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Ana Maria Branquinho de Amaral. Concluiu o Doutoramento em Ciências dos Materiais em 1992 pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia, a Licenciatura em Física em 1976 pela Universidade de Lisboa, Faculdade de Ciências, o Doctorat em Energetique em 1983 pelo Institut de Mathématiques de Jussieu, Paris, Rive Gauche e o Diplôme d´Etudes Approfondies, DEA, em Physique de l'Énergie em 1980 pelo Institut de Mathématiques de Jussieu, Paris, Rive Gauche. É Professora Auxiliar na Universidade de Lisboa, Instituto Superior Técnico e Dirigente na Universidade de Lisboa, Centro de Fisíca e Engenharia de Materiais Avançados do Laboratório de Materiais Semicondutores e Conversão de Energia, LMSCE. Publicou 51 artigos em revistas especializadas. Possui 5 livro(s). Orientou 2 dissertações de mestrado e coorientou 1. Participou como Investigadora em 3 projetos e Investigadora Responsável em 4 projetos. No seu currículo Ciência Vitae os termos mais frequentes na contextualização da produção científica e tecnológica são: Nanostructured gold film; Indium oxide; Reactive thermal evaporation; thin films; transparent conductor; Materials Science; semicondoctor; CMOS; óxidos metálicos tipo p; Processamento de semicondutores; Tecnologia C-MOS; Heterojunções a-Si/c-Si; Células solares.
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Identification

Personal identification

Full name
Ana Maria Branquinho de Amaral

Citation names

  • Amaral, Ana
  • A. Amaral

Author identifiers

Ciência ID
1315-E813-A6E9
ORCID iD
0000-0001-8837-7547

Addresses

  • Instituto Superior Técnico, Av. Rovisco Pais, 1049-001, Lisboa, Lisboa, Portugal (Professional)

Knowledge fields

  • Engineering and Technology - Nano-technology - Nano-materials

Languages

Language Speaking Reading Writing Listening Peer-review
English Intermediate (B1) Intermediate (B1) Intermediate (B1) Intermediate (B1) Intermediate (B1)
French Advanced (C1) Advanced (C1) Advanced (C1) Advanced (C1)
Spanish; Castilian Beginner (A1) Intermediate (B1) Beginner (A1) Beginner (A1)
Education
Degree Classification
1992
Concluded
 Ciências dos Materiais (Doutoramento)
Major in Especialidade: Materiais Semicondutores
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
"Centros Profundos do Silício Amorfo Hidrogenado: Análise por Medidas de Admitância de Díodos Schottky" (THESIS/DISSERTATION)
1983
Concluded
 Energetique (Doctorat)
Institut de mathématiques de Jussieu Paris Rive Gauche, France
"Silicium amorphe hydrogené preparé par pulverisation cathodique: contribution a l´étude des propretés de transport à partir de l´analyse de la réponse dynamique en petits signaux de structures Schotky" (THESIS/DISSERTATION)
 Très Honorable
1980
Concluded
 Physique de l'Énergie (DEA)
Institut de mathématiques de Jussieu Paris Rive Gauche, France
"Caractérisation électrique des diodes Schottky réalisées sur silicium amorphe hydrogéné" (THESIS/DISSERTATION)
 Trés bien
1976
Concluded
 Física (Licenciatura)
Universidade de Lisboa Faculdade de Ciências, Portugal
"Estudo de estruturas macromoleculares de natureza lipídica conhecida - liposomas, como modelos de membrana celular - inclusão de albumina nesta estrutura" (THESIS/DISSERTATION)
 catorze
Affiliation

Teaching in Higher Education

Category
Host institution 		Employer
2015 - Current Assistant Professor (University Teacher) Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade de Lisboa Instituto Superior Técnico, Portugal
1991 - 2015 Assistant Professor (University Teacher) Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade de Lisboa Instituto Superior Técnico, Portugal
1980 - 1991 Assistant (University Teacher) Universidade de Lisboa Instituto Superior Técnico, Portugal
1978 - 1980 Trainee Assistant (University Teacher) Universidade de Lisboa Instituto Superior Técnico, Portugal
1977 - 1978 Trainee Assistant (University Teacher) Universidade Nova de Lisboa Faculdade de Ciências Médicas, Portugal

