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Katharina Lorenz (PhD in Physics 2002, University of Bonn, Germany) is Coordinating Researcher at Instituto Superior Tecnico (IST), University of Lisbon and since 2023 she is the President of the Department of Nuclear Sciences and Engineering. She is Director of the Laboratory of Accelerators and Radiation Technologies (Responsible for the Laboratory of Accelerators) of IST. She leads the group of Wide Bandgap Semiconductors of INESC Microsystems and Nanotechnologies (INESC MN). She teaches at the Physics Department of IST and is collaborator of the Institute for Plasmas and Fusion (IPFN) of IST. Published 245 journal articles and 3 book chapters. Organized 13 conferences or workshops. Delivered 60 invited talks at scientific events. Supervised or co-supervised 6 PhD theses and 15 MSc dissertations. Has received 4 awards and/or honors. Participates and/or participated as Principal Investigator in 17 projects and as Researcher in 18 projects. Works in the areas of Exact Sciences / Physical Sciences with emphasis on wide bandgap semiconductors and devices, nanotechnology, ion beam analysis and ion beam modification as well as radiation effects in materials and devices. She has been member of the Board of the European Nuclear Education Network (since 2023), member of the Executive Committee of the European Physical Society (since 2023), member of the Directive Board of the Portuguese Physical Society (SPF) as treasurer (2019-2022), member of the coordination committee of the Nuclear Physics section (since 2017) and she is Mentor of the EPS Young Minds Section Lisbon. She is Editor of the Elsevier journal Nuclear Instruments and Methods in Physics research, Section B: Beam Interactions with materials and Atoms (since 2024).
Identificação

Identificação pessoal

Nome completo
Katharina Lorenz

Nomes de citação

  • Lorenz, Katharina
  • K. Lorenz

Identificadores de autor

Ciência ID
E910-E432-2AB6
ORCID iD
0000-0001-5546-6922
Researcher Id
F-3513-2010

Domínios de atuação

  • Ciências Exatas - Física

Idiomas

Idioma Conversação Leitura Escrita Compreensão Peer-review
Alemão (Idioma materno)
Inglês Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1)
Francês Utilizador independente (B1) Utilizador independente (B1) Utilizador independente (B1) Utilizador independente (B1)
Português Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1)
Russo Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1)
Formação
Grau Classificação
2020
Concluído
Engenharia Física Tecnológica (Título de Agregado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2002
Concluído
Physics (Doutoramento)
Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha
"Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)" (TESE/DISSERTAÇÃO)
Very Good
1998
Concluído
Physics (Mestrado)
Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha
"Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)" (TESE/DISSERTAÇÃO)
Very Good
Percurso profissional

Ciência

Categoria Profissional
Instituição de acolhimento
Empregador
2021/10/01 - Atual Investigador Coordenador (carreira) (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2018/09/01 - 2021/09/30 Investigador principal (carreira) (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2015/07/01 - 2018/08/31 Investigador Auxiliar (carreira) (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2013/09/01 - 2015/06/30 Investigador Contratado (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2008/03/01 - 2013/02/28 Investigador Contratado (Investigação) Instituto Tecnológico e Nuclear, Portugal
2002/10/01 - 2008/02/28 Pós-doutorado (Investigação) Instituto Tecnológico e Nuclear, Portugal

Docência no Ensino Superior

Categoria Profissional
Instituição de acolhimento
Empregador
2013/03/01 - Atual Leitor (Docente Universitário) Instituto Superior Técnico Departamento de Física, Portugal
Instituto Superior Técnico Departamento de Física, Portugal
2014/01/01 - 2017/12/31 Professor Visitante (Docente Universitário) University of Strathclyde, Reino Unido

Cargos e Funções

Categoria Profissional
Instituição de acolhimento
Empregador
2023/01/04 - Atual Presidente de Unidade Orgânica Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
2022/01/01 - Atual Director of the Laboratory of Accelerators and Radiation Technologies (Responsible for the Laboratory of Accelerators) of Campus Tecnológico e Nuclear IST Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2023/01/04 - 2024/12/31 Presidente de Unidade Orgânica Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal

Outros

Categoria Profissional
Instituição de acolhimento
Empregador
2019/01/01 - Atual Member of INESC Microsistemas e Nanotecnologias Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Portugal
2018/01/01 - Atual Collaborator of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal
2013/01/01 - 2018/12/31 Member of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal
2002/01/01 - 2012/12/31 Member of the Centre for Nuclear Physics of the University of Lisbon (CFNUL), Portugal Universidade de Lisboa, Portugal
1999/02/01 - 2002/07/31 PhD Student Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha
1998/07/01 - 1998/12/30 Diploma Student Rheinische Friedrich-Wilhelms-Universität Bonn, Alemanha
1998/01/02 - 1998/06/30 ERASMUS student Université Claude Bernard Lyon 1 Faculté des Sciences et Technologies, França
Projetos

Bolsa

Designação Financiadores
2024/03/01 - 2028/02/29 Research Infrastructure Access in Nanoscience & Nanotechnology (RIANA)
Co-Investigador Responsável (Co-IR)
2022 - 2026 RECYCLABLE MATERIALS DEVELOPMENT at ANALYTICAL RESEARCH INFRASTRUCTURES
101058414
Co-Investigador Responsável (Co-IR)
EU Framework Programme for Research and Innovation Secure Societies
2023/01/02 - 2025/12/31 Ion beam processing of Ga2O3
2022.05329.PTDC
Investigador responsável
Fundação para a Ciência e a Tecnologia
Em curso
2022/01 - 2024/04 FUll colour Nitride Nanowire light emitting diodes (FUNN-LED)
2021.09198.CBM
Investigador responsável
2021/02/01 - 2024/01/31 Defect Engineered 2D Oxide Field Effect Transistors for efficient biosensing
PTDC/CTM-CTM/3553/2020
Investigador responsável
INESC Microsistemas e Nanotecnologias, Portugal

Universidade de Aveiro, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2021/01/01 - 2022/12/31 Material’s Research with Radioactive Isotopes and Nuclear Techniques at ISOLDE-CERN
CERN/FIS-TEC/0003/2019
Investigador
Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

Centro de Ciências e Tecnologias Nucleares, Portugal

Universidade de Aveiro, Portugal

Universidade de Trás-os-Montes e Alto Douro, Portugal

Universidade do Porto Faculdade de Ciências, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2019 - 2022 Research And Development with Ion Beams – Advancing Technology in Europe
Investigador
EU Framework Programme for Research and Innovation Science with and for Society
Em curso
2020/06/01 - 2021/11/30 Nano-engineering of wide bandgap Semiconductors using Ion Beams (NASIB)
LISBOA-01-0145-FEDER-028011
Investigador responsável
Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

INESC Microsistemas e Nanotecnologias, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2018/06 - 2021/06 NAno-engineering of wide bandgap Semiconductors using Ion Beams
PTDC/CTM-CTM/28011/2017
Investigador responsável
Fundação para a Ciência e a Tecnologia
Em curso
2018/07/01 - 2020/12/31 PORTUGAL AT ISOLDE : Materials and Nuclear Physics Research with Radioactive Isotopes and Techniques
CERN/FIS-PAR/0005/2017
Investigador
Fundação para a Ciência e a Tecnologia
2015 - 2018 Ion beam modification of advanced wide bandgap semiconductor hetero- and nanostructures
IST Start-Up Funds
Investigador responsável
Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade de Lisboa Instituto Superior Técnico
Concluído
2013/05 - 2015/10 Functionalising wide bandgap semiconductor nanowires using ion beams: Novel materials for nano-light emitters and nano-sensors
Investigador responsável
Fundação para a Ciência e a Tecnologia
2013/05 - 2015/09 Bandgap engineering of III-nitride quantum wells for efficient green light emitting diodes
Investigador responsável
Fundação para a Ciência e a Tecnologia
2013/01/01 - 2014/12/31 Doping studies of GaN nanowires
FCT PESSOA
Investigador responsável
Fundação para a Ciência e a Tecnologia
Concluído
2012/06 - 2014/12 Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development.
Investigador
Fundação para a Ciência e a Tecnologia
2010/02 - 2013/07 Free-charge carrier properties and doping mechanisms of InN-based materials
Investigador
Fundação para a Ciência e a Tecnologia
2010/04 - 2013/03 Ion beam modification and neutron irradiation studies of wide bandgap semiconductor hetero- and nanostructures
Investigador responsável
Fundação para a Ciência e a Tecnologia
2011/02 - 2012/05 Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development.
Investigador
Fundação para a Ciência e a Tecnologia
2011 - 2012 Ion beam modification of novel III-nitride hetero- and nano-structures
FCT/DAAD
Investigador responsável
Fundação para a Ciência e a Tecnologia
2010/01 - 2010/12 Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE
Investigador
Fundação para a Ciência e a Tecnologia
2007/07 - 2010/12 Ternary and quaternary nitride alloys for lattice matched heterostructures: Novel materials for high efficiency field effect transistors and optoelectronic devices
Investigador responsável
Fundação para a Ciência e a Tecnologia
2007/01 - 2009/02 Optical doping of AlN and GaN/AlN nanostructures by ion implantation
Investigador responsável
Fundação para a Ciência e a Tecnologia
2008 - 2009 Rare Earth doped GaN quantum dots for efficient light emitters
FCT PESSOA
Investigador responsável
Fundação para a Ciência e a Tecnologia
2007/11 - 2008/10 Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE
Investigador
Fundação para a Ciência e a Tecnologia
2005/09 - 2007/12 Perturbed Angular Correlations experiments at the Portuguese Research Reactor
Investigador
Fundação para a Ciência e a Tecnologia
2005/07 - 2007/07 Optical doping of AlN and GaN/AlN nanostructures by ion implantation
Investigador responsável
Fundação para a Ciência e a Tecnologia
2005 - 2007 Doping of GaN-based nanostructures by ion-implantation
FCT/DAAD
Investigador responsável
Fundação para a Ciência e a Tecnologia

