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Sérgio Nuno Canteiro de Magalhães (SM) is a DL57 researcher at the Instituto Superior Técnico, Lisbon, Portugal under the 16/IPFN contract. The contract was attributed to the Development of models to study the effects of ion-implanted nano-materials using X-rays and ion beams. MROX, an acronym for Multiple Reflection Optimization package for X-ray diffraction is one of the codes developed and has been the center of the scientific activities of SM. MROX, in its last version (published in March 2021), combines the simulation (and fitting) of simultaneous symmetric and asymmetric reflections being the only one in the world with that feature. Another important developed software is the LdCWH, an acronym for Layer de-Convolution method for the Williamson-Hall novel method, published in February 2021. It is also attracting attention due to its importance not only at the scientific but also at industrial levels due to its application to polycrystalline materials as well. The developed codes are the core of the proposed application. The year 2023 has been the best year for SM in terms of research outputs: 2 manuscripts as the first author were accepted and another was recently submitted as the first author. Formally, 2 Master's degree students supervised by SM focussed their X-ray analysis of implanted nitrides in the software while several other Ph.D. students from the hosting Institution are recurrently using MROX to simulate their data. Moreover, during their scientific career, SM guided more than 12 students, in particular, concerning the measurements and analysis of their X-ray data. More recently, SM started to give lectures on Electromagnetism and Optics at the Instituto Superior Técnico and was evaluated by the students with 8.69 (1-9). Finally, SM participated in several R&D Projects and several International Conferences with more than 6 oral presentations.
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Identificação

Identificação pessoal

Nome completo
Sérgio Canteiro de Magalhães
Data de nascimento
1976/10/07
Género
Masculino

Nomes de citação

  • Magalhães, Sérgio

Identificadores de autor

Ciência ID
5513-8ABC-0F90
ORCID iD
0000-0002-5858-549X

Endereços de correio eletrónico

  • smagalhaes@ctn.tecnico.ulisboa.pt (Profissional)
  • smagalhaes@ctn.ist.utl.pt (Profissional)

Telefones

Telefone
  • 219946109 (Profissional)

Websites

Domínios de atuação

  • Ciências Exatas - Física
  • Ciências Exatas - Física - Física da Matéria Condensada

Idiomas

Idioma Conversação Leitura Escrita Compreensão Peer-review
Inglês Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador independente (B1) Utilizador proficiente (C1)
Português Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1) Utilizador proficiente (C1)
Francês Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1)
Alemão Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1) Utilizador elementar (A1)
Espanhol; Castelhano Utilizador elementar (A2) Utilizador elementar (A2) Utilizador elementar (A2) Utilizador independente (B1) Utilizador elementar (A1)
Formação
Grau Classificação
2009 - 2013
Concluído
 Programa Doutoral em Engenharia Física (3º ciclo) (Doutoramento)
Universidade de Aveiro, Portugal
"Caracterização e modificação de heteroestruturas de nitretos do grupo III" (TESE/DISSERTAÇÃO)
 Aprovado
2005 - 2007
Concluído
 Mestrado em Ciência e Engenharia de Materiais (Mestrado)
Universidade de Lisboa Instituto Superior Técnico, Portugal
"Estudo de ilhas quânticas semicondutoras" (TESE/DISSERTAÇÃO)
 Aprovado
2004
Concluído
 Licenciatura em Engenharia Física (Licenciatura)
Universidade de Aveiro, Portugal
"Estudo da implantação de argon em super-redes de GaAs-AlAs" (TESE/DISSERTAÇÃO)
Percurso profissional

Ciência

Categoria Profissional
Instituição de acolhimento 		Empregador
2019/03/01 - Atual Investigador Contratado (Investigação) Instituto de Plasmas e Fusão Nuclear, Portugal
Instituto de Plasmas e Fusão Nuclear, Portugal
2013 - 2013 Investigador (Investigação) Instituto de Nanociencia e Nanotecnologia, Portugal
2005/01/01 - 2009/03/31 Investigador (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

Outros

Categoria Profissional
Instituição de acolhimento 		Empregador
2019/01/01 - 2019/02/28 bolseiro de pós-doutoramento Fundação para a Ciência e a Tecnologia, Portugal
2018 - 2019 bolseiro de pós-doutoramento da FCT Fundação para a Ciência e a Tecnologia, Portugal
2017 - 2018 bolseiro de pós-doutoramento Fundação para a Ciência e a Tecnologia, Portugal
2014/08/01 - 2017/07/31 Bolsa de Pós-doutoramento da FCT Universidade de Lisboa Instituto Superior Técnico, Portugal
2013/11/06 - 2014/06/30 Bolseiro de Pós-doutoramento Universidade do Porto Faculdade de Ciências, Portugal
2013/05/15 - 2013/08/15 Bolsa de Pós-doutoramento Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
2009/04/01 - 2013/03/31 Bolsa de doutoramento da FCT Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2010 - 2012 bolseiro Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
2009 - 2012 bolseiro Instituto de Nanoestruturas Nanomodelação e Nanofabricação, Portugal
2008 - 2008 bolseiro Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
2007 - 2007 bolseiro Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
2007 - 2007 bolseiro Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
Projetos

Bolsa

Designação Financiadores
2006 - Atual New biomarkers from nc II-VI semiconductors
POCTI/CTM/45236/2002
Bolseiro de Mestrado
2005 - Atual Optical study of doping on large band gap semiconductor materials
POCTI/CTM/45236/2002
Bolseiro de Mestrado
2013/11/06 - 2014/06/30 Advanced characterization of multifunctional nanomaterials using reciprocal space and direct space techniques
NORTE-07-0124-FEDER-000070-Functional nanomaterials
Bolseiro de Pós-Doutoramento
2013/05/15 - 2013/08/15 Development of a routine to model the roughness for ion beam analysis
Project /CC 4098 SPIRIT
Bolseiro de Pós-Doutoramento
2009/03/21 - 2013/03/20 Characterization and modification of group-III nitrides quantum heterostructures
SFRH/BD/98737
Bolseiro de Doutoramento
2008/06/01 - 2010/05/31 Ternary and quaternary nitride alloys for lattice matched heterostructures: Novel materials for high efficiency field effect transistors and optoelectronic devices
PTDC/FIS/65233/2006
Bolseiro de Mestrado