Positions / Appointments

Category
Host institution 		Employer
2014 - Current Manager of Laboratory, Institute, Museum, Centre or Observatory Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade de Lisboa Instituto Superior Técnico Centro de Física e Engenharia de Materiais Avançados (CeFEMA) Laboratório de Materiais Semicondutores e Conversão de Energia (LMSCE), Portugal
1995 - 2014 Manager of Laboratory, Institute, Museum, Centre or Observatory Universidade de Lisboa Instituto Superior Técnico, Portugal
Universidade Técnica de Lisboa Instituto de Ciência e Engenharia de Materiais e Superfícies (ICEMS) Laboratório de Materiais Semicondutores e Conversão de Energia (LMSCE), Portugal
Projects

Contract

Designation Funders
2011/04/01 - 2014/03/31 Novos materiais funcionais obtidos a partir de micro e nano fibras celulósicas
PTDC/FIS/110132/2009
Researcher
Universidade Nova de Lisboa Centro de Investigação em Materiais, Portugal

Instituto Politécnico de Lisboa Instituto Superior de Engenharia de Lisboa, Portugal

Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal

Universidade de Lisboa Instituto Superior Técnico, Portugal
Fundação para a Ciência e a Tecnologia
Concluded
2010/03/01 - 2013/11/30 Junções de silício de baixo custo (LoCoSil)
PTDC/EEA-ELC/108882/2008
Principal investigator
Universidade de Lisboa Instituto Superior Técnico, Portugal
 Fundação para a Ciência e a Tecnologia
Concluded
2007/12/01 - 2011/10/31 Circuitos CMOS transparentes em películas finas
PTDC/EEA-ELC/74334/2006
Principal investigator
Universidade de Lisboa Instituto Superior Técnico, Portugal
 Fundação para a Ciência e a Tecnologia
Concluded
1996 - 2000 Aplicação, desenvolvimento e exploração de um feixe de positrões
3/3.1/MMA/1778/95
Researcher
Concluded
1995 - 1999 Novos materiais para a construção de janelas de transmitância variável a partir de derivados celulósicos
POCTI/CTM/2620/95
Researcher
Concluded
1993 - 1996 Caracterização do silício amorfo dopado e não dopado
PBIC/C/CTM/1416/92
Principal investigator
Fundação para a Ciência e a Tecnologia, Portugal
Concluded
1990 - 1992 Caractérisation du Silicium Amorphe Hydrogené, Dopé et non Dopé
Projecto de Cooperação Luso-Francês
Principal investigator
Instituto de Cooperação Científica e Tecnológica Internacional, Embaixada de França, Portugal
Concluded
Outputs

