, N. F.; Ben Sedrine, N.; Rino, L.; Neves, A. J.; et al. "Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers". Journal of Applied Physics 120 8 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000383913400001&KeyUID=WOS:000383913400001. 10.1063/1.4961931 Faye, D. Nd.; Fialho, M.; Magalhaes, S.; Alves, E.; Ben Sedrine, N.; Rodrigues, J.; Correia, M. R.; et al. "Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 379 (2016): 251-254. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000379093800049&KeyUID=WOS:000379093800049. 10.1016/j.nimb.2016.03.028 Moreno-Barrado, A.; Gago, R.; Redondo-Cubero, A.; Vazquez, L.; Munoz-Garcia, J.; Cuerno, R.; Lorenz, K.; Castro, M.. "Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering". Epl 109 4 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000351955600023&KeyUID=WOS:000351955600023. 10.1209/0295-5075/109/48003 Sousa, Marco A.; Esteves, Teresa C.; Ben Sedrine, Nabiha; Rodrigues, Joana; Lourenco, Marcio B.; Redondo-Cubero, Andres; Alves, Eduardo; et al. "Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen". Scientific Reports 5 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000352338800001&KeyUID=WOS:000352338800001. 10.1038/srep09703 Magalhaes, S.; Watson, I. M.; Pereira, S.; Franco, N.; Tan, L. T.; Martin, R. W.; O'Donnell, K. P.; et al. "Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents". Journal of Physics D-Applied Physics 48 1 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000347979700006&KeyUID=WOS:000347979700006. 10.1088/0022-3727/48/1/015103 Ruterana, Pierre; Chauvat, Marie-Pierre; Lorenz, Katharina. "Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission". Semiconductor Science and Technology 30 4 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000354781400006&KeyUID=WOS:000354781400006. 10.1088/0268-1242/30/4/044004 Rodrigues, J.; Leitao, M. F.; Carreira, J. F. C.; Ben Sedrine, N.; Santos, N. F.; Felizardo, M.; Auzelle, T.; et al. "Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires". Journal of Physical Chemistry C 119 31 (2015): 17954-17964. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000359332200051&KeyUID=WOS:000359332200051. 10.1021/acs.jpcc.5b05101 Ben Sedrine, N.; Esteves, T. C.; Rodrigues, J.; Rino, L.; Correia, M. R.; Sequeira, M. C.; Neves, A. J.; et al. "Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure". Scientific Reports 5 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000360638800001&KeyUID=WOS:000360638800001. 10.1038/srep13739 Carvalho, Daniel; Morales, Francisco M.; Ben, Teresa; Garcia, Rafael; Redondo-Cubero, Andres; Alves, Eduardo; Lorenz, Katharina; et al. "Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs". Microscopy and Microanalysis 21 4 (2015): 994-1005. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000358834600022&KeyUID=WOS:000358834600022. 10.1017/S143192761501301X Redondo-Cubero, A.; Lorenz, K.; Wendler, E.; Magalhaes, S.; Alves, E.; Carvalho, D.; Ben, T.; et al. "Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing". Nanotechnology 26 42 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000363433800015&KeyUID=WOS:000363433800015. 10.1088/0957-4484/26/42/425703 Méndez, B.; Lorenz, K.; Fraboni, B.; Ambacher, O.. "Functional nanowires: Synthesis, characterization and applications". Physica Status Solidi (C) Current Topics in Solid State Physics 11 2 (2014): 313-314. http://www.scopus.com/inward/record.url?eid=2-s2.0-84894430421&partnerID=MN8TOARS. 10.1002/pssc.201470042 Miranda, S. M. C.; Edwards, P. R.; O'Donnell, K. P.; Bockowski, M.; Alves, E.; Roqan, I. S.; Vantomme, A.; Lorenz, K.; Hildebrandt, S. "Sequential multiple-step europium ion implantation and annealing of GaN". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 11, No 2 11 2 (2014): 253-257. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000335379700013&KeyUID=WOS:000335379700013. 10.1002/pssc.201300210 Taylor, E.; Smith, M. D.; Sadler, T. C.; Lorenz, K.; Li, H. N.; Alves, E.; Parbrook, P. J.; Martin, R. W.. "Structural and optical properties of Ga auto-incorporated InAlN epilayers". Journal of Crystal Growth 408 (2014): 97-101. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000344949400017&KeyUID=WOS:000344949400017. 10.1016/j.jcrysgro.2014.09.031 Marques, Jose G.; Lorenz, Katharina. "Lattice location of Hf and its interaction with other impurities in LiNbO3: a review (vol 53, 060901, 2014)". Optical Engineering 53 6 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000340672800054&KeyUID=WOS:000340672800054. 10.1117/1.OE.53.6.069803 Marques, J. G.; Lorenz, K.; Teherani, FH; Look, DC; Rogers, DJ. "Lattice location of Hf and its interaction with other impurities in LiNbO3: an integrated review". Oxide-Based Materials and Devices V 8987 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337582100028&KeyUID=WOS:000337582100028. 10.1117/12.2037650 Lopez, I.; Lorenz, K.; Nogales, E.; Mendez, B.; Piqueras, J.; Alves, E.; Garcia, J. A.. "Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments". Journal of Materials Science 49 3 (2014): 1279-1285. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000328261200034&KeyUID=WOS:000328261200034. 10.1007/s10853-013-7811-x Rodrigues, J.; Fernandes, A. J. S.; Mata, D.; Holz, T.; Carvalho, R. G.; Allah, R. Fath; Ben, T.; et al. "ZnO micro/nanocrystals grown by Laser Assisted Flow Deposition". Oxide-Based Materials and Devices V 8987 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337582100034&KeyUID=WOS:000337582100034. 10.1117/12.2039907 Rodrigues, J.; Ben Sedrine, N.; Felizardo, M.; Soares, M. J.; Alves, E.; Neves, A. J.; Fellmann, V.; et al. "GaN:Pr3+ nanostructures for red solid state light emission". Rsc Advances 4 108 (2014): 62869-62877. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000345701500008&KeyUID=WOS:000345701500008. 10.1039/c4ra08571j Smith, M. D.; Taylor, E.; Sadler, T. C.; Zubialevich, V. Z.; Lorenz, K.; Li, H. N.; O'Connell, J.; et al. "Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD". Journal of Materials Chemistry C 2 29 (2014): 5787-5792. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000339396700007&KeyUID=WOS:000339396700007. 10.1039/c4tc00480a Lorenz, K.; Peres, M.; Felizardo, M.; Correia, J. G.; Alves, L. C.; Alves, E.; Lopez, I.; et al. "Doping of Ga2O3 bulk crystals and NWs by ion implantation". Oxide-Based Materials and Devices V 8987 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000337582100017&KeyUID=WOS:000337582100017. 10.1117/12.2037627 Vila, M.; Diaz-Guerra, C.; Jerez, D.; Lorenz, K.; Piqueras, J.; Alves, E.. "Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications". Journal of Physics D-Applied Physics 47 35 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000341353800010&KeyUID=WOS:000341353800010. 10.1088/0022-3727/47/35/355105 Marques, Jose G.; Lorenz, Katharina. "Lattice location of Hf and its interaction with other impurities in LiNbO3: a review". Optical Engineering 53 6 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000340672800002&KeyUID=WOS:000340672800002. 10.1117/1.OE.53.6.060901 Valdueza-Felip, S.; Bellet-Amalric, E.; Nunez-Cascajero, A.; Wang, Y.; Chauvat, M. -P.; Ruterana, P.; Pouget, S.; et al. "High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics". Journal of Applied Physics 116 23 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000346634500013&KeyUID=WOS:000346634500013. 10.1063/1.4903944 Muhammed, M. M.; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, I. S.. "High optical and structural quality of GaN epilayers grown on ((2)over-bar01) beta-Ga2O3". Applied Physics Letters 105 4 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000341152600045&KeyUID=WOS:000341152600045. 10.1063/1.4891761 Vila, Maria; Diaz-Guerra, Carlos; Lorenz, Katharina; Piqueras, Javier; Alves, Eduardo; Nappini, Silvia; Magnano, Elena. "Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications". Journal of Materials Chemistry C 1 47 (2013): 7920-7929. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000327259700020&KeyUID=WOS:000327259700020. 10.1039/c3tc31989j Soares, M. R. N.; Soares, M. J.; Alves, L. C.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.. "The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 306 (2013): 207-211. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321085900043&KeyUID=WOS:000321085900043. 10.1016/j.nimb.2012.11.036 Redondo-Cubero, A.; Rodrigues, J.; Brandt, M.; Schaefer, P.; Henneberger, F.; Correia, M. R.; Monteiro, T.; et al. "On the origin of strain relaxation in epitaxial CdZnO layers". Oxide-Based Materials and Devices Iv 8626 (2013): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000325342500015&KeyUID=WOS:000325342500015. 10.1117/12.2002969 Redondo-Cubero, A.; Lorenz, K.; Wendler, E.; Carvalho, D.; Ben, T.; Morales, F. M.; Garcia, R.; Fellmann, V.; Daudin, B.. "Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures". Nanotechnology 24 50 (2013): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000328478900032&KeyUID=WOS:000328478900032. 10.1088/0957-4484/24/50/505717 Rodrigues, J.; Miranda, S. M. C.; Fernandes, A. J. S.; Nogales, E.; Alves, L. C.; Alves, E.; Tourbot, G.; et al. "Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 10, No 4 10 4 (2013): 667-672. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000317284600027&KeyUID=WOS:000317284600027. 10.1002/pssc.201200714 Rodrigues, J.; Miranda, S. M. C.; Peres, M.; Nogales, E.; Alves, L. C.; Alves, E.; Tourbot, G.; et al. "A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 306 (2013): 201-206. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321085900042&KeyUID=WOS:000321085900042. 10.1016/j.nimb.2012.12.028 Peres, M.; Magalhaes, S.; Soares, M. R.; Soares, M. J.; Rino, L.; Alves, E.; Lorenz, K.; et al. "Disorder induced violet/blue luminescence in rf-deposited ZnO films". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 10, No 4 10 4 (2013): 662-666. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000317284600026&KeyUID=WOS:000317284600026. 10.1002/pssc.201200873 Lorenz, K.; Nogales, E.; Miranda, S. M. C.; Franco, N.; Mendez, B.; Alves, E.; Tourbot, G.; Daudin, B.. "Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering". Acta Materialia 61 9 (2013): 3278-3284. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000318533500014&KeyUID=WOS:000318533500014. 10.1016/j.actamat.2013.02.016 Wendler, E.; Wesch, W.; Azarov, A. Yu.; Catarino, N.; Redondo-Cubero, A.; Alves, E.; Lorenz, K.. "Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 307 (2013): 394-398. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321722200088&KeyUID=WOS:000321722200088. 10.1016/j.nimb.2013.01.020 Taylor, E.; Fang, F.; Oehler, F.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; et al. "Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates". Semiconductor Science and Technology 28 6 (2013): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000320382200011&KeyUID=WOS:000320382200011. 10.1088/0268-1242/28/6/065011 Santos, N. F.; Fernandes, A. J. S.; Alves, L. C.; Sobolev, N. A.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.. "Microprobe analysis, iono- and photo-luminescence of Mn2+ activated ZnGa2O4 fibres". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 306 (2013): 195-200. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321085900041&KeyUID=WOS:000321085900041. 10.1016/j.nimb.2012.12.029 Barbosa, M. B.; Goncalves, J. N.; Redondo-Cubero, A.; Miranda, S. M. C.; Simon, R.; Kessler, P.; Brandt, M.; et al. "Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations". Physica Status Solidi B-Basic Solid State Physics 250 4 (2013): 801-808. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000318791900027&KeyUID=WOS:000318791900027. 10.1002/pssb.201200923 Fialho, M.; Lorenz, K.; Magalhaes, S.; Rodrigues, J.; Santos, N. F.; Monteiro, T.; Alves, E.. "Lattice site location and luminescence studies of AlxGa1-xN alloys doped with thulium ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 307 (2013): 495-498. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321722200110&KeyUID=WOS:000321722200110. 10.1016/j.nimb.2013.01.010 Ruterana, Pierre; Chauvat, Marie-Pierre; Lorenz, Katharina. "Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors". Japanese Journal of Applied Physics 52 11 (2013): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000328492300040&KeyUID=WOS:000328492300040. 10.7567/JJAP.52.11NH02 Maur, M. Auf Der; Lorenz, K.; Di Carlo, A.; Auf der Maur, M.. "Band gap engineering approaches to increase InGaN/GaN LED efficiency". Optical and Quantum Electronics 44 3-5 (2012): 83-88. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000304625500004&KeyUID=WOS:000304625500004. 10.1007/s11082-011-9536-x Kessler, P.; Lorenz, K.; Miranda, S. M. C.; Simon, R.; Correia, J. G.; Johnston, K.; Vianden, R.; et al. "Cd doping of AlN via ion implantation studied with perturbed angular correlation". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 3-4 9 3-4 (2012): 1032-1035. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000306521600154&KeyUID=WOS:000306521600154. 10.1002/pssc.201100207 Fialho, M.; Magalhaes, S.; Alves, L. C.; Marques, C.; Maalej, R.; Monteiro, T.; Lorenz, K.; Alves, E.. "AlN content influence on the properties of AlxGa1-xN doped with Pr ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 273 (2012): 149-152. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000300471000041&KeyUID=WOS:000300471000041. 10.1016/j.nimb.2011.07.062 Catarino, N.; Nogales, E.; Franco, N.; Darakchieva, V.; Miranda, S. M. C.; Mendez, B.; Alves, E.; Marques, J. G.; Lorenz, K.. "Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN". Epl 97 6 (2012): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000301953300039&KeyUID=WOS:000301953300039. 10.1209/0295-5075/97/68004 Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.. "Cd ion implantation in AlN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 289 (2012): 43-46. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000310765500008&KeyUID=WOS:000310765500008. 10.1016/j.nimb.2012.08.007 Miranda, P.; Wahl, U.; Catarino, N.; Lorenz, K.; Correia, J. G.; Alves, E.. "Damage formation and recovery in Fe implanted 6H-SiC". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 286 (2012): 89-92. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000309488300017&KeyUID=WOS:000309488300017. 10.1016/j.nimb.2011.10.072 Rodrigues, J.; Peres, M.; Soares, M. J.; Lorenz, K.; Marques, J. G.; Neves, A. J.; Monteiro, T.; et al. "Influence of neutron irradiation and annealing on the optical properties of GaN". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 3-4 9 3-4 (2012): 1016-1020. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000306521600150&KeyUID=WOS:000306521600150. 10.1002/pssc.201100200 Redondo-Cubero, A.; Brandt, M.; Henneberger, F.; Alves, E.; Lorenz, K.; Teherani, FH; Look, DC; Rogers, DJ. "Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers". Oxide-Based Materials and Devices Iii 8263 (2012): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000303381200018&KeyUID=WOS:000303381200018. 10.1117/12.908496 Magalhaes, S.; Barradas, N. P.; Alves, E.; Watson, I. M.; Lorenz, K.. "High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 273 (2012): 105-108. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000300471000030&KeyUID=WOS:000300471000030. 10.1016/j.nimb.2011.07.051 Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, I. S.; O'Donnell, K. P.; Bockowski, M.; Chyi, JI; et al. "High pressure annealing of Europium implanted GaN". Gallium Nitride Materials and Devices Vii 8262 (2012): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000302556100005&KeyUID=WOS:000302556100005. 10.1117/12.906810 Leclerc, S.; Lacroix, B.; Declemy, A.; Lorenz, K.; Ruterana, P.. "Mechanisms of damage formation in Eu-implanted AlN". Journal of Applied Physics 112 7 (2012): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000310489400047&KeyUID=WOS:000310489400047. 10.1063/1.4758311 Fialho, M.; Lorenz, K.; Magalhaes, S.; Redondo-Cubero, A.; Rodrigues, J.; Santos, N. F.; Monteiro, T.; et al. "Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions". Ion Implantation Technology 2012 1496 (2012): 63-66. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000312160700013&KeyUID=WOS:000312160700013. 10.1063/1.4766490 Miranda, S. M. C.; Kessler, P.; Correia, J. G.; Vianden, R.; Johnston, K.; Alves, E.; Lorenz, K.; et al. "Ion implantation of Cd and Ag into AlN and GaN". Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 3-4 9 3-4 (2012): 1060-1064. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000306521600161&KeyUID=WOS:000306521600161. 10.1002/pssc.201100203 O'Donnell, K. P.; Maur, M. Auf Der; Di Carlo, A.; Lorenz, K.; SORBET Consortium. "It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting". Physica Status Solidi-Rapid Research Letters 6 2 (2012): 49-52. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000300768400001&KeyUID=WOS:000300768400001. 10.1002/pssr.201100206 Darakchieva, V.; Lorenz, K.; Xie, M. -Y.; Alves, E.; Schaff, W. J.; Yamaguchi, T.; Nanishi, Y.; et al. "Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN". Physica Status Solidi a-Applications and Materials Science 209 1 (2012): 91-94. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000303380700019&KeyUID=WOS:000303380700019. 10.1002/pssa.201100175 Rodrigues, J.; Miranda, S. M. C.; Santos, N. F.; Neves, A. J.; Alves, E.; Lorenz, K.; Monteiro, T.. "Rare earth co-doping nitride layers for visible light". Materials Chemistry and Physics 134 2-3 (2012): 716-720. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000305918200025&KeyUID=WOS:000305918200025. 10.1016/j.matchemphys.2012.03.056 Redondo-Cubero, A.; Hierro, A.; Chauveau, J. -M.; Lorenz, K.; Tabares, G.; Franco, N.; Alves, E.; Munoz, E.. "Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents". Crystengcomm 14 5 (2012): 1637-1640. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000300045200020&KeyUID=WOS:000300045200020. 10.1039/c2ce06315h Lacroix, B.; Leclerc, S.; Declemy, A.; Lorenz, K.; Alves, E.; Ruterana, P.. "Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction". Epl 96 4 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000297322500032&KeyUID=WOS:000297322500032. 10.1209/0295-5075/96/46002 Lorenz, K.; Peres, M.; Franco, N.; Marques, J. G.; Miranda, S. M. C.; Magalhaes, S.; Monteiro, T.; et al. "Radiation damage formation and annealing in GaN and ZnO". Oxide-Based Materials and Devices Ii 7940 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000293629300015&KeyUID=WOS:000293629300015. 10.1117/12.879402 Lorenz, K.; Miranda, S. M. C.; Barradas, N. P.; Alves, E.; Nanishi, Y.; Schaff, W. J.; Tu, L. W.; et al. "Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study". Application of Accelerators in Research and Industry: Twenty-First International Conference 1336 (2011): 310-313. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000302912900064&KeyUID=WOS:000302912900064. 10.1063/1.3586110 Fellmann, V; Jaffrennou, P; Sam-Giao, D; Gayral, B; Lorenz, K; Alves, E; Daudin, B. "Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy". Japanese Journal of Applied Physics 50 3 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000288649800012&KeyUID=WOS:000288649800012. 10.1143/JJAP.50.031001 Lacroix, B.; Chauvat, M. P.; Ruterana, P.; Lorenz, K.; Alves, E.; Syrkin, A.. "The high sensitivity of InN under rare earth ion implantation at medium range energy". Journal of Physics D-Applied Physics 44 29 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292383000014&KeyUID=WOS:000292383000014. 10.1088/0022-3727/44/29/295402 Miranda, SMC; Peres, M; Monteiro, T; Alves, E; Sun, HD; Geruschke, T; Vianden, R; Lorenz, K. "Rapid thermal annealing of rare earth implanted ZnO epitaxial layers". Optical Materials 33 7 (2011): 1139-1142. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291240200041&KeyUID=WOS:000291240200041. 10.1016/j.optmat.2010.10.009 Soares, MJ; Leitao, JP; da Silva, MIN; Gonzalez, JC; Matinaga, FM; Lorenz, K; Alves, E; Peres, M; Monteiro, T. "Structural and optical properties of Er implanted AlN thin films: Green and infrared photoluminescence at room temperature". Optical Materials 33 7 (2011): 1055-1058. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291240200020&KeyUID=WOS:000291240200020. 10.1016/j.optmat.2010.09.005 Darakchieva, V.; Lorenz, K.; Xie, M. -Y.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Tu, L. W.; et al. "Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations". Journal of Applied Physics 110 6 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000295619300055&KeyUID=WOS:000295619300055. 10.1063/1.3642969 O'Donnell, KP; Roqan, IS; Wang, K; Lorenz, K; Alves, E; Bockowski, M. "The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN". Optical Materials 33 7 (2011): 1063-1065. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291240200022&KeyUID=WOS:000291240200022. 10.1016/j.optmat.2010.07.002 Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ; Fellmann, V; Neves, AJ; Alves, E; et al. "The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD". Optical Materials 33 7 (2011): 1045-1049. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291240200018&KeyUID=WOS:000291240200018. 10.1016/j.optmat.2010.10.025 Kessler, P.; Lorenz, K.; Vianden, R.. "Implanted impurities in wide band gap semiconductors". Defect and Diffusion Forum 311 (2011): 167-179. http://www.scopus.com/inward/record.url?eid=2-s2.0-79955387003&partnerID=MN8TOARS. 10.4028/www.scientific.net/DDF.311.167 Barradas, N. P.; Lorenz, K.; Darakchieva, V.; Alves, E.; McDaniel, FD; Doyle, BL. "A Double Scattering Analytical Model For Elastic Recoil Detection Analysis". Application of Accelerators in Research and Industry: Twenty-First International Conference 1336 (2011): 314-318. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000302912900065&KeyUID=WOS:000302912900065. 10.1063/1.3586111 Peres, Marco; Magalhaes, Sergio; Fellmann, Vincent; Daudin, Bruno; Neves, Armando Jose; Alves, Eduardo; Lorenz, Katharina; Monteiro, Teresa. "Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination". Nanoscale Research Letters 6 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292292500003&KeyUID=WOS:000292292500003. 10.1186/1556-276X-6-378 Darakchieva, V; Xie, MY; Rogalla, D; Becker, HW; Lorenz, K; Alves, E; Ruffenach, S; Moret, M; Briot, O. "Free electron properties and hydrogen in InN grown by MOVPE". Physica Status Solidi a-Applications and Materials Science 208 5 (2011): 1179-1182. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000290630200030&KeyUID=WOS:000290630200030. 10.1002/pssa.201001151 Ruterana, P; Lacroix, B; Lorenz, K. "A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature". Journal of Applied Physics 109 1 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000286219300031&KeyUID=WOS:000286219300031. 10.1063/1.3527944 Nogales, E; Hidalgo, P; Lorenz, K; Mendez, B; Piqueras, J; Alves, E. "Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures". Nanotechnology 22 28 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291468000037&KeyUID=WOS:000291468000037. 10.1088/0957-4484/22/28/285706 Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K; Alves, E; Ruterana, P; Monroy, E. "Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers". Applied Physics Letters 96 18 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000277422000018&KeyUID=WOS:000277422000018. 10.1063/1.3427310 Peres, M; Neves, AJ; Monteiro, T; Magalhaes, S; Alves, E; Lorenz, K; Okuno-Vila, H; et al. "Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots". Physica Status Solidi B-Basic Solid State Physics 247 7 (2010): 1675-1678. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000280263700018&KeyUID=WOS:000280263700018. 10.1002/pssb.200983674 Darakchieva, V; Lorenz, K; Barradas, NP; Alves, E; Monemar, B; Schubert, M; Franco, N; et al. "Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material". Applied Physics Letters 96 8 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000275027200022&KeyUID=WOS:000275027200022. 10.1063/1.3327333 Roqan, IS; O'Donnell, KP; Martin, RW; Edwards, PR; Song, SF; Vantomme, A; Lorenz, K; Alves, E; Bockowski, M. "Identification of the prime optical center in GaN:Eu3+". Physical Review B 81 8 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000275053300062&KeyUID=WOS:000275053300062. 10.1103/PhysRevB.81.085209 Lorenz, K; Alves, E; Gloux, F; Ruterana, P; Peres, M; Neves, AJ; Monteiro, T. "Optical doping and damage formation in AlN by Eu implantation". Journal of Applied Physics 107 2 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000274180600048&KeyUID=WOS:000274180600048. 10.1063/1.3291100 Lorenz, K; Alves, E; Gloux, F; Ruterana, P. "RE Implantation and Annealing of III-Nitrides". Rare Earth Doped Iii-Nitrides For Optoelectronic and Spintronic Applications 124 (2010): 25-54. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282663900002&KeyUID=WOS:000282663900002. Lorenz, K; Alves, E; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M. "Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy". Applied Physics Letters 97 11 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282032900029&KeyUID=WOS:000282032900029. 10.1063/1.3489103 Peres, M; Neves, AJ; Monteiro, T; Magalhaes, S; Franco, N; Lorenz, K; Alves, E; et al. "Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice". Journal of Nanoscience and Nanotechnology 10 4 (2010): 2473-2478. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000273984900029&KeyUID=WOS:000273984900029. 10.1166/jnn.2010.1430 Lee, KH; Chiou, JW; Chen, JM; Lee, JF; Braud, A; Lorenz, K; Alves, E; Chen, IG. "The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy". Journal of the American Ceramic Society 93 11 (2010): 3531-3534. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000283987400002&KeyUID=WOS:000283987400002. 10.1111/j.1551-2916.2010.04059.x Barradas, NP; Mateus, R; Fonseca, M; Reis, MA; Lorenz, K; Vickridge, I. "Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 268 11-12 (2010): 1829-1832. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000278702300030&KeyUID=WOS:000278702300030. 10.1016/j.nimb.2010.02.092 Kessler, P.; Lorenz, K.; Miranda, S.M.C.; Correia, J.G.; Johnston, K.; Vianden, R.. "An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices". Hyperfine Interactions 197 1 (2010): 187-191. http://www.scopus.com/inward/record.url?eid=2-s2.0-79951552541&partnerID=MN8TOARS. 10.1007/s10751-010-0200-9 Lorenz, K; Magalhaes, S; Franco, N; Barradas, NP; Darakchieva, V; Alves, E; Pereira, S; et al. "Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties". Physica Status Solidi B-Basic Solid State Physics 247 7 (2010): 1740-1746. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000280263700035&KeyUID=WOS:000280263700035. 10.1002/pssb.200983656 Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E; Monteiro, T; Lorenz, K. "Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation". Journal of Applied Physics 108 8 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000283745100121&KeyUID=WOS:000283745100121. 10.1063/1.3496624 Lorenz, K; Magalhaes, S; Alves, E; Peres, M; Monteiro, T; Neves, AJ; Bockowski, M. "High temperature annealing of Europium implanted AlN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 268 19 (2010): 2907-2910. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282301100013&KeyUID=WOS:000282301100013. 10.1016/j.nimb.2010.05.003 Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Poisson, MAD; Alves, E; Munoz, E. "Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN". Journal of Physics D-Applied Physics 43 5 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000274411200019&KeyUID=WOS:000274411200019. 10.1088/0022-3727/43/5/055406 Magalhaes, S; Lorenz, K; Franco, N; Barradas, NP; Alves, E; Monteiro, T; Amstatt, B; Fellmann, V; Daudin, B. "Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures". Surface and Interface Analysis 42 10-11 (2010): 1552-1555. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282668800009&KeyUID=WOS:000282668800009. 10.1002/sia.3614 Geruschke, T; Lorenz, K; Vianden, R. "Alloy and lattice disorder in Hf implanted AlxGa1-xN (0 <= x <= 1)". Physica B-Condensed Matter 404 23-24 (2009): 4882-4885. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000276029300105&KeyUID=WOS:000276029300105. 10.1016/j.physb.2009.08.253 Redondo-Cubero, A; Lorenz, K; Franco, N; Fernandez-Garrido, S; Gago, R; Smulders, PJM; Munoz, E; Calleja, E; Alves, E. "Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling". Journal of Physics D-Applied Physics 42 6 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000263824200053&KeyUID=WOS:000263824200053. 10.1088/0022-3727/42/6/065420 Peres, M; Magalhaes, S; Franco, N; Soares, MJ; Neves, AJ; Alves, E; Lorenz, K; Monteiro, T. "Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0 <= x <= 1) alloys". Microelectronics Journal 40 2 (2009): 377-380. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000263695100053&KeyUID=WOS:000263695100053. 10.1016/j.mejo.2008.07.032 Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernandez-Garrido, S; Smulders, PJM; Munoz, E; et al. "Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures". Applied Physics Letters 95 5 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000268809400033&KeyUID=WOS:000268809400033. 10.1063/1.3202421 Lorenz, K; Roqan, IS; Franco, N; O'Donnell, KP; Darakchieva, V; Alves, E; Trager-Cowan, C; et al. "Europium doping of zincblende GaN by ion implantation". Journal of Applied Physics 105 11 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000267053200040&KeyUID=WOS:000267053200040. 10.1063/1.3138806 Wang, K; O'Donnell, KP; Hourahine, B; Martin, RW; Watson, IM; Lorenz, K; Alves, E. "Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range". Physical Review B 80 12 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000270383300062&KeyUID=WOS:000270383300062. 10.1103/PhysRevB.80.125206 Roqan, IS; O'Donnell, KP; Martin, RW; Trager-Cowan, C; Matias, V; Vantomme, A; Lorenz, K; Alves, E; Watson, IM. "Optical and structural properties of Eu-implanted InxAl1-xN". Journal of Applied Physics 106 8 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000271358100030&KeyUID=WOS:000271358100030. 10.1063/1.3245386 Tasco, V; Campa, A; Tarantini, I; Passaseo, A; Gonzalez-Posada, F; Redondo-Cubero, A; Lorenz, K; Franco, N; Munoz, E. "Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers". Journal of Applied Physics 105 6 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000264774000071&KeyUID=WOS:000264774000071. 10.1063/1.3093700 Geruschke, T; Lorenz, K; Alves, E; Vianden, R. "Lattice location and annealing studies of Hf implanted CaF2". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 267 8-9 (2009): 1472-1475. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000266519900065&KeyUID=WOS:000266519900065. 10.1016/j.nimb.2009.01.151 Darakchieva, V; Barradas, NP; Xie, MY; Lorenz, K; Alves, E; Schubert, M; Persson, POA; et al. "Role of impurities and dislocations for the unintentional n-type conductivity in InN". Physica B-Condensed Matter 404 22 (2009): 4476-4481. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000272104000034&KeyUID=WOS:000272104000034. 10.1016/j.physb.2009.09.042 Schmitz, J; Niederhausen, J; Penner, J; Lorenz, K; Alves, E; Vianden, R. "Stable In-defect complexes in GaN and AlN". Physica B-Condensed Matter 404 23-24 (2009): 4866-4869. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000276029300100&KeyUID=WOS:000276029300100. 10.1016/j.physb.2009.08.181 Bodiou, L; Braud, A; Doualan, JL; Moncorge, R; Park, JH; Munasinghe, C; Steckl, AJ; et al. "Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots". Journal of Applied Physics 105 4 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000263803300004&KeyUID=WOS:000263803300004. 10.1063/1.3078783 Wendler, E; Bilani, O; Gartner, K; Wesch, W; Hayes, M; Auret, FD; Lorenz, K; Alves, E. "Radiation damage in ZnO ion implanted at 15 K". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 267 16 (2009): 2708-2711. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000272422400035&KeyUID=WOS:000272422400035. 10.1016/j.nimb.2009.05.031 Lorenz, K; Barradas, NP; Alves, E; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; et al. "Structural and optical characterization of Eu-implanted GaN". Journal of Physics D-Applied Physics 42 16 (2009): 307-310. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000268553600012&KeyUID=WOS:000268553600012. 10.1088/0022-3727/42/16/165103 Bodiou, L; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K; Alves, E. "Two colour experiments in Eu3+ implanted GaN". Journal of Alloys and Compounds 451 1-2 (2008): 140-142. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000253600400030&KeyUID=WOS:000253600400030. 10.1016/j.jallcom.2007.04.133 Nogales, E; Garcia, JA; Mendez, B; Piqueras, J; Lorenz, K; Alves, E. "Visible and infrared luminescence study of Er doped beta-Ga2O3 and Er3Ga5O12". Journal of Physics D-Applied Physics 41 6 (2008): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000254153900039&KeyUID=WOS:000254153900039. 10.1088/0022-3727/41/6/065406 Lorenz, K; Franco, N; Alves, E; Pereira, S; Watson, IM; Martin, RW; O'Donnell, KP. "Relaxation of compressively strained AlInN on GaN". Journal of Crystal Growth 310 18 (2008): 4058-4064. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000259791100007&KeyUID=WOS:000259791100007. 10.1016/j.jcrysgro.2008.07.006 Schmitz, J; Penner, J; Lorenz, K; Vianden, R. "Temperature dependent site change of In in AIN and GaN". Physica Status Solidi a-Applications and Materials Science 205 1 (2008): 93-95. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252877300022&KeyUID=WOS:000252877300022. 10.1002/pssa.200777453 Gloux, F; Ruterana, P; Lorenz, K; Alves, E. "A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C". Materials Science and Engineering B-Solid State Materials For Advanced Technology 146 1-3 (2008): 204-207. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252668300045&KeyUID=WOS:000252668300045. 10.1016/j.mseb.2007.07.019 Lorenz, K; Marques, JG; Franco, N; Alves, E; Peres, M; Correia, MR; Monteiro, T. "Defect studies on fast and thermal neutron irradiated GaN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 266 12-13 (2008): 2780-2783. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000257721300027&KeyUID=WOS:000257721300027. 10.1016/j.nimb.2008.03.116 Gloux, F; Ruterana, P; Lorenz, K; Alves, E. "A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation". Physica Status Solidi a-Applications and Materials Science 205 1 (2008): 68-70. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252877300017&KeyUID=WOS:000252877300017. 10.1002/pssa.200776708 Wang, K; Martin, RW; Amabile, D; Edwards, PR; Hernandez, S; Nogales, E; O'Donnell, KP; et al. "Optical energies of AlInN epilayers". Journal of Applied Physics 103 7 (2008): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000255043200018&KeyUID=WOS:000255043200018. 10.1063/1.2898533 Lorenz, K; Alves, E; Roqan, IS; Martin, RW; Trager-Cowan, C; O'Donnell, KP; Watson, IM. "Rare earth doping of III-nitride alloys by ion implantation". Physica Status Solidi a-Applications and Materials Science 205 1 (2008): 34-37. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252877300009&KeyUID=WOS:000252877300009. 10.1002/pssa.200776714 Roqan, IS; O'Donnell, KP; Trager-Cowan, C; Hourahine, B; Martin, RW; Lorenz, K; Alves, E; et al. "Luminescence spectroscopy of Eu-implanted zincblende GaN". Physica Status Solidi B-Basic Solid State Physics 245 1 (2008): 170-173. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252710500026&KeyUID=WOS:000252710500026. 10.1002/pssb.200743372 Hums, C; Blasing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K; Alves, E. "Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (vol 90, art no 022105, 2007)". Applied Physics Letters 91 2 (2007): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000249787000120&KeyUID=WOS:000249787000120. 10.1063/1.2785981 Bodiou, L; Braud, A; Terpin, C; Doualan, JL; Moncorge, R; Lorenz, K; Alves, E. "Spectroscopic investigation of implanted epilayers of Tm3+ : GaN". Journal of Luminescence 122 (2007): 131-133. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000242991900040&KeyUID=WOS:000242991900040. 10.1016/j.jlumin.2006.01.124 Magalhaes, S; Lorenz, K; Peres, M; Monteiro, T; Tripathy, S; Alves, E. "Implantation of nanoporous GaN with eu ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 257 (2007): 328-331. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000246165500075&KeyUID=WOS:000246165500075. 10.1016/j.nimb.2007.01.027 Lorenz, K; Geruschke, T; Alves, E; Vianden, R. "Temperature dependence of the electric field gradient in GaN measured with the PAC-probe Hf-181". Hyperfine Interactions 177 1-3 (2007): 89-95. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000260182900013&KeyUID=WOS:000260182900013. 10.1007/s10751-008-9708-7 Lorenz, K; Franco, N; Alves, E; Watson, IM; Martin, RW; O'Donnell, KP. "Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state". Physical Review Letters 97 8 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240043800033&KeyUID=WOS:000240043800033. 10.1103/PhysRevLett.97.085501 Gloux, F.; Wójtowicz, T.; Ruterana, P.; Lorenz, K.; Alves, E.; Gloux, F; Wojtowicz, T; et al. "Behaviour of the AlN cap during GaN implantation of rare earths and annealing". Physica Status Solidi (A) Applications and Materials Science 203 9 (2006): 2172-2175. http://www.scopus.com/inward/record.url?eid=2-s2.0-33746325177&partnerID=MN8TOARS. 10.1002/pssa.200566034 Marques, JG; Lorenz, K; Franco, N; Alves, E. "Defect production in neutron irradiated GaN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 249 (2006): 358-361. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000239545000087&KeyUID=WOS:000239545000087. 10.1016/j.nimb.2006.04.028 Roqan, IS; Lorenz, K; O'Donnell, KP; Trager-Cowan, C; Martin, RW; Watson, IM; Alves, E. "Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN". Superlattices and Microstructures 40 4-6 (2006): 445-451. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200041&KeyUID=WOS:000243208200041. 10.1016/j.spmi.2006.07.029 Wang, K; Martin, RW; Nogales, E; Edwards, PR; O'Donnell, KP; Lorenz, K; Alves, E; Watson, IM. "Cathodoluminescence of rare earth implanted AlInN". Applied Physics Letters 89 13 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240875800042&KeyUID=WOS:000240875800042. 10.1063/1.2357343 Lorenz, K; Wahl, U; Alves, E; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; et al. "High temperature annealing of rare earth implanted GaN films: Structural and optical properties". Optical Materials 28 6-7 (2006): 750-758. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500037&KeyUID=WOS:000236916500037. 10.1016/j.optmat.2005.09.015 Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K; Alves, E. "Effect of annealing temperature on luminescence in Eu implanted GaN". Optical Materials 28 6-7 (2006): 780-784. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500043&KeyUID=WOS:000236916500043. 10.1016/j.optmat.2005.09.022 Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K; Alves, E; Ruffenach, S; Briot, O. "Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing". Applied Physics Letters 88 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000234757100013&KeyUID=WOS:000234757100013. 10.1063/1.2162797 Lorenz, K; Alves, E; Monteiro, T; Soares, MJ; Peres, M; Smulders, PJM. "Optical doping of AlN by rare earth implantation". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 242 1-2 (2006): 307-310. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236225200081&KeyUID=WOS:000236225200081. 10.1016/j.nimb.2005.08.037 Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K; et al. "Optical properties of high-temperature annealed Eu-implanted GaN". Optical Materials 28 6-7 (2006): 797-801. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500047&KeyUID=WOS:000236916500047. 10.1016/j.optmat.2005.09.026 Hernandez, S; Cusco, R; Artus, L; Nogales, E; Martin, RW; O'Donnell, KP; Halambalakis, G; et al. "Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation". Optical Materials 28 6-7 (2006): 771-774. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500041&KeyUID=WOS:000236916500041. 10.1016/j.optmat.2005.09.021 Peres, M; Cruz, A; Soares, MJ; Neves, AJ; Monteiro, T; Lorenz, K; Alves, E. "Optical and structural studies in Eu-implanted AlN films". Superlattices and Microstructures 40 4-6 (2006): 537-544. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200057&KeyUID=WOS:000243208200057. 10.1016/j.spmi.2006.07.031 Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E. "TEM investigation of Tm implanted GaN, the influence of high temperature annealing". Optical Materials 28 6-7 (2006): 738-741. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500034&KeyUID=WOS:000236916500034. 10.1016/j.optmat.2005.09.012 Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K; Alves, E. "The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer". Superlattices and Microstructures 40 4-6 (2006): 300-305. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200018&KeyUID=WOS:000243208200018. 10.1016/j.spmi.2006.07.016 Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K; Alves, E; Gloux, F.; Ruterana, P.; et al. "Rare earth ion implantation in GaN: Damage formation and recovery". Acta Physica Polonica a 110 2 (2006): 125-137. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240446200004&KeyUID=WOS:000240446200004. 10.12693/APhysPolA.110.125 Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E. "Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN". Physica Status Solidi B-Basic Solid State Physics 243 7 (2006): 1541-1544. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000238752200027&KeyUID=WOS:000238752200027. 10.1002/pssb.200565256 Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K; Alves, E. "Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation". Journal of Applied Physics 100 7 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000241248000031&KeyUID=WOS:000241248000031. 10.1063/1.2357845 Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K; Alves, E. "UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers". Superlattices and Microstructures 40 4-6 (2006): 440-444. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200040&KeyUID=WOS:000243208200040. 10.1016/j.spmi.2006.06.020 Lorenz, K; Alves, E; Wendler, E; Bilani, O; Wesch, W; Hayes, M. "Damage formation and annealing at low temperatures in ion implanted ZnO". Applied Physics Letters 87 19 (2005): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000233058800017&KeyUID=WOS:000233058800017. 10.1063/1.2126137 Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K; Alves, E; Ruffenach, S; Briot, O. "Selectively excited photoluminescence from Eu-implanted GaN". Applied Physics Letters 87 11 (2005): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000231802200031&KeyUID=WOS:000231802200031. 10.1063/1.2045551 Lorenz, K; Vianden, R. "Anomalous temperature dependence of the EFG in AlN measured with the PAC-probes Hf-181 and In-111". Hyperfine Interactions 158 1-4 (2004): 273-279. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000235281400044&KeyUID=WOS:000235281400044. 10.1007/s10751-005-9044-0 Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K; et al. "Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy". Superlattices and Microstructures 36 4-6 (2004): 713-719. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000225762800038&KeyUID=WOS:000225762800038. 10.1016/j.spmi.2004.09.027 Lorenz, K; Wahl, U; Alves, E; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O. "Amorphisation of GaN during processing with rare earth ion beams". Superlattices and Microstructures 36 4-6 (2004): 737-745. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000225762800041&KeyUID=WOS:000225762800041. 10.1016/j.spmi.2004.09.030 Katchkanov, V.; Mosselmans, J.F.W.; Dalmasso, S.; O'Donnell, K.P.; Hernandez, S.; Wang, K.; Martin, R.W.; et al. "Extended X-ray absorption fine structure studies of thulium doped GaN epilayers". Superlattices and Microstructures 36 4-6 (2004): 729-736. http://www.scopus.com/inward/record.url?eid=2-s2.0-10044293362&partnerID=MN8TOARS. 10.1016/j.spmi.2004.09.029 Lorenz, K; Wahl, U; Alves, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O. "High-temperature annealing and optical activation of Eu-implanted GaN". Applied Physics Letters 85 14 (2004): 2712-2714. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000224547300012&KeyUID=WOS:000224547300012. 10.1063/1.1801686 Lorenz, K; Alves, E; Wahl, U; Monteiro, T; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R. "Implantation and annealing studies of Tm-implanted GaN". Materials Science and Engineering B-Solid State Materials For Advanced Technology 105 1-3 (2003): 97-100. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000187457300023&KeyUID=WOS:000187457300023. 10.1016/j.mseb.2003.08.023 Wahl, U; Alves, E; Lorenz, K; Correia, JG; Monteiro, T; De Vries, B; Vantomme, A; Vianden, R. "Lattice location and optical activation of rare earth implanted GaN". Materials Science and Engineering B-Solid State Materials For Advanced Technology 105 1-3 (2003): 132-140. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000187457300031&KeyUID=WOS:000187457300031. 10.1016/j.mseb.2003.08.031 Narayanan, V.; Lorenz, K.; Kim, W.; Mahajan, S.. "Gallium nitride epitaxy on (0001) sapphire". Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 82 5 (2002): 885-912. http://www.scopus.com/inward/record.url?eid=2-s2.0-0037139813&partnerID=MN8TOARS. 10.1080/01418610110095698 Lorenz, K; Ruske, F; Vianden, R. "Reversible changes in the lattice site structure for In implanted into GaN". Applied Physics Letters 80 24 (2002): 4531-4533. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000176128100017&KeyUID=WOS:000176128100017. 10.1063/1.1485117 Lorenz, K; Ruske, F; Vianden, R. "Annealing behaviour of GaN after implantation with hafnium and indium". Physica Status Solidi B-Basic Research 228 1 (2001): 331-335. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172513100071&KeyUID=WOS:000172513100071. Alves, E; Lorenz, K; Vianden, R; Boemare, C; Soares, MJ; Monteiro, T; Alves, E.; et al. "Optical doping of nitrides by ion implantation". Modern Physics Letters B 15 28-29 (2001): 1281-1287. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000173764500003&KeyUID=WOS:000173764500003. 10.1142/S0217984901003172 Monteiro, T; Boemare, C; Soares, MJ; Ferreira, RAS; Carlos, LD; Lorenz, K; Vianden, R; Alves, E. "Photoluminescence and lattice location of Eu and Pr implanted GaN samples". Physica B-Condensed Matter 308 (2001): 22-25. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000173660100006&KeyUID=WOS:000173660100006. 10.1016/S0921-4526(01)00656-1 Bartels, J; Lorenz, K; Ruske, F; Tessema, G; Vianden, R; Bartels, J.; Lorenz, K.; et al. "Dopants in semiconductors studied by perturbed angular correlation". Acta Physica Polonica a 100 5 (2001): 585-602. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172729900002&KeyUID=WOS:000172729900002. 10.12693/APhysPolA.100.585 Wruck, D; Lorenz, K; Vianden, R; Reinhold, B; Mahnke, HE; Baranowski, JM; Pakula, K; et al. "Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films". Semiconductor Science and Technology 16 11 (2001): L77-L80. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172222400001&KeyUID=WOS:000172222400001. 10.1088/0268-1242/16/11/101 Lorenz, K; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM; Lorenz, K.; Vianden, R.; et al. "Defect trapping and annealing for transition metal implants in group III nitrides". Mrs Internet Journal of Nitride Semiconductor Research 5 5 (2000): 1-7. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000090104500001&KeyUID=WOS:000090104500001. Lorenz, K; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E. "RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 161 (2000): 946-951. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000086204100179&KeyUID=WOS:000086204100179. 10.1016/S0168-583X(99)00683-7
Capítulo de livro	Jozwik, Przemyslaw; Nowicki, Lech; Ratajczak, Renata; Mieszczynski, Cyprian; Stonert, Anna; Turos, Andrzej; Lorenz, Katharina; Alves, Eduardo. "Advanced Monte Carlo Simulations for Ion-Channeling Studies of Complex Defects in Crystals". In Theory and Simulation in Physics for Materials Applications, 133-160. Springer International Publishing, 2020. 10.1007/978-3-030-37790-8_8 Lorenz, Katharina. "Implantation damage formation in GaN and ZnO” Chapter in “Ion Implantation". In Ion Implantation. INTECH, 2012. Lorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.. "RE implantation and annealing of III-nitrides". 2010. 10.1007/978-90-481-2877-8_2
Poster em conferência	Magalhães Esteves, Duarte ; Cardoso Pedro, Miguel; Pereira, Daniela R.; Magalhães, Sérgio; Rodrigues, Ana Luísa; Cerqueira, Luís; Luís F. Santos ; et al. Autor correspondente: Magalhães Esteves, Duarte. "Ion-implanted ß-Ga2O3: from nanomembrane fabrication to photonic applications". Trabalho apresentado em Local Photonics Meetup 2023, 2023. Magalhães Esteves, Duarte ; Pedro, M. C.; Pereira, Daniela R.; Magalhães, Sérgio; Alves, LC; Luís F. Santos ; Lorenz, Katharina; Peres, Marco. Autor correspondente: Magalhães Esteves, Duarte. "A novel approach for ß-Ga2O3 nanomembrane fabrication using ion implantation". Trabalho apresentado em 21st International Conference of Radiation Effects in Insulators, 2023. Antunes, André M.; Hussain, Mukhtar; Alves, Joana; Vaz, Gonçalo; Pires, Hugo; Peres, Marco; Lorenz, Katharina; et al. "Shining light on solids: a TDDFT study of solid-state HHG". 2023. 10.1117/12.2665519 Kishor Upadhyaya; Fatimah Alreshidi ; Hadeel Alamoudi ; Magalhães Esteves, Duarte ; Peres, Marco; K. Lorenz; Iman Roqan. "Effect of Sn+ ion implantation and post-annealing on enhancing ß-Ga2O3¿ based DUV self-powered photodetector performance". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023. Zanoni, Julia; Correia, Maria Rosário; Peres, Marco; Magalhães Esteves, Duarte ; Lorenz, Katharina; Monteiro, Teresa; Rodrigues, Joana Catarina Ferreira. Autor correspondente: Rodrigues, Joana Catarina Ferreira. "Optically active centres in Pr-implanted ß-Ga2O3 single crystals". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023. Batista, Maria; Magalhães Esteves, Duarte ; Rodrigues, Ana Luísa; Marques Dias, Maria Isabel; Alves, LC; Alves, Eduardo; Costa, Florinda; et al. Autor correspondente: Peres, Marco. "Ionizing radiation detection and dosimetric applications of Cr- doped Zinc Gallogermanate". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023. Verheij, Dirkjan; Alves, Luís Cerqueira; Vicentijevic, Milan; Jaksic, Milko; Peres, Marco; Cardoso, Susana; Alves, Eduardo; et al. "Ion beam induced current analysis in GaN core-shell p-n junction microwires". Trabalho apresentado em ICNMTA 2022, 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Cr-doped ß- Ga2O3: Luminescence activation by irradiation-induced defects". Trabalho apresentado em Física 2022, 2022. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Field effect transistors on MoO3 crystals and pseudo-layers: fabrication and characterization". Trabalho apresentado em Física 2022. Faculdade de Ciências da Universidade do Porto, Portugal., 2022. Verheij, Dirkjan; Alves, Luís Cerqueira; Peres, Marco; Cardoso, Susana; Alves, Eduardo; Durand, Christophe; Eymery, Joël; et al. "Influence of proton irradiation damage on GaN core-shell p-n junction microwire radiation detectors". Trabalho apresentado em IBMM 2022, 2022. Zanoni, Julia; Magalhães Esteves, Duarte ; Jia, Z.; Mu, W.; Alves, LC; Lorenz, Katharina; Correia, Maria Rosário; et al. Autor correspondente: Zanoni, Julia. "Kinetics and PL quenching evaluation of optically active centres in ß-Ga2O3". Trabalho apresentado em International Conference on Ion Beam Modification of Materials, 2022. Fernandes, T. P.; Magalhães Esteves, Duarte ; Alves, Luís; Santos, L. F.; Rodrigues, Ana Luísa; Maria Isabel Dias; Catarino, N.; Peres, Marco; Lorenz, Katharina. Autor correspondente: Fernandes, T. P.. "Proton irradiation effects on hexagonal boron nitride crystals". Trabalho apresentado em 22nd International Conference on Ion Beam Modification of Materials (IBMM), 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Sensitising the Cr3+ Luminescence by Irradiation-Induced Defects in ß-Ga2O3". Trabalho apresentado em 22nd International Conference on Ion Beam Modification of Materials (IBMM 2022), 2022. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Incorporation of modified MoO3 crystals and pseudo-layers into Field Effect Transistors". Trabalho apresentado em IBMM 2022 – 22nd International Conference on Ion Beam Modification of Materials. Lisbon, Portugal, 2022. J. Zanoni; D. M. Esteves; B. F. Falcão; J. P. Leitão; Z. Jia; W. Mu; L.C. Alves; et al. "Detailed spectroscopic analysis of doped ß-Ga2O3 with Si, Sn and Fe". Trabalho apresentado em Nano 2022, 2022. Zanoni, Julia; Magalhães Esteves, Duarte ; Bruno P. Falcão; Leitão, Joaquim P.; Rino, Luis; Jia, Z.; Mu, W.; et al. Autor correspondente: Zanoni, Julia. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Sn and Fe". Trabalho apresentado em NANO 2022, 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Activation of the Cr3+ luminescence in proton-irradiated ß-Ga2O3". Trabalho apresentado em 3rd Condensed Matter Physics National Conference, 2022. J. Zanoni; D. M. Esteves; B. P. Falcão; J. P. Leitão; L. Rino; Z. Jia; W. Um; et al. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Mg, Sn and Fe". Trabalho apresentado em NANO 2022 - 16th International Conference on Nanostructured Materials (ICNM), Sevilla, Spain, 2022. G. Marques; A. Carvalho; B. P. Falcão; A. J. Fernandes; S. O. Pereira; A. Brinca; F. Costa; et al. "Luminescent properties in CVD grown diamond single crystal modified by laser irradiation and ion implantation". Trabalho apresentado em IBMM 22 - 22nd International Conference on Ion Beam Modification of Materials, Lisbon, Portugal, 2022. Pereira, D. R.; C. Díaz-Guerra; Peres, António M.; S. Magalhães; J. G. Correia; E. Alves; S. Cardoso; P. P. Freitas; K. Lorenz. "Defects and electrical conductivity in ion-implanted a-MoO3 lamellar crystals". Trabalho apresentado em 13th IKZ Summer School in Oxides for Electronic Applications, 2021. N. Ben Sedrine; J. Cardoso; J. P. Teixeira; D. Nd. Faye; R. R.-Andrade; A. Gustafsson; P. M. P. Salomé; et al. "Probing the optical properties of III-V nanowires for optoelectronic applications". Trabalho apresentado em Nanowire Week 2019, 2019. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Bockowski; V. Hoffmann; M. Weyers; K. Lorenz; M. R. Correia; T. Monteiro. "MOCVD-grown AlGaN/GaN superlattice structure tailored for bright red emitting diode". Trabalho apresentado em E-MRS Spring Meeting 2019, 2019. M. C. Sequeira; H. Vazquez; J.G. Mattei; F. Djurabekova; K. Nordlund; S. Zhang; I. Monnet; et al. "Effects of Swift Heavy Ions in Group-III Nitrides – A Multidisciplinary Study". Trabalho apresentado em Radiation Effects on Isolators (REI-20), Astana, Kazakhstan, 2019. A. Redondo-Cubero; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; N. Ben Sedrine. "Optical analysis of the damage and surface roughness in nanorippled ZnO produced by ion irradiation". Trabalho apresentado em E-MRS Spring Meeting 2018, 2018. N. Ben Sedrine; J. Rodrigues; J. Cardoso; D. Nd. Faye; M. Fialho; S. Magalhães; A. J. Neves; et al. "Analysis of europium implantation and annealing -induced effects in AlGaN/GaN heterostructure". Trabalho apresentado em E-MRS Spring Meeting 2018, 2018. N. Ben Sedrine; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; A. Redondo-Cubero. "ZnO nanoripples produced by medium energy ion beam sputtering: damage and roughness evolution". Trabalho apresentado em 20th International Conference on Surface Modification of Materials by ions Beams, 2017. N. Ben Sedrine; J. Cardoso; A. Alves; A. F. Martins; J. Rodrigues; A. J. Neves; D. Nd. Faye; et al. "Study of AlxGa1-xN nanowires implanted with Eu for solid-state nano-devices". Trabalho apresentado em 12th International Conference on Nitride Semiconductors, 2017. N. Ben Sedrine; J. Rodrigues; A. F. Martins; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; et al. "Eu-implanted AlGaN/GaN diode structures towards efficient solid-state lighting". Trabalho apresentado em 12th International Conference on Nitride Semiconductors, 2017. D. Nd. Faye; M. Fialho; S. Magalhães; M. Felizardo; E. Alves; N. Ben Sedrine; J. Rodrigues; et al. "Structural, Optical and Electrical Characterization of Implanted AlGaN alloys". Trabalho apresentado em 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; A. J. Neves; et al. "Europium implantation and annealing effects in nitride LED structures". Trabalho apresentado em 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Spectroscopic analysis of TSAG and TSLAG crystals". Trabalho apresentado em IBER 2015 (Joint Iberian Meeting on Atomic and Molecular Physics), 2015. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Structural and optical properties of TSAG and TSLAG crystals grown by Czochralski". Trabalho apresentado em CSI - Colloquium Spectroscopicum Internationale XXXIX, 2015. J. Rodrigues; T. C. Esteves; N. F. Santos; M. Fialho; L. Rino; A. J. Neves; K. Lorenz; E. Alves; T. Monteiro. "Photoluminescence studies in Tm implanted AlxGa1-xN layers". Trabalho apresentado em ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; L. Rino; A. J. Neves; E. Alves; et al. "Towards white light in nitrides through defect engineering". Trabalho apresentado em ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015. M. C. Sequeira; M. B. Lourenço; A. Redondo-Cubero; N. Franco; E. Alves; M. F. Leitão; J. Rodrigues; et al. "Quantum Well Intermixing in InGaN/GaN Structures". Trabalho apresentado em ICDS 28th International Conference on Defects in Semiconductors, 2015. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN nanowires implanted with Eu3+ ions for solid-state light emission". Trabalho apresentado em E-MRS Spring Meeting 2015, 2015. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; M. J. Soares; A. J. Neves; E. Alves; et al. "Room temperature white light emission in annealed III-nitride multi quantum wells". Trabalho apresentado em E-MRS Spring Meeting 2015, 2015. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN:Eu3+ nanostructures for red solid state lighting". Trabalho apresentado em Research Day 2015 (University of Aveiro), 2015. M. C. Sequeira; A. Redondo-Cubero; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; A. J. Neves; et al. "Swift Heavy Ion Interaction with Group-III Nitrides". Trabalho apresentado em International Conference on Defects in Semiconductors (ICDS 2015), Espoo, Finland, 2015. M. Fialho; T. C. Esteves; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of AlGaN Films Doped with Rare Earth Ions". Trabalho apresentado em EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014. M.B. Lourenço; A. Redondo-Cubero; M. C. Sequeira; N. Franco; E. Alves; M. Sousa; T. C. Esteves; et al. "High Thermal Stability of InGaN/GaN Quantum Wells". Trabalho apresentado em EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014. M. Fialho; D. N. Faye; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of the effect of implantation temperature on AlGaN compounds implanted with rare earth ions". Trabalho apresentado em IBMM 2014 - 19th International Conference on Ion Beam Modification of Materials, 2014. M. Sousa; T. C. Esteves; J. Rodrigues; M. B. Lourenço; S.M.C. Miranda; N. Ben Sedrine; A. Redondo-Cubero; et al. "Influence of the nitrogen implantation and thermal annealing on the structural and optical properties of the green emitting InGaN/GaN MQWs". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014. M. Felizardo; M. Peres; N. Franco; D. N. Faye; E. Alves; K. Lorenz; E. Nogales; et al. "Structural and Optical Properties of GaN Nanowires and Thin Films Implanted with Eu". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Materials), 2014. J. F. C. Carreira; M. F. Leitão; J. Rodrigues; N. Ben Sedrine; M. Peres; M. Felizardo; N. Franco; et al. "Optical Studies in Eu doped ß-Ga2O3 nanostructures". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014. J. Rodrigues; M. Fialho; S. Magalhães; M. R. Correia; L. Rino; E. Alves; A. J. Neves; K. Lorenz; T. Monteiro. "Spectroscopic characteristics of Tb3+ ions in AlxGa1-xN (0=x=1) layers". Trabalho apresentado em ICL’14 (17th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter), 2014. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Structural and optical characterization of AlxGa1-xN alloys doped with Rare Earth ions". Trabalho apresentado em E-MRS Spring Meeting 2014, 2014. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Optical and structural characterization of heat treated InGaN/GaN SQW and MQW for quantum well intermixing". Trabalho apresentado em E-MRS Spring Meeting 2014, 2014. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Effect of AlN content on the optical and structural properties of Rare Earth implanted AlGaN compounds". Trabalho apresentado em MRS Spring Meeting 2014, 2014. J. Rodrigues; S.M.C. Miranda; A. J. S. Fernandes; L. C. Alves; E. Alves; A. J. Neves; G. Tourbot; et al. "Luminescence sensing based on GaN NWs implanted with lanthanide ions". Trabalho apresentado em NanoPT 2014, 2014. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Investigation of the effects of heat treatments on InGaN/GaN single and multiple quantum wells (SQW, MQWs) for quantum well intermixing (QWI)". Trabalho apresentado em NanoPT 2014, 2014. J. Rodrigues; S.M.C. Miranda; A.J.S. Fernandes; E. Nogales; L.C. Alves; E. Alves; A. J. Neves; et al. "Luminescence studies in GaN nanowires implanted with lanthanide ions". Trabalho apresentado em Research day 2013 (University of Aveiro), 2013. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural studies of AlxGa1-xN alloys doped with Tm and Pr rare earth ions". Trabalho apresentado em Congresso Materiais 2013, 2013. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural characterization of AlxGa1-xN alloys doped with terbium rare earth ions". Trabalho apresentado em E-MRS Spring Meeting 2013, 2013. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Nogales; B. Méndez; J. Rodrigues; T. Monteiro; B. Lacroix. "Damage formation in non-polar GaN when host for rare earth ions". Trabalho apresentado em Física 2012- 18ª Conferência Nacional de Física (CNF), 2012. N. F. Santos; A. J. S. Fernandes; L.C. Alves; E. Alves; K. Lorenz; F. M. Costa; T. Monteiro. "Microprobe analysis, iono- and photo- luminescence of manganese activated ZnGa2O4 fibres". Trabalho apresentado em 13th International Conference Nuclear Microprobe Technology & Applications (ICNMTA 2012), 2012. J. Rodrigues; S. M. C. Miranda; N. F. Santos; A. J. Neves; E. Alves; K. Lorenz; T. Monteiro. "GaN and AlN layers co-doped with Eu and Pr ions for solid state lighting applications". Trabalho apresentado em i3N Meeting 2012, 2012. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Alves; E. Nogales; B. Méndez; et al. "Non-polar GaN as host for rare earth ions". Trabalho apresentado em ICNS-9 (9th International Conference on Nitride Semiconductors), 2011. M.-Y. Xie; V. Darakchieva; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz. "Doping of AlN micro-and nanorods with Eu3+". Trabalho apresentado em ICNS-9 (9th International Conference on Nitride Semiconductors), 2011. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; K. Lorenz; et al. "Influence of neutron irradiation and annealing on the structural and optical properties of GaN". Trabalho apresentado em E-MRS Spring Meeting 2011, 2011. M.-Y. Xie; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz; V. Darakchieva. "Optical Doping of AlN Micro- and Nanorods by Rare Earth Ions Micro". Trabalho apresentado em IWN 2010 (International Workshop on Nitride Semiconductors), 2010. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; E. Alves; et al. "The role of the annealing temperature on the optical and structural properties of Eu doped GaN QDs/AlN SL". Trabalho apresentado em E-MRS Spring Meeting 2010, 2010.
Tese / Dissertação	Lorenz, Katharina. "Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)". Doutoramento, 2002. Lorenz, Katharina. "Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)". Mestrado, 1998.