Outro

Designação Financiadores
2018/06/15 - 2021/06/14 Plasmas and Nuclear Fusion Institute
UIDB/50010/2020 | UIDP/50010/2020
Investigador
2018/06/15 - 2021/06/14 Nano-engineering of wide bandgap Semiconductors using Ion Beams
Fundação para a Ciência e Tecnologia (15% dedicated time)
Investigador
2008/01/01 - 2008/12/31 Rare Earth doped GaN quantum dots for efficient light emitters
in Technological and Nuclear Campus, Superior Technical Institute Bilateral Project / CEA, Grenoble, France : GRICES/ EGIDE . Bilateral Project.
Bolseiro de Mestrado
Produções

Publicações

Artigo em revista
  1. Afonso Caçador; P. Józwik; S. Magalhães; J.G. Marques; E. Wendler; K. Lorenz. "Extracting defect profiles in ion-implanted GaN from ion channeling". Materials Science in Semiconductor Processing (2023): http://dx.doi.org/10.1016/j.mssp.2023.107702.
    10.1016/j.mssp.2023.107702
  2. Marcin Stachowicz; J.M. Sajkowski; M.A. Pietrzyk; D.Nd. Faye; S. Magalhaes; E. Alves; A. Reszka; A. Pieniazek; A. Kozanecki. "Investigation of interdiffusion in thin films of ZnO/ZnCdO grown by molecular beam epitaxy". Thin Solid Films (2023): http://dx.doi.org/10.1016/j.tsf.2023.140003.
    10.1016/j.tsf.2023.140003
  3. S Magalhães; J S Cabaço; O Concepción; D Buca; M Stachowicz; F Oliveira; M F Cerqueira; K Lorenz; E Alves. "Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors". Journal of Physics D: Applied Physics (2023): https://doi.org/10.1088/1361-6463/acc597.
    10.1088/1361-6463/acc597
  4. S. Magalhães; R. Mateus; M. Dias; C. Porosnicu; O.G. Pompilian; E. Alves. "Modelling the strain build-up in nitrogen implanted tungsten films on silicon substrates". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2023): https://doi.org/10.1016/j.nimb.2023.02.006.
    10.1016/j.nimb.2023.02.006
  5. S. Magalhães; C. Cachim; P. D. Correia; F. Oliveira; F. Cerqueira; J. M. Sajkowski; M. Stachowicz. "MROX 2.0: a software tool to explore quantum heterostructures by combining X-ray reflectivity and diffraction". CrystEngComm (2023): https://doi.org/10.1039/D3CE00371J.
    10.1039/D3CE00371J
  6. M. Dias; S. Magalhães; F. Antão; R.C. da Silva; A.P. Gonçalves; P.A. Carvalho; J.B. Correia; A. Galatanu; E. Alves. "Damage threshold of CuCrFeTiV high entropy alloys for nuclear fusion reactors". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2022): https://doi.org/10.1016/j.nimb.2022.09.003.
    10.1016/j.nimb.2022.09.003
  7. S Magalhães; M Dias; B Nunes; F Oliveira; M F Cerqueira; E Alves. "Confronting Vegard’s rule in Ge1-x Sn x epilayers: from fundamentals to the effect of defects". Journal of Physics D: Applied Physics (2022): https://doi.org/10.1088/1361-6463/ac677a.
    10.1088/1361-6463/ac677a
  8. Stachowicz, M.; Wierzbicka, A.; Sajkowski, J.M.; Pietrzyk, M.A.; Dluzewski, P.; Dynowska, E.; Dyczewski, J.; et al. "Structural analysis of the ZnO/MgO superlattices on a-polar ZnO substrates grown by MBE". Applied Surface Science 587 (2022): 152830. http://dx.doi.org/10.1016/j.apsusc.2022.152830.
    10.1016/j.apsusc.2022.152830
  9. Przemyslaw Józwik; José P. S. Cardoso; Diogo F. Carvalho; Maria R. P. Correia; Miguel C. Sequeira; Sérgio Magalhães; Djibril Nd. Faye; et al. "Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation". Physical Chemistry Chemical Physics (2022): https://doi.org/10.1039/D2CP02526D.
    10.1039/D2CP02526D
  10. Magalhães, Sergio; Salgado Cabaço, João; Araujo, Joao P; Alves, Eduardo; Magalhães, Sérgio. "Multiple Reflection optimization package for X-ray diffraction". CrystEngComm (2021): http://dx.doi.org/10.1039/d1ce00204j.
    10.1039/d1ce00204j
  11. Salgado Cabaço, João; Faye, D. Nd.; Araujo, Joao Pedro; Alves, Eduardo; Magalhães, Sérgio; Magalhães, Sérgio. "Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN". Journal of Physics D: Applied Physics (2021): http://dx.doi.org/10.1088/1361-6463/abee44.
    10.1088/1361-6463/abee44
  12. Marciel, Alice; Graça, Manuel; Bastos, Alexandre; Pereira, Luiz; Suresh Kumar, Jakka; Borges, Joel; Vaz, Filipe; et al. "Molybdenum Oxide Thin Films Grown on Flexible ITO-Coated PET Substrates". Materials 14 4 (2021): 821. http://dx.doi.org/10.3390/ma14040821.
    10.3390/ma14040821
  13. Magalhães, Sérgio; Magalhães, S.; Cabaço, J. S.; Mateus, R.; Faye, D. Nd.; Pereira, D. R.; Peres, M.; et al. "Crystal mosaicity determined by a novel layer de-convolution Williamson-Hall method". CrystEngComm 23 10 (2021): 2048-2062. https://pubs.rsc.org/en/content/articlelanding/2021/ce/d0ce01669a/unauth#!divAbstract.
    10.1039/D0CE01669A
  14. Pereira, D.R.; Magalhães, S.; Díaz-Guerra, C.; Peres, M.; Correia, J.G.; Marques, J.G.; Silva, A.G.; et al. "Estimating the uncertainties of strain and damage analysis by X-ray diffraction in ion implanted MoO3". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 478 (2020): 290-296. http://dx.doi.org/10.1016/j.nimb.2020.07.016.
    10.1016/j.nimb.2020.07.016
  15. Teixeira, B M S; Timopheev, A A; Caçoilo, N; Cuchet, L; Mondaud, J; Childress, J R; Magalhães, S; Alves, E; Sobolev, N A. "Ar+ ion irradiation of magnetic tunnel junction multilayers: impact on the magnetic and electrical properties". Journal of Physics D: Applied Physics 53 45 (2020): 455003. http://dx.doi.org/10.1088/1361-6463/aba38c.
    10.1088/1361-6463/aba38c
  16. Quitério, Paula; Apolinário, Arlete; Navas, David; Magalhães, Sérgio; Alves, Eduardo; Mendes, Adélio; Sousa, Célia Tavares; Araújo, João Pedro. "Photoelectrochemical Water Splitting: Thermal Annealing Challenges on Hematite Nanowires". The Journal of Physical Chemistry C 124 24 (2020): 12897-12911. http://dx.doi.org/10.1021/acs.jpcc.0c01259.