Publications

Book
  1. Lavareda, G.; De Carvalho, C.N.; Amaral, A.; Fortunato, E.. Improvement of field-effect mobilities in TFTs: Surface plasma treatments vs stack dielectric structures. 2004.
  2. Gordo, P.M.; Naia, M.D.; Gil, C.L.; De Lima, A.P.; Lavareda, G.; De Carvalho, C.N.; Amaral, A.; Kajcsos, Zs.. Positron annihilation studies in amorphous silicon nitride. 2004.
  3. Pereira, P.; Lavareda, G.; Do Rego, A.M.B.; Amaral, A.; De Carvalho, C.N.. Optimisation of a home-made RIE system - Effect of SF6 plasma on the properties of partially etched a-Si:H films. 2004.
  4. Nunes de Carvalho, C.; Luís, A.; Lavareda, G.; Amaral, A.. Influence of different unheated substrates on the properties of ITO thin films deposited by rf-PERTE. 2002.
  5. Gordo, P.M.; Subrahmanyam, V.S.; Duarte Naia, M.; Lopes Gil, C.; De Lima, A.P.; Lavareda, G.; Nunes De Carvalho, C.; Amaral, A.. Role of the RF power on the structure of defects in a-Si:H films produced by PECVD. 2001.
    Published
Conference paper
  1. Vygranenko, Yuri K.; Lavareda, Guilherme; André, Vânia; Brogueira, Pedro; Amaral, Ana; Fernandes, Miguel; Fantoni, Alessandro; Vieira, Manuela. "An indium-oxide electrode with discontinuous Au layers for plasmonic devices". 2020.
    Published • 10.1117/12.2545958
  2. Amaral, Ana; Lavareda, G.; Carvalho, C. Nunes de; André, V.; Vygranenko, Yuri; Fernandes, M.; Brogueira, Pedro; et al. "Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions". Paper presented in 2018 MRS Fall Meeting, Boston, 2018.
    Published • https://doi.org/10.1557/adv.2018.113
  3. Amaral, A.; Lavareda, G.; Nunes De Carvalho, C.; André, V.; Vygranenko, Y.; Fernandes, M.; Brogueira, P.. "Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions". 2018.
    10.1557/adv.2018.113
  4. A. Amaral. "Low Temperature Deposition of Conducting Indium Oxide Films for Solar Cell Applications". Paper presented in 33rd European Photovoltaic Solar Energy Conference and Exhibition, Amesterdão, 2017.
    Published • 10.4229/EUPVSEC20172017-1CV.3.76
  5. Fernandes, M.; Vygranenko, Y.; Vieira, M.; Lavareda, G.; Carvalho, C.N.D.; Amaral, A.. "Automated rf-PERTE System for Room Temperature Deposition of TCO Coatings". 2016.
    10.1016/j.egypro.2016.11.323
  6. Amaral, A.; De Carvalho, C.N.; Brogueira, P.; Melo, L.V.; Lavareda, G.; Godinho, M.H.. "Transport properties of indium tin oxide on anisotropic flexible transparent cellulosic substrates". Paper presented in MRS Spring Meeting, São Francisco, 2002.
    Published
  7. Amaral, A.; Lavareda, G.; Nunes de Carvalho, C.; Brogueira, P.; Gordo, P.M.; Subrahmanyam, V.S.; Lopes Gil, C.; Duarte Naia, M.; De Lima, A.P.. "Study of defects in hydrogenated amorphous silicon by constant photocurrent method and positron annihilation". Paper presented in MRS Spring Meeting, 2001.
    Published
  8. Vygranenko, Yu.; Fernandes, M.; Carvalho, C.N.; Lavareda, G.; Louro, P.; Amaral, A.; Schwarz, R.; Vieira, M.. "Carrier transport and photogeneration in amorphous silicon crystalline silicon heterojunctions with i/n and p/n interfaces". 2000.
Journal article
  1. Lavareda, G.; Vygranenko, Y.; Amaral, A.; Brogueira, P.. "Effect of dehydrogenation on optical constants of silicon nitride thin films". Optical Materials 145 (2023): http://www.scopus.com/inward/record.url?eid=2-s2.0-85174194521&partnerID=MN8TOARS.
    10.1016/j.optmat.2023.114480
  2. Vygranenko, Y.; Fernandes, M.; Vieira, M.; Lavareda, G.; Nunes de Carvalho, C.; Brogueira, P.; Amaral, A.; Barradas, N.P.; Alves, E.. "Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films". Materials Science in Semiconductor Processing 121 (2021): http://www.scopus.com/inward/record.url?eid=2-s2.0-85089411916&partnerID=MN8TOARS.
    10.1016/j.mssp.2020.105349
  3. Lavareda, G.; Vygranenko, Y.; Amaral, A.; Nunes de Carvalho, C.; Barradas, N.P.; Alves, E.; Brogueira, P.. "Dependence of optical properties on composition of silicon carbonitride thin films deposited at low temperature by PECVD". Journal of Non-Crystalline Solids 551 (2021): http://www.scopus.com/inward/record.url?eid=2-s2.0-85092396548&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2020.120434