Projeto

Designação Financiadores
2021/01/01 - 2025/12/31 Instituto de Plasmas e Fusão Nuclear
LA/P/0061/2020
UID/FIS/50010/2019
Universidade da Madeira, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal

Instituto de Plasmas e Fusão Nuclear, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2021/01/01 - 2025/12/31 Institute for Health and Bioeconomy
LA/P/0140/2020
Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal

Universidade Nova de Lisboa, Portugal

Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal

Unidade de Ciências Biomoleculares Aplicadas, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

INESC Microsistemas e Nanotecnologias, Portugal

Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2023/01/01 - 2024/12/31 Investigação em Materiais com Isótopos e Técnicas Nucleares Radioativas no ISOLDE-CERN 2021
CERN/FIS-TEC/0003/2021
Universidade de Aveiro CICECO, Portugal

Universidade do Porto Faculdade de Ciências, Portugal

Universidade de Trás-os-Montes e Alto Douro, Portugal

Universidade de Aveiro, Portugal

Universidade de Trás-os-Montes e Alto Douro Centro de Química Vila Real, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal

Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal
Fundação para a Ciência e a Tecnologia
Em curso
2019/01/01 - 2023/12/31 Applied Molecular Biosciences Unit
UIDP/04378/2020
UIDB/04378/2020
Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal

Universidade do Porto, Portugal

Universidade Nova de Lisboa, Portugal

Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal

Unidade de Ciências Biomoleculares Aplicadas, Portugal

Universidade do Porto Instituto de Ciências Tecnologias e Agroambiente, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

INESC Microsistemas e Nanotecnologias, Portugal

Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2015/10/10 - 2017/12/31 Material´s Characterization with Nuclear Radioactive Techniques - synergy and complementarity applied to training and development. (old project: Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE-CERN)
CERN/FIS-NUC/0004/2015
Universidade de Aveiro CICECO, Portugal

Universidade do Porto Faculdade de Ciências, Portugal

Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal

Universidade de Trás-os-Montes e Alto Douro, Portugal

Universidade de Aveiro, Portugal

FCiênciasID Associação para a Investigação e Desenvolvimento de Ciências, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal

Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2013/05/01 - 2015/10/31 Funcionalização de nanofios baseados em semicondutores de largo hiato energético utilizando feixes de iões: Materiais inovadores para nano-emissores de luz e nanosensores
PTDC/CTM-NAN/2156/2012
Investigador responsável
Universidade de Aveiro, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2013/05/04 - 2015/09/03 Tuning the energy gap of quantum wells based on III-N semiconductors for efficient green light-emitting diodes
PTDC/FIS-NAN/0973/2012
Investigador responsável
Universidade de Aveiro, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal

Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2012/06/01 - 2014/12/31 Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN - investigação aplicada a materiais com técnicas nucleares, formação e desenvolvimento.
CERN/FP/123585/2011
Universidade do Porto Faculdade de Ciências, Portugal

Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal

Universidade de Trás-os-Montes e Alto Douro, Portugal

Universidade de Aveiro, Portugal

Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2011/01/01 - 2013/12/31 Projecto Estratégico - UI 275 - 2011-2012
PEst-OE/FIS/UI0275/2011
Universidade de Lisboa Instituto Superior Técnico, Portugal

Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal

Universidade de Lisboa Faculdade de Ciências, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2010/02/01 - 2013/07/31 Properties of free charge carriers and doping mechanisms in InN-based materials
PTDC/FIS/100448/2008
Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal

Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2010/04/01 - 2013/03/31 Modification studies of nano- and heterostructures of high gap semiconductors by ion implantation and neutron irradiation
PTDC/CTM/100756/2008
Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2011/02/01 - 2012/05/31 Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN - research applied to materials with nuclear techniques, training and development
CERN/FP/116320/2010
Universidade do Porto Faculdade de Ciências, Portugal

Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal

Universidade de Trás-os-Montes e Alto Douro, Portugal

Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2010/01/01 - 2010/12/31 Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN
CERN/FP/109272/2009
Universidade de Lisboa Instituto Superior Técnico, Portugal

Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2007/07/01 - 2010/12/31 Ternary and quaternary nitride alloys for heterostructures with compatibility in network parameters: new materials for field effect transistors and high efficiency optoelectronic devices
PTDC/FIS/65233/2006
Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2007/05/01 - 2010/10/31 Implantação de nanocamadas magneticas de semicondutores de hiato largo para aplicações à spintrónica
PTDC/FIS/66262/2006
Universidade de Aveiro, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal

Universidade do Porto Faculdade de Ciências, Portugal
Fundação para a Ciência e a Tecnologia
Concluído
2007/11/01 - 2008/10/31 Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN
POCI/FP/81921/2007
PDCT/FP/63911/2005
Fundação para a Ciência e a Tecnologia
Concluído
2005/09/01 - 2007/12/31 Experiências de Correlações Angulares Perturbadas no Reactor Português de Investigação
POCI/FIS/58498/2004
Fundação para a Ciência e a Tecnologia
Concluído
2005/07/04 - 2007/07/31 Dopagem óptica de AlN e nano-estruturas de GaN/AlN por implantação iónica
POCI/FIS/57550/2004
Universidade de Aveiro, Portugal
Fundação para a Ciência e a Tecnologia
Concluído

Outro

Designação Financiadores
2009 - 2015 The role of In in III-nitride ternary semiconductors
ISOLDE/CERN
Investigador responsável
Concluído
Produções