Atividades

Orientação

	Título / Tema Papel desempenhado	Curso (Tipo) Instituição / Organização
2024 - 2024	Optimizing Gallium Oxide Thin Films for Electro-Optical Applications Coorientador de Ana Sofia Camões de Sousa
2024 - 2024	Morphological and electrical surfaces characterization of MEMS Inertial sensor submitted to Aging stress test Coorientador de Rafael José Santana Pinto de Morais Manso,	MEMat Politecnico di Milano, Itália Universidade de Lisboa Instituto Superior Técnico, Portugal
2018 - 2024	Funcionalização do MoO3 por Engenharia de Defeitos Orientador de Daniela Filipa Rodrigues Pereira	Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 - 2023	Ga2O3 membrane nanodevices Coorientador de Miguel Cardoso Pedro
2022 - 2023	Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations Orientador de Luís Filipe Dias Vítor Martins
2021 - 2023	Ga2O3 field effect transistors for sensor applications Coorientador de Miguel Eduardo Dias Vítor Martins	Universidade de Lisboa Instituto Superior Técnico, Portugal
2018 - 2023	Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance Orientador de Dirkjan Verheij	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Two-dimensional MoO3 for sensor applications Coorientador de João Guilherme Monteiro Correia	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Proton Irradiation effects on nanomembranes and FETs based on h-BN Coorientador de Tiago Pardal Fernandes	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2021	Cr-doped Ga2O3 for radiation detection Coorientador de Duarte Magalhães Esteves	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2021	Group-III Nitrides Response to Strongly Ionising Radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Orientador de Miguel Pereira Carvalho Alves de Sequeira	Universidade de Lisboa Instituto Superior Técnico, Portugal
2015 - 2021	Post-doc project: Engenharia de defeitos e funcionalização de semicondutores de largo hiato energético Orientador de Marco António Baptista Peres	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2019	PV plant performance data analysis and modelling Coorientador de Francesca Martin	Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - 2018	Measuring strain caused by ion implantation in GaN Orientador de Pedro José de Sousa Mendes	Universidade de Lisboa Instituto Superior Técnico, Portugal
2013 - 2018	Ion implantation in AlxGa1-xN alloys and GaN nanostructures Orientador de Djibril Nd. Faye	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017	Radiation sensors based on GaN microwires Orientador de Dirkjan Verheij	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017	Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação Orientador de Daniela Filipa Rodrigues Pereira	Universidade Nova de Lisboa, Portugal
2015 - 2016	Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications Orientador de Flávia Cristina Monteiro Rocha	Universidade Nova de Lisboa, Portugal
2013 - 2014	Post-doc project: Implantation of rare earths in GaN nanowires Orientador de Miguel António Felizardo da Costa	Universidade de Lisboa Instituto Superior Técnico, Portugal
2011 - 2014	Post-doc project: Modification and characterization of advanced wide bandgap semiconductor nanostructures by ion beam techniques Orientador de Andrés Redondo-Cubero	Universidade de Lisboa Instituto Superior Técnico, Portugal
2009 - 2013	Caracterização e modificação de heteroestruturas de nitretos do grupo III Orientador de Sérgio Nuno Canteiro de Magalhães	Universidade de Aveiro, Portugal
2010 - 2011	Implantação de terras raras em GaN com orientação polar e não-polar Orientador de Norberto José Sobral Catarino	Universidade de Lisboa Faculdade de Ciências, Portugal

Organização de evento

	Nome do evento Tipo de evento (Tipo de participação)	Instituição / Organização
2024 - 2024	Session “Characterization and defects in crystalline materials”, 8th European Conference on Crystal Growth ECCG 2024, 21-25 July Warsaw, Poland (2024/07/21 - 2024/07/25)
2023 - 2023	Co-Chair: Mini-Colloquium on “Tuning materials properties through controlled disorder” at the conference of the conference of the Condensed Matter Division of the European Physical Society, CMD30, September 4-8, 2023, Milan, Italy. (2023/09/04 - 2023/09/08)
2022/07/05 - 2022/07/10	22th IBMM - Ion Beam Modification of Materials, (2022/07/05 - 2022/07/10) Conferência (Coorganizador)
2022 - 2022	Symposium “Defects, doping and processing of semiconductor nanostructures”, at the 16th International Conference on Nanostructures Materials – NANO2022, June 6-10, 2022, Seville, Spain. (2022 - 2022) Conferência (Coorganizador)
2022 - 2022	16th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 3-6, 2022, Ponta Delgada, Portugal. The conference was held together with the 45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe. (2022 - 2022) Conferência (Coorganizador)
2019/06/17 - 2019/06/19	Workshop Ion Beams Meet Semiconductors (SMIB 2019) (2019/06/17 - 2019/06/19) Conferência (Presidente da Comissão Organizadora)
2018/07/04 - 2018/07/06	Symposium Wide-bandgap semiconductors, 1st Iberian Meeting on Materials Science (2018/07/04 - 2018/07/06) Conferência (Coorganizador)
2018/06/18 - 2018/06/22	Symposium “New developments in the modelling and analysis of radiation damage in materials”, EMRS Spring Meeting (2018/06/18 - 2018/06/22) Conferência (Coorganizador)
2016/06/06 - 2016/06/10	13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (2016/06/06 - 2016/06/10) Conferência (Coorganizador)
2015/06/25 - 2015/06/26	Workshop Ion Beams Meet Semiconductors (SMIB 2015), (2015/06/25 - 2015/06/26) Conferência (Presidente da Comissão Organizadora)
2015/04/21 - 2015/04/25	Symposium Advanced Characterization Techniques for Ion-Beam-Induced Effects in Materials, MRS Spring Meeting (2015/04/21 - 2015/04/25) Conferência (Coorganizador)
2013/05/27 - 2013/05/31	Symposium Functional Nanowires: Synthesis, Characterization and Applications, EMRS Spring Meeting (2013/05/27 - 2013/05/31) Conferência (Coorganizador)
2008/04/01 - 2008/04/03	International Workshop on New Trends and Applications of Ion Beams (NTAIB-2008) (2008/04/01 - 2008/04/03) Conferência (Coorganizador)