  4. Vygranenko, Y.; Fernandes, M.; Vieira, M.; Lavareda, G.; Nunes De Carvalho, C.; Brogueira, P.; Amaral, A.. "Photoconductivity kinetics of indium sulfofluoride thin films". EPJ Applied Physics 89 1 (2020): http://www.scopus.com/inward/record.url?eid=2-s2.0-85082883361&partnerID=MN8TOARS.
    10.1051/epjap/2020190265
  5. Vygranenko, Y.; Fernandes, M.; Vieira, M.; Lavareda, G.; Nunes de Carvalho, C.; Brogueira, P.; Amaral, A.. "Conducting indium oxide films on plastic substrates by plasma enhanced reactive thermal evaporation". Thin Solid Films 691 (2019): 137604. http://dx.doi.org/10.1016/j.tsf.2019.137604.
    Published • 10.1016/j.tsf.2019.137604
  6. Vygranenko, Y.; Vieira, M.; Lavareda, G.; Nunes de Carvalho, C.; Brogueira, P.; Amaral, A.; Barradas, N.P.; Alves, E.. "Optical and photoconductive properties of indium sulfide fluoride thin films". Thin Solid Films 675 (2019): 49-52. http://dx.doi.org/10.1016/j.tsf.2018.12.019.
    10.1016/j.tsf.2018.12.019
  7. Ricardo, L.; Amaral, A.; Nunes De Carvalho, C.; Lavareda, G.. "Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing". Materials Science in Semiconductor Processing 42 (2016): 210-214. http://www.scopus.com/inward/record.url?eid=2-s2.0-84975684121&partnerID=MN8TOARS.
    Published • 10.1016/j.mssp.2015.09.006
  8. Carvalho, C.; Lavareda, G.; Amaral, A.; De Carvalho, C.N.; Paulino, N.. "A CMOS micro power switched-capacitor DC-DC step-up converter for indoor light energy harvesting applications". Analog Integrated Circuits and Signal Processing 78 2 (2014): 333-351. http://www.scopus.com/inward/record.url?eid=2-s2.0-84895060613&partnerID=MN8TOARS.
    10.1007/s10470-013-0222-8
  9. Merino, E.G.; Lavareda, G.; Brogueira, P.; Amaral, A.; Nunes De Carvalho, C.; Almeida, P.L.. "InOx thin films deposited by plasma assisted evaporation: Application in light shutters". Vacuum 107 (2014): 116-119. http://www.scopus.com/inward/record.url?eid=2-s2.0-84900326222&partnerID=MN8TOARS.
    10.1016/j.vacuum.2014.04.011
  10. Lavareda, G.; De Calheiros Velozo, A.; Nunes De Carvalho, C.; Amaral, A.. "P/n junction depth control using amorphous silicon as a low temperature dopant source". Thin Solid Films 543 (2013): 122-124. http://www.scopus.com/inward/record.url?eid=2-s2.0-84883156644&partnerID=MN8TOARS.
    10.1016/j.tsf.2013.02.043
  11. De Carvalho, C.N.; Parreira, P.; Lavareda, G.; Brogueira, P.; Amaral, A.. "P-type CuxS thin films: Integration in a thin film transistor structure". Thin Solid Films 543 (2013): 3-6. http://www.scopus.com/inward/record.url?eid=2-s2.0-84883174485&partnerID=MN8TOARS.
    10.1016/j.tsf.2013.03.141
  12. De Calheiros Velozo, A.; Lavareda, G.; Nunes De Carvalho, C.; Amaral, A.. "Thermal dehydrogenation of amorphous silicon: A time-evolution study". Thin Solid Films 543 (2013): 48-50. http://www.scopus.com/inward/record.url?eid=2-s2.0-84883139156&partnerID=MN8TOARS.
    10.1016/j.tsf.2013.03.035
  13. Parreira, P.; Torres, E.; Nunes, C.; De Carvalho, C.N.; Lavareda, G.; Amaral, A.; Brites, M.J.. "Dye-sensitized 1D anatase TiO 2 nanorods for tunable efficient photodetection in the visible range". Sensors and Actuators, B: Chemical 161 1 (2012): 901-907. http://www.scopus.com/inward/record.url?eid=2-s2.0-84856214470&partnerID=MN8TOARS.
    10.1016/j.snb.2011.11.059
  14. Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; De Carvalho, C.N.. "Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities". Thin Solid Films 526 (2012): 221-224. http://www.scopus.com/inward/record.url?eid=2-s2.0-84872148583&partnerID=MN8TOARS.
    10.1016/j.tsf.2012.11.019
  15. de Calheiros Velozo, A.; Lavareda, G.; Nunes de Carvalho, C.; Amaral, A.. "Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition". Physica Status Solidi (C) Current Topics in Solid State Physics 9 10-11 (2012): 2198-2202. http://www.scopus.com/inward/record.url?eid=2-s2.0-84867933771&partnerID=MN8TOARS.
    10.1002/pssc.201200194