Publicações

Artigo em conferência
  1. Verheij, Dirkjan; Peres, Marco; Cardoso, Susana; Alves, Luís Cerqueira; Alves, Eduardo; Durand, Cristophe; Eymery, Joël; Fernandes, Jorge; Lorenz, Katharina. "Ion beam induced current analysis in GaN microwires". 2019.
    10.1051/epjconf/202023305001
  2. Lorenz, K.; Redondo-Cubero, A.; Lourenço, M. B.; Sequeira, M. C.; Peres, M.; Freitas, A.; Alves, L. C.; et al. "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells, Proc. of SPIE Vol. 9748 (2016) 97480L". 2016.
    10.1117/12.2211429
  3. Yamaga, M.; Watanabe, H.; Kurahashi, M.; O'Donnell, K. P.; Lorenz, K.; Bockowski, M.; IOP. "Indirect excitation of Eu3+ in GaN codoped with Mg and Eu, Journal of Physics: Conference Series 619 (2015) 012025". 2015.
    10.1088/1742-6596/619/1/012025
  4. O'Donnell, K. P.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; Bockowski, M.. "Europium-doped GaN(Mg): beyond the limits of the light-emitting diode, Phys. Status Solidi C 11 (2014) 662–665". 2014.
    10.1002/pssc.201300519
  5. Kachkanov, Vyacheslav; Dolbnya, Igor; O'Donnell, Kevin; Lorenz, Katharina; Pereira, Sergio; Watson, Ian; Sadler, Thomas; et al. "Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2013.
    10.1002/pssc.201200596
  6. O'Donnell, K.P.; Martin, R.W.; Edwards, P.R.; Lorenz, K.; Alves, E.; Bockowski, M.. "Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN, AIP Conference Proceedings 1566, (2013) 63-64". 2013.
    10.1063/1.4848286
  7. Nogales, E.; Lopez, I.; Mendez, B.; Piqueras, J.; Lorenz, K.; Alves, E.; Garcia, J. A.. "Doped gallium oxide nanowires for photonics, Proc. of SPIE Vol. 8263 (2012) 82630B". 2012.
    10.1117/12.907766
  8. Kachkanov, V.; Dolbnya, I.P.; O'Donnell, K.P.; Lorenz, K.; Pereira, S.; Martin, R.W.; Edwards, P.R.; Watson, I.M.. "Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2012.
    10.1557/opl.2012.216
  9. Lacroix, B.; Leclerc, S.; Ruterana, P.; Declémy, A.; Miranda, S.M.C.; Lorenz, K.; Alves, E.. "Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation". 2012.
    10.1557/opl.2011.995
  10. Kachkanov, V.; O'Donnell, K.P.; Rice, C.; Wolverson, D.; Martin, R.W.; Lorenz, K.; Alves, E.; Bockowski, M.. "Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN, Mater. Res. Soc. Symp. Proc. Vol. 1290 (2011)". 2011.
    10.1557/opl.2011.241
  11. Bola, AM; Correia, MR; Pereira, S; Gonzalez, JC; Lorenz, K; Alves, E; Barradas, N; Briot, O. "Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers, Phys. Status Solidi C 7 (2010) 56–59". 2010.
    10.1002/pssc.200982632
  12. Lorenz, K; Alves, E; Magalhães, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, M E G. "Defect studies and optical activation of Yb doped GaN, Journal of Physics: Conference Series 249 (2010) 012053". 2010.
    10.1088/1742-6596/249/1/012053
  13. Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K; Alves, E; Palacios, T; Jena, D. "Mechanisms of AlInN growth by MOVPE: modeling and experimental study, Phys. Status Solidi C, 5 (2008) 1688-1690". 2007.
    10.1002/pssc.200778588
  14. Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; et al. "Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence, Phys. Status Solidi C 3 (2006) 1927-1930". 2006.
    10.1002/pssc.200565411
  15. Lorenz, K; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E; Martin, RW; et al. "Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN, MRS Symp. Proc. 892 (2005) FF23.15". 2006.
  16. Roqan, I.S.; Trager-Cowan, C.; Hourahine, B.; Lorenz, K.; Nogales, E.; O'Donnell, K.P.; Martin, R.W.; et al. "Characterization of the blue emission of Tm/Er co-implanted GaN, MRS Symp. Proc. 892 (2005) FF23.13". 2006.
  17. Nogales, E.; Lorenz, K.; Wang, K.; Roqan, I.S.; Martin, R.W.; O'Donnell, K.P.; Alves, E.; Ruffenach, S.; Briot, O.. "A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN, MRS Symp. Proc. 892 (2005) FF24.3". 2006.
  18. Wojtowicz, T; Ruterana, P; Lorenz, K; Wahl, U; Alves, E; Ruffenach, S; Halambalakis, G; et al. "The atomic structure of defects formed during doping of GaN with rare earth ions, Phys. Status Solidi C 2 (2005) 1081-1084". 2005.
    10.1002/pssc.200460625
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Artigo em revista
  1. Yamaga, Mitsuo; Singh, Akhilesh K.; Cameron, Douglas; Edwards, Paul R.; Lorenz, Katharina; Kappers, Menno J.; Bockowski, Michal. "Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu". Journal of Luminescence 270 (2024): 120557. http://dx.doi.org/10.1016/j.jlumin.2024.120557.
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  2. Sierakowski, Kacper; Jaroszynski, Piotr; Jakiela, Rafal; Fijalkowski, Michal; Sochacki, Tomasz; Iwinska, Malgorzata; Turek, Marcin; Lorenz, Katharina; Bockowski, Michal. "Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride". Materials Science in Semiconductor Processing 171 (2024): 108022. http://dx.doi.org/10.1016/j.mssp.2023.108022.
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  3. Verheij, Dirkjan; Vicentijevic, Milan; Jakšic, Milko; Peres, Marco; Alves, Luís Cerqueira; Cardoso, Susana; Alves, Eduardo; et al. "Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements". ACS Applied Electronic Materials (2024): http://dx.doi.org/10.1021/acsaelm.3c01584.
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  4. Magalhães Esteves, Duarte; Rodrigues, Ana Luísa; Dias, Maria Isabel; Alves, Luís Cerqueira; Jia, Zhitai; Mu, Wenxiang; Lorenz, Katharina; Peres, Marco. "Thermoluminescence Studies of Proton-Irradiated Cr-, Mg-Codoped ß-Ga2O3". ACS Omega 8 50 (2023): 47874-47882. http://dx.doi.org/10.1021/acsomega.3c06429.
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  5. Candeias, Maria B.; Fernandes, Tiago V.; Falcão, Bruno P.; Cunha, António F.; Cunha, José M. V.; Barbosa, João; Teixeira, Jennifer P.; et al. "Cu(In,Ga)Se$$_2$$-based solar cells for space applications: proton irradiation and annealing recovery". Journal of Materials Science 58 42 (2023): 16385-16401. http://dx.doi.org/10.1007/s10853-023-09033-x.
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  6. Caçador, A.; Józwik, P.; Magalhães, S.; Marques, J.G.; Wendler, E.; Lorenz, K.. "Extracting defect profiles in ion-implanted GaN from ion channeling". Materials Science in Semiconductor Processing 166 (2023): 107702. http://dx.doi.org/10.1016/j.mssp.2023.107702.
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  7. Mieszczynski, Cyprian; Jozwik, Przemyslaw; Skrobas, Kazimierz; Stefanska-Skrobas, Kamila; Ratajczak, Renata; Jagielski, Jacek; Garrido, Frederico; et al. "Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 540 (2023): 38-44. http://dx.doi.org/10.1016/j.nimb.2023.04.010.
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  9. Magalhães, S; Cabaço, J S; Concepción, O; Buca, D; Stachowicz, M; Oliveira, F; Cerqueira, M F; Lorenz, K; Alves, E. "Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors". Journal of Physics D: Applied Physics 56 24 (2023): 245102. http://dx.doi.org/10.1088/1361-6463/acc597.
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  30. Branco, A.C.; Silva, R.; Jorge, H.; Santos, T.; Lorenz, K.; Polido, M.; Colaço, R.; Serro, A.P.; Figueiredo-Pina, C.G.. "Tribological performance of the pair human teeth vs 3D printed zirconia: An in vitro chewing simulation study". Journal of the Mechanical Behavior of Biomedical Materials 110 (2020): 103900. http://dx.doi.org/10.1016/j.jmbbm.2020.103900.
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  33. Biquard, X.; Víllora, E. G.; Shimamura, K.; Lorenz, K.. "XANES/EXAFS study of the Lu and Y incorporation in the single crystal Tb3Sc2Al3O12 Faraday rotator". Journal of Applied Physics 127 11 (2020): 115106. http://dx.doi.org/10.1063/1.5145188.
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  34. Cameron, D.; O'Donnell, K. P.; Edwards, P. R.; Peres, M.; Lorenz, K.; Kappers, M. J.; Bockowski, M.. "Acceptor state anchoring in gallium nitride". Applied Physics Letters 116 10 (2020): 102105. http://dx.doi.org/10.1063/1.5142168.
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  35. Branco, A.C.; Silva, R.; Santos, T.; Jorge, H.; Rodrigues, A.R.; Fernandes, R.; Bandarra, S.; et al. "Suitability of 3D printed pieces of nanocrystalline zirconia for dental applications". Dental Materials 36 3 (2020): 442-455. http://dx.doi.org/10.1016/j.dental.2020.01.006.
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  37. M. B. Barbosa; J. G. Correia; K. Lorenz; R. Vianden; J. P. Araújo. "Studying electronic properties in GaN without electrical contacts using ¿-¿ vs e--¿ Perturbed Angular Correlations". Scientific Reports (2019): https://doi.org/10.1038/s41598-019-52098-5.
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  39. Redondo-Cubero; Vázquez; Jalabert; Lorenz; Sedrine. "Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation". Crystals 9 9 (2019): 453. http://dx.doi.org/10.3390/cryst9090453.
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Capítulo de livro
  1. Jozwik, Przemyslaw; Nowicki, Lech; Ratajczak, Renata; Mieszczynski, Cyprian; Stonert, Anna; Turos, Andrzej; Lorenz, Katharina; Alves, Eduardo. "Advanced Monte Carlo Simulations for Ion-Channeling Studies of Complex Defects in Crystals". In Theory and Simulation in Physics for Materials Applications, 133-160. Springer International Publishing, 2020.
    10.1007/978-3-030-37790-8_8
  2. Lorenz, Katharina. "Implantation damage formation in GaN and ZnO” Chapter in “Ion Implantation". In Ion Implantation. INTECH, 2012.
  3. Lorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.. "RE implantation and annealing of III-nitrides". 2010.
    10.1007/978-90-481-2877-8_2
Poster em conferência
  1. Magalhães Esteves, Duarte ; Cardoso Pedro, Miguel; Pereira, Daniela R.; Magalhães, Sérgio; Rodrigues, Ana Luísa; Cerqueira, Luís; Luís F. Santos ; et al. Autor correspondente: Magalhães Esteves, Duarte. "Ion-implanted ß-Ga2O3: from nanomembrane fabrication to photonic applications". Trabalho apresentado em Local Photonics Meetup 2023, 2023.
  2. Magalhães Esteves, Duarte ; Pedro, M. C.; Pereira, Daniela R.; Magalhães, Sérgio; Alves, LC; Luís F. Santos ; Lorenz, Katharina; Peres, Marco. Autor correspondente: Magalhães Esteves, Duarte. "A novel approach for ß-Ga2O3 nanomembrane fabrication using ion implantation". Trabalho apresentado em 21st International Conference of Radiation Effects in Insulators, 2023.
  3. Antunes, André M.; Hussain, Mukhtar; Alves, Joana; Vaz, Gonçalo; Pires, Hugo; Peres, Marco; Lorenz, Katharina; et al. "Shining light on solids: a TDDFT study of solid-state HHG". 2023.
    10.1117/12.2665519
  4. Kishor Upadhyaya; Fatimah Alreshidi ; Hadeel Alamoudi ; Magalhães Esteves, Duarte ; Peres, Marco; K. Lorenz; Iman Roqan. "Effect of Sn+ ion implantation and post-annealing on enhancing ß-Ga2O3¿ based DUV self-powered photodetector performance". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023.
  5. Zanoni, Julia; Correia, Maria Rosário; Peres, Marco; Magalhães Esteves, Duarte ; Lorenz, Katharina; Monteiro, Teresa; Rodrigues, Joana Catarina Ferreira. Autor correspondente: Rodrigues, Joana Catarina Ferreira. "Optically active centres in Pr-implanted ß-Ga2O3 single crystals". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023.
  6. Batista, Maria; Magalhães Esteves, Duarte ; Rodrigues, Ana Luísa; Marques Dias, Maria Isabel; Alves, LC; Alves, Eduardo; Costa, Florinda; et al. Autor correspondente: Peres, Marco. "Ionizing radiation detection and dosimetric applications of Cr- doped Zinc Gallogermanate". Trabalho apresentado em European Materials Research Society Spring Meeting 2023, 2023.
  7. Verheij, Dirkjan; Alves, Luís Cerqueira; Vicentijevic, Milan; Jaksic, Milko; Peres, Marco; Cardoso, Susana; Alves, Eduardo; et al. "Ion beam induced current analysis in GaN core-shell p-n junction microwires". Trabalho apresentado em ICNMTA 2022, 2022.
  8. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Cr-doped ß- Ga2O3: Luminescence activation by irradiation-induced defects". Trabalho apresentado em Física 2022, 2022.
  9. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Field effect transistors on MoO3 crystals and pseudo-layers: fabrication and characterization". Trabalho apresentado em Física 2022. Faculdade de Ciências da Universidade do Porto, Portugal., 2022.
  10. Verheij, Dirkjan; Alves, Luís Cerqueira; Peres, Marco; Cardoso, Susana; Alves, Eduardo; Durand, Christophe; Eymery, Joël; et al. "Influence of proton irradiation damage on GaN core-shell p-n junction microwire radiation detectors". Trabalho apresentado em IBMM 2022, 2022.
  11. Zanoni, Julia; Magalhães Esteves, Duarte ; Jia, Z.; Mu, W.; Alves, LC; Lorenz, Katharina; Correia, Maria Rosário; et al. Autor correspondente: Zanoni, Julia. "Kinetics and PL quenching evaluation of optically active centres in ß-Ga2O3". Trabalho apresentado em International Conference on Ion Beam Modification of Materials, 2022.
  12. Fernandes, T. P.; Magalhães Esteves, Duarte ; Alves, Luís; Santos, L. F.; Rodrigues, Ana Luísa; Maria Isabel Dias; Catarino, N.; Peres, Marco; Lorenz, Katharina. Autor correspondente: Fernandes, T. P.. "Proton irradiation effects on hexagonal boron nitride crystals". Trabalho apresentado em 22nd International Conference on Ion Beam Modification of Materials (IBMM), 2022.