Participação em evento

	Descrição da atividade Tipo de evento	Nome do evento Instituição / Organização
2024 - 2024	Invited talk: Ion irradiation of wide bandgap semiconductors: Defect engineering and radiation detection: Mini-Colloquium on “Materials' morphology alteration by using state-of-the-art techniques: experiments, simulations and theoretical models” at the conference of the conference of the Condensed Matter Division of the European Physical Society, CMD31, September 2-6, 2024, Braga, Portugal. Conferência
2024 - 2024	Invited talk: Ion beam analysis and modification of group III nitride epitaxial structures: European Workshop on Innovative and Advanced Epitaxy, OPERA COSTAction, 11-14 June 2024 Vilnius, Lithuania Oficina (workshop)
2023 - 2023	Invited talk: Defect Engineering in Wide Bandgap Semiconductors: 25th International Conference on Ion-Surface Interactions ISI-2023, on-line participation, August 21-25, 2023. Conferência	25th International Conference on Ion-Surface Interactions
2023 - 2023	Invited talk: 4. Radiation Effects in Wide Bandgap Materials: 51st International School & Conference on the Physics of Semiconductors Jaszowiec 2023, Szczyrk, Poland, June 17-23, 2023 Conferência	Conference on the Physics of Semiconductors Jaszowiec 2023
2023 - 2023	Invited talk: Research at the Portuguese Ion Beam Laboratory: Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits, International Atomic Energy Agency, IAEA December 11, 2023 Encontro	Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits International Atomic Energy Agency, Áustria
2023 - 2023	Invited talks: Radiation Sensors Based on Novel Wide Bandgap Semiconductor Structures: 28th International Conference on Nuclear Tracks & Radiation Measurements (ICNTRM), 6-10 November 2023, Gurugram University, Haryana, India Conferência	International Conference on Nuclear Tracks & Radiation Measurements
2023 - 2023	Invited talk: Ion Beam Processing of Quasi-2D Oxides: 7th International Conference on Nanostructuring by Ion Beams (ICNIB 2023) November 2-4, 2023, UPES Dehradun, India Conferência	International Conference on Nanostructuring by Ion Beams
2022 - 2022	Invited talk: Ion implantation and defect engineering in wide bandgap semiconductor nanostructures, Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials, Warsaw, Poland, September 19-22, 2022. Conferência	Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials,
2022 - 2022	Radiation effects in gallium oxide, Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics, Warsaw, Poland, September 19-22, 2022. Conferência	Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics
2021/01/21 - 2021/01/21	Invited Webinar: Ion Implantation and Radiation Effects in Gallium Nitride Oficina (workshop)	EMIRUM 2021, @ EMIR Users Meeting Polytechnique Palaiseau, France
2021 - 2021	Plenary Talk Ion implantation and radiation effects in group-III nitride semiconductors Conferência	Applied Nuclear Physics Conference, ANPC2021, Prague, Czech Republic, September 12-16, 2021.
2021 - 2021	Invited Talk: Ion beams for the development of radiation resistant semiconductors Conferência	Particles and Nuclei International Conference, PANIC2021, virtual conference, Lisbon, Portugal, September 5-10, 2021.
2021 - 2021	Invited Talk: Radiation effects in wide bandgap semiconductors Conferência	Spring Meeting of the European Materials Research Society (E-MRS), Symposium L: New developments in the modelling and analysis of radiation damage in materials II, Strasbourg, France, May 31-June 3, 2021.
2021 - 2021	Invited Talk: Radiation sensors based on GaN microwires Conferência	25th International Conference on Ion-Surface Interactions ISI-2021, Yaroslavl, Russia, August 23-27, 2021.
2021 - 2021	Invited Webinar: Ion beam modification of ß-Ga2O3 Seminário	Webinar at the research network GraFOx, Berlin, Germany, June 17, 2021.
2021 - 2021	Invited Lecture: Tailoring material properties by ion implantation Outro	Virtual Spring School on Ion Beam Modification of Materials of the European project RADIATE, Instituto Superior Técnico, April 28-30, 2021.
2020 - 2020	Invited Webinar: Ion beams in III-nitride research: Doping, characterisation and radiation resistant electronics, Semi-talk Webinar, King Abdullah University of Science and Technology, Saudi Arabia	King Abdullah University of Science and Technology, Arábia Saudita
2018 - 2018	Invited Talk Ion implantation and iono-luminescence studies in ß-Ga2O3 Conferência	SPIE Photonics West: Oxide-based Materials and Devices IX, San Francisco, USA, January 27 – February 1, 2018
2017 - 2017	Invited Talk Europium doping of Ga2O3 by ion implantation Conferência	23rd International Conference on Ion-Surface Interactions (ISI-2017), Moscow, Russia, August 21-25, 2017
2017 - 2017	Invited Talk Radiation Effects and Quantum Well Intermixing in InGaN/GaN Multi Quantum Wells Conferência	19th International Conference on Radiation Effects in Insulators (REI-19), Versailles, France, July 2-7, 2017
2017 - 2017	Invited Talk Ion implantation of GaN nanowires Conferência	FOR3NANO: Formation of 3D Nanostructures by Ion Beams, Helsinki, Finland, June 28-30, 2017
2016 - 2016	Invited Talk Ion beam modification of group-III-nitride nanostructures Conferência	20th International Conference on Ion Beam Modification of Materials (IBMM 2016), Wellington, New Zealand, October 30 - November 4, 2016
2016 - 2016	Invited Talk Compositional analysis of III-nitride ternary and quaternary alloys: Challenges and the benefit of ion beam analysis techniques Conferência	Workshop on Ion Beam Analysis in the Commercial Environment, Rotorua, New Zealand, October 26-28, 2016
2016 - 2016	Invited Talk Ion implantation in group-III nitride semiconductors Conferência	6th Ion Beam Analysis Francophone, IBAF-2016, Annecy, France, September 26-30, 2016
2016 - 2016	Invited Talk Técnicas de feixes de iões no desenvolvimento de materiais para a iluminação Conferência	20ª Conferência Nacional da Física, 26º Encontro Ibérico para o ensino da Física, Universidade do Minho, Braga, Portugal, September 8 – 10, 2016
2016 - 2016	Invited Talk Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells Conferência	SPIE Photonics West, Gallium Nitride Materials and Devices XI (Conference OE107), San Francisco, USA, February 13 – 18, 2016
2015 - 2015	Invited Talk Characterization and modification of semiconductor nanostructures by ion beams Conferência	XIII Iberian Meeting on Atomic and Molecular Physics IBER 2015, Aveiro, Portugal, September 6-9, 2015
2013 - 2013	Invited Talk Ion implantation and rare earth doping of group-III nitride semiconductors Conferência	21st International Conference on Ion-Surface Interactions ISI-2013, Yaroslavl, Russia, August 22-26, 2013
2011 - 2011	Invited Talk Rare Earth doping of III-nitrides by ion implantation: from 3D to 0D Conferência	Fall Meeting of the European Materials Research Society (E-MRS), Symposium J: Rare earth doped semiconductors and nanostructures for photonics, Warsaw, Poland, September 19 – 23, 2011
2011 - 2011	Invited Talk Radiation damage formation and annealing in GaN and ZnO Conferência	SPIE Photonics West, Oxide-based Materials and Devices II (Conference 7940), San Francisco, USA, January 22 – 27, 2011
2010 - 2010	Invited Talk Ion Beam Analysis of III-Nitride Semiconductors: From Thin Films to Nano-Structures Conferência	IX International Conference of Polish Society for Crystal Growth ICPSCG-9 and 5th International Conference on Physics of Disordered Systems PDS10, Gdansk Sobieszewo, Poland, Mai 23 – 27, 2010
2009 - 2009	Invited Talk Al1-xInxN/GaN bilayers: structure, purity and optical properties Conferência	8th International Conference on Nitride Semiconductors, ICNS-8, Jeju, Korea, October 18 – 23, 2009
2008 - 2008	Invited Talk Rare Earth implantation of III-nitride semiconductors for light emission from IR to UV Conferência	16th International Conference on Ion Beam Modification of Materials (IBMM 2008), Dresden, Germany, August 31 - September 5, 2008
2005 - 2005	Invited Talk RBS/Channelling analysis of GaN quantum dots in AlN Multilayers Conferência	XVII International Conference on Ion Beam Analysis (IBA), Seville, Spain, June 26 – July 1, 2005
2005 - 2005	Invited Talk High Temperature Annealing of Rare Earth Implanted GaN-Films: Structural and Optical Properties Conferência	Spring Meeting of the European Materials Research Society (E-MRS), Symposium C: Rare earth doped photonic materials, Strasbourg, France, May 31 – June 3, 2005