  16. Lavareda, G.; De Carvalho, C.N.; Ferraria, A.M.; Botelho Do Rego, A.M.; Amaral, A.. "P-type cuox thin films by RF-plasma enhanced reactive thermal evaporation: Influence of RF-power density". Journal of Nanoscience and Nanotechnology 12 8 (2012): 6754-6757. http://www.scopus.com/inward/record.url?eid=2-s2.0-84865131644&partnerID=MN8TOARS.
    10.1166/jnn.2012.4556
  17. Parreira, P.; Lavareda, G.; Amaral, A.; Botelho Do Rego, A.M.; Conde, O.; Valente, J.; Nunes, F.; Nunes De Carvalho, C.. "Transparent p-type CuxS thin films". Journal of Alloys and Compounds 509 16 (2011): 5099-5104. http://www.scopus.com/inward/record.url?eid=2-s2.0-79953056171&partnerID=MN8TOARS.
    Published • 10.1016/j.jallcom.2011.01.174
  18. Ribeiro, C.; Brogueira, P.; Lavareda, G.; Carvalho, C.N.; Amaral, A.; Santos, L.; Morgado, J.; Scherf, U.; Bonifácio, V.D.B.. "Ultrasensitive microchip sensor based on boron-containing polyfluorene nanofilms". Biosensors and Bioelectronics 26 4 (2010): 1662-1665. http://www.scopus.com/inward/record.url?eid=2-s2.0-78649722216&partnerID=MN8TOARS.
    10.1016/j.bios.2010.08.077
  19. Parreira, P.; Lavareda, G.; Valente, J.; Nunes, F.T.; Amaral, A.; De Carvalho, C.N.. "Optoelectronic properties of transparent p-type semiconductor Cu xS thin films". Physica Status Solidi (A) Applications and Materials Science 207 7 (2010): 1652-1654. http://www.scopus.com/inward/record.url?eid=2-s2.0-77955610487&partnerID=MN8TOARS.
    Published • 10.1002/pssa.200983731
  20. Parreira, P.; Lavareda, G.; Valente, J.; Nunes, F.T.; Amaral, A.; De Carvalho, C.N.. "Undoped InO x films deposited by radio frequency plasma enhanced reactive thermal evaporation at room temperature: Importance of substrate". Journal of Nanoscience and Nanotechnology 10 4 (2010): 2701-2704. http://www.scopus.com/inward/record.url?eid=2-s2.0-77954991725&partnerID=MN8TOARS.
    10.1166/jnn.2010.1431
  21. Amaral, A.; Brogueira, P.; Lavareda, G.; De Nunes Carvalho, C.. "On the role of tin doping in InO x Thin films deposited by radio frequency-plasma enhanced reactive thermal evaporation". Journal of Nanoscience and Nanotechnology 10 4 (2010): 2713-2716. http://www.scopus.com/inward/record.url?eid=2-s2.0-77954986786&partnerID=MN8TOARS.
    Published • 10.1166/jnn.2010.1436
  22. Lavareda, G.; Parreira, P.; Valente, J.; Nunes, F.T.; Amaral, A.; De Carvalho, C.N.. "Highly transparent undoped semiconducting ZnOx thin films deposited at room temperature by rf-PERTE-Influence of rf power". Journal of Non-Crystalline Solids 356 28-30 (2010): 1392-1394. http://www.scopus.com/inward/record.url?eid=2-s2.0-77955429775&partnerID=MN8TOARS.
    Published • 10.1016/j.jnoncrysol.2010.05.056
  23. Nunes de Carvalho, C.; Lavareda, G.; Parreira, P.; Valente, J.; Amaral, A.; Botelho do Rego, A.M.. "Influence of oxygen partial pressure on the properties of undoped InOx films deposited at room temperature by rf-PERTE". Journal of Non-Crystalline Solids 354 15-16 (2008): 1643-1647. http://www.scopus.com/inward/record.url?eid=2-s2.0-39149089281&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2007.10.004
  24. Madaleno, J.C.; Pereira, L.; Lavareda, G.; Cabral, G.; Carvalho, N.; Amaral, A.; Titus, E.; Coelho, M.C.; Grácio, J.. "A MIS transistor using the nucleation surface of polycrystalline diamond". Diamond and Related Materials 17 4-5 (2008): 768-771. http://www.scopus.com/inward/record.url?eid=2-s2.0-42949088649&partnerID=MN8TOARS.
    10.1016/j.diamond.2007.10.037
  25. Parreira, P.; Valante, J.; Lavareda, G.; De Nunes Carvalho, C.; Ramos, A.R.; Alves, E.; Brogueira, P.; Amaral, A.. "Role of the oxygen partial pressure on the properties of undoped tin oxide films deposited at low temperature". Physica Status Solidi (A) Applications and Materials Science 205 8 (2008): 1957-1960. http://www.scopus.com/inward/record.url?eid=2-s2.0-54249136812&partnerID=MN8TOARS.
    10.1002/pssa.200778930
  26. Valente, J.; Lavareda, G.; Conde, O.; Parreira, P.; Amaral, A.; Nunes de Carvalho, C.. "Role of rf power on the properties of undoped SnOx films deposited by rf-PERTE at low substrate temperature". Surface and Coatings Technology 202 16 (2008): 3893-3896. http://www.scopus.com/inward/record.url?eid=2-s2.0-41849092605&partnerID=MN8TOARS.
    10.1016/j.surfcoat.2008.01.033
