After getting bachelor and master’s degrees (2006, 2008) in applied physics and electronic engineering from Tohoku University (thesis title: Photo-response in inter-subband of epitaxial ZnO-based Quantum wells), Mohamed joined NEC Corporation (2008-2010) as a hardware engineer for 2.5 years; and participated in the development of multi-function printers. Following his success in getting an individual research fund from the “Japan Society for the Promotion of Science” (known as JSPS), he accomplished his Ph. D thesis (Oct. 2010 – Sept. 2014) in the university mentioned above investigating: “Multi-functionalities of wurtzite-MgZnO based MTJ devices for high magnetic storage density”. Then, he continued his academic research on the topic of: “Electric-field control of wurtzite-MgZnO based MTJ devices for low energy consumption” as a postdoctoral fellow in collaboration with Kanazawa University. During the period between April 2015 and November 2017, he joined the National Institute for Materials Sciences (NIMS) as an R&D scientist in the Japan governmental project for industry-oriented research called “ImPACT”; and working in the topic of “Developing novel materials as tunnel-barriers in perpendicular-MTJ devices for electrically controlled MRAMs for high magnetic storage density” in collaboration with many leading corporations and research centers in the magnetic storage technologies (Toshiba Memory, TDK, Samsung Electronics, and the National Institute of Advanced Industrial Science and Technology (AIST)). Now, he is focusing on the mass production and improvement of high-quality spintronics based magnetic field sensors for automobiles applications using the fascinating facilities of the International Iberian Nanotechnology Laboratory (INL). This activity is performed within the group of Prof. Paulo Freitas and in collaboration with industrial partners from Europe, the US, and Asia. Research & Development related Skills: (A) Long experience with clean-room and microfabrication technologies: Photo- and electro-beam lithography (up to 8-inch wafers), IBE and RIE, passivation, 3D fabrication of CPP devices for MRAM and magnetic sensors in the nanoscale. (~ 10 yrs.) (B) Strong background in thin film deposition and characterization techniques: PVD clusters tools (Sputter: SINGULUS, ULVAC, EIKO, MBE, and IBD), Characterizations: AFM, MFM, XRD, XRF, PL, FTIR, VSM, SQUID, PPMS, and low-temperature measurements. [11 journal papers] (C) Strong background in magnetic materials and spintronics devices: Epitaxial and polycrystalline Magnetic Tunnel Junctions (MTJ) design, fabrication and characterization (CPP devices & CIPT measurement) for (1) voltage-controlled MRAM utilizing novel spinel oxides and the promising interfacial phenomena: PMA and VCMA. And (2) Magnetic sensors for automobile applications (6 & 8-inch wafers) [8 journal papers & 2 patent] (PS: PMA and VCMA stand for perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy generated at the metal/oxide interfaces and enabling low energy consumption in MRAM.) (D) Strong background in semiconductors physics and related optoelectronic devices: Mainly ZnO and GaN semiconductors: deposition techniques, Quantum wells design, micro-fabrication (wet-etching) and optical characterization. [8 journal papers] (E) Electrical measurement setup skills: C++ language Programming, MS-office, LabVIEW and data analysis tools (as MATLAB, Igor, and Python). (F) Electronic circuits understanding, including design and HW boards evaluation [1 patent] (G) Good background in Ferroelectric materials and their tunnel junctions (FTJs) [3 journal paper]