Júri de grau académico

	Tema Tipo de participação	Nome do candidato (Tipo de grau) Instituição / Organização
2024	Two- and Three-dimensional Models of Radionuclide Migration from a Near-surface Repository Arguente principal	Cristiana Das Neves Carvalhal (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2024	Funcionalização do MoO3 por Engenharia de Defeitos	Daniela Filipa Rodrigues Pereira (Doutoramento)
2023	Nanostructuring of monocrystalline ZnO with energetic ion beams for novel optical functional materials Arguente principal	Adéla Jagerová (Doutoramento) Univerzita Jana Evangelisty Purkyne v Ústí nad Labem, República Checa
2023	Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance Orientador	Dirkjan Verheij (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2023	Ga2O3 field effect transistors for sensor applications Orientador	Miguel Eduardo Dias Vítor Martins (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2023	Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations Orientador	Luís Filipe Dias Vítor Martins (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2022	Micropatterning of organic materials for photosensing devices Arguente principal	Sara Isabel Holbeche Sequeira (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2022	Irradiation of CIGS solar cells for space applications: study of tolerance and damage recovery strategies Arguente principal	João Pedro Frazão Gomes (Mestrado) Universidade de Aveiro, Portugal
2022	Optical centres modification in diamond: Eu3+ implantation and laser irradiation Arguente principal	Gabriel Santiago Marques (Mestrado) Universidade de Aveiro, Portugal
2022	Testing the radiation resistance of CIGS solar cells for space applications Orientador	João Miguel Pereira Gaspar (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2021	Combining RBS/Channeling, X-ray diffraction and atomic-scale modelling to study irradiation-induced defects and microstructural changes Arguente principal	Xin Jin (Doutoramento) Université de Limoges, França
2021	Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Orientador	Miguel Pereira Carvalho Alves de Sequeira (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2021	Cu(In,Ga)Se2 solar cells: the impact of metastability activated by post-growth annealing Arguente principal	Diogo Xavier da Cruz Amaral (Mestrado) Universidade de Aveiro, Portugal
2021	Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Orientador	Miguel Pereira Carvalho Alves de Sequeira (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2020	Spectroscopic studies of physical properties of crystalline silicon nanoparticle systems Arguente principal	Bruno Teixeira de Poças Falcão (Doutoramento) Universidade de Aveiro, Portugal
2020	Emission Channeling Lattice Location Studies in Semiconductors using Highly Pixellated Timepix Detectors Arguente principal	Eric David Bosne (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2020	Architectures based on Ga2O3 micro- and nanowires with applications in photonics Arguente principal	Manuel Alonso Orts (Doutoramento) Universidad Complutense de Madrid, Espanha
2019	Ion implantation in AlxGa1-xN alloys and GaN nanostructures Orientador	Djibril Nd. Faye (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2019	Material and process engineering for cost-effective silicon technologies Vogal	Zhengjun Liu (Doutoramento) Aalto-yliopisto, Finlândia
2019	Semiconductor Triplet Sensitizer for Triplet Fusion Upconversion Arguente principal	Frederik Eistrup (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2019	PV plant performance data analysis and modelling Orientador	Francesca Martin (Mestrado)
2018	Lattice location of impurities in Silicon Carbide Arguente principal	Ângelo Rafael Granadeiro Costa (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2018	Optical and temporal carrier dynamics investigations of III- nitrides for semiconductor lighting Arguente principal	Idris A. Ajia (Doutoramento) King Abdullah University of Science and Technology, Arábia Saudita
2018	Micro y nanoestructuras de óxido de estaño y sus nanocompuestos con óxido de grafeno: síntesis, luminiscencia y aplicaciones en energía Vogal	Félix del Prado Hurtado (Doutoramento) Universidad Complutense de Madrid, Espanha
2018	Síntese e Caracterização de 2D-MoS2 Arguente principal	Ana Rita de Campos Pereira (Mestrado) Universidade de Aveiro, Portugal
2018	Local probe studies in Jahn-Teller distorted manganites Arguente principal	Ricardo César Carvalho Teixeira (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN Arguente principal	Maria Isabel Fialho (Doutoramento) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Caracterização Ótica de Nanofios de AlN Implantados com Európio Arguente principal	José Pedro de Sousa Cardoso (Mestrado) Universidade de Aveiro, Portugal
2017	Radiation sensors based on GaN microwires Orientador	Dirkjan Verheij (Mestrado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação Orientador	Daniela Filipa Rodrigues Pereira (Mestrado) Universidade Nova de Lisboa, Portugal
2016	Estudo da luminescência de nanopartículas de ZnGa2O4:Cr3+ produzidas por Ablação por Laser Pulsado em Meio Líquido Arguente principal	Maria da Silva Relvas (Mestrado) Universidade de Aveiro, Portugal
2015	ZnO and GaN nanostructures for optoelectronic applications: synthesis and characterization Arguente principal	Joana Catarina Ferreira Rodrigues (Doutoramento) Universidade de Aveiro, Portugal
2015	Estudios de nitruros aleados mediante técnicas de haces de electrones: imagen, difracción y espectroscopía Vogal	Daniel Carvalho (Doutoramento) Universidad de Cádiz, Espanha
2015	Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications Orientador	Flávia Cristina Monteiro Rocha (Mestrado) Universidade Nova de Lisboa, Portugal
2014	Síntesis, propiedades físicas y dopado de micro- y nanoestructuras de Bi2O3 y MoO3 Arguente principal	Maria Vila Santos (Doutoramento) Universidad Complutense de Madrid, Espanha
2014	Propiedades físicas y dopado de nanoestructuras de óxido de galio Arguente principal	Iñaki Lopez Garcia (Doutoramento) Universidad Complutense de Madrid, Espanha
2014	Lattice location of transition metals in silicon by means of emission channeling Arguente principal	Daniel José da Silva (Doutoramento) Universidade do Porto, Portugal
2014	Síntesis y caracterización de micro- y nanoestructuras de ZnS:X (X=Al, Ga, In) Vogal	Belén Sotillo Buzarra (Doutoramento) Universidad Complutense de Madrid, Espanha
2014	Caracterização de nanocristais de SnO2 e SnO2:Eu crescidos por LAFD Arguente principal	Ana Isabel da Costa Viegas Sena (Mestrado) Universidade de Aveiro, Portugal
2013	Caracterização e Modificação de Heteroestruturas de Nitretos do Grupo-III Orientador	Sérgio Nuno Magalhães (Doutoramento) Universidade de Aveiro, Portugal
2013	Síntese e caracterização de nano emissores de YAG:Dy para LEDs Arguente principal	Paulo Manuel Figueiras Forte (Mestrado) Universidade de Aveiro, Portugal
2012	Croissance et caractérisations structurales e optiques d’hétérostructures de nitrures d’éléments III émettant dans l’UV Arguente principal	Vincent Fellmann (Doutoramento) Université de Grenoble École Doctorale de Physique, França
2012	Daniela Filipa Rodrigues Pereira Arguente principal	Denis Jalabert (Agregação) Université Grenoble Alpes, França
2011	Implantação de terras raras em GaN com orientação polar e não-polar Orientador	Norberto José Sobral Catarino (Mestrado) Universidade de Lisboa Faculdade de Ciências, Portugal
2010	Structural and compositional characterization of wide bandgap semiconductor heterostructures by ion beam analysis Arguente principal	Andrés Redondo-Cubero (Doutoramento) Universidad Autónoma de Madrid, Espanha
2010	Crescimento e caracterização de fibras de TiO2 e nano/microcristais de ZnO Arguente principal	Joana Catarina Ferreira Rodriques (Mestrado) Universidade de Aveiro, Portugal
2010	Implementation of “ab initio” Perturbed Angular Correlation observables for analysis of fluctuating quadrupole interactions Arguente principal	Marcelo Barbosa (Mestrado) Universidade do Porto, Portugal
2008	Comportement des semiconducteurs de structure wurtzite à base d'azote sous implantation d’ions terres rares de moyenne énergie Arguente principal	Florence Gloux (Doutoramento) Université de Caen Normandie, França

Arbitragem científica em conferência

	Nome da conferência	Local da conferência
2022 - Atual	International Conference on Ion Beam Modification of Materials
2018 - Atual	EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
2018 - Atual	Física 2018/2020/2022 (Physics Conference organised by the Portuguese Physics Society)
2024 - 2024	CMD31-General Conference of the Condensed Matter Division of the EPS, Braga, Portugal
2021 - 2021	3rd Condensed Matter Physics National Conference, Lisboa, Portugal	Portuguese Physical Society
2017 - 2017	20th International Conference on Surface Modification of Materials by Ion Beams	Lisbon, Portugal
2015 - 2015	28th International Conference on Defects in Semiconductors	Aalto University, Finland
2015 - 2015	XIII Iberian Joint Meeting on Atomic and Molecular Physics (IBER2015)	University of Aveiro, Portugal
2012 - 2015	"Oxide-based Materials and Devices" conferences, editions III (2012), IV (2013), V (2014) and VI (2015),	SPIE OPTO, San Francisco, USA.

Comissão de avaliação

	Descrição da atividade Tipo de assessoria	Instituição / Organização	Entidade financiadora
2025 - Atual	Member of the GSI MATPAC committee, which selects the beamtime to allocate the experiments at the GSI-Materials Research beamlines
2024 - Atual	Member of the Scientific Advisory Committee of Centro de Micro-Análisis de Materiales (CMAM), Madrid
2021 - Atual	Member of the Selection Panel in charge of allocating beam time to the proposals submitted to the iPAC (Interdisciplinary Program Advisory Committee) of GANIL (Grand Accélérateur National d'Ions Lourds) Avaliador
2020 - Atual	Reviewer for book proposal of IOP eBooks	IOP Publishing Ltd, Reino Unido
2019 - Atual	Member of the EMIR&A Scientific committee	French National network of accelerators for irradiation and analysis of molecules and materials , França
2014 - Atual	Member of the User Selection Panel at the Ion Beam Centre, Helmholtz-Zentrum Dresden-Rossendorf, Germany. Avaliador	Helmholtz-Zentrum Dresden-Rossendorf, Alemanha
2012 - Atual	Evaluator of research projects of several funding agencies: Agence Nationale de la Recherche (ANR), France; National Science Centre, Poland; National Research Foundation, South Africa; National Science Foundation (NSF), USA; German Academic Exchange Service DAAD; Marsden Fund Council, New Zealand; Scientific Counsel of Latvia		Agence nationale de la recherche Deutscher Akademischer Austauschdienst Dienst National Science Centre Poland National Research Foundation National Science Foundation Marsden Fund Council Scientific Counsel of Latvia
2011 - Atual	Member of the Panel of Reviewers of beamtime proposal at Centro de Micro-Análisis de Materiales, Madrid, Spain Avaliador	Universidad Autónoma de Madrid, Espanha
2024 - 2024	Member of the selection panel for the Trans-Atlantic Partnership for Enhancing Scientific Careers in Developing Countries (ATAP)
2022 - 2022	Member of the Visiting Commission of the Department of Electrical and Computer Engineering (DEEC) of IST, University of Lisbon Membro
2019 - 2022	Member of the ISOLDE and Neutron Time-of-Flight Experiments Committee - INTC - CERN Avaliador	European Organization for Nuclear Research, Suiça

Consultoria / Parecer

	Descrição da atividade	Instituição / Organização
2019 - 2022	Member of the Advisory Editorial Board of Nuclear Inst. and Methods in Physics Research, B

Curso / Disciplina lecionado

	Disciplina	Instituição / Organização
2018 - Atual	Advanced Characterization of Functional Materials	Instituto Superior Técnico Departamento de Física, Portugal
2018 - Atual	Photovoltaic Solar Energy	Instituto Superior Técnico Departamento de Física, Portugal
2018 - Atual	Physics and Technology of Semiconductors	Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2021	Materials Science for Nuclear Technologies	Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2018	Electromagnetism and Optics	Instituto Superior Técnico Departamento de Física, Portugal
2012 - 2017	Mechanics and Waves	Instituto Superior Técnico Departamento de Física, Portugal

Membro de associação

	Nome da associação	Tipo de participação
2020 - Atual	União dos Físicos dos Países de Língua Portuguesa (UFPLP)	member
2019 - Atual	European Physical Society (EPS)	member
2005 - Atual	Portuguese Physics Society (SPF)	since 2017: Member of the committee of the Nuclear Physics section; 2019-2022 treasurer
1998 - Atual	German Physics Society (DPG)	member

Membro de comissão

	Descrição da atividade Tipo de participação	Instituição / Organização
2023 - Atual	Member of Executive Board European Physical Society (EPS) Membro
2023 - Atual	Member of Executive Board European Nuclear Education Network (ENEN) Membro
2023 - Atual	President of the Department of Nuclear Sciences and Engineering of IST Presidente / Vice-presidente	Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - Atual	Member of the committee of the Nuclear Physics section of the Portuguese Physics Society Membro	Portuguese Physics Society, Portugal
2021/01 - 2022/12/31	Member and secretary of the scientific council of Instituto Superior Técnico, U. Lisboa Membro	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Representative of DECN in the “Comissão de Equivalências” of IST, commission to evaluate the requests of recognition of foreign academic degrees Membro	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022	Representative of DECN in the “Comissão Conjunta do Científico e Pedagógico para o 3º ciclo” of IST, commission to redefine the doctoral programs of IST Membro	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022	Member of the Commission to implement the JUNO (bachelor) and SCOPE (masters) Capstone projects according to the new Teaching Model and Pedagogical Practices 2021/2022 (MEPP)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2022	Member of the Executive Commission of the Department of Nuclear Sciences and Engineering of IST Membro	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2022	Member of the Directive Board of the Portuguese Physics Society Membro	Portuguese Physics Society, Portugal
2021 - 2021	Representative of DECN in the Commission of Department Communication of IST Membro	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2020	Member of the Ad-Hoc.Commission “Projecto Integrador de 1º ciclo (PIC1)/Projecto Capstone 2º ciclo” of PercIST (Princípios enquadradores para a reestruturação dos cursos de 1º e 2º ciclo do Instituto Superior Técnico 2122): Interdepartamental commission of IST to implement Project based learning initiatives Membro	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020	Substitute member of the Ad-Hoc.Commission “Minors multidisciplinares/transversais ao nível do 2.º ciclo” of PercIST: Interdepartamental commission of IST to implement multidisciplinary Minors as optional specialization for all master degree courses of IST Outro	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020	Member of the Working Group to establish Minors offered by the Department of Nuclear Sciences and Engineering Membro	Universidade de Lisboa Instituto Superior Técnico, Portugal

Tutoria

	Tópico	Nome do aluno
2020 - 2022	Highly sensitive organic photosensor for advanced wireless light communication	Sara Sequeira
2013 - 2017	Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN	Maria Isabel Fialho

Distinções

Prémio

2020	Scientific Award Universidade de Lisboa / Caixa Geral de Depósitos in the area of Physics and Materials Science Caixa Geral de Depositos, Portugal Universidade de Lisboa, Portugal

Título

2020	Docente Excelente - 2018/2019 Universidade de Lisboa Instituto Superior Técnico, Portugal
2016	Visiting Professor University of Strathclyde Department of Department of Physics, Reino Unido
2014	Visiting Professor University of Strathclyde Department of Department of Physics, Reino Unido