  13. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Sensitising the Cr3+ Luminescence by Irradiation-Induced Defects in ß-Ga2O3". Trabalho apresentado em 22nd International Conference on Ion Beam Modification of Materials (IBMM 2022), 2022.
  14. Marques, Gabriel; Carvalho, Alexandre Faia; Falcão, Bruno; Fernandes, António J. S.; Pereira, Sónia O.; Brinca, Ana; Costa, Florinda; et al. "Luminescent properties in CVD grown diamond single crystal modified by laser processing and ion implantation". Trabalho apresentado em IBMM 2022 – 22nd International Conference on Ion Beam Modification of Materials. Lisbon, Portugal, 2022.
  15. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Incorporation of modified MoO3 crystals and pseudo-layers into Field Effect Transistors". Trabalho apresentado em IBMM 2022 – 22nd International Conference on Ion Beam Modification of Materials. Lisbon, Portugal, 2022.
  16. J. Zanoni; D. M. Esteves; B. F. Falcão; J. P. Leitão; Z. Jia; W. Mu; L.C. Alves; et al. "Detailed spectroscopic analysis of doped ß-Ga2O3 with Si, Sn and Fe". Trabalho apresentado em Nano 2022, 2022.
  17. Zanoni, Julia; Magalhães Esteves, Duarte ; Bruno P. Falcão; Leitão, Joaquim P.; Rino, Luis; Jia, Z.; Mu, W.; et al. Autor correspondente: Zanoni, Julia. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Sn and Fe". Trabalho apresentado em NANO 2022, 2022.
  18. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Activation of the Cr3+ luminescence in proton-irradiated ß-Ga2O3". Trabalho apresentado em 3rd Condensed Matter Physics National Conference, 2022.
  19. J. Zanoni; D. M. Esteves; B. P. Falcão; J. P. Leitão; L. Rino; Z. Jia; W. Um; et al. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Mg, Sn and Fe". Trabalho apresentado em NANO 2022 - 16th International Conference on Nanostructured Materials (ICNM), Sevilla, Spain, 2022.
  20. G. Marques; A. Carvalho; B. P. Falcão; A. J. Fernandes; S. O. Pereira; A. Brinca; F. Costa; et al. "Luminescent properties in CVD grown diamond single crystal modified by laser irradiation and ion implantation". Trabalho apresentado em IBMM 22 - 22nd International Conference on Ion Beam Modification of Materials, Lisbon, Portugal, 2022.
  21. Pereira, D. R.; C. Díaz-Guerra; Peres, António M.; S. Magalhães; J. G. Correia; E. Alves; S. Cardoso; P. P. Freitas; K. Lorenz. "Defects and electrical conductivity in ion-implanted a-MoO3 lamellar crystals". Trabalho apresentado em 13th IKZ Summer School in Oxides for Electronic Applications, 2021.
  22. N. Ben Sedrine; J. Cardoso; J. P. Teixeira; D. Nd. Faye; R. R.-Andrade; A. Gustafsson; P. M. P. Salomé; et al. "Probing the optical properties of III-V nanowires for optoelectronic applications". Trabalho apresentado em Nanowire Week 2019, 2019.
  23. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Bockowski; V. Hoffmann; M. Weyers; K. Lorenz; M. R. Correia; T. Monteiro. "MOCVD-grown AlGaN/GaN superlattice structure tailored for bright red emitting diode". Trabalho apresentado em E-MRS Spring Meeting 2019, 2019.
  24. M. C. Sequeira; H. Vazquez; J.G. Mattei; F. Djurabekova; K. Nordlund; S. Zhang; I. Monnet; et al. "Effects of Swift Heavy Ions in Group-III Nitrides – A Multidisciplinary Study". Trabalho apresentado em Radiation Effects on Isolators (REI-20), Astana, Kazakhstan, 2019.
  25. A. Redondo-Cubero; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; N. Ben Sedrine. "Optical analysis of the damage and surface roughness in nanorippled ZnO produced by ion irradiation". Trabalho apresentado em E-MRS Spring Meeting 2018, 2018.
  26. N. Ben Sedrine; J. Rodrigues; J. Cardoso; D. Nd. Faye; M. Fialho; S. Magalhães; A. J. Neves; et al. "Analysis of europium implantation and annealing -induced effects in AlGaN/GaN heterostructure". Trabalho apresentado em E-MRS Spring Meeting 2018, 2018.
  27. N. Ben Sedrine; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; A. Redondo-Cubero. "ZnO nanoripples produced by medium energy ion beam sputtering: damage and roughness evolution". Trabalho apresentado em 20th International Conference on Surface Modification of Materials by ions Beams, 2017.
  28. N. Ben Sedrine; J. Cardoso; A. Alves; A. F. Martins; J. Rodrigues; A. J. Neves; D. Nd. Faye; et al. "Study of AlxGa1-xN nanowires implanted with Eu for solid-state nano-devices". Trabalho apresentado em 12th International Conference on Nitride Semiconductors, 2017.
  29. N. Ben Sedrine; J. Rodrigues; A. F. Martins; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; et al. "Eu-implanted AlGaN/GaN diode structures towards efficient solid-state lighting". Trabalho apresentado em 12th International Conference on Nitride Semiconductors, 2017.
  30. D. Nd. Faye; M. Fialho; S. Magalhães; M. Felizardo; E. Alves; N. Ben Sedrine; J. Rodrigues; et al. "Structural, Optical and Electrical Characterization of Implanted AlGaN alloys". Trabalho apresentado em 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016.
  31. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; A. J. Neves; et al. "Europium implantation and annealing effects in nitride LED structures". Trabalho apresentado em 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016.
  32. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Spectroscopic analysis of TSAG and TSLAG crystals". Trabalho apresentado em IBER 2015 (Joint Iberian Meeting on Atomic and Molecular Physics), 2015.
  33. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Structural and optical properties of TSAG and TSLAG crystals grown by Czochralski". Trabalho apresentado em CSI - Colloquium Spectroscopicum Internationale XXXIX, 2015.
  34. J. Rodrigues; T. C. Esteves; N. F. Santos; M. Fialho; L. Rino; A. J. Neves; K. Lorenz; E. Alves; T. Monteiro. "Photoluminescence studies in Tm implanted AlxGa1-xN layers". Trabalho apresentado em ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015.
  35. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; L. Rino; A. J. Neves; E. Alves; et al. "Towards white light in nitrides through defect engineering". Trabalho apresentado em ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015.
  36. M. C. Sequeira; M. B. Lourenço; A. Redondo-Cubero; N. Franco; E. Alves; M. F. Leitão; J. Rodrigues; et al. "Quantum Well Intermixing in InGaN/GaN Structures". Trabalho apresentado em ICDS 28th International Conference on Defects in Semiconductors, 2015.
  37. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN nanowires implanted with Eu3+ ions for solid-state light emission". Trabalho apresentado em E-MRS Spring Meeting 2015, 2015.
  38. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; M. J. Soares; A. J. Neves; E. Alves; et al. "Room temperature white light emission in annealed III-nitride multi quantum wells". Trabalho apresentado em E-MRS Spring Meeting 2015, 2015.
  39. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN:Eu3+ nanostructures for red solid state lighting". Trabalho apresentado em Research Day 2015 (University of Aveiro), 2015.
  40. M. C. Sequeira; A. Redondo-Cubero; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; A. J. Neves; et al. "Swift Heavy Ion Interaction with Group-III Nitrides". Trabalho apresentado em International Conference on Defects in Semiconductors (ICDS 2015), Espoo, Finland, 2015.
  41. M. Fialho; T. C. Esteves; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of AlGaN Films Doped with Rare Earth Ions". Trabalho apresentado em EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014.
  42. M.B. Lourenço; A. Redondo-Cubero; M. C. Sequeira; N. Franco; E. Alves; M. Sousa; T. C. Esteves; et al. "High Thermal Stability of InGaN/GaN Quantum Wells". Trabalho apresentado em EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014.
  43. M. Fialho; D. N. Faye; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of the effect of implantation temperature on AlGaN compounds implanted with rare earth ions". Trabalho apresentado em IBMM 2014 - 19th International Conference on Ion Beam Modification of Materials, 2014.
  44. M. Sousa; T. C. Esteves; J. Rodrigues; M. B. Lourenço; S.M.C. Miranda; N. Ben Sedrine; A. Redondo-Cubero; et al. "Influence of the nitrogen implantation and thermal annealing on the structural and optical properties of the green emitting InGaN/GaN MQWs". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014.
  45. M. Felizardo; M. Peres; N. Franco; D. N. Faye; E. Alves; K. Lorenz; E. Nogales; et al. "Structural and Optical Properties of GaN Nanowires and Thin Films Implanted with Eu". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Materials), 2014.
  46. J. F. C. Carreira; M. F. Leitão; J. Rodrigues; N. Ben Sedrine; M. Peres; M. Felizardo; N. Franco; et al. "Optical Studies in Eu doped ß-Ga2O3 nanostructures". Trabalho apresentado em ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014.
  47. J. Rodrigues; M. Fialho; S. Magalhães; M. R. Correia; L. Rino; E. Alves; A. J. Neves; K. Lorenz; T. Monteiro. "Spectroscopic characteristics of Tb3+ ions in AlxGa1-xN (0=x=1) layers". Trabalho apresentado em ICL’14 (17th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter), 2014.
  48. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Structural and optical characterization of AlxGa1-xN alloys doped with Rare Earth ions". Trabalho apresentado em E-MRS Spring Meeting 2014, 2014.
  49. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Optical and structural characterization of heat treated InGaN/GaN SQW and MQW for quantum well intermixing". Trabalho apresentado em E-MRS Spring Meeting 2014, 2014.
  50. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Effect of AlN content on the optical and structural properties of Rare Earth implanted AlGaN compounds". Trabalho apresentado em MRS Spring Meeting 2014, 2014.
  51. J. Rodrigues; S.M.C. Miranda; A. J. S. Fernandes; L. C. Alves; E. Alves; A. J. Neves; G. Tourbot; et al. "Luminescence sensing based on GaN NWs implanted with lanthanide ions". Trabalho apresentado em NanoPT 2014, 2014.
  52. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Investigation of the effects of heat treatments on InGaN/GaN single and multiple quantum wells (SQW, MQWs) for quantum well intermixing (QWI)". Trabalho apresentado em NanoPT 2014, 2014.
  53. J. Rodrigues; S.M.C. Miranda; A.J.S. Fernandes; E. Nogales; L.C. Alves; E. Alves; A. J. Neves; et al. "Luminescence studies in GaN nanowires implanted with lanthanide ions". Trabalho apresentado em Research day 2013 (University of Aveiro), 2013.
  54. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural studies of AlxGa1-xN alloys doped with Tm and Pr rare earth ions". Trabalho apresentado em Congresso Materiais 2013, 2013.
  55. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural characterization of AlxGa1-xN alloys doped with terbium rare earth ions". Trabalho apresentado em E-MRS Spring Meeting 2013, 2013.
  56. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Nogales; B. Méndez; J. Rodrigues; T. Monteiro; B. Lacroix. "Damage formation in non-polar GaN when host for rare earth ions". Trabalho apresentado em Física 2012- 18ª Conferência Nacional de Física (CNF), 2012.
  57. N. F. Santos; A. J. S. Fernandes; L.C. Alves; E. Alves; K. Lorenz; F. M. Costa; T. Monteiro. "Microprobe analysis, iono- and photo- luminescence of manganese activated ZnGa2O4 fibres". Trabalho apresentado em 13th International Conference Nuclear Microprobe Technology & Applications (ICNMTA 2012), 2012.
  58. J. Rodrigues; S. M. C. Miranda; N. F. Santos; A. J. Neves; E. Alves; K. Lorenz; T. Monteiro. "GaN and AlN layers co-doped with Eu and Pr ions for solid state lighting applications". Trabalho apresentado em i3N Meeting 2012, 2012.
  59. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Alves; E. Nogales; B. Méndez; et al. "Non-polar GaN as host for rare earth ions". Trabalho apresentado em ICNS-9 (9th International Conference on Nitride Semiconductors), 2011.
  60. M.-Y. Xie; V. Darakchieva; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz. "Doping of AlN micro-and nanorods with Eu3+". Trabalho apresentado em ICNS-9 (9th International Conference on Nitride Semiconductors), 2011.
  61. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; K. Lorenz; et al. "Influence of neutron irradiation and annealing on the structural and optical properties of GaN". Trabalho apresentado em E-MRS Spring Meeting 2011, 2011.
  62. M.-Y. Xie; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz; V. Darakchieva. "Optical Doping of AlN Micro- and Nanorods by Rare Earth Ions Micro". Trabalho apresentado em IWN 2010 (International Workshop on Nitride Semiconductors), 2010.
  63. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; E. Alves; et al. "The role of the annealing temperature on the optical and structural properties of Eu doped GaN QDs/AlN SL". Trabalho apresentado em E-MRS Spring Meeting 2010, 2010.
Tese / Dissertação
  1. Lorenz, Katharina. "Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)". Doutoramento, 2002.
  2. Lorenz, Katharina. "Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)". Mestrado, 1998.
Atividades