  27. Gordo, P.M.; Ferreira Marques, M.F.; Lopes Gil, C.; de Lima, A.P.; Lavareda, G.; Nunes de Carvalho, C.; Amaral, A.; Kajcsos, Zs.. "Positron annihilation and constant photocurrent method measurements on a-Si:H films: A comparative approach to defect identification". Radiation Physics and Chemistry 76 2 (2007): 220-223. http://www.scopus.com/inward/record.url?eid=2-s2.0-33751195513&partnerID=MN8TOARS.
    10.1016/j.radphyschem.2006.03.040
  28. Lavareda, G.; Nunes de Carvalho, C.; Fortunato, E.; Ramos, A.R.; Alves, E.; Conde, O.; Amaral, A.. "Transparent thin film transistors based on indium oxide semiconductor". Journal of Non-Crystalline Solids 352 23-25 (2006): 2311-2314. http://www.scopus.com/inward/record.url?eid=2-s2.0-33745663271&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2006.03.031
  29. Nunes de Carvalho, C.; Lavareda, G.; Amaral, A.; Conde, O.; Ramos, A.R.. "InOx semiconductor films deposited on glass substrates for transparent electronics". Journal of Non-Crystalline Solids 352 23-25 (2006): 2315-2318. http://www.scopus.com/inward/record.url?eid=2-s2.0-33746994084&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2006.01.085
  30. De Carvalho, C.N.; Lavareda, G.; Fortunato, E.; Alves, H.; Gonçalves, A.; Varela, J.; Nascimento, R.; Amaral, A.. "ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates". Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 1-3 (2005): 66-69. http://www.scopus.com/inward/record.url?eid=2-s2.0-15444366733&partnerID=MN8TOARS.
    10.1016/j.mseb.2004.12.015
  31. Amaral, A.; Nunes De Carvalho, C.; Brogueira, P.; Lavareda, G.; Melo, L.V.; Godinho, M.H.. "ITO properties on anisotropic flexible transparent cellulosic substrates under different stress conditions". Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 1-3 (2005): 183-186. http://www.scopus.com/inward/record.url?eid=2-s2.0-15344344688&partnerID=MN8TOARS.
    10.1016/j.mseb.2004.12.058
  32. Lavareda, G.; De Carvalho, C.N.; Amaral, A.; Fortunato, E.; Vilarinho, P.. "a-Si:H TFT enhancement by plasma processing of the insulating/semiconductor interface". Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109 1-3 (2004): 264-268. http://www.scopus.com/inward/record.url?eid=2-s2.0-2442476140&partnerID=MN8TOARS.
    10.1016/j.mseb.2003.10.079
  33. Lavareda, G.; Nunes De Carvalho, C.; Fortunato, E.; Amaral, A.; Ramos, A.R.. "Properties of a-Si:H TFTs using silicon carbonitride as dielectric". Journal of Non-Crystalline Solids 338-340 1 SPEC. IS (2004): 797-801. http://www.scopus.com/inward/record.url?eid=2-s2.0-2942558747&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2004.03.094
  34. De Carvalho, C.N.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.. "ITO films deposited by rf-PERTE on unheated polymer substrates - Properties dependence on In-Sn alloy composition". Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109 1-3 (2004): 245-248. http://www.scopus.com/inward/record.url?eid=2-s2.0-2342469998&partnerID=MN8TOARS.
    10.1016/j.mseb.2003.10.089
  35. Nunes De Carvalho, C.; Lavareda, G.; Fortunato, E.; Amaral, A.. "Properties of ITO films deposited by plasma enhanced RTE on unheated polymer sheets - Dependence on rf electrode distance from substrates". Journal of Non-Crystalline Solids 338-340 1 SPEC. IS (2004): 630-633. http://www.scopus.com/inward/record.url?eid=2-s2.0-2942594088&partnerID=MN8TOARS.
    10.1016/j.jnoncrysol.2004.03.057
  36. Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Amaral, A.. "Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates - Dependence on oxygen partial pressure". Thin Solid Films 427 1-2 (2003): 215-218. http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416718&partnerID=MN8TOARS.
    10.1016/S0040-6090(02)01213-0
  37. Lavareda, G.; Nunes de Carvalho, C.; Amaral, A.; Fortunato, E.; Ramos, A.R.; Da Silva, M.F.. "Dependence of TFT performance on the dielectric characteristics". Thin Solid Films 427 1-2 (2003): 71-76. http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416711&partnerID=MN8TOARS.
    10.1016/S0040-6090(02)01249-X
