???global.info.a_carregar???
Pedro Freitas was introduced to the topic of memristive devices during is MSc project at NOVA University of Lisbon (2016) and he has been working in this field ever since. Currently he is on the final stages of his PhD degree at Liverpool John Moores University (LJMU), UK, where he works in close collaboration with the Interuniversity Microelectronics Centre (IMEC), Belgium. His work includes two complementing paths: the first focuses on advanced electrical characterization techniques applied to memristive devices such as Random Telegraph Noise (RTN) and 1/f noise measurements, while the second is an application driven approach towards the simulation of neuromorphic systems, that can accommodate the measured non-idealities of the memristive devices, using both backpropagation based learning and limited precision based alternatives for efficient Neural Network implementation. His work has led to contributions in 7 IEEE co-authored papers with IMEC, 1 co-authored paper in Nature Communications in collaboration with University College London (UCL), UK and 1 co-authored Nature Scientific Reports paper.
Ler resumo completo ↓
Identificação

Identificação pessoal

Nome completo
Pedro Freitas

Nomes de citação

  • Freitas, Pedro

Identificadores de autor

Ciência ID
ED12-6A9B-178F
ORCID iD
0000-0002-1338-1450
Google Scholar ID
https://scholar.google.pt/citations?user=CFGpdZAAAAAJ&hl=pt-PT

Domínios de atuação

  • Ciências da Engenharia e Tecnologias - Engenharia Eletrotécnica, Eletrónica e Informática

Idiomas

Idioma Conversação Leitura Escrita Compreensão Peer-review
Português (Idioma materno)
Inglês Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador independente (B2) Utilizador proficiente (C1) Utilizador proficiente (C1)
Formação
Grau Classificação
2017/10/02 - 2022/02/02
Em curso
 Electrical and Electronic Engineering (Doctor)
Especialização em Microelectronics
Liverpool John Moores University, Reino Unido
"Neuromorphic systems using limited precision implemented with memristors" (TESE/DISSERTAÇÃO)
2010/09/01 - 2016/07/24
Concluído
 Engenharia de Micro e Nanotecnologias (Mestrado integrado)
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
"Conductive bridging RAM devices inspired on solid-state biopolymer electrolytes" (TESE/DISSERTAÇÃO)
 16
Percurso profissional

Ciência

Categoria Profissional
Instituição de acolhimento 		Empregador
2019/09/15 - 2019/12/15 Investigador visitante (Investigação) Liverpool John Moores University, Reino Unido
Interuniversitair Micro-Elektronica Centrum, Bélgica
2016/09/01 - 2017/01/01 Investigador Contratado (Investigação) Universidade Nova de Lisboa UNINOVA Instituto de Desenvolvimento de Novas Tecnologias, Portugal
Universidade Nova de Lisboa UNINOVA Instituto de Desenvolvimento de Novas Tecnologias, Portugal
Produções

Publicações

Artigo em revista
  1. Zheng Chai; Pedro Freitas; Wei Dong Zhang; Firas Hatem; Robin Degraeve; Sergiu Clima; Jian Fu Zhang; et al. "Stochastic Computing Based on Volatile GeSe Ovonic Threshold Switching Selectors". IEEE Electron Device Letters 41 10 (2020): 1496-1499. https://doi.org/10.1109/LED.2020.3017095.
    10.1109/LED.2020.3017095
  2. James Brown; Jian Fu Zhang; Bo Zhou; Mehzabeen Mehedi; Pedro Freitas; John Marsland; Zhigang Ji. "Random-telegraph-noise-enabled true random number generator for hardware security". Scientific Reports 10 1 (2020): https://doi.org/10.1038%2Fs41598-020-74351-y.
    10.1038/s41598-020-74351-y
  3. D. Joksas; P. Freitas; Z. Chai; W. H. Ng; M. Buckwell; C. Li; W. D. Zhang; et al. "Committee machines—a universal method to deal with non-idealities in memristor-based neural networks". Nature Communications 11 1 (2020): https://doi.org/10.1038%2Fs41467-020-18098-0.
    10.1038/s41467-020-18098-0
  4. Zheng Chai; Pedro Freitas; John Marsland; Andrea Fantini; Daniele Garbin; Ludovic Goux; Gouri Sankar Kar; et al. "GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator". IEEE Electron Device Letters 41 2 (2020): 228-231. https://doi.org/10.1109/LED.2019.2960947.
    10.1109/LED.2019.2960947
  5. Zheng Chai; Weidong Zhang; Robin Degraeve; Sergiu Clima; Firas Hatem; Jian Fu Zhang; Pedro Freitas; et al. "Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors". IEEE Electron Device Letters 40 8 (2019): 1269-1272. https://doi.org/10.1109/LED.2019.2924270.
    10.1109/LED.2019.2924270
  6. Zheng Chai; Pedro Freitas; Weidong Zhang; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar. "Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network". IEEE Electron Device Letters (2018): 1-1. https://doi.org/10.1109/LED.2018.2869072.
    10.1109/LED.2018.2869072
  7. Zheng Chai; Weidong Zhang; Pedro Freitas; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; et al. "The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique". IEEE Electron Device Letters 39 7 (2018): 955-958. https://doi.org/10.1109%2Fled.2018.2833149.
    10.1109/led.2018.2833149

Outros

Outra produção
  1. Impact of RTN and Variability on RRAM-Based Neural Network. 2020. P. Freitas; Z. Chai; W. Zhang; J. F. Zhang; J. Marsland. https://doi.org/10.1109%2Ficsict49897.2020.9278290.
    10.1109/icsict49897.2020.9278290
  2. Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors. 2019. Z. Chai; W. Zhang; R. Degraeve; S. Clima; F. Hatem; J. F. Zhang; P. Freitas; et al. https://doi.org/10.23919%2Fvlsit.2019.8776566.
    10.23919/vlsit.2019.8776566
  3. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. 2019. F. Hatem; J. F. Zhang; J. Marsland; P. Freitas; L. Goux; G. S. Kar; Z. Chai; et al. https://doi.org/10.1109%2Fiedm19573.2019.8993448.
    10.1109/iedm19573.2019.8993448
Atividades

Consultoria / Parecer

Descrição da atividade Instituição / Organização
2019/09/15 - 2019/12/15 Caracterização de ruído em dispositivos baseados em óxidos semicondutores Interuniversitair Micro-Elektronica Centrum, Bélgica
2016/09/01 - 2017/01/01 Produção e caracterização de memórias resistivas Formação de alunos de mestrado e doutoramento na caracterização de memórias resistivas Universidade Nova de Lisboa UNINOVA Instituto de Desenvolvimento de Novas Tecnologias, Portugal