    10.1021/acs.jpcc.0c01259
  17. Stachowicz, M.; Sajkowski, J.M.; Kryvyi, S.; Pieniazek, A.; Reszka, A.; Wierzbicka, A.; Pietrzyk, M.A.; et al. "Study of structural and optical properties of MBE grown nonpolar (10-10) ZnO/ZnMgO photonic structures". Optical Materials 100 (2020): 109709. http://dx.doi.org/10.1016/j.optmat.2020.109709.
    Publicado • 10.1016/j.optmat.2020.109709
  18. Mendes, P.; Lorenz, K.; Alves, E.; Schwaiger, S.; Scholz, F.; Magalhães, S.. "Measuring strain caused by ion implantation in GaN". Materials Science in Semiconductor Processing 98 (2019): 95-99. http://dx.doi.org/10.1016/j.mssp.2019.04.001.
    Publicado • 10.1016/j.mssp.2019.04.001
  19. Rodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.. "Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb". Journal of Luminescence 210 (2019): 413-424. http://dx.doi.org/10.1016/j.jlumin.2019.02.060.
    Publicado • 10.1016/j.jlumin.2019.02.060
  20. Jozwik, Przemyslaw; Magalhães, Sergio; Ratajczak, Renata; Mieszczynski, Cyprian; Sequeira, Miguel; Turos, Andrzej; Böttger, Roman; et al. "RBS/C, XRR, and XRD Studies of Damage Buildup in Er-Implanted ZnO". physica status solidi (b) 256 5 (2019): 1800364. http://dx.doi.org/10.1002/pssb.201800364.
    Publicado • 10.1002/pssb.201800364
  21. Pereira, Daniela R.; Díaz-Guerra, Carlos; Peres, Marco; Magalhães, Sérgio; Correia, João G.; Marques, José G.; Silva, Ana G.; Alves, Eduardo; Lorenz, Katharina. "Engineering strain and conductivity of MoO3 by ion implantation". Acta Materialia 169 (2019): 15-27. http://dx.doi.org/10.1016/j.actamat.2019.02.029.
    Publicado • 10.1016/j.actamat.2019.02.029
  22. Ben Sedrine, N.; Rodrigues, J.; Cardoso, J.; Faye, D.Nd.; Fialho, M.; Magalhães, S.; Martins, A.F.; et al. "Optical investigations of europium ion implanted in nitride-based diode structures". Surface and Coatings Technology 355 (2018): 40-44. http://dx.doi.org/10.1016/j.surfcoat.2018.02.004.
    10.1016/j.surfcoat.2018.02.004
  23. Faye, D. Nd.; Döbeli, M.; Wendler, E.; Brunner, F.; Weyers, M.; Magalhães, S.; Alves, E.; Lorenz, K.. "Crystal damage analysis of implanted AlxGa1-xN (0¿=¿x¿=¿1) by ion beam techniques". Surface and Coatings Technology 355 (2018): 55-60. http://dx.doi.org/10.1016/j.surfcoat.2018.01.020.
    10.1016/j.surfcoat.2018.01.020
  24. Fialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.. "Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures". Surface and Coatings Technology 355 (2018): 29-39. http://dx.doi.org/10.1016/j.surfcoat.2018.02.008.
    10.1016/j.surfcoat.2018.02.008
  25. Magalhaes, S.; Franco, N.; Watson, I. M.; Martin, R. W.; O'Donnell, K. P.; Schenk, H. P. D.; Tang, F.; et al. "Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates". Journal of Physics D-Applied Physics 50 20 (2017): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000400407300002&KeyUID=WOS:000400407300002.
    Publicado • 10.1088/1361-6463/aa69dc
  26. Rodrigues, J.; Fialho, M.; Magalhaes, S.; Correia, M. R.; Rino, L.; Alves, E.; Neves, A. J.; Lorenz, K.; Monteiro, T.. "Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers". Journal of Luminescence 178 (2016): 249-258. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000381643300035&KeyUID=WOS:000381643300035.
    Publicado • 10.1016/j.jlumin.2016.05.018
  27. Fialho, M.; Magalhaes, S.; Chauvat, M. P.; Ruterana, P.; Lorenz, K.; Alves, E.. "Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium". Journal of Applied Physics 120 16 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000387580600066&KeyUID=WOS:000387580600066.
    Publicado • 10.1063/1.4966120
  28. Faye, D. Nd.; Fialho, M.; Magalhaes, S.; Alves, E.; Ben Sedrine, N.; Rodrigues, J.; Correia, M. R.; et al. "Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 379 (2016): 251-254. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000379093800049&KeyUID=WOS:000379093800049.
    Publicado • 10.1016/j.nimb.2016.03.028
  29. Magalhaes, S.; Fialho, M.; Peres, M.; Lorenz, K.; Alves, E.. "Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N". Journal of Physics D-Applied Physics 49 13 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000371908800022&KeyUID=WOS:000371908800022.
    10.1088/0022-3727/49/13/135308
  30. Faye, D. Nd.; Wendler, E.; Felizardo, M.; Magalhaes, S.; Alves, E.; Brunner, F.; Weyers, M.; Lorenz, K.. "Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds". Journal of Physical Chemistry C 120 13 (2016): 7277-7283. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000373862700040&KeyUID=WOS:000373862700040.
    10.1021/acs.jpcc.6b00133
  31. Fialho, M.; Rodrigues, J.; Magalhaes, S.; Correia, M. R.; Monteiro, T.; Lorenz, K.; Alves, E.. "Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds". Semiconductor Science and Technology 31 3 (2016): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000372423200030&KeyUID=WOS:000372423200030.
    Publicado • 10.1088/0268-1242/31/3/035026
  32. Felix, Rocio; Peres, Marco; Magalhaes, Sergio; Correia, Maria Rosario; Lourenco, Armando; Monteiro, Teresa; Garcia, Rafael; Morales, Francisco M.. "The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering". Journal of Nanomaterials (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000366431400001&KeyUID=WOS:000366431400001.
    10.1155/2015/970545
  33. Barradas, N. P.; Catarino, N.; Mateus, R.; Magalhães, S.; Alves, E.; Siketic, Z.; Radovic, I. Bogdanovic. "Determination of the 9Be(3He,pi)11B (i=0,1,2,3) cross section at 135° in the energy range 1–2.5MeV". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 346 Supplement (2015): 21-25. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000350083800004&KeyUID=WOS:000350083800004.