  38. Nunes de Carvalho, C.; Luis, A.; Conde, O.; Fortunato, E.; Lavareda, G.; Amaral, A.. "Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substrates". Journal of Non-Crystalline Solids 299-302 PART 2 (2002): 1208-1212. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036531408&partnerID=MN8TOARS.
    10.1016/S0022-3093(01)01140-1
  39. Amaral, A.; Lavareda, G.; Nunes De Carvalho, C.; Brogueira, P.; Gordo, P.M.; Subrahmanyam, V.S.; Lopes Gil, C.; Duarte Naia, M.; De Lima, A.P.. "Influence of the a-Si:H structural defects studied by positron annihilation on the solar cells characteristics". Thin Solid Films 403-404 (2002): 539-542. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036467989&partnerID=MN8TOARS.
    10.1016/S0040-6090(01)01666-2
  40. Nunes de Carvalho, C.; Luis, A.; Lavareda, G.; Fortunato, E.; Amaral, A.. "Effect of thickness on the properties of ITO thin films deposited by RF-PERTE on unheated, flexible, transparent substrates". Surface and Coatings Technology 151-152 (2002): 252-256. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036497146&partnerID=MN8TOARS.
    10.1016/S0257-8972(01)01641-3
  41. Almeida, P.L.; Lavareda, G.; Nunes de Carvalho, C.; Amaral, A.; Godinho, M.H.; Cidade, M.T.; Figueirinhas, J.L.. "Preliminary communication flexible cellulose derivative PDLC type cells". Liquid Crystals 29 3 (2002): 475-477. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036192874&partnerID=MN8TOARS.
    10.1080/02678290110113487
  42. Luis, A.; Nunes De Carvalho, C.; Lavareda, G.; Amaral, A.; Brogueira, P.; Godinho, M.H.. "ITO coated flexible transparent substrates for liquid crystal based devices". Vacuum 64 3-4 (2002): 475-479. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036134714&partnerID=MN8TOARS.
    10.1016/S0042-207X(01)00305-0
  43. Lavareda, G.; Nunes De Carvalho, C.; Amaral, A.; Conde, J.P.; Vieira, M.; Chu, V.. "Properties of high growth rate amorphous silicon deposited by MC-RF-PECVD". Vacuum 64 3-4 (2002): 245-248. http://www.scopus.com/inward/record.url?eid=2-s2.0-0036136414&partnerID=MN8TOARS.
    10.1016/S0042-207X(01)00293-7
  44. Nunes de Carvalho, C.; Luis, A.; Lavareda, G.; Amaral, A.; Brogueira, P.; Godinho, M.H.. "ITO thin films deposited by RTE on flexible transparent substrates". Optical Materials 17 1-2 (2001): 287-290. http://www.scopus.com/inward/record.url?eid=2-s2.0-0035361131&partnerID=MN8TOARS.
    Published • 10.1016/S0925-3467(01)00094-5
  45. Amaral, A.; Brogueira, P.; Nunes de Carvalho, C.; Lavareda, G.. "Influence of the initial layers on the optical and electrical properties of ITO films". Optical Materials 17 1-2 (2001): 291-294. http://www.scopus.com/inward/record.url?eid=2-s2.0-0035360485&partnerID=MN8TOARS.
    10.1016/S0925-3467(01)00051-9
  46. Nunes De Carvalho, C.; Botelho Do Rego, A.M.; Amaral, A.; Brogueira, P.; Lavareda, G.. "Effect of substrate temperature on the surface structure, composition and morphology of indium-tin oxide films". Surface and Coatings Technology 124 1 (2000): 70-75. http://www.scopus.com/inward/record.url?eid=2-s2.0-0033907512&partnerID=MN8TOARS.
    Published
  47. Amaral, A.; Brogueira, P.; Nunes De Carvalho, C.; Lavareda, G.. "Early stage growth structure of indium tin oxide thin films deposited by reactive thermal evaporation". Surface and Coatings Technology 125 1-3 (2000): 151-156. http://www.scopus.com/inward/record.url?eid=2-s2.0-0033882385&partnerID=MN8TOARS.
    Published
  48. Longeaud, C.; Kleider, J.P.; Mencaraglia, D.; Amaral, A.; Carvalho, C.N.. "Determination of the density of states in p-doped hydrogenated amorphous silicon by means of the modulated photocurrent experiment". Journal of Non-Crystalline Solids 164-166 PART 1 (1993): 423-426. http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906885&partnerID=MN8TOARS.
    10.1016/0022-3093(93)90580-Q
  49. Mencaraglia, D.; Amaral, A.; Kleider, J.P.. "Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics". Journal of Applied Physics 58 3 (1985): 1292-1301. http://www.scopus.com/inward/record.url?eid=2-s2.0-0000136444&partnerID=MN8TOARS.
    Published • 10.1063/1.336097
Activities