Orientação

Título / Tema
Papel desempenhado
Curso (Tipo)
Instituição / Organização
2024 - 2024 Optimizing Gallium Oxide Thin Films for Electro-Optical Applications
Coorientador de Ana Sofia Camões de Sousa
2018 - 2024 Funcionalização do MoO3 por Engenharia de Defeitos
Orientador de Daniela Filipa Rodrigues Pereira
Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 - 2023 Ga2O3 membrane nanodevices
Coorientador de Miguel Cardoso Pedro
2022 - 2023 Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations
Orientador de Luís Filipe Dias Vítor Martins
2021 - 2023 Ga2O3 field effect transistors for sensor applications
Coorientador de Miguel Eduardo Dias Vítor Martins
Universidade de Lisboa Instituto Superior Técnico, Portugal
2018 - 2023 Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance
Orientador de Dirkjan Verheij
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022 Two-dimensional MoO3 for sensor applications
Coorientador de João Guilherme Monteiro Correia
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022 Proton Irradiation effects on nanomembranes and FETs based on h-BN
Coorientador de Tiago Pardal Fernandes
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2021 Cr-doped Ga2O3 for radiation detection
Coorientador de Duarte Magalhães Esteves
Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2021 Group-III Nitrides Response to Strongly Ionising Radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN
Orientador de Miguel Pereira Carvalho Alves de Sequeira
Universidade de Lisboa Instituto Superior Técnico, Portugal
2015 - 2021 Post-doc project: Engenharia de defeitos e funcionalização de semicondutores de largo hiato energético
Orientador de Marco António Baptista Peres
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2019 PV plant performance data analysis and modelling
Coorientador de Francesca Martin
Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - 2018 Measuring strain caused by ion implantation in GaN
Orientador de Pedro José de Sousa Mendes
Universidade de Lisboa Instituto Superior Técnico, Portugal
2013 - 2018 Ion implantation in AlxGa1-xN alloys and GaN nanostructures
Orientador de Djibril Nd. Faye
Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017 Radiation sensors based on GaN microwires
Orientador de Dirkjan Verheij
Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017 Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação
Orientador de Daniela Filipa Rodrigues Pereira
Universidade Nova de Lisboa, Portugal
2015 - 2016 Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications
Orientador de Flávia Cristina Monteiro Rocha
Universidade Nova de Lisboa, Portugal
2013 - 2014 Post-doc project: Implantation of rare earths in GaN nanowires
Orientador de Miguel António Felizardo da Costa
Universidade de Lisboa Instituto Superior Técnico, Portugal
2011 - 2014 Post-doc project: Modification and characterization of advanced wide bandgap semiconductor nanostructures by ion beam techniques
Orientador de Andrés Redondo-Cubero
Universidade de Lisboa Instituto Superior Técnico, Portugal
2009 - 2013 Caracterização e modificação de heteroestruturas de nitretos do grupo III
Orientador de Sérgio Nuno Canteiro de Magalhães
Universidade de Aveiro, Portugal
2010 - 2011 Implantação de terras raras em GaN com orientação polar e não-polar
Orientador de Norberto José Sobral Catarino
Universidade de Lisboa Faculdade de Ciências, Portugal

Organização de evento

Nome do evento
Tipo de evento (Tipo de participação)
Instituição / Organização
2024 - 2024 Session “Characterization and defects in crystalline materials”, 8th European Conference on Crystal Growth ECCG 2024, 21-25 July Warsaw, Poland (2024/07/21 - 2024/07/25)
2023 - 2023 Co-Chair: Mini-Colloquium on “Tuning materials properties through controlled disorder” at the conference of the conference of the Condensed Matter Division of the European Physical Society, CMD30, September 4-8, 2023, Milan, Italy. (2023/09/04 - 2023/09/08)
2022/07/05 - 2022/07/10 22th IBMM - Ion Beam Modification of Materials, (2022/07/05 - 2022/07/10)
Conferência (Coorganizador)
2022 - 2022 Symposium “Defects, doping and processing of semiconductor nanostructures”, at the 16th International Conference on Nanostructures Materials – NANO2022, June 6-10, 2022, Seville, Spain. (2022 - 2022)
Conferência (Coorganizador)
2022 - 2022 16th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 3-6, 2022, Ponta Delgada, Portugal. The conference was held together with the 45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe. (2022 - 2022)
Conferência (Coorganizador)
2019/06/17 - 2019/06/19 Workshop Ion Beams Meet Semiconductors (SMIB 2019) (2019/06/17 - 2019/06/19)
Conferência (Presidente da Comissão Organizadora)
2018/07/04 - 2018/07/06 Symposium Wide-bandgap semiconductors, 1st Iberian Meeting on Materials Science (2018/07/04 - 2018/07/06)
Conferência (Coorganizador)
2018/06/18 - 2018/06/22 Symposium “New developments in the modelling and analysis of radiation damage in materials”, EMRS Spring Meeting (2018/06/18 - 2018/06/22)
Conferência (Coorganizador)
2016/06/06 - 2016/06/10 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (2016/06/06 - 2016/06/10)
Conferência (Coorganizador)
2015/06/25 - 2015/06/26 Workshop Ion Beams Meet Semiconductors (SMIB 2015), (2015/06/25 - 2015/06/26)
Conferência (Presidente da Comissão Organizadora)
2015/04/21 - 2015/04/25 Symposium Advanced Characterization Techniques for Ion-Beam-Induced Effects in Materials, MRS Spring Meeting (2015/04/21 - 2015/04/25)
Conferência (Coorganizador)
2013/05/27 - 2013/05/31 Symposium Functional Nanowires: Synthesis, Characterization and Applications, EMRS Spring Meeting (2013/05/27 - 2013/05/31)
Conferência (Coorganizador)
2008/04/01 - 2008/04/03 International Workshop on New Trends and Applications of Ion Beams (NTAIB-2008) (2008/04/01 - 2008/04/03)
Conferência (Coorganizador)

Participação em evento

Descrição da atividade
Tipo de evento
Nome do evento
Instituição / Organização
2023 - 2023 Defect Engineering in Wide Bandgap Semiconductors: 25th International Conference on Ion-Surface Interactions ISI-2023, on-line participation, August 21-25, 2023.
Conferência
25th International Conference on Ion-Surface Interactions
2023 - 2023 Invited talk: 4. Radiation Effects in Wide Bandgap Materials: 51st International School & Conference on the Physics of Semiconductors Jaszowiec 2023, Szczyrk, Poland, June 17-23, 2023
Conferência
Conference on the Physics of Semiconductors Jaszowiec 2023
2023 - 2023 Invited talk: Research at the Portuguese Ion Beam Laboratory: Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits, International Atomic Energy Agency, IAEA December 11, 2023
Encontro
Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits
International Atomic Energy Agency, Áustria
2023 - 2023 Invited talks: Radiation Sensors Based on Novel Wide Bandgap Semiconductor Structures: 28th International Conference on Nuclear Tracks & Radiation Measurements (ICNTRM), 6-10 November 2023, Gurugram University, Haryana, India
Conferência
International Conference on Nuclear Tracks & Radiation Measurements
2023 - 2023 Invited talk: Ion Beam Processing of Quasi-2D Oxides: 7th International Conference on Nanostructuring by Ion Beams (ICNIB 2023) November 2-4, 2023, UPES Dehradun, India
Conferência
International Conference on Nanostructuring by Ion Beams
2022 - 2022 Invited talk: Ion implantation and defect engineering in wide bandgap semiconductor nanostructures, Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials, Warsaw, Poland, September 19-22, 2022.
Conferência
Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials,
2022 - 2022 Radiation effects in gallium oxide, Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics, Warsaw, Poland, September 19-22, 2022.
Conferência
Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics
2021/01/21 - 2021/01/21 Invited Webinar: Ion Implantation and Radiation Effects in Gallium Nitride
Oficina (workshop)
EMIRUM 2021, @ EMIR Users Meeting Polytechnique Palaiseau, France
2021 - 2021 Plenary Talk Ion implantation and radiation effects in group-III nitride semiconductors
Conferência
Applied Nuclear Physics Conference, ANPC2021, Prague, Czech Republic, September 12-16, 2021.
2021 - 2021 Invited Talk: Ion beams for the development of radiation resistant semiconductors
Conferência
Particles and Nuclei International Conference, PANIC2021, virtual conference, Lisbon, Portugal, September 5-10, 2021.
2021 - 2021 Invited Talk: Radiation effects in wide bandgap semiconductors
Conferência
Spring Meeting of the European Materials Research Society (E-MRS), Symposium L: New developments in the modelling and analysis of radiation damage in materials II, Strasbourg, France, May 31-June 3, 2021.
2021 - 2021 Invited Talk: Radiation sensors based on GaN microwires
Conferência
25th International Conference on Ion-Surface Interactions ISI-2021, Yaroslavl, Russia, August 23-27, 2021.
2021 - 2021 Invited Webinar: Ion beam modification of ß-Ga2O3
Seminário
Webinar at the research network GraFOx, Berlin, Germany, June 17, 2021.
2021 - 2021 Invited Lecture: Tailoring material properties by ion implantation
Outro
Virtual Spring School on Ion Beam Modification of Materials of the European project RADIATE, Instituto Superior Técnico, April 28-30, 2021.
2020 - 2020 Invited Webinar: Ion beams in III-nitride research: Doping, characterisation and radiation resistant electronics, Semi-talk Webinar, King Abdullah University of Science and Technology, Saudi Arabia
King Abdullah University of Science and Technology, Arábia Saudita
2018 - 2018 Invited Talk Ion implantation and iono-luminescence studies in ß-Ga2O3
Conferência
SPIE Photonics West: Oxide-based Materials and Devices IX, San Francisco, USA, January 27 – February 1, 2018
2017 - 2017 Invited Talk Europium doping of Ga2O3 by ion implantation
Conferência
23rd International Conference on Ion-Surface Interactions (ISI-2017), Moscow, Russia, August 21-25, 2017
2017 - 2017 Invited Talk Radiation Effects and Quantum Well Intermixing in InGaN/GaN Multi Quantum Wells
Conferência
19th International Conference on Radiation Effects in Insulators (REI-19), Versailles, France, July 2-7, 2017
2017 - 2017 Invited Talk Ion implantation of GaN nanowires
Conferência
FOR3NANO: Formation of 3D Nanostructures by Ion Beams, Helsinki, Finland, June 28-30, 2017
2016 - 2016 Invited Talk Ion beam modification of group-III-nitride nanostructures
Conferência
20th International Conference on Ion Beam Modification of Materials (IBMM 2016), Wellington, New Zealand, October 30 - November 4, 2016
2016 - 2016 Invited Talk Compositional analysis of III-nitride ternary and quaternary alloys: Challenges and the benefit of ion beam analysis techniques
Conferência
Workshop on Ion Beam Analysis in the Commercial Environment, Rotorua, New Zealand, October 26-28, 2016
2016 - 2016 Invited Talk Ion implantation in group-III nitride semiconductors
Conferência
6th Ion Beam Analysis Francophone, IBAF-2016, Annecy, France, September 26-30, 2016
2016 - 2016 Invited Talk Técnicas de feixes de iões no desenvolvimento de materiais para a iluminação
Conferência
20ª Conferência Nacional da Física, 26º Encontro Ibérico para o ensino da Física, Universidade do Minho, Braga, Portugal, September 8 – 10, 2016
2016 - 2016 Invited Talk Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
Conferência
SPIE Photonics West, Gallium Nitride Materials and Devices XI (Conference OE107), San Francisco, USA, February 13 – 18, 2016
2015 - 2015 Invited Talk Characterization and modification of semiconductor nanostructures by ion beams
Conferência
XIII Iberian Meeting on Atomic and Molecular Physics IBER 2015, Aveiro, Portugal, September 6-9, 2015
2013 - 2013 Invited Talk Ion implantation and rare earth doping of group-III nitride semiconductors
Conferência
21st International Conference on Ion-Surface Interactions ISI-2013, Yaroslavl, Russia, August 22-26, 2013
2011 - 2011 Invited Talk Rare Earth doping of III-nitrides by ion implantation: from 3D to 0D
Conferência
Fall Meeting of the European Materials Research Society (E-MRS), Symposium J: Rare earth doped semiconductors and nanostructures for photonics, Warsaw, Poland, September 19 – 23, 2011
2011 - 2011 Invited Talk Radiation damage formation and annealing in GaN and ZnO
Conferência
SPIE Photonics West, Oxide-based Materials and Devices II (Conference 7940), San Francisco, USA, January 22 – 27, 2011
2010 - 2010 Invited Talk Ion Beam Analysis of III-Nitride Semiconductors: From Thin Films to Nano-Structures
Conferência
IX International Conference of Polish Society for Crystal Growth ICPSCG-9 and 5th International Conference on Physics of Disordered Systems PDS10, Gdansk Sobieszewo, Poland, Mai 23 – 27, 2010
2009 - 2009 Invited Talk Al1-xInxN/GaN bilayers: structure, purity and optical properties
Conferência
8th International Conference on Nitride Semiconductors, ICNS-8, Jeju, Korea, October 18 – 23, 2009
2008 - 2008 Invited Talk Rare Earth implantation of III-nitride semiconductors for light emission from IR to UV
Conferência
16th International Conference on Ion Beam Modification of Materials (IBMM 2008), Dresden, Germany, August 31 - September 5, 2008
2005 - 2005 Invited Talk RBS/Channelling analysis of GaN quantum dots in AlN Multilayers
Conferência
XVII International Conference on Ion Beam Analysis (IBA), Seville, Spain, June 26 – July 1, 2005
2005 - 2005 Invited Talk High Temperature Annealing of Rare Earth Implanted GaN-Films: Structural and Optical Properties
Conferência
Spring Meeting of the European Materials Research Society (E-MRS), Symposium C: Rare earth doped photonic materials, Strasbourg, France, May 31 – June 3, 2005

Júri de grau académico

Tema
Tipo de participação
Nome do candidato (Tipo de grau)
Instituição / Organização
2024 Two- and Three-dimensional Models of Radionuclide Migration from a Near-surface Repository
Arguente principal
Cristiana Das Neves Carvalhal (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 Nanostructuring of monocrystalline ZnO with energetic ion beams for novel optical functional materials
Arguente principal
Adéla Jagerová (Doutoramento)
Univerzita Jana Evangelisty Purkyne v Ústí nad Labem, República Checa
2023 Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance
Orientador
Dirkjan Verheij (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 Ga2O3 field effect transistors for sensor applications
Orientador
Miguel Eduardo Dias Vítor Martins (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations
Orientador
Luís Filipe Dias Vítor Martins (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2022 Micropatterning of organic materials for photosensing devices
Arguente principal
Sara Isabel Holbeche Sequeira (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2022 Irradiation of CIGS solar cells for space applications: study of tolerance and damage recovery strategies
Arguente principal
João Pedro Frazão Gomes (Mestrado)
Universidade de Aveiro, Portugal
2022 Optical centres modification in diamond: Eu3+ implantation and laser irradiation
Arguente principal
Gabriel Santiago Marques (Mestrado)
Universidade de Aveiro, Portugal
2022 Testing the radiation resistance of CIGS solar cells for space applications
Orientador
João Miguel Pereira Gaspar (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 Combining RBS/Channeling, X-ray diffraction and atomic-scale modelling to study irradiation-induced defects and microstructural changes
Arguente principal
Xin Jin (Doutoramento)
Université de Limoges, França
2021 Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN
Orientador
Miguel Pereira Carvalho Alves de Sequeira (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 Cu(In,Ga)Se2 solar cells: the impact of metastability activated by post-growth annealing
Arguente principal
Diogo Xavier da Cruz Amaral (Mestrado)
Universidade de Aveiro, Portugal
2021 Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN
Orientador
Miguel Pereira Carvalho Alves de Sequeira (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2020 Spectroscopic studies of physical properties of crystalline silicon nanoparticle systems
Arguente principal
Bruno Teixeira de Poças Falcão (Doutoramento)
Universidade de Aveiro, Portugal
2020 Emission Channeling Lattice Location Studies in Semiconductors using Highly Pixellated Timepix Detectors
Arguente principal
Eric David Bosne (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2020 Architectures based on Ga2O3 micro- and nanowires with applications in photonics
Arguente principal
Manuel Alonso Orts (Doutoramento)
Universidad Complutense de Madrid, Espanha
2019 Ion implantation in AlxGa1-xN alloys and GaN nanostructures
Orientador
Djibril Nd. Faye (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 Material and process engineering for cost-effective silicon technologies
Vogal
Zhengjun Liu (Doutoramento)
Aalto-yliopisto, Finlândia
2019 Semiconductor Triplet Sensitizer for Triplet Fusion Upconversion
Arguente principal
Frederik Eistrup (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 PV plant performance data analysis and modelling
Orientador
Francesca Martin (Mestrado)
2018 Lattice location of impurities in Silicon Carbide
Arguente principal
Ângelo Rafael Granadeiro Costa (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2018 Optical and temporal carrier dynamics investigations of III- nitrides for semiconductor lighting
Arguente principal
Idris A. Ajia (Doutoramento)
King Abdullah University of Science and Technology, Arábia Saudita
2018 Micro y nanoestructuras de óxido de estaño y sus nanocompuestos con óxido de grafeno: síntesis, luminiscencia y aplicaciones en energía
Vogal
Félix del Prado Hurtado (Doutoramento)
Universidad Complutense de Madrid, Espanha
2018 Síntese e Caracterização de 2D-MoS2
Arguente principal
Ana Rita de Campos Pereira (Mestrado)
Universidade de Aveiro, Portugal
2018 Local probe studies in Jahn-Teller distorted manganites
Arguente principal
Ricardo César Carvalho Teixeira (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN
Arguente principal
Maria Isabel Fialho (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 Caracterização Ótica de Nanofios de AlN Implantados com Európio
Arguente principal
José Pedro de Sousa Cardoso (Mestrado)
Universidade de Aveiro, Portugal
2017 Radiation sensors based on GaN microwires
Orientador
Dirkjan Verheij (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação
Orientador
Daniela Filipa Rodrigues Pereira (Mestrado)
Universidade Nova de Lisboa, Portugal
2016 Estudo da luminescência de nanopartículas de ZnGa2O4:Cr3+ produzidas por Ablação por Laser Pulsado em Meio Líquido
Arguente principal
Maria da Silva Relvas (Mestrado)
Universidade de Aveiro, Portugal
2015 ZnO and GaN nanostructures for optoelectronic applications: synthesis and characterization
Arguente principal
Joana Catarina Ferreira Rodrigues (Doutoramento)
Universidade de Aveiro, Portugal
2015 Estudios de nitruros aleados mediante técnicas de haces de electrones: imagen, difracción y espectroscopía
Vogal
Daniel Carvalho (Doutoramento)
Universidad de Cádiz, Espanha
2015 Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications
Orientador
Flávia Cristina Monteiro Rocha (Mestrado)
Universidade Nova de Lisboa, Portugal
2014 Síntesis, propiedades físicas y dopado de micro- y nanoestructuras de Bi2O3 y MoO3
Arguente principal
Maria Vila Santos (Doutoramento)
Universidad Complutense de Madrid, Espanha
2014 Propiedades físicas y dopado de nanoestructuras de óxido de galio
Arguente principal
Iñaki Lopez Garcia (Doutoramento)
Universidad Complutense de Madrid, Espanha
2014 Lattice location of transition metals in silicon by means of emission channeling
Arguente principal
Daniel José da Silva (Doutoramento)
Universidade do Porto, Portugal
2014 Síntesis y caracterización de micro- y nanoestructuras de ZnS:X (X=Al, Ga, In)
Vogal
Belén Sotillo Buzarra (Doutoramento)
Universidad Complutense de Madrid, Espanha
2014 Caracterização de nanocristais de SnO2 e SnO2:Eu crescidos por LAFD
Arguente principal
Ana Isabel da Costa Viegas Sena (Mestrado)
Universidade de Aveiro, Portugal
2013 Caracterização e Modificação de Heteroestruturas de Nitretos do Grupo-III
Orientador
Sérgio Nuno Magalhães (Doutoramento)
Universidade de Aveiro, Portugal
2013 Síntese e caracterização de nano emissores de YAG:Dy para LEDs
Arguente principal
Paulo Manuel Figueiras Forte (Mestrado)
Universidade de Aveiro, Portugal
2012 Croissance et caractérisations structurales e optiques d’hétérostructures de nitrures d’éléments III émettant dans l’UV
Arguente principal
Vincent Fellmann (Doutoramento)
Université de Grenoble École Doctorale de Physique, França
2012 Daniela Filipa Rodrigues Pereira
Arguente principal
Denis Jalabert (Agregação)
Université Grenoble Alpes, França
2011 Implantação de terras raras em GaN com orientação polar e não-polar
Orientador
Norberto José Sobral Catarino (Mestrado)
Universidade de Lisboa Faculdade de Ciências, Portugal
2010 Structural and compositional characterization of wide bandgap semiconductor heterostructures by ion beam analysis
Arguente principal
Andrés Redondo-Cubero (Doutoramento)
Universidad Autónoma de Madrid, Espanha
2010 Crescimento e caracterização de fibras de TiO2 e nano/microcristais de ZnO
Arguente principal
Joana Catarina Ferreira Rodriques (Mestrado)
Universidade de Aveiro, Portugal
2010 Implementation of “ab initio” Perturbed Angular Correlation observables for analysis of fluctuating quadrupole interactions
Arguente principal
Marcelo Barbosa (Mestrado)
Universidade do Porto, Portugal
2008 Comportement des semiconducteurs de structure wurtzite à base d'azote sous implantation d’ions terres rares de moyenne énergie
Arguente principal
Florence Gloux (Doutoramento)
Université de Caen Normandie, França

Arbitragem científica em conferência

Nome da conferência Local da conferência
2022 - Atual International Conference on Ion Beam Modification of Materials
2018 - Atual EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
2018 - Atual Física 2018/2020/2022 (Physics Conference organised by the Portuguese Physics Society)
2024 - 2024 CMD31-General Conference of the Condensed Matter Division of the EPS, Braga, Portugal
2021 - 2021 3rd Condensed Matter Physics National Conference, Lisboa, Portugal Portuguese Physical Society
2017 - 2017 20th International Conference on Surface Modification of Materials by Ion Beams Lisbon, Portugal
2015 - 2015 28th International Conference on Defects in Semiconductors Aalto University, Finland
2015 - 2015 XIII Iberian Joint Meeting on Atomic and Molecular Physics (IBER2015) University of Aveiro, Portugal
2012 - 2015 "Oxide-based Materials and Devices" conferences, editions III (2012), IV (2013), V (2014) and VI (2015), SPIE OPTO, San Francisco, USA.

Comissão de avaliação

Descrição da atividade
Tipo de assessoria
Instituição / Organização Entidade financiadora
2021 - Atual Member of the Selection Panel in charge of allocating beam time to the proposals submitted to the iPAC (Interdisciplinary Program Advisory Committee) of GANIL (Grand Accélérateur National d'Ions Lourds)
Avaliador
2020 - Atual Reviewer for book proposal of IOP eBooks IOP Publishing Ltd, Reino Unido
2019 - Atual Member of the EMIR&A Scientific committee French National network of accelerators for irradiation and analysis of molecules and materials , França
2014 - Atual Member of the User Selection Panel at the Ion Beam Centre, Helmholtz-Zentrum Dresden-Rossendorf, Germany.
Avaliador
Helmholtz-Zentrum Dresden-Rossendorf, Alemanha
2012 - Atual Evaluator of research projects of several funding agencies: Agence Nationale de la Recherche (ANR), France; National Science Centre, Poland; National Research Foundation, South Africa; National Science Foundation (NSF), USA; German Academic Exchange Service DAAD; Marsden Fund Council, New Zealand; Scientific Counsel of Latvia Agence nationale de la recherche

Deutscher Akademischer Austauschdienst Dienst

National Science Centre Poland

National Research Foundation

National Science Foundation

Marsden Fund Council

Scientific Counsel of Latvia
2011 - Atual Member of the Panel of Reviewers of beamtime proposal at Centro de Micro-Análisis de Materiales, Madrid, Spain
Avaliador
Universidad Autónoma de Madrid, Espanha
2019 - 2022 Member of the ISOLDE and Neutron Time-of-Flight Experiments Committee - INTC - CERN
Avaliador
European Organization for Nuclear Research, Suiça

Consultoria / Parecer

Descrição da atividade Instituição / Organização
2019 - 2022 Member of the Advisory Editorial Board of Nuclear Inst. and Methods in Physics Research, B

Curso / Disciplina lecionado

Disciplina Curso (Tipo) Instituição / Organização
2018 - Atual Advanced Characterization of Functional Materials Instituto Superior Técnico Departamento de Física, Portugal
2018 - Atual Photovoltaic Solar Energy Instituto Superior Técnico Departamento de Física, Portugal
2018 - Atual Physics and Technology of Semiconductors Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2021 Materials Science for Nuclear Technologies Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2018 Electromagnetism and Optics Instituto Superior Técnico Departamento de Física, Portugal
2012 - 2017 Mechanics and Waves Instituto Superior Técnico Departamento de Física, Portugal

Membro de associação

Nome da associação Tipo de participação
2020 - Atual União dos Físicos dos Países de Língua Portuguesa (UFPLP) member
2019 - Atual European Physical Society (EPS) member
2005 - Atual Portuguese Physics Society (SPF) since 2017: Member of the committee of the Nuclear Physics section; 2019-2022 treasurer
1998 - Atual German Physics Society (DPG) member

Membro de comissão

Descrição da atividade
Tipo de participação
Instituição / Organização
2023 - Atual Member of Executive Board European Physical Society (EPS)
Membro
2023 - Atual Member of Executive Board European Nuclear Education Network (ENEN)
Membro
2023 - Atual President of the Department of Nuclear Sciences and Engineering of IST
Presidente / Vice-presidente
Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - Atual Member of the committee of the Nuclear Physics section of the Portuguese Physics Society
Membro
Portuguese Physics Society, Portugal
2021/01 - 2022/12/31 Member and secretary of the scientific council of Instituto Superior Técnico, U. Lisboa
Membro
Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022 Representative of DECN in the “Comissão de Equivalências” of IST, commission to evaluate the requests of recognition of foreign academic degrees
Membro
Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022 Representative of DECN in the “Comissão Conjunta do Científico e Pedagógico para o 3º ciclo” of IST, commission to redefine the doctoral programs of IST
Membro
Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022 Member of the Commission to implement the JUNO (bachelor) and SCOPE (masters) Capstone projects according to the new Teaching Model and Pedagogical Practices 2021/2022 (MEPP) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2022 Member of the Executive Commission of the Department of Nuclear Sciences and Engineering of IST
Membro
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2022 Member of the Directive Board of the Portuguese Physics Society
Membro
Portuguese Physics Society, Portugal
2021 - 2021 Representative of DECN in the Commission of Department Communication of IST
Membro
Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2020 Member of the Ad-Hoc.Commission “Projecto Integrador de 1º ciclo (PIC1)/Projecto Capstone 2º ciclo” of PercIST (Princípios enquadradores para a reestruturação dos cursos de 1º e 2º ciclo do Instituto Superior Técnico 2122): Interdepartamental commission of IST to implement Project based learning initiatives
Membro
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020 Substitute member of the Ad-Hoc.Commission “Minors multidisciplinares/transversais ao nível do 2.º ciclo” of PercIST: Interdepartamental commission of IST to implement multidisciplinary Minors as optional specialization for all master degree courses of IST
Outro
Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020 Member of the Working Group to establish Minors offered by the Department of Nuclear Sciences and Engineering
Membro
Universidade de Lisboa Instituto Superior Técnico, Portugal

Tutoria

Tópico Nome do aluno
2020 - 2022 Highly sensitive organic photosensor for advanced wireless light communication Sara Sequeira
2013 - 2017 Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN Maria Isabel Fialho
Distinções

Prémio

2020 Scientific Award Universidade de Lisboa / Caixa Geral de Depósitos in the area of Physics and Materials Science
Caixa Geral de Depositos, Portugal

Universidade de Lisboa, Portugal

Título

2020 Docente Excelente - 2018/2019
Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 Visiting Professor
University of Strathclyde Department of Department of Physics, Reino Unido
2014 Visiting Professor
University of Strathclyde Department of Department of Physics, Reino Unido