    10.1016/j.nimb.2015.01.037
  34. Redondo-Cubero, A.; Lorenz, K.; Wendler, E.; Magalhaes, S.; Alves, E.; Carvalho, D.; Ben, T.; et al. "Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing". Nanotechnology 26 42 (2015): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000363433800015&KeyUID=WOS:000363433800015.
    10.1088/0957-4484/26/42/425703
  35. Magalhaes, S.; Watson, I. M.; Pereira, S.; Franco, N.; Tan, L. T.; Martin, R. W.; O'Donnell, K. P.; et al. "Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents". Journal of Physics D-Applied Physics 48 1 (2014): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000347979700006&KeyUID=WOS:000347979700006.
    10.1088/0022-3727/48/1/015103
  36. Fialho, M.; Lorenz, K.; Magalhaes, S.; Rodrigues, J.; Santos, N. F.; Monteiro, T.; Alves, E.. "Lattice site location and luminescence studies of AlxGa1-xN alloys doped with thulium ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 307 (2013): 495-498. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000321722200110&KeyUID=WOS:000321722200110.
    10.1016/j.nimb.2013.01.010
  37. Magalhaes, S.; Barradas, N. P.; Alves, E.; Watson, I. M.; Lorenz, K.. "High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 273 (2012): 105-108. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000300471000030&KeyUID=WOS:000300471000030.
    10.1016/j.nimb.2011.07.051
  38. Peres, M.; Magalhaes, S.; Rodrigues, J.; Soares, M. J.; Fellmann, V.; Neves, A. J.; Alves, E.; et al. "The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD". Optical Materials 33 7 (2011): 1045-1049. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000291240200018&KeyUID=WOS:000291240200018.
    10.1016/j.optmat.2010.10.025
  39. Peres, Marco; Magalhaes, Sergio; Fellmann, Vincent; Daudin, Bruno; Neves, Armando Jose; Alves, Eduardo; Lorenz, Katharina; Monteiro, Teresa. "Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination". Nanoscale Research Letters 6 (2011): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000292292500003&KeyUID=WOS:000292292500003.
    10.1186/1556-276X-6-378
  40. Lorenz, K; Alves, E; Magalhães, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, M E G. "Defect studies and optical activation of Yb doped GaN". Journal of Physics: Conference Series 249 (2010): 012053. http://dx.doi.org/10.1088/1742-6596/249/1/012053.
    10.1088/1742-6596/249/1/012053
  41. Peres, M.; Neves, A. J.; Monteiro, T.; Magalhaes, S.; Franco, N.; Lorenz, K.; Alves, E.; et al. "Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice". Journal of Nanoscience and Nanotechnology 10 4 (2010): 2473-2478. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000273984900029&KeyUID=WOS:000273984900029.
    10.1166/jnn.2010.1430
  42. Peres, M.; Neves, A. J.; Monteiro, T.; Magalhaes, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; et al. "Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots". Physica Status Solidi B-Basic Solid State Physics 247 7 (2010): 1675-1678. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000280263700018&KeyUID=WOS:000280263700018.
    10.1002/pssb.200983674
  43. Das, A.; Magalhaes, S.; Kotsar, Y.; Kandaswamy, P. K.; Gayral, B.; Lorenz, K.; Alves, E.; Ruterana, P.; Monroy, E.. "Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers". Applied Physics Letters 96 18 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000277422000018&KeyUID=WOS:000277422000018.
    10.1063/1.3427310
  44. Lorenz, K.; Magalhaes, S.; Alves, E.; Peres, M.; Monteiro, T.; Neves, A. J.; Bockowski, M.. "High temperature annealing of Europium implanted AlN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 268 19 (2010): 2907-2910. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282301100013&KeyUID=WOS:000282301100013.
    10.1016/j.nimb.2010.05.003
  45. Magalhaes, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A. J.; Alves, E.; Monteiro, T.; Lorenz, K.. "Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation". Journal of Applied Physics 108 8 (2010): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000283745100121&KeyUID=WOS:000283745100121.
    10.1063/1.3496624
  46. Magalhaes, S.; Lorenz, K.; Franco, N.; Barradas, N. P.; Alves, E.; Monteiro, T.; Amstatt, B.; Fellmann, V.; Daudin, B.. "Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures". Surface and Interface Analysis 42 10-11 (2010): 1552-1555. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000282668800009&KeyUID=WOS:000282668800009.
    10.1002/sia.3614
  47. Lorenz, K.; Magalhaes, S.; Franco, N.; Barradas, N. P.; Darakchieva, V.; Alves, E.; Pereira, S.; et al. "Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties". Physica Status Solidi B-Basic Solid State Physics 247 7 (2010): 1740-1746. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000280263700035&KeyUID=WOS:000280263700035.
    10.1002/pssb.200983656
  48. Casaca, A.; Borges, R. P.; Ferreira, P.; Saraiva, A.; Rosa, M. A.; da Silva, R. C.; Nunes, W. C.; Magalhaes, S.; Godinho, M.. "Strain and interface effects on the magnetic and transport properties of La(0.7)Ca(0.3)MnO(3)/CaO multilayers". International Conference on Superconductivity and Magnetism (Icsm) 153 (2009): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000298993000045&KeyUID=WOS:000298993000045.
    10.1088/1742-6596/153/1/012045
  49. Borges, R. P.; Ferreira, P.; Saraiva, A.; Goncalves, R.; Rosa, M. A.; Goncalves, A. P.; da Silva, R. C.; et al. "Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films". Physica B-Condensed Matter 404 8-11 (2009): 1398-1403. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000265886100068&KeyUID=WOS:000265886100068.
    10.1016/j.physb.2008.12.031
  50. Peres, M.; Magalhaes, S.; Franco, N.; Soares, M. J.; Neves, A. J.; Alves, E.; Lorenz, K.; Monteiro, T.. "Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0 <= x <= 1) alloys". Microelectronics Journal 40 2 (2009): 377-380. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000263695100053&KeyUID=WOS:000263695100053.
    10.1016/j.mejo.2008.07.032
  51. Leitao, J. P.; Santos, N. M.; Sobolev, N. A.; Correia, M. R.; Stepina, N. P.; Carmo, M. C.; Magalhaes, S.; et al. "Radiation hardness of GeSi heterostructures with thin Ge layers". Materials Science and Engineering B-Solid State Materials For Advanced Technology 147 2-3 (2008): 191-194. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000253798300020&KeyUID=WOS:000253798300020.
    10.1016/j.mseb.2007.08.032
  52. Alves, E.; Magalhaes, S.; Barradas, N. P.; Baidus, N. V.; Vasilevskiy, M. I.; Zvonkov, B. N.. "Ion beam studies of InAs/GaAs self assembled quantum dots". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 266 8 (2008): 1439-1442. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000256677600061&KeyUID=WOS:000256677600061.
    10.1016/j.nimb.2007.12.078
  53. Leitao, J. P.; Sobolev, N. A.; Correia, M. R.; Carmo, M. C.; Stepina, N.; Yakimov, A.; Nikiforov, A.; Magalhaes, S.; Alves, E.. "Electronic properties of Ge islands embedded in multilayer and superlattice structures". Thin Solid Films 517 1 (2008): 303-305. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000261510700087&KeyUID=WOS:000261510700087.
    10.1016/j.tsf.2008.08.080
  54. Borges, R. P.; Da Silva, R. C.; Magalhaes, S.; Cruz, M. M.; Godinho, M.. "Magnetism in ar-implanted ZnO". Journal of Physics-Condensed Matter 19 47 (2007): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000250711200010&KeyUID=WOS:000250711200010.
    10.1088/0953-8984/19/47/476207
  55. Magalhaes, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E.. "Implantation of nanoporous GaN with eu ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 257 (2007): 328-331. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000246165500075&KeyUID=WOS:000246165500075.
    10.1016/j.nimb.2007.01.027
  56. Magalhaes, S.; Fonseca, A.; Franco, N.; Barradas, N. P.; Sobolev, N.; Hey, R.; Grahn, H.; Alves, E.. "Damage behaviour of GaAs/AlAs multilayer structures". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 249 (2006): 890-893. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000239545000215&KeyUID=WOS:000239545000215.
    10.1016/j.nimb.2006.03.157
Capítulo de livro
  1. Nunes, Bruno; Magalhaes, Sergio; Franco, Nuno; Alves, Eduardo; Serro, Ana Paula; Colaco, Rogerio. "Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation". 257-+. 2013.
    10.4028/www.scientific.net/MSF.730-732.257
  2. Peres, M.; Magalhaes, S.; Soares, M. R.; Soares, M. J.; Rino, L.; Alves, E.; Lorenz, K.; et al. "Disorder induced violet/blue luminescence in rf-deposited ZnO films". 662-666. 2013.
    10.1002/pssc.201200873
  3. Fialho, M.; Lorenz, K.; Magalhaes, S.; Redondo-Cubero, A.; Rodrigues, J.; Santos, N. F.; Monteiro, T.; Alves, E.. "Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions". 63-66. 2012.
    10.1063/1.4766490
  4. Lorenz, K.; Peres, M.; Franco, N.; Marques, J. G.; Miranda, S. M. C.; Magalhaes, S.; Monteiro, T.; et al. "Radiation damage formation and annealing in GaN and ZnO". 2011.
    10.1117/12.879402
  5. Magalhaes, S.; Sobolev, N. A.; Abrosimov, N. V.; Alves, E.. "Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions". 298-+. 2008.
    10.4028/www.scientific.net/MSF.587-588.298
Livro
  1. Fialho, M.; Magalhães, Sérgio; Alves, Luís; Marques, Carlos; Maalej, R.; Monteiro, T.; Lorenz, Katharina; Alves, E.. AIN content influence on the properties of Al. 2018.
  2. Nunes, Bruno; Magalhães, Sérgio; Franco, Nuno; Alves, E.; Colaço, Rogerio. Microstructure and nanomechanical properties of Fe+ implanted silicon. 2013.
    10.1016/j.apsusc.2013.07.129
  3. Fialho, Maria; Magalhães, Sérgio; Alves, Luís; Marques, Carlos; Maalej, Ramzi; Monteiro, T.; Lorenz, Katharina; Alves, E.. AIN content influence on the properties of AlxGa1-xN doped with Pr ions. 2012.
    10.1016/j.nimb.2011.07.062
Poster em conferência
  1. Magalhães Esteves, Duarte ; Cardoso Pedro, Miguel; Pereira, Daniela R.; Magalhães, Sérgio; Rodrigues, Ana Luísa; Cerqueira, Luís; Luís F. Santos ; et al. Autor correspondente: Magalhães Esteves, Duarte. "Ion-implanted ß-Ga2O3: from nanomembrane fabrication to photonic applications". Trabalho apresentado em Local Photonics Meetup 2023, 2023.
  2. Magalhães Esteves, Duarte ; Pedro, M. C.; Pereira, Daniela R.; Magalhães, Sérgio; Alves, LC; Luís F. Santos ; Lorenz, Katharina; Peres, Marco. Autor correspondente: Magalhães Esteves, Duarte. "A novel approach for ß-Ga2O3 nanomembrane fabrication using ion implantation". Trabalho apresentado em 21st International Conference of Radiation Effects in Insulators, 2023.
Recurso online
  1. MROX website. 2021. http://www.mrox.eu.
  2. Layer de-Convolution Williamson-Hall novel method software. 2021. https://www.mrox.eu.
  3. Several software for ion beam analysis. 2021. https://www.mrox.eu.
Tese / Dissertação
  1. Magalhães, Sérgio Nuno Canteiro de. "Caracterização e modificação de heteroestruturas de nitretos do grupo III". Doutoramento, 2013. http://hdl.handle.net/10773/10631.
Atividades

Apresentação oral de trabalho

Título da apresentação Nome do evento
Anfitrião (Local do evento)
2022/07/11 Modeling the strain build-up in nitrogen implanted tungsten films on silicon substrates 22nd International Conference of Ion Beam Modification of Materials (IBMM)
Conference of Ion Beam Modification of Materials (IBMM) (Lisbon, Portugal)
2022/06/04 Combining X-ray real and reciprocal space mapping techniques to explore the epitaxial growth of nitrides, oxides and tin compounds WOCSDICE EXMATEC 2022 3-6 May Ponta Delgada, Azores, Portugal
WOCSDICE EXMATEC (Ponta Delgada, Portugal)
2018/09/18 Comparison of strain induced by ion implantation of GaN with different orientations E-MRS 2018 Fall Meeting Warsow
E-MRS (Varsóvia, Polónia)
2016/06/10 Challenging challenges to Vegard’s rule for Al1-xInxN thin films grown on GaN templates WOCSDICE (40th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe) Dia 10 de Junho às 10:00 com a referência 74.
Universidade de Aveiro (Aveiro, Portugal)
2015/06/23 Evidence of bimodal defect distribution by X-ray diffraction in Tm implanted Al0.15Ga0.85N Conferência Materiais (VII International Materials Symposium, XVII Conference of Sociedade Portuguesa de Materiais) Sessão D: 9:30, auditório principal com a referência 323.
Sociedade Portuguesa de Materiais (Porto, Portugal)
2010/09/02 Structural and morphological comparison of AlInN thin films grown on GaN and AlGaN buffer layers 17ª Conferência Nacional da Física, 20º Encontro Ibérico para o ensino da Física
Universidade de Trás-Os-Montes (Vila Real, Portugal)
2010/01/15 Structural and compositional analysis of near-lattice-matched Al1-xInxN/ GaN 2nd MAP-Fis PhD research conference, Universidade de Aveiro
Universidade de Aveiro (Aveiro, Portugal)
2009/06/08 Structural and compositional analysis of near-lattice-matched Al1-xInxN/ GaN Summer Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium J: Wide band gap semiconductor nanostructures for optoelectronic applications, June 8 - 12 (2009).
European Research Materials (Estrasburgo, França)
2009/04/05 Structural and compositional analysis of near-lattice-matched Al1-xInxN/GaN Recent advances in Characterization, Processing, Design and Modeling of Structural and Functional Materials, Sociedade Portuguesa de Materiais. Materiais 2009, Instituto Superior Técnico, Lisboa, Portugal
Instituto Superior Técnico (Lisboa, Portugal)
2008/10/06 Investigation of Al0.85In0.15N epilayers as a function of growth thickness International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, October 6-10, 2008. "Investigation of Al0.85In0.15N epilayers as a function of growth thickness
International Workshop on Nitride semiconductors (IWN2008) (Montreaux, Suiça)
2008/04/02 RBS/Channelling analysis of strain in GaN quantum dots and quantum wells Spring Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium G: Wide band gap semiconductor nanostructures for optoelectronic applications, May 26 - 30 (2008)
E-MRS (Estrasburgo, França)
2008/03/01 Structural study of semiconductor quantum dots Workshop on New Trends and Applications of Ion Beams, Instituto Tecnológico e Nuclear, Sacavém, Portugal, April 1 – 3 (2008).
Instituto Tecnológico e Nuclear (Sacavém, Portugal)
2007/04/02 Effect of annealing on AlN/GaN quantum dot heterostructures Global Materials fot the XXI century: Challanges to Academia and Industry. XIII Conference of Sociedade Portuguesa de Materiais . IV International Materials Symposium - A Materials Science Forum Faculdade de Engenharia da Universidade do Porto, Porto, Portugal, April 1 - 4 (2007).
International Materials Symposium (Porto, Portugal)

Orientação

Título / Tema
Papel desempenhado 		Curso (Tipo)
Instituição / Organização
2022/01/01 - Atual Development of new strategies for the fitting of X-ray diffraction patterns using machine learning techniques
Orientador
 Informatics Engineering (Mestrado)
Universidade de Lisboa, Portugal
2019/03/01 - 2019/10/01 Effect of Ar implantation Energy and Angle on the reflection pattern of nitrides
Orientador
 Física (Mestrado)
Universidade do Porto, Portugal
2018/03/01 - 2018/09/15 Measuring strain caused by ion implantation in GaN
Orientador
 Engenharia Física Tecnológica (Mestrado)
Instituto de Plasmas e Fusão Nuclear, Portugal

Organização de evento

Nome do evento
Tipo de evento (Tipo de participação) 		Instituição / Organização
2022/10/28 - Atual Ion beam analysis of Li-Sn alloys R. Mateus (2022/10/28)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/09/29 - Atual New RBS line A. Ribeiro (Ph. D. student) (2022/09/29)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/07/28 - Atual Defect and strain profiles caused by ion implantation in GaN A. Caçador (Ph. D. student) (2022/07/28)
Seminário
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/06/28 - Atual Artificial neural networks and ion beams for 3D imaging V. Corregidor (2022/06/28)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/05/26 - Atual The impact of proton radiation on the electrical and optical properties of core-shell p-n junction GaN microwires D. Verheij (Ph. D. student) (2022/05/26)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/04/28 - Atual Tools for ion beam analysis R. Silva (2022/04/28)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/03/31 - Atual Underground Nuclear Astrophysics at LNGS: The LUNA-MV project and 14N(p, ¿) 15O reaction measurement A. Compagnucci, Gran Sasso Science Institute and INFN, Laboratori Nazionali del Gran Sasso (2022/03/21)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/02/24 - Atual Cr-doped ¿-Ga2O3 for radiation detection D. Esteves (2022/02/24)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2022/01/27 - Atual High entropy alloys for nuclear reactors (2022/01/27)
Seminário (Membro da Comissão Organizadora)
 Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021/09/01 - Atual SM became member of NIn Tec (in September 2021), an acronym for Group of Researchers from IST in English or Núcleo de Investigadores do IST in Portuguese. NIn Tec is an association without profit goals whose elements are Researchers and other workers from IST. It vises to foment the discussion and promotion of Scientific Research in its several domains. The missions of the association consist in dignifying and promoting the exercise of Scientific Research; stimulating the intellectual coexistence and professional solidarity among researchers. (2021/09/01)
Outro (Membro da Comissão Organizadora)
 Associação para o Desenvolvimento do Instituto Superior Técnico, Portugal

Participação em evento

Descrição da atividade
Tipo de evento 		Nome do evento
Instituição / Organização
2010/09/20 - 2010/09/24 POSTER: 11th European Vacuum Conference, EVC-11, 8th Iberian Vacuum Meeting, IVM-8, 6th European Topical Conference on Hard Coatings, Salamanca, Spain, September 20 – 24, 2010 "Compositional analysis of Al1-xInxN epitaxial layers ”
Conferência
 European Vacuum Conference, EVC-11, 8th Iberian Vacuum Meeting, IVM-8, 6th European Topical Conference on Hard Coatings, Salamanca, Spain, September 20 – 24, 2010
2010/06/06 - 2010/06/11 POSTER: Spring Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, June 6 – 11, 2010, Symposium K: Rare earth doped materials for optical based technologies "The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QDs"
Conferência
 Spring Meeting of the European Materials Research Society (E-MRS), Strasbourg
2009/12/06 - 2009/12/11 POSTER: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices ’09 Maui, Hawaii, USA December 6 – 11, 2009 "Advanced ion beam materials processing and characterization”
Conferência
 7th International Symposium on Atomic Level Characterizations for New Materials and Devices ’09 Maui, Hawaii, USA December 6 – 11, 2009
2009/10/18 - 2009/10/23 POSTER: ICNS-8 - 8th International Conference on Nitride Semiconductors,October 18 – 23 (2009) “Structural and optical properties of rare-earth doped [0001] GaN quantum dots." “Al1-xInxN/ GaN bilayers: structure, impurities and optical properties”
Conferência
 ICNS-8 - 8th International Conference on Nitride Semiconductors,October 18 – 23 (2009)
2009/08/30 - 2009/09/04 POSTER: Radiation effects in insulators – REI 2009,Padova, Italy (August 30 to September 4) “High temperature annealing of Europium implanted AlN“.
Conferência
 Radiation effects in insulators – REI 2009,Padova, Italy (August 30 to September 4)
2009/06/08 - 2009/06/12 POSTER: Summer Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium J: Wide band gap semiconductor nanostructures for optoelectronic applications, June 8 - 12 (2009). "Europium implanted GaN quantum dots (QD)”
Conferência
 Summer Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium J: Wide band gap semiconductor nanostructures for optoelectronic applications, June 8 - 12 (2009).
2009/04/05 - 2009/04/08 POSTER: Recent advances in Characterization, Processing, Design and Modelling of Structural and Functional Materials, Sociedade Portuguesa de Materiais. Materiais 2009, Instituto Superior Técnico, Lisboa, Portugal, April 5 - 8 (2009) “Structural and compositional analysis of near-lattice-matched Al1-xInxN/GaN (0.08 “Comparison of structural properties of Al1-xInxN films grown on Al1-yGayN templates with different AlN contents”.
Conferência
 Recent advances in Characterization, Processing, Design and Modelling of Structural and Functional Materials, Sociedade Portuguesa de Materiais. Materiais 2009, Instituto Superior Técnico, Lisboa, Portugal, April 5 - 8 (2009)
2008/10/06 - 2008/10/10 POSTER: International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, October 6-10, 2008. "Photoluminescence excitation spectroscopy of MOVPE-grown Al1-xInxN epilayers". "Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors".
Conferência
 International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, October 6-10, 2008.
2008/06/22 - 2008/06/25 POSTER: 2nd International Conference on Advanced Nano Materials (ANM 2008), Aveiro, Portugal June 22 -25. "Analysis of the optical and structural properties of Eu doped GaN/AlN quantum dots and quantum wells".
Conferência
 2nd International Conference on Advanced Nano Materials (ANM 2008), Aveiro, Portugal June 22 -25.
2008/05/26 - 2008/05/30 POSTER: Spring Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium G: Wide band gap semiconductor nanostructures for optoelectronic applications, May 26 - 30 (2008). "Analysis of the optical and structural properties of Eu doped GaN/AlN quantum dots and quantum wells". "Influence of the AlN molar fraction on the structural and optical properties of praseodymium doped Al(x)Ga(1-x)N alloys".
Conferência
 Spring Meeting of the European Materials Research Society (E-MRS), Strasbourg, France, Symposium G: Wide band gap semiconductor nanostructures for optoelectronic applications, May 26 - 30 (2008).
2007/04/01 - 2007/04/04 POSTER: Global Materials fot the XXI century: Challanges to Academia and Industry. XIII Conference of Sociedade Portuguesa de Materiais . IV International Materials Symposium - A Materials Science ForumFaculdade de Engenharia da Universidade do Porto, Porto, Portugal, April 1 - 4 (2007). "Study of SiGe alloys with different germanium concentrations implanted with Mn and As ions".
Congresso
 Global Materials fot the XXI century: Challanges to Academia and Industry. XIII Conference of Sociedade Portuguesa de Materiais . IV International Materials Symposium - A Materials Science ForumFaculdade de Engenharia da Universidade do Porto, Porto, Portugal, April 1 - 4 (2007).
2006/09/18 - 2006/09/22 POSTER: XV International Conference Ion Beam Modification of Materials, San Domenico Palace Hotel, Taormina, Italy, September 18-22 (2006). "Epitaxial lateral overgrown GaN implanted with Eu ions".
Conferência
 XV International Conference Ion Beam Modification of Materials, San Domenico Palace Hotel, Taormina, Italy, September 18-22 (2006).
2005/09/18 - 2005/09/21 POSTER: RIVA - 5th Iberian Vacuum Meeting, University of Minho - Portugal, September 18 - 21 (2005). ”Advanced characterization of nanostructured materials for electronic and optoelectronic applications by high resolution X-ray diffraction.”.
Conferência
 RIVA - 5th Iberian Vacuum Meeting, University of Minho - Portugal, September 18 - 21 (2005).
2005/06/26 - 2005/07/01 POSTER: 17th International Conference on Ion Beam Analysis, Sevilla, Spain, June 26 - July 1 (2005). "Damage behavior of GaAs/AlAs multilayer structures".
Conferência
 17th International Conference on Ion Beam Analysis, Sevilla, Spain, June 26 - July 1 (2005).

Arbitragem científica em conferência

Nome da conferência Local da conferência
2022/07/10 - 2022/07/15 22nd International Conference of Ion Beam Modification of Materials (IBMM) International Conference of Ion Beam Modification of Materials (IBMM)
2022/06/03 - 2022/06/06 WOCSDICE EXMATEC 2022 3-6 May Ponta Delgada, Azores, Portugal WOCSDICE EXMATEC 2022

Arbitragem científica em revista

Nome da revista (ISSN) Editora
2020/02/08 - 2020/02/14 Journal of Applied Crystallography (1600-5767) International Union of Crystallography

Curso / Disciplina lecionado

Disciplina Curso (Tipo) Instituição / Organização
2022/11/01 - 2023/02/15 Electromagnetism and Optics, 2º quarter 2022/2023 Electromagnetism and Optics (Licenciatura) Associação para o Desenvolvimento do Instituto Superior Técnico, Portugal

Membro de associação

Nome da associação Tipo de participação
2021/04/01 - Atual MDPI Materials Journal Topics Editor

Revisão ad hoc de artigos em revista

Nome da revista (ISSN) Editora
2023/03/30 - Atual Crystals
2023/02/02 - Atual Crystals
2022/12/22 - Atual Materials
2022/11/21 - Atual Materials
2022/10/18 - Atual Applied Materials Today
2022/10/17 - Atual Membranes
2022/09/21 - Atual Applied Sciences
2022/09/21 - Atual Applied Sciences
2022/09/12 - Atual Nanomaterials
2022/09/05 - Atual Nanomaterials
2022/09/05 - Atual Nanomaterials
2022/07/07 - Atual Micromachines
2021/11/07 - Atual Optical Materials
2021/10/18 - Atual Surface and Interface Analysis
2021/10/18 - Atual Applied Physics Letters
2021/10/18 - Atual Journal of Applied Crystallography
2021/09/30 - Atual Materials Today Communications

Tutoria

Tópico Nome do aluno
2022/01/03 - Atual X-ray diffraction Ricardo Martins, Ph. D. student at IST
2022/01/03 - Atual X-ray diffraction Duarte Esteves: Ph.D student at IST supervised by Profª. K. Lorenz and Dr. M. Peres (2022)
2019/01/03 - Atual X-ray diffraction Daniela Rodrigues Pereira, Instituto Superior Técnico, Ph. D. student of Profª. K. Lorenz (2019-2022
2022/01/03 - 2022/12/31 Rutherford backscattering spectrometry João Pedro Freitas, Master Degree student at FCUP-IFIMUP
2022/02/05 - 2022/11/14 X-ray reflectivity Pedro Araújo: Ph.D student at INESC-MN (2022)
2021/01/03 - 2022/11/05 X-ray diffraction Afonso Filipe Cortes Caçador, IST student, Master degree provisory title: Defects and strain profile
2022/02/03 - 2022/10/25 X-ray diffraction Tiago Fernandes: Master degree student at INESC-MN supervised by Profª. K. Lorenz (2022)
2020/01/03 - 2021/12/19 X-ray diffraction Bogdan Postolnyi: External collaborator at FCUP-IFIMUP (2020-2022)
2018/01/03 - 2021/01/02 Rutherford backscattering spectrometry and X-ray diffraction Paula Quitério: Researcher at FCUP-IFIMUP (Multifunctional magnetic materials and nanostructures)
2020/01/03 - 2020/12/30 Rutherford backscattering spectrometry Maxime Drolet, L’école Polytech, Lyon, France, Master degree on Materials and Engeneering of Surface
2015/01/03 - 2020/01/03 X-ray diffraction, Rutherford backscattering spectrometry Marco Peres: Ph. D. in Physical Engineering from the Universidade de Aveiro (Portugal), 2015.
2019/01/03 - 2019/12/30 Rutherford backscattering spectrometry Francisco José Neto Antão, Instituto Superior Técnico, Master degree on Materials Science and Eng.
2016/01/03 - 2019/12/30 X-ray diffraction and Rutherford backscattering spectrometry Djibril Nd Faye: Researcher at University of Braga (assistance from 2016 to 2019)
2014/01/03 - 2019/12/30 X-ray diffraction and Rutherford backscattering spectrometry M. Fialho: Ph. D student at IST between 2014 and 2019
2015/01/03 - 2018/05/04 X-ray diffraction and Rutherford backscattering spectrometry Norberto Catarino: Ph. D. in Physics from the Instituto Superior Técnico da Universidade de Lisboa