Oral presentation

Presentation title Event name
Host (Event location)
2012/06 Thermal dehydrogenation of amorphous silicon: Time dependency modeling NanoSEA 2012 - 4th International Conference on NANO-structures Self-Assembly.
(S. Margherita di Pula, Sardenha, Italy)
2012/05 Thermal dehydrogenation of amorphous silicon: effect of the substrate temperature during deposition. E-MRS 2012 - European Materials Research Society Conference
(Estrasburgo, France)
1999 Surface Properties of ITO Thin Films using Atomic Force Microscopy Image Processing. EPMESC VII, International Conference on Enhancement and Promotion of Computational Methods in Engineering and Science
(Macau, Macau SAR China)
1993 Determination of the Density of States in p-Doped a-Si:H by means of the Modulated Photocurrente Experiment 15th International Conference on Amorphous Semiconductors - Science and Technology (ICAS 15)
(Cambridge, United Kingdom)
1991 Influence of the RF Power Density on the Electrical Properties of Glow-Discharge Amorphous Silicon 10th E. C. Photovoltaic Solar Energy Conference
(Lisboa, Portugal)

Supervision

Thesis Title
Role 		Degree Subject (Type)
Institution / Organization
2018 - 2018 Pre-deposited heavily P-doped a-Si:H as Dopant Source in n + /p Junctions for Photovoltaic Applications
Supervisor of Rúben Gil Bernardo Pereira
 Engenharia Física Tecnológica (Master)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2014 - 2014 Célula fotovoltaicas de silício cristalino: homojunções obtidas pelo método de prédeposição de dopante a baixa temperatura e heterojunções HIT
Co-supervisor
 Engenharia de Materiais (Master)
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
2014 - 2014 Impact of emitter dopant gradient on amorphous/crystalline silicon HIT cell performance
Supervisor
 Engenharia e Gestão da Energia (Master)
Universidade de Lisboa Instituto Superior Técnico, Portugal
2012 - 2012 Crystalline Silicon Photovoltaic Solar Cells using Amorphous Silicon as Dopant Source
Supervisor
 Engenharia Física Tecnológica (Master)
Universidade de Lisboa Instituto Superior Técnico, Portugal

Jury of academic degree

Topic
Role 		Candidate name (Type of degree)
Institution / Organization
2014/05 Transístores de efeito de campo de silício cristalino obtidos pelo método de pré-deposição de dopante a baixa temperatura.
(Thesis) Arguer
 Lídia Sofia do Carmo Ricardo (Master)
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
2013/12/18 Fabrico e caracterização de W-OLEDs em substrato rígido e flexível.
(Thesis) Main arguer
 João Miguel Marreiro Costa (Master)
Universidade de Aveiro Departamento de Física, Portugal
2013/07/26 Desenvolvimento e caracterização de OLEDs para fins decorativos.
(Thesis) Main arguer
 João Gonçalo Côrte-Real Dinis (Master)
Universidade de Aveiro Departamento de Física, Portugal
2005/06 Transístores de películas finas de silício amorfo para aplicação em mostradores a cristal líquido de matriz activa.
(Thesis) Arguer
 Guilherme António Rodrigues Lavareda (PhD)
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal
1995 Películas Finas de Óxido de Índio e Estanho, deposição, caracterização e estudo do comportamento em dispositivos
(Thesis) Main arguer
 Carlos Alberto Nunes de Carvalho (PhD